1SR35-200 [EIC]

SILICON RECTIFIER DIODES; 硅整流二极管
1SR35-200
型号: 1SR35-200
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:32K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON RECTIFIER DIODES  
DO - 41  
1SR35-100 ~ 1SR35-400  
PRV : 100 - 400 Volts  
Io : 1.0 Ampere  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
0.205 (5.2)  
0.166 (4.2)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.339 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1SR35-100  
1SR34-200  
200  
1SR34-400  
400  
UNIT  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
100  
70  
V
V
V
140  
280  
Maximum DC Blocking Voltage  
100  
200  
400  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 50 °C  
Maximum Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IF(AV)  
1.0  
30  
A
IFSM  
A
Maximum Forward Voltage at IF = 1.0 A  
Maximum DC Reverse Current at VR = VRRM  
Junction Temperature Range  
VF  
IRM  
1.1  
V
10  
mA  
°C  
°C  
TJ  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( 1SR35-100 ~ 1SR35-400 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
1.0  
50  
40  
30  
20  
10  
Ta = 25 °C  
0.8  
0.6  
0.4  
0.2  
0
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10 20  
40  
60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
10  
Ta = 100 °C  
1.0  
1.0  
Pulse Width = 300 ms  
2% Duty Cycle  
0.1  
0.1  
TJ = 25 °C  
Ta = 25 °C  
0.01  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
40  
60  
80  
100  
120  
140  
0
20  
FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
Page 2 of 2  
Rev. 02 : March 25, 2005  

相关型号:

1SR35-200A

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AFV

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHD

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHJ

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHL

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHM

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHN

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHP

暂无描述
ROHM

1SR35-200AHR

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AHT

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AT-20

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM

1SR35-200AT-20A

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
ROHM