ABR3502 [EIC]
AVALANCHE BRIDGE RECTIFIERS; 雪崩整流桥
| 型号： | ABR3502 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | AVALANCHE BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AVALANCHE BRIDGE
RECTIFIERS
ABR3500 - ABR3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
BR50
0.728(18.50)
0.688(17.40)
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
f
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ABR ABR ABR ABR ABR ABR ABR
3500 3501 3502 3504 3506 3508 3510
RATING
SYMBOL
UNIT
RRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
50
35
100
70
200
140
200
250
700
400
280
400
450
900
35
600
420
600
700
800
560
800
900
1000 Volts
700 Volts
RMS
V
Maximum DC Blocking Voltage
VDC
50
100
150
600
1000 Volts
1100 Volts
m
VBO(min.)
VBO(max.)
100
550
Minimum Avalanche Breakdown Voltage at 100 A
m
1150 1350 1550 Volts
Amps.
Maximum Avalanche Breakdown Voltage at 100 A
°
F(AV)
Maximum Average Forward Current Tc = 50 C
I
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
FSM
I
400
Amps.
A2S
I2t
660
Maximum Forward Voltage per Diode at IF = 17.5 Amps.
VF
1.1
10
Volts
°
IR
m
A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 C
°
R(H)
I
m
A
Ta = 100 C
200
q
°
C/W
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
1.5
R JC
J
°
T
- 40 to + 150
- 40 to + 150
C
°
TSTG
C
Notes :
1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate.
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( ABR3500 - ABR3510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
400
320
240
160
80
50
40
HEAT-SINK MOUNTING, Tc
7.5"x3.5"x4.6" THK
TJ = 55 °C
(19cm x 9cm x 11.8cm)
Al. Finned Plate
30
20
10
0
8ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 100 °C
1.0
10
1.0
Pulse Width = 300 ms
1 % Duty Cycle
0.1
TJ = 25 °C
TJ = 25 °C
0.1
0 . 0 1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
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