FR107G [EIC]
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS; 玻璃钝化结快速恢复
| 型号： | FR107G |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
FR101G - FR107G-STR
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
1.00 (25.4)
0.107 (2.7)
MIN.
* Glass passivated chip
* High current capability
* High reliability
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
1.00 (25.4)
0.034 (0.86)
MIN.
MECHANICAL DATA :
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FR
FR
FR
FR
FR
FR
FR
FR107G
-STR
SYMBOL
UNIT
RATING
101G 102G 103G 104G 105G 106G 107G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000 1000 Volts
560 700 700 Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
800 1000 1000 Volts
IF(AV)
1.0
Amps.
0.375"(9.5mm) Lead Length
Ta = 55 °C
Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
VF
35
1.3
5
Amps.
Volts
Maximum Peak Forward Voltage at IF = 1.0 Amp.
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
IR(H)
Trr
150
Ta = 125 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
150
250
15
500
250
ns
pf
CJ
TJ
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
F
R
( 1 ) Reverse Recovery Test Conditions : I = 0.5 A, I = 1.0 A, Irr = 0.25 A.
DC
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( FR101G - FR107G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50
10
W
W
+ 0.5 A
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1
W
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
30
1.0
0.8
8.3 ms SINGLE HALF SINE WAVE
Ta = 50
C
°
24
18
12
6
0.6
0.4
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
25 50 75 100 125
0
0
0
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
Pulse Width = 300
2% Duty Cycle
s
m
TJ = 100 C
°
TJ = 25
C
°
1.0
1.0
0.1
0.1
TJ = 25
C
°
0.01
0.01
0
20
40
60
80
100
120 140
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
PERCENT OF RATED REVERSE VOLTAGE, (%)
FORWARD VOLTAGE, VOLTS
相关型号：
FR107G-T3-LF
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
FR107G-TB-LF
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明