HZS12A2L [EIC]
Zener Diode,;
| 型号： | HZS12A2L |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | Zener Diode, |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ZENER DIODES
HZS-L Series
DO - 34 Glass
PD : 400 mW
1.00 (25.4)
0.078 (2.0 )max.
min.
FEATURES :
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
0.118 (3.0)
max.
Cathode
Mark
1.00 (25.4)
min.
0.017 (0.43)max.
MECHANICAL DATA
Case: DO-34 Glass Case
Weight: approx. 0.093g
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at25 °C ambient temperature unless otherwise specified
Parameter
Symbol
Value
Unit
Forward Rectifier Current
IF
150
mA
PD
Power Dissipation
400
200
mW
°C
Junction Temperature
Storage Temperature Range
Tj
Tstg
- 55 to + 175
°C
Derating Curve
500
400
L = 5 mm
300
200
L = 10 mm
100
0
0
50
100
150
200
Ambient Temperture, Ta (°C)
Page 1 of 3
Rev. 04 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ELECTRICAL CHARACTERISTICS
Rating at25 °C ambient temperature unless otherwise specified
Test
Current
Maximum Dymamic
Resistance
Maximum
Reverse Current
Typical Temperature
Coefficient *
Zener Voltage
Type
Grade
IR
@
VR
Vz (V)
IZT
rd
@
IZ
IZ
γZ(mV/ °C)
min.
max.
(mA)
(Ω)
(mA)
(μA)
(V)
(mA)
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
5.2
5.3
5.5
5.6
150
80
5.4
5.7
5.5
5.8
HZS6L
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
2.0
2.0
0.5
5.6
5.9
5.7
6.0
5.8
6.1
60
6.0
6.3
6.1
6.4
6.3
6.6
6.4
6.7
6.6
6.9
6.7
7.0
HZS7L
60
60
80
80
3.5
3.0
0.5
0.5
2.0
0.5
6.9
7.2
7.0
7.3
7.2
7.6
7.3
7.7
7.5
7.9
7.7
8.1
7.9
8.3
8.1
8.5
8.3
8.7
HZS9L
6.0
7.0
8.5
8.9
8.7
9.1
8.9
9.3
9.1
9.5
9.3
9.7
9.5
9.9
9.7
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14.0
14.3
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
12.4
12.6
12.9
13.2
13.5
13.8
HZS11L
8.0
1.0
HZS12L
10.5
10.0
* Referent only
Page 2 of 3
Rev. 04 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ELECTRICAL CHARACTERISTICS
Rating at25 °C ambient temperature unless otherwise specified
Test
Zener Voltage
Maximum Dymamic
Resistance
Maximum
Reverse Current
Typical Temperature
Coefficient *
Current
Grade
Type
Vz (V) at IZT
IR
@
VR
IZT
rd
@
IZ
IZ
γZ(mV/ °C)
min.
max.
(mA)
(Ω)
(mA)
(μA)
(V)
(mA)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
14.1
14.5
14.9
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
25.2
26.2
27.2
28.2
29.2
30.2
31.2
32.2
33.2
34.2
35.3
36.4
14.7
15.1
15.5
15.9
16.5
17.1
17.7
18.3
19.0
19.7
20.4
21.1
21.9
22.6
23.3
24.0
24.7
25.5
26.6
27.6
28.6
29.6
30.6
31.6
32.6
33.6
34.6
35.7
36.8
38.0
HZS15L
HZS16L
HZS18L
HZS20L
HZS22L
HZS24L
HZS27L
HZS30L
HZS33L
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
80
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1
13.0
14.0
15.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
12.0
13.0
16.0
18.0
20.0
23.0
26.0
29.0
32.0
36.0
80
80
100
100
120
150
200
250
300
HZS36L
* Referent only
Note:
Type No. show as follows, HZS6A1L, HZS6A2L ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ HZS36-3L
Page 3 of 3
Rev. 04 : December 3, 2008
相关型号：
HZS12A2L-E
12.15 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34, MHD, 2 PIN
RENESAS
©2020 ICPDF网 联系我们和版权申明