FR501 [EIC]
FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管
| 型号： | FR501 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | FAST RECOVERY RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
FAST RECOVERY
RECTIFIER DIODES
FR501 - FR507
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
DO-201AD
FEATURES :
1.00 (25.4)
* High current capability
* High surge current capability
* High reliability
0.21 (5.33)
MIN.
0.19 (4.82)
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.375 (9.52)
0.285 (7.24)
1.00 (25.4)
0.052 (1.32)
0.048 (1.22)
MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
VRMS
FR501
50
FR502
100
70
FR503
200
FR504
400
FR505
600
FR506
800
FR507
1000
700
UNITS
Volts
Volts
Volts
Maximum RMS Voltage
35
140
280
420
560
Maximum DC Blocking Voltage
Maximum Average Forward Current
Half-Wave Resistive Load
VDC
50
100
200
400
600
800
1000
IF(AV)
5.0
Amps.
Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IFSM
VF
300
1.3
10
Amps.
Volts
mA
Maximum Peak Forward Voltage at IF = 5 Amps.
Maximum DC Reverse Current at VRRM
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
IR
Trr
150
250
500
ns
TJ
- 65 to + 150
- 65 to + 150
°C
Storage Temperature Range
TSTG
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
UPDATE : AUGUST 26, 1999
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( FR501 - FR507 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5 A
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25 A
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
300
240
5
8.3 ms SINGLE HALF SINE WAVE
4
3
2
1
180
120
60
0
60Hz RESISTIVE LOAD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
20
10
10
TJ = 100 °C
Pulse Width = 300 ms
1% Duty Cycle
TJ = 25 °C
1.0
1.0
0.1
0.1
TJ = 25 °C
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
40
60
80
100
120
140
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FORWARD VOLTAGE, VOLTS
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