FR157G-STR
更新时间:2024-09-18 19:12:59
品牌:EIC
描述:Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-41,
FR157G-STR 概述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-41, 整流二极管
FR157G-STR 规格参数
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | O-PALF-W2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.38 | 其他特性: | HIGH RELIABILITY |
应用: | EFFICIENCY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.4 V |
JEDEC-95代码: | DO-41 | JESD-30 代码: | O-PALF-W2 |
最大非重复峰值正向电流: | 60 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
最大输出电流: | 1.5 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大重复峰值反向电压: | 1000 V | 最大反向电流: | 5 µA |
最大反向恢复时间: | 0.25 µs | 子类别: | Rectifier Diodes |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
FR157G-STR 数据手册
通过下载FR157G-STR数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
FR151G - FR157G-STR
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
1.00 (25.4)
0.107 (2.7)
MIN.
0.080 (2.0)
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MECHANICAL DATA :
0.034 (0.86)
MIN.
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
0.028 (0.71)
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FR157G
-STR
RATING
SYMBOL FR151G FR152G FR153G FR154G FR155G FR156G FR157G
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000 1000
700 700
1000 1000
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
IF(AV)
1.5
A
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 55 °C
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
VF
60
1.4
5.0
50
A
V
Maximum Peak Forward Voltage at IF = 1.5 A
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
ns
pf
IR(H)
Trr
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
150
250
500
250
CJ
TJ
25
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002
RATING AND CHARACTERISTIC CURVES ( FR151G - FR157G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
75
1.5
1.2
8.3 ms SINGLE HALF SINE WAVE
60
45
30
15
Ta = 50 °C
0.9
0.6
0.3
60Hz RESISTIVE OR INDUCTIVE LOAD
25 50 75 100 125
0
0
0
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
TJ = 100 °C
Pulse Width = 300 ms
2% Duty Cycle
TJ = 25 °C
1.0
1.0
0.1
0.1
TJ = 25 °C
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
40
60
80
100
120
140
20
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : April 2, 2002
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