RD15ESAB2 [EIC]
Zener Diode,;型号: | RD15ESAB2 |
厂家: | EIC DISCRETE SEMICONDUCTORS |
描述: | Zener Diode, 测试 二极管 |
文件: | 总4页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ZENER DIODES
RD2.0ES SERIES
DO - 34 Glass
VZ : 2.0 - 37.5Volts
PD : 400 mW
1.00 (25.4)
0.078 (2.0 )max.
min.
FEATURES :
* High reliability
0.118 (3.0)
max.
Cathode
Mark
* Low leakage current
* Suitable for 5mm - pitch high speed automatical
insertion
1.00 (25.4)
min.
0.017 (0.43)max.
* Pb / RoHS Free
MECHANICAL DATA
Case: DO-34 Glass Case
Weight: approx. 0.093g
Dimensions in inches and ( millimeters )
ORDERING INFORMATION
RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3"
should be applied for oders for suffix "AB"
MAXIMUM RATINGS
Rating at25 °C ambient temperature unless otherwise specified
Parameter
Forward Rectifier Current
Power Dissipation
Symbol
Value
150
Unit
mA
mW
W
IF
PD
PRSM
Tj
400
100
Surge Reverse Power(t = 10μs)
Junction Temperature
175
°C
Storage Temperature Range
Tstg
- 65 to + 175
°C
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160 180 200
Ta, AMBIENT TEMPERATURE (°C)
Page 1 of 4
Rev. 03 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ELECTRICAL CHARACTERISTICS
Rating at25 °C ambient temperature unless otherwise specified
(2)
Test
Current
IZT
Maximum
Reverse Current
Maximum Zener
(1)
Zener Voltage
Impedance
ZZK @ IZK
(Ω)
Type
Suffix
Vz (V) at IZT
ZZT @ IZT
IZK
IR
at VR
(V)
min.
max.
(mA)
(Ω)
(mA)
(μA)
AB
AB1
AB2
AB
1.88
1.88
2.02
2.12
2.12
2.22
2.33
2.33
2.43
2.54
2.54
2.69
2.85
2.85
3.01
3.16
3.16
3.32
3.47
3.47
3.62
3.77
3.77
3.92
4.05
4.05
4.20
4.34
4.47
4.47
4.59
4.71
4.85
4.85
4.97
5.12
5.29
5.29
5.46
5.64
5.81
5.81
5.99
6.16
6.32
6.32
6.52
6.70
2.20
2.10
2.20
2.41
2.30
2.41
2.63
2.52
2.63
2.91
2.75
2.91
3.22
3.07
3.22
3.53
3.38
3.53
3.83
3.68
3.83
4.14
3.98
4.14
4.53
4.26
4.40
4.53
4.91
4.65
4.77
4.91
5.35
5.03
5.18
5.35
5.88
5.52
5.70
5.88
6.40
6.06
6.24
6.40
6.97
6.59
6.79
6.97
RD2.0ES
RD2.2ES
RD2.4ES
RD2.7ES
RD3.0ES
RD3.3ES
RD3.6ES
RD3.9ES
5
100
100
100
110
120
120
120
120
1000
1000
1000
1000
1000
1000
1100
1200
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
120
120
120
100
50
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
5
5
5
5
5
5
5
AB1
AB2
AB
AB1
AB2
AB
AB1
AB2
AB
AB1
AB2
AB
20
AB1
AB2
AB
10
AB1
AB2
AB
5
AB1
AB2
AB
AB1
AB2
AB3
AB
RD4.3ES
RD4.7ES
RD5.1ES
RD5.6ES
RD6.2ES
RD6.8ES
5
5
5
5
5
5
120
100
70
1200
1200
1200
900
0.5
0.5
0.5
0.5
0.5
0.5
5
5
5
5
5
2
1.0
1.0
1.5
2.5
3.0
3.5
AB1
AB2
AB3
AB
AB1
AB2
AB3
AB
AB1
AB2
AB3
AB
40
AB1
AB2
AB3
AB
30
500
AB1
AB2
AB3
25
150
Page 2 of 4
Rev. 03 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ELECTRICAL CHARACTERISTICS
Rating at25 °C ambient temperature unless otherwise specified
(2)
Test
Current
IZT
Maximum
Reverse Current
Maximum Zener
(1)
Zener Voltage
Impedance
ZZK @ IZK
(Ω)
Type
Suffix
Vz (V) at IZT
ZZT @ IZT
IZK
IR
at VR
(V)
min.
max.
