CN25M [EIC]
CELL RECTIFIER DIODES; CELL整流二极管型号: | CN25M |
厂家: | EIC DISCRETE SEMICONDUCTORS |
描述: | CELL RECTIFIER DIODES |
文件: | 总2页 (文件大小:21K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CELL RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 25 Amperes
C25A
6.20
5.47
FEATURES :
* High current capability
* High surge current capability
* High reliability
0.51
ANODE
* Low reverse current
* Low forward voltage drop
* Chip form
1.45
CATHODE
0.38
Dimensions in millimeter
MECHANICAL DATA :
* Case : C25A
* Terminals : Solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Cathode to bigger size slug, For
Anode to bigger size slug use "R" suffix.
* Mounting position : Any
* Weight : 0.31 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL CN25A CN25B CN25D CN25G CN25J CN25K CN25M UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
25
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Amps
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Current Tc = 75°C
Peak Forward Surge Current Single half sine wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 25 Amps.
IF(AV)
IFSM
VF
400
Amps
Volts
mA
1.1
5.0
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
IR
Ta = 100 °C
IR(H)
CJ
1.0
mA
pF
Typical Junction Capacitance (Note 1)
Thermal Resistance, Junction to Case
Junction Temperature Range
300
10
°C/W
°C
RqJC
TJ
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Note : (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 VDC
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( CN25A - CN25M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
400
320
240
160
80
25
20
15
10
Ta = 25 °C
5
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
2000
1000
200
100
500
TJ = 25 °C
100
50
10
f = 1.0 MHz
Vsig = 50mVp-p
Pulse Width = 300 ms
2% Duty Cycle
1.0
10
1
2
4
10
20
40
100
TJ = 25 °C
REVERSE VOLTAGE, VOLTS
0.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
0.01
0.6 0.7
0.4 0.5
0.8 0.9 1.0 1.1 1.2 1.3 1.4
Ta = 100 °C
FORWARD VOLTAGE, VOLTS
1.0
0.1
Ta = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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