HER505 [EIC]
HIGH EFFICIENT RECTIFIER DIODES; 高产高效整流二极管
| 型号： | HER505 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | HIGH EFFICIENT RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH EFFICIENT
RECTIFIER DIODES
HER501 - HER508
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
DO-201AD
FEATURES :
1.00 (25.4)
* High current capability
* High surge current capability
* High reliability
0.21 (5.33)
MIN.
0.19 (4.82)
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.375 (9.52)
0.285 (7.24)
1.00 (25.4)
MIN.
MECHANICAL DATA :
0.052 (1.32)
0.048 (1.22)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER
501
HER
502
HER
503
HER
504
HER
505
HER
506
HER
507
HER
508
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
1000
IF(AV)
5.0
A
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
200
A
Maximum Forward Voltage at IF = 5.0 A
VF
IR
1.1
50
1.7
75
V
10
50
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
mA
mA
ns
pf
IR(H)
Trr
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
CJ
50
TJ
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002
RATING AND CHARACTERISTIC CURVES ( HER501 - HER508 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5 A
0
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25 A
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
160
120
5
4
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
3
2
1
80
40
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
Pulse Width = 300 ms
TJ = 100 °C
2% Duty Cycle
TJ = 25 °C
1.0
10
HER501-HER505
HER506-HER508
0.1
1.0
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : April 2, 2002
相关型号：
HER505-TB-LF
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
HER505-TP
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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