ES52E9C1V-16.000M [ECLIPTEK]
TCVCXO, CLIPPED SINE OUTPUT, 16MHz, ROHS COMPLIANT, CERAMIC, SMD, 10 PIN;
| 型号： | ES52E9C1V-16.000M |
| 厂家： | 
Ecliptek |
| 描述： | TCVCXO, CLIPPED SINE OUTPUT, 16MHz, ROHS COMPLIANT, CERAMIC, SMD, 10 PIN 机械 输出元件 石英晶振 压控振荡器 有源晶体振荡电路 |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
Pb
ES52E9C1V-16.000M
ES52E9 C 1 V -16.000M
Series
Nominal Frequency
RoHS Compliant (Pb-free) 5mm x 7mm Ceramic SMD
3.3Vdc Clipped Sinewave Stratum 3 TC(VC)XO
16.000MHz
Control Voltage
1.5Vdc ±1.0Vdc
Operating Temperature Range
-20°C to +70°C
Frequency Stability
±0.28ppm Maximum
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Stability
Operating Temperature Range
Supply Voltage
16.000MHz
±0.28ppm Maximum (Measured at Vdd=3.3Vdc and Vc=1.5Vdc)
-20°C to +70°C
3.3Vdc ±5%
Total Holdover Stability
Input Current
±0.37ppm Maximum (Inclusive of Frequency Stability and 24 hours aging)
2.0mA Maximum
Output Voltage
0.8Vp-p Clipped Sinewave Minimum (External DC-Cut capacitor required, 150pF recommended)
Total Frequency Tolerance
±4.6ppm Maximum (Inclusive of Frequency Tolerance, Frequency Stability, Vdd (±1%), Load (±5%), solder
reflow, and 20 year aging)
Load Drive Capability
Output Logic Type
Control Voltage
Control Voltage Range
Frequency Deviation
Linearity
10kOhms // 10pF
Clipped Sinewave
1.5Vdc ±1.0Vdc
0.0Vdc to Vdd
±5ppm Minimum
5% Maximum
Transfer Function
Input Impedance
Phase Noise
Positive Transfer Characteristic
100kOhms Minimum
-80dBc/Hz at 10Hz Offset, -115dBc/Hz at 100Hz Offset, -135dBc/Hz at 1kHz Offset, and -145dBc/Hz at
>=10kHz Offset (Typical Values at 12.800MHz)
RMS Phase Jitter
1pSec Maximum (Fj = 12kHz to 20MHz)
10mSec Maximum
Start Up Time
Storage Temperature Range
-40°C to +125°C
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
Fine Leak Test
MIL-STD-883, Method 1014 Condition A
MIL-STD-883, Method 1014 Condition C
MIL-STD-202, Method 213 Condition C
MIL-STD-202, Method 210
Gross Leak Test
Mechanical Shock
Resistance to Soldering Heat
Resistance to Solvents
Solderability
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
Temperature Cycling
Vibration
MIL-STD-883, Method 1010
MIL-STD-883, Method 2007 Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/16/2010 | Page 1 of 5
ES52E9C1V-16.000M
MECHANICAL DIMENSIONS (all dimensions in millimeters)
PIN CONNECTION
1
2
3
4
5
6
7
8
9
10
Do Not Connect
Do Not Connect
Do Not Connect
Ground
2.00
MAX
1.00 ±0.10 (x5)
0.80 ±0.10 (x4)
5.00
±0.10
0.40
±0.10
5
6
4
Output
1.00
±0.10
(x4)
Do Not Connect
Do Not Connect
Do Not Connect
Supply Voltage
Voltage Control
3
2
7.00
±0.10
7
8
1
1.27
±0.10
(x4)
0.60
±0.10
(x6)
10
9
LINE MARKING
2.54
±0.10
(x2)
1
EXX.XXX
0.80
±0.10
E=Ecliptek Designator
XX.XXX=Nominal
Frequency in MHz
2
XXYZZ
XX=Ecliptek Manufacturing
Code
Y=Last Digit of the Year
ZZ=Week of the Year
Suggested Solder Pad Layout
All Dimensions in Millimeters
1.34
1.4(x4)
1.3
1.4
4.6
1.0
1.8
1.2(x4)
Solder Land (x5)
All Tolerances are ±0.1
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/16/2010 | Page 2 of 5
ES52E9C1V-16.000M
OUTPUT WAVEFORM
0VDC
VP-P
Test Circuit for Voltage Control Option
Switch
Frequency
Counter
Oscilloscope
Power
Supply
Probe
(Note 2)
Supply
Voltage
(VDD
)
Output
Current
Meter
1000pF
Tri-State
0.01µF
(Note 1)
0.1µF
(Note 1)
Power
Supply
Voltage
Meter
Ground
CL = 10pF
(Note 3)
RL = 10kOhms
Voltage
Control
Power
Supply
Voltage
Meter
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and VDD pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/16/2010 | Page 3 of 5
ES52E9C1V-16.000M
Recommended Solder Reflow Methods
Critical Zone
TL to TP
TP
Ramp-up
Ramp-down
TL
TS Max
TS Min
tL
tP
tSPreheat
t 25°C to Peak
Time (t)
High Temperature Infrared/Convection
TS MAX to TL (Ramp-up Rate)
3°C/second Maximum
Preheat
- Temperature Minimum (TS MIN)
- Temperature Typical (TS TYP)
- Temperature Maximum (TS MAX)
- Time (tS MIN)
150°C
175°C
200°C
60 - 180 Seconds
Ramp-up Rate (TL to TP)
3°C/second Maximum
Time Maintained Above:
- Temperature (TL)
- Time (tL)
217°C
60 - 150 Seconds
Peak Temperature (TP)
260°C Maximum for 10 Seconds Maximum
250°C +0/-5°C
Target Peak Temperature (TP Target)
Time within 5°C of actual peak (tp)
Ramp-down Rate
20 - 40 seconds
6°C/second Maximum
8 minutes Maximum
Level 1
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/16/2010 | Page 4 of 5
ES52E9C1V-16.000M
Recommended Solder Reflow Methods
Critical Zone
TL to TP
TP
Ramp-up
Ramp-down
TL
TS Max
TS Min
tL
tP
tSPreheat
t 25°C to Peak
Time (t)
Low Temperature Infrared/Convection 230°C
TS MAX to TL (Ramp-up Rate)
5°C/second Maximum
Preheat
- Temperature Minimum (TS MIN)
- Temperature Typical (TS TYP)
- Temperature Maximum (TS MAX)
- Time (tS MIN)
N/A
150°C
N/A
30 - 60 Seconds
Ramp-up Rate (TL to TP)
5°C/second Maximum
Time Maintained Above:
- Temperature (TL)
- Time (tL)
150°C
200 Seconds Maximum
Peak Temperature (TP)
230°C Maximum
230°C Maximum 2 Times
10 seconds Maximum 2 Times
5°C/second Maximum
N/A
Target Peak Temperature (TP Target)
Time within 5°C of actual peak (tp)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Level 1
Low Temperature Manual Soldering
185°C Maximum for 10 seconds Maximum, 2 times Maximum.
High Temperature Manual Soldering
260°C Maximum for 5 seconds Maximum, 2 times Maximum.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/16/2010 | Page 5 of 5
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