RBV1001D [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | RBV1001D |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
RBV1000D - RBV1010D
RBV25
PRV : 50 - 1000 Volts
Io : 10 Amperes
3.9 0.2
±
C3
30 0.3
±
4.9 0.2
±
3.2 0.1
Æ
±
FEATURES :
* High current capability
* High surge current capability
* High reliability
+
* Low reverse current
~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
1.0
0.1
±
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
10
7.5 7.5
2.0 0.2
±
0.2 0.2 0.2
±
±
±
0.7 0.1
±
Dimensions in millimeters
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
RBV
RBV
RBV
RBV
RBV
RBV
SYMBOL
UNIT
RATING
1000D 1001D 1002D 1004D 1006D 1008D 1010D
50
35
50
100
70
200
140
200
400
280
400
10
600
420
600
800
560
800
1000
700
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
Volts
Volts
Maximum RMS Voltage
100
1000
Maximum DC Blocking Voltage
Volts
Maximum Average Forward Current Tc = 55 C
IF(AV)
Amps.
°
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
300
166
1.0
10
IFSM
I2t
Amps.
A2S
Maximum Forward Voltage per Diode at IF = 10 Amps.
VF
Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
IR
A
m
°
200
2.2
Ta = 100 C
IR(H)
A
m
°
R JC
q
C/W
°
- 40 to + 150
- 40 to + 150
Operating Junction Temperature Range
Storage Temperature Range
TJ
C
C
°
°
TSTG
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998
RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
300
12
10
8
250
200
150
100
50
TJ = 50 C
°
6
4
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
2
(8.2cm x 8.2cm x 0.3cm)
Al.-FINNED PLATE
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
100
TJ = 100
C
°
1.0
0.1
10
Pulse Width = 300
1 % Duty Cycle
s
m
1.0
TJ = 25
C
°
TJ = 25
C
°
0.1
0.01
0
40
60
80
100
120
140
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.8
1.0
1.2
1.4
1.6
0.6
1.8
FORWARD VOLTAGE, VOLTS
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