BAT82 [EIC]

SCHOTTKY BARRIER DIODES; 肖特基势垒二极管
BAT82
型号: BAT82
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SCHOTTKY BARRIER DIODES
肖特基势垒二极管

二极管
文件: 总2页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SCHOTTKY BARRIER DIODES  
BAT81 - BAT83  
DO - 34 Glass  
FEATURES :  
• Low forward voltage  
• High breakdown voltage  
• Guard ring protected  
• Hermetically-sealed leaded glass package  
• Low diode capacitance.  
• Pb / RoHS Free  
1.00 (25.4)  
0.063 (1.6 )max.  
min.  
0.119 (3.04)  
Cathode  
max.  
MECHANICAL DATA :  
Case: DO-34 Glass Case  
Weight: approx. 0.11g  
Mark  
1.00 (25.4)  
0.022 (0.55)max.  
min.  
Dimensions in inches and ( millimeters )  
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Value  
Unit  
BAT81  
BAT82  
BAT83  
40  
50  
VR  
Continuous Reverse Voltage  
V
60  
30(1)  
IF  
Forward Continuous Current  
mA  
mA  
mA  
mW  
°C/W  
°C  
150(1)  
500(1)  
200(1)  
430(1)  
125  
IFRM  
IFSM  
PD  
Repetitive Peak Forward Current at tp £1s  
Non-repetitive Peak Forward Surge Current at tp £ 10ms  
Power Dissipation (Infinite Heatsink)  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Rq  
JA  
TJ  
TS  
Storage temperature range  
-65 to + 150  
°C  
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Test Condition  
Min  
Typ  
Max  
Unit  
Parameter  
Symbol  
IR  
VR = VRmax  
Reverse Current  
-
-
-
-
-
-
200  
0.41  
1.0  
nA  
IF = 1mA  
IF = 15mA  
VF  
Forward Voltage  
V
VR = 1V, f = 1MHz  
Diode Capacitance  
Cd  
-
-
1.6  
pF  
Page 1 of 2  
Rev. 02 : March 24, 2005  
RATING AND CHARACTERISTIC CURVES ( BAT81 - BAT83 )  
Typical forward characteristics  
Typical reverse characteristics  
1000  
100  
10  
104  
103  
Ta = 25°C  
Ta = 85°C  
102  
1
Ta = 25°C  
10  
1
0.1  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.1  
Forward Voltage , VF (V)  
0
10  
20  
30  
40  
50 60  
Reverse Voltage , VR (V)  
Typical diode capacitance as  
a function of reverse voltage  
2.0  
1.5  
1.0  
0.5  
0
0
10  
20  
30  
40  
50  
60  
Reverse Voltage , VR (V)  
Page 2 of 2  
Rev. 02 : March 24, 2005  

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