RBV800 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | RBV800 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
RBV800 - RBV810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
Æ3.2 ± 0.1
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
+
~ ~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
10
7.5 7.5
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
800
RBV
801
RBV
802
RBV
804
RBV
806
RBV
808
RBV
810
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
50
35
50
100
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
Volts
Volts
RMS
V
70
700
Maximum DC Blocking Voltage
VDC
100
1000
Volts
°
F(AV)
Maximum Average Forward Current Tc = 55 C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I
Amps.
FSM
300
160
I
Amps.
A2S
I2t
F
V
1.0
Maximum Forward Voltage per Diode at IF = 4.0 Amps.
Volts
°
m
IR
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
A
°
R(H)
200
m
A
Ta = 100 C
I
°
q
2.5
R JC
C/W
J
- 40 to + 150
- 40 to + 150
°
C
Operating Junction Temperature Range
Storage Temperature Range
T
°
C
TSTG
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
UPDATE : AUGUST 3, 1998
RATING AND CHARACTERISTIC CURVES ( RBV800 - RBV810 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
300
9.0
HEAT-SINK MOUNTING,
7.5
250
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm)
Tc = 50°C
Al.-PLATE
TJ = 50 °C
6.0
200
150
100
50
4.5
3.0
1.5
0
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
0
25
50
75
100
125
150
175
1
4
6
10
20
40
60 100
2
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
1.0
10
Pulse Width = 300 ms
1 % Duty Cycle
0.1
1.0
TJ = 25 °
TJ = 25 °C
0.1
0.01
0
40
60
80
100
120
140
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.4
FORWARD VOLTAGE, VOLTS
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