1N3657 [EIC]

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS; 玻璃钝化结硅整流
1N3657
型号: 1N3657
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
玻璃钝化结硅整流

文件: 总1页 (文件大小:77K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Certificate TH97/10561QM  
Certificate TW00/17276EM  
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N3611 - 1N3614  
1N3657  
M1A  
PRV : 200 - 1000 Volts  
Io : 1.0 Ampere  
FEATURES :  
1.00 (25.4)  
* Glass passivated chip  
* High forward surge current capability  
* High reliability  
0.085(2.16)  
MIN.  
0.075(1.91)  
0.138(3.51)  
0.122(3.10)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
0.024(0.60)  
MIN.  
0.022(0.55)  
MECHANICAL DATA :  
* Case : M1A Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.20 gram (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3657 UNIT  
VRWM  
Maximum Working Peak Reverse Voltage  
Minimum Breakdown Voltage @ 100 μA  
Maximum Average Forward Current at Ta = 100 °C  
at Ta = 150 °C  
200  
240  
400  
480  
600  
720  
800  
920  
1000  
1150  
V
V
VBR(MIN)  
1.0  
IF(AV)  
A
0.3  
30  
IFSM  
VF  
Peak Forward Surge Current (8.3 ms half-sine)  
Maximum Forward Voltage at IF = 1.0 A  
A
V
1.1  
at VRWM, Ta = 25 °C  
at VRWM, Ta = 150 °C  
IR  
Maximum Reverse Current  
1.0  
μA  
IR(H)  
300  
RӨJL  
TJ, TSTG  
Thermal Resistance , Junction to Lead (Note 1)  
38  
°C/W  
°C  
Operating Junction and Storage Temperature Range  
-65 to +175  
Note : (1) At 3/8"(10 mm) lead length form body.  
Page 1 of 1  
Rev. 03 : November 2, 2006  

相关型号:

1N3659

Silicon Power Rectifier
MICROSEMI

1N3659

Low-cost silicon rectifiers
NJSEMI

1N3659

Rectifier Diode, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-21
MOTOROLA

1N3659E3

Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN
MICROSEMI

1N3659R

Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN
MICROSEMI

1N3659R

Rectifier Diode, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-21
MOTOROLA

1N3659RE3

Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN
MICROSEMI

1N3660

Rectifier Diode, 1 Phase, 1 Element, 35A, 100V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN
MICROSEMI

1N3660

Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, DO-21
MOTOROLA

1N3660

Diode Switching 100V 35A 2-Pin DO-21
NJSEMI

1N3660E3

Rectifier Diode, 1 Phase, 1 Element, 35A, 100V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN
MICROSEMI

1N3660R

Rectifier Diode, 1 Phase, 1 Element, 35A, 100V V(RRM), Silicon, DO-208AA, DO-21, 1 PIN
MICROSEMI