ABR806 [EIC]
AVALANCHE BRIDGE RECTIFIERS; 雪崩整流桥
| 型号： | ABR806 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | AVALANCHE BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AVALANCHE BRIDGE
RECTIFIERS
ABR800 - ABR810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
BR10
0.520 (13.20)
0.480 (12.20)
FEATURES :
0.158 (4.00)
AC
0.142 (3.60)
* High case dielectric strength
* High surge current capability
* High reliability
0.77 (19.56)
0.73 (18.54)
* Low reverse current
0.290 (7.36)
* Low forward voltage drop
* ldeal for printed circuit board
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
* Weight : 6.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ABR ABR ABR ABR ABR ABR ABR
RATING
SYMBOL
UNITS
800
801
802
804
806
808
800 1000 Volts
560 700 Volts
810
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
50
100
200
400
600
35
50
70
140
200
250
700
280
400
450
420
600
700
Maximum DC Blocking Voltage
VDC
100
150
600
800 1000 Volts
900 1100 Volts
Minimum Avalanche Breakdown Voltage at 100 mA
Maximum Avalanche Breakdown Voltage at 100 mA
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
VBO(min.)
VBO(max.)
IF(AV)
100
550
900 1150 1350 1550 Volts
8.0
Amp.
IFSM
I2t
300
160
1.0
Amps.
A2S
Volts
mA
Maximum Forward Voltage per Diode at IF = 4.0 Amps.
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance
Ta = 25 °C
IR
10
Ta = 100 °C
IR(H)
RqJC
TJ
10.0
2.5
mA
°C/W
°C
( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
- 50 to + 150
- 50 to + 150
TSTG
°C
Notes : 1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" ( 8.2 x 8.2 x 0.3 cm ) Al. plate. heatsink.
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( ABR800 - ABR810)
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
240
180
120
60
10
HEAT-SINK MOUNTED ON
3.2" x 3.2" x0.12"
8.0
(8.2x8.2x0.3 cm.) Al. PLATE
6.0
4.0
2.0
0
8.3 ms SINGLE SINE WAVE
JEDEC METHOD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
10
TJ = 100 °C
TJ = 25 °C
1.0
1.0
0.1
TJ = 25 °C
Pulse Width = 300 ms
1% Duty Cycle
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
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