(mA)
(Ω)
(mA)
(μA)
AB
AB1
AB2
AB3
AB
6.88
6.88
7.64
7.19
RD7.5ES
RD8.2ES
RD9.1ES
RD10ES
RD11ES
RD12ES
RD13ES
RD15ES
RD16ES
RD18ES
RD20ES
5
25
20
20
20
20
25
25
25
25
30
30
120
120
120
120
120
110
110
110
150
150
200
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.0
5.0
6.0
7.0
8.0
9.0
10
7.11
7.41
7.33
7.64
7.56
8.41
AB1
AB2
AB3
AB
7.56
7.90
5
5
5
5
5
5
5
5
5
5
7.82
8.15
8.07
8.41
8.33
9.29
AB1
AB2
AB3
AB
8.33
8.70
8.61
8.99
8.89
9.29
9.19
10.30
9.59
AB1
AB2
AB3
AB
9.19
9.48
9.90
9.82
10.30
11.26
10.63
10.95
11.26
12.30
11.63
11.92
12.30
13.62
12.71
13.16
13.62
15.02
14.09
14.56
15.02
16.50
15.50
15.96
16.50
18.30
17.06
17.67
18.30
20.45
18.96
19.68
20.45
10.18
10.18
10.50
10.82
11.13
11.13
11.50
11.80
12.18
12.18
12.59
13.03
13.48
13.48
13.95
14.42
14.87
14.87
15.33
15.79
16.34
16.34
16.90
17.51
18.14
18.14
18.80
19.52
AB1
AB2
AB3
AB
AB1
AB2
AB3
AB
AB1
AB2
AB3
AB
AB1
AB2
AB3
AB
11
AB1
AB2
AB3
AB
12
AB1
AB2
AB3
AB
13
AB1
AB2
AB3
15
Page 3 of 4
Rev. 03 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ELECTRICAL CHARACTERISTICS
Rating at25 °C ambient temperature unless otherwise specified
(2)
Test
Current
IZT
Maximum
Reverse Current
Maximum Zener
(1)
Zener Voltage
Impedance
ZZK @ IZK
(Ω)
Type
Suffix
Vz (V) at IZT
ZZT @ IZT
IZK
IR
at VR
(V)
min.
max.
(mA)
(Ω)
(mA)
(μA)
AB
20.23
20.23
20.76
21.22
21.68
22.26
22.26
22.75
23.29
23.81
24.26
24.26
24.97
25.63
26.29
26.99
26.99
27.70
28.36
29.02
29.68
29.68
30.32
30.90
31.49
32.14
32.14
32.79
33.40
34.01
34.68
34.68
35.36
36.00
36.63
22.61
21.08
21.65
22.09
22.61
24.81
23.12
23.73
24.27
24.81
27.64
25.52
26.26
26.95
27.64
30.51
28.39
29.13
29.82
30.51
33.11
31.22
31.88
32.50
33.11
35.77
33.79
34.49
35.13
35.77
38.52
36.47
37.19
37.85
38.52
AB1
AB2
AB3
AB4
AB
RD22ES
5
30
30
45
55
65
75
85
200
200
250
250
250
250
250
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
17
19
21
23
25
27
30
AB1
AB2
AB3
AB4
AB
RD24ES
RD27ES
RD30ES
RD33ES
RD36ES
RD39ES
5
5
5
5
5
5
AB1
AB2
AB3
AB4
AB
AB1
AB2
AB3
AB4
AB
AB1
AB2
AB3
AB4
AB
AB1
AB2
AB3
AB4
AB
AB1
AB2
AB3
AB4
Notes :
(1) Tested with pulse (40 ms )
(2) ZZ and ZZK are measured at ZI by given a very small A.C. current signal.
(3) Suffix AB is Suffix AB1, AB2, AB3, or AB4
Page 4 of 4
Rev. 03 : December 3, 2008
相关型号:
RD15ESAB3
14.72V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34, GLASS PACKAGE-2
RENESAS
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