MBR745 [EIC]
Rectifier Diode,;
| 型号： | MBR745 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Certificate TH97/10561QM
Certificate TW00/17276EM
SCHOTTKY BARRIER
RECTIFIER DIODES
MBR735 ~ MBR760
TO-220AC
PRV : 35~60 Volts
Io : 7.5 Amperes
0.154(3.91)DIA.
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.415(10.54)MAX.
0.055(1.39)
0.045(1.14)
0.113(2.87)
0.103(2.62)
FEATURES :
0.145(3.68)
0.135(3.43)
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
0.603(15.32)
0.573(14.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.39)
1
2
0.160(4.06)
0.140(3.56)
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* High temperature soldering : 250°C/10 seconds,
0.25" (6.35mm) from case
0.560(14.22)
0.530(13.46)
PIN 1
CASE
PIN 2
0.037(0.94)
0.027(0.68)
0.022(0.56)
0.014(0.36)
0.205(520)
0.195(4.95)
* Pb / RoHS Free
MECHANICAL DATA :
Dimensions in inches and ( millimeters )
* Case : JEDEC TO-220AC molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ( Tc = 25 °C unless otherwise noted)
RATINGS
SYMBOL MBR735 MBR745 MBR750 MBR760 UNIT
VRRM
VRWM
VDC
Maximum Reptitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
35
35
35
45
45
45
50
50
50
60
60
60
V
V
V
A
IF(AV)
Maximum Average Forward Rectified Current (See Fig. 1)
Peak Forward Surg Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage (Note 1)
at IF = 7.5 A, TC = 25 °C
7.5
IFSM
150
A
VF
-
0.75
0.65
0.5
V
at IF = 7.5 A, TC = 125 °C
0.57
0.1
15
Maximum Reverse Current at Rate
Peak Reverse Voltage
T C = 25 °C
C = 125 °C
IR
mA
T
IR(H)
RθJC
TJ
50
Typical Thermal Resistance
3.0
°C/W
°C
Operating Junction Temperature Range
Storage Temperature Range
-65 to + 150
-65 to + 175
TSTG
°C
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
Rev. 01 : February 22, 2006
Page 1 of 2
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( MBR735 ~ MBR760 )
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
7.5
150
120
90
6.0
MBR735 & MBR745
MBR750 & MBR760
4.5
3.0
1.5
0
60
TJ =TJmax
8.3 ms single half sine-wave
(JEDEC Method)
30
0
Resistive or Inductive Load
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, (°C)
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 125 °C
Pluse Width = 300 µs
1% Duty Cycle
1.0
10
TJ = 25 °C
MBR735 & MBR745
MBR750 & MBR760
0.1
1.0
MBR735 & MBR745
MBR750 & MBR760
0.01
0.1
TJ = 25 °C
0.01
0.001
0
20
40
60
80
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD
VOLTAGE, (V)
Rev. 01 : February 22, 2006
Page 1 of 2
相关型号：
MBR745-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 45V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
MBR745-HE3/45
DIODE 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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