HER606 [EIC]
HIGH EFFICIENT; 高效
| 型号： | HER606 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | HIGH EFFICIENT |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH EFFICIENT
RECTIFIER DIODES
HER601 - HER608
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
D6
FEATURES :
* High surge current capability
* Low leakage current
* Forward voltage drop
* Low power loss
* High efficiency
* Pb / RoHS Free
1.00 (25.4)
0.360 (9.1)
MIN.
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MECHANICAL DATA :
0.052 (1.32)
MIN.
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
0.048 (1.22)
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
HER HER HER HER HER HER HER HER
SYMBOL
UNIT
RATING
601
602
100
70
603
200
140
200
604
300
210
300
605
400
280
400
606
600
420
600
607
800 1000
560 700
608
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
V
V
V
35
Maximum DC Blocking Voltage
Maximum Average Forward Current
50
100
800 1000
IF(AV)
6.0
A
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
200
A
Maximum Forward Voltage at IF = 6.0 A
VF
IR
1.1
50
1.7
75
V
10
50
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
μA
μA
ns
pf
IR(H)
Trr
CJ
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
50
TJ
- 65 to + 150
- 65 to + 150
°C
°C
TSTG
Storage Temperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : February 20, 2006
RATING AND CHARACTERISTIC CURVES ( HER601 - HER608 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 Ω
10 Ω
+ 0.5 A
0
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25 A
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 Ω
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
7.5
6.0
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
160
120
4.5
3.0
80
40
1.5
0
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
10
Pulse Width = 300 μs
2% Duty Cycle
TJ = 100 °C
TJ = 25 °C
1.0
HER601-HER605
HER606-HER608
0.1
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : February 20, 2006
相关型号：
HER606-G
Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, LEAD FREE, PLASTIC, R-6, 2 PIN
SENSITRON
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