DL800 [EDI]

FAST RECOVERY HIGH VOLTAGE 25mA MINIATURE SILICON RECTIFIERS; 快恢复高压25毫安微型硅RECTIFIERS
DL800
型号: DL800
厂家: ELECTRONIC DEVICES INC.    ELECTRONIC DEVICES INC.
描述:

FAST RECOVERY HIGH VOLTAGE 25mA MINIATURE SILICON RECTIFIERS
快恢复高压25毫安微型硅RECTIFIERS

高压 快速恢复二极管
文件: 总2页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DL 300 DL1200  
FAST RECOVERY HIGH VOLTAGE 25mA  
MINIATURE SILICON RECTIFIERS  
SMALL SIZE MOLDED PACKAGE  
PRV 3,000 TO 12,000 VOLTS  
1.0 INCH MIN. LEADS  
LOW LEAKAGE  
EDI  
PRV  
Volts  
Type  
DL300  
DL500  
DL800  
DL1000  
DL1200  
3,000  
5,000  
8,000  
10,000  
12,000  
o
ELECTRICAL CHARACTERISTICS (at T =25 C Unless Otherwise Specified)  
A
o
C, I  
25 mA  
3 Amp  
Average Rectified Forward Current @ 50  
O
Max. Peak Surge Current, I  
(8.3ms)  
FSM  
150nanosec  
Max. Reverse Recovery T (Fig.4)  
rr  
26Volts  
Max.Forward Voltage Drop@25mA, V  
F
o
1
A
Max. DC Reverse Current @ PRV and 25 C, I  
R
o
A
Max. DC Reverse Current @ PRV and 100 C, I  
R
25  
o
o
-55 C to +125 C  
Ambient Operating Temperature Range, T  
A
o
o
Storage Temperature Range, T  
STG  
-55 C to +150 C  
NOTES:  
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and  
soldering point to prevent damage from excess heat.  
2.If operated over 10,000v/inch in length, devices should be immersed in oil or ree - ncapsulated.  
EDI reserves the right to change these specifications at any time without notice.  
DL  
DL1200  
300  
FIG.1  
FIG.2  
OUTPUT CURRENT vs AMBIENT TEMPERATURE  
NON- REPETITIVE SURGE CURRENT  
0.1SEC  
1.0SEC  
100  
100  
75  
75  
50  
50  
25  
25  
0
0
1
2
3
4
5
6
7 8 9 10  
20  
30 40 50 60  
0
25  
50  
75  
100  
125  
150  
O
C
CYCLES(60 Hz)  
AMBIENT TEMPERATURE  
FIG.3  
MECHANICAL  
LEAD-SOLDER DIPPED COPPER  
MARKING:CATHODE BAND  
AND DEVICE TYPE  
1.0Min Both Ends  
.021 Dia.  
.125 Dia.  
.400  
FIG.4  
REVERSE RECOVERY TEST METHOD  
RECOVERY WAVE FORM  
RECOVERY WA VE FORM  
1000  
T
rr  
N I  
D.U.T.  
0.1  
I
F=2MA  
50  
N I  
I
SCOPE  
RR=1MA  
PULSE  
I
R=5MA  
GENERATOR  
-
WAVE FORMS  
CIRCUIT  
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.  
21 GRAY OAKS AVENUE YONKERS. NEW YORK 10710 914-965-4400 FAX 914-965-5531 * 1-800-678-0828  
Ee-mail:sales@edidiodes.com  
*
*
*Wwebsite: http://www.edidiodes.com  

相关型号:

DL8032-001

Laser Diode Specifications
SANYO

DL82

CUB - 0.6 um CMOS
AMSCO

DL85B10

Zener Diode, 10V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF, 2 PIN
MCC

DL85B11

Zener Diode, 11V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF, 2 PIN
MCC

DL85B11-TP

Zener Diode, 11V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF-2
MCC

DL85B12

Zener Diode, 12V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF, 2 PIN
MCC

DL85B12-TP

Zener Diode, 12V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF-2
MCC

DL85B13

Zener Diode, 13V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF, 2 PIN
MCC

DL85B13-TP

Zener Diode, 13V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF-2
MCC

DL85B15

Zener Diode, 15V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF, 2 PIN
MCC

DL85B15-TP

Zener Diode, 15V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF-2
MCC

DL85B16

Zener Diode, 16V V(Z), 2%, 1.3W, Silicon, Unidirectional, MELF, 2 PIN
MCC