KBP201 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | KBP201 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
KBP200 - KBP210
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
KBP
0.71 (18.0)
0.63 (16.0)
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
0.825 (20.95)
0.605 (15.36)
AC AC
0.035 (0.89)
0.028 (0.71)
0.500 (12.7)
MIN.
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
0.105 (2.66)
0.085 (2.16)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in inches and ( millimeter )
* Weight : 3.4 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBP
200
KBP
201
KBP
202
KBP
204
KBP
206
KBP
208
KBP
210
SYMBOL
UNIT
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
Volts
Volts
Maximum DC Blocking Voltage
100
1000
Volts
IF(AV)
Amps.
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
IFSM
60
Amps.
A2S
I2t
10
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
VF
1.0
Volts
IR
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
pF
IR(H)
1.0
24
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
CJ
RqJA
TJ
30
°C/W
°C
- 50 to + 125
- 50 to + 125
TSTG
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
UPDATE : MARCH 6, 2000
RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
80
70
60
50
2.0
1.5
1.0
60 Hz, Resistive or
inductive load.
TJ = 55 °C
40
30
20
0.5
0
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
10
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
10
Pulse Width = 300 ms
TJ = 100 °C
1 % Duty Cycle
1.0
1.0
0.1
TJ = 25 °C
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
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