BY133 [EIC]
SILICON RECTIFIER DIODES; 硅整流二极管
| 型号： | BY133 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON RECTIFIER DIODES
DO - 41
1N4001 - 1N4007
BY133
PRV : 50 - 1300 Volts
Io : 1.0 Ampere
1.00 (25.4)
0.107 (2.7)
MIN.
0.080 (2.0)
FEATURES :
* High current capability
* High surge current capability
* High reliability
0.205 (5.2)
0.166 (4.2)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
1.00 (25.4)
0.034 (0.86)
MIN.
0.028 (0.71)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY133
UNIT
SYMBOL
VRRM
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000 1300
700 1000
1000 1300
V
V
V
VRMS
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IF(AV)
1.0
30
A
IFSM
A
Maximum Forward Voltage at IF = 1.0 Amp.
VF
IR
1.1
5.0
50
V
Maximum DC Reverse Current
Ta = 25 °C
mA
mA
IR(H)
at rated DC Blocking Voltage
Ta = 100 °C
Typical Reverse Revcovery Time
Trr
2.0
ms
(IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.)
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
CJ
15
26
pF
°C/W
°C
RqJA
TJ
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 05 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( 1N4001 - BY133 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1.0
50
40
30
20
10
Ta = 25 °C
0.8
0.6
0.4
0.2
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
10
Ta = 100 °C
1.0
1.0
Pulse Width = 300 ms
2% Duty Cycle
0.1
0.1
TJ = 25 °C
Ta = 25 °C
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
40
60
80
100
120 140
0
20
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 05 : March 25, 2005
相关型号：
BY133-AP
Rectifier Diode, 1 Element, 1A, 1300V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
BY133-LF
Rectifier Diode, 1 Element, 1A, 1300V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
DIOTEC
BY133-LF
Rectifier Diode, 1 Element, 1A, 1300V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明