GBU4D [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | GBU4D |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
GBU4A ~ GBU4M
PRV : 50 - 1000 Volts
Io : 4.0 Amperes
0.125(3.2)x45°
0.880 (22.3)
0.860 (21.8)
0.140 (3.56)
0.130 (3.30)
CHAMFER
0.160 (4.1)
0.140 (3.5)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
~
+
0.075 (1.9)
0.060 (1.5)
0.050 (1.27)
0.040 (1.02)
* Very good heat dissipation
* Pb / RoHS Free
0.210 (5.33)
0.190 (4.83)
0.022 (0.56)
0.018 (0.46)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Terminals : Plated lead solderable per
MIL-STD-705, Method 2026
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in inches and (millimeters)
* Weight : 4.0 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU GBU GBU GBU GBU GBU GBU
RATING
SYMBOL
UNIT
4A
4B
100 200 400 600 800 1000
70 140 280 420 560 700
4D
4G
4J
4K
4M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VR
50
V
V
V
A
35
50
Maximum DC Blocking Voltage
100 200 400 600 800 1000
4.0
IF(AV)
Maximum Average Forward Rectified Current Tc = 100°C
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Maximum Instantaneous Forward Voltage drop
per leg at IF = 4.0 A
IFSM
VF
80
A
V
1.0
IR
IR(H)
Cj
5.0
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Tj = 25 °C
mA
mA
500
Tj = 100 °C
Typical junction Capacitance per leg (Note 3)
101
46
pF
Typical Thermal Resistance, Junction to Case (Note 1)
Typical Thermal Resistance, Junction to Ambient (Note 2)
Operating Junction and Storage Temperature Range
2.5
22
°C/W
°C/W
°C
RqJC
RqJA
Tj , TSTG
- 55 to + 150
Notes : 1. Unit case mounted on 1.6"x1.6"x0.06" THK (4.0x4.0x0.15cm) Al. Plate.
2. Units mounted on P.C. Board with 0.5"x0.5" (12mmx15mm) copper pads and 0.375"(9.5mm) lead lengths.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( GBU4A THRU GBU4M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PER BRIDGE ELEMENT
5.0
4.0
150
TJ = 150 °C
120
Single Sine Wave
(JEDEC Method)
3.0
90
HEAT-SINK MOUNTING
1.6"X1.6"X0.06"
2.0
60
(4.0X4.0X0.15CM)Al. PLATE
1.0
30
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
PER BRIDGE ELEMENT
100
100
Ta = 125 °C
10
10
1.0
1.0
TJ = 25 °C
Ta = 25 °C
PULSE WIDTH = 300ms
0.1
0.1
2% Duty Cycle
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005
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