B80-C1000 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | B80-C1000 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
WOB
B40-B380/C1000
PRV : 100 - 900 Volts
Io : 1.0 Amperes
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
AC
+
-
FEATURES :
1.00 (25.4)
MIN.
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
0.034 (0.86)
0.028 (0.71)
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
-
AC
+
0.22 (5.59)
0.18 (4.57)
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
AC
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
* Weight : 1.29 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
B40-
C1000
B80-
C1000
B125-
C1000
B250-
C1000
B380-
C1000
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
VRRM
100
200
300
600
900
Volts
Volts
Volts
RMS
V
40
80
125
300
250
600
380
900
VDC
100
200
Maximum Average Forward Current For
°
IF(AV)
1.2
1.0
Amps.
Free Air Operation at Tc = 45 C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
°
IFSM
I2t
40
10
Amps.
A2S
on rated load (JEDEC Method) at TJ = 125 C
°
Rating for fusing at TJ = 125 C ( t < 100 ms.)
RMS
±
t
W
Maximum Series Resistor C-Load V
=
10%
R
1.0
2.0
4.0
8.0
12.0
200
Maximum load Capacitance
+ 50%
-10%
L
C
5000
2500
1000
1.0
500
mF
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
VF
Volts
Maximum Reverse Current at Rated Repetitive
°
R
I
m
A
10
Peak Voltage per Diode
Ta = 25 C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
q
36
°
C/W
R JA
TJ
- 50 to + 125
- 50 to + 125
°
°
C
C
STG
T
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : AUGUST 26,1998
RATING AND CHARACTERISTIC CURVES ( B40-B380/C1000 )
FIG.1 - DERATING CURVE
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B40 C1000 - B125 C1000
FOR OUTPUT RECTIFIED CURRENT
B250 C1000 - B380 C1000
1.2
1.0
1.2
1.0
Resistive or
Resistive or
Inductive load.
Inductive load.
Capacitive Load
Capacitive
0-10mF
10-100mF
=100mF
0.8
0.6
0.4
0.8
0.6
0.4
0-10mF
10-100mF
=100mF
PC Board
0.375(9.5mm)
PC Board
0.375(9.5mm)
0.2
0
0.2
0
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0
20 40 60
80
100
120
140
20
40
60
80
100
120
140
°
°
CASE TEMPERATURE, ( C)
CASE TEMPERATURE, ( C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
°
C
TJ = 100
1.0
1
J
°
C
T = 25
0.1
J
°
C
T
= 25
m
s
Pulse Width = 300
1 % Duty Cycle
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
40
60
80
100
120
140
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FORWARD VOLTAGE, VOLTS
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
FIG.6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
40
100
60
40
°
TJ = 25
C
30
20
20
10
6
4
f = 1MHz
Vsig = 50mVp-p
10
0
2
1
1
2
4
6
10 20
40 60 100
0.1 0.2 0.6 1
2
4 6 10 20 40
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
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