1N3657 [EIC]
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS; 玻璃钝化结硅整流
| 型号： | 1N3657 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS |
| 文件： | 总1页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Certificate TH97/10561QM
Certificate TW00/17276EM
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
1N3611 - 1N3614
1N3657
M1A
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
1.00 (25.4)
* Glass passivated chip
* High forward surge current capability
* High reliability
0.085(2.16)
MIN.
0.075(1.91)
0.138(3.51)
0.122(3.10)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
1.00 (25.4)
0.024(0.60)
MIN.
0.022(0.55)
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.20 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3657 UNIT
VRWM
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100 μA
Maximum Average Forward Current at Ta = 100 °C
at Ta = 150 °C
200
240
400
480
600
720
800
920
1000
1150
V
V
VBR(MIN)
1.0
IF(AV)
A
0.3
30
IFSM
VF
Peak Forward Surge Current (8.3 ms half-sine)
Maximum Forward Voltage at IF = 1.0 A
A
V
1.1
at VRWM, Ta = 25 °C
at VRWM, Ta = 150 °C
IR
Maximum Reverse Current
1.0
μA
IR(H)
300
RӨJL
TJ, TSTG
Thermal Resistance , Junction to Lead (Note 1)
38
°C/W
°C
Operating Junction and Storage Temperature Range
-65 to +175
Note : (1) At 3/8"(10 mm) lead length form body.
Page 1 of 1
Rev. 03 : November 2, 2006
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