RM11A_05 [EIC]

SILICON RECTIFIER DIODES; 硅整流二极管
RM11A_05
型号: RM11A_05
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SURFACE MOUNT  
SM4001 - SM4007  
GLASS PASSIVATED JUNCTION  
PRV : 50 - 1000 Volts  
Io : 1.0 Ampere  
MELF  
Cathode Mark  
φ 0.102 (2.6)  
0.094 (2.4)  
FEATURES :  
* Glass Passivated Junction  
* Hight Current Capability  
* Low Forward voltage Drop  
* Hight Reliability and Low Leakage  
* For Surface Mount Application  
* Plastic Material - UL Flammability  
Classification Rating 94 V-0  
* Pb / RoHS Free  
0.022(0.55)  
0.205(5.2)  
0.189(4.8)  
Dimensions in inches and ( millimeters )  
Mechanical Data  
* Case : MELF, Plastic  
* Terminals : Solderable per MIL-STD-202, Method 208  
* Polarity : Color band  
* Approx Weight : 0.25 grams  
* Mounting Position : Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Single phase, half wave, 60 Hz, resistive or inductive load  
For capacitive load, derate current by 20%  
RATING  
SM4001 SM4002 SM4003 SM4004 SM4005 SM4006 SM4007  
SYMBOL  
VRRM  
VRMS  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Reverse Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
VR  
Maximum DC Blocking Voltage  
100  
1000  
IF(AV)  
Maximum Average Forward Rectified Current  
Peak Forward Surge Current 8.3ms single  
half sine wave Superimposed on rated load  
(JEDEC Method )  
IFSM  
30  
A
1.1  
VF  
IR  
Maximum Forward Voltage at IF = 1.0 A.  
V
5.0  
50  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
μA  
μA  
Ta = 125 °C  
Typical Thermal Resistance, Junction to Ambient  
Typical Junction Capacitance (Note1)  
RθJA  
CJ  
50  
15  
°C/W  
pF  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Note :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( SM4001 - SM4007 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
1.0  
50  
40  
30  
20  
10  
0
8.3ms Single Half Sine-Wave  
(JEDED) Method  
0.8  
0.6  
0.4  
0.2  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10 20  
40  
60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
10  
TJ = 100 °C  
1.0  
0.1  
1.0  
Pulse Width = 300 μs  
1% Duty Cycle  
TJ = 25 °C  
0.1  
TJ = 25 °C  
0.01  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
40  
60  
80  
100  
120  
140  
0
20  
FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
Page 2 of 2  
Rev. 02 : March 25, 2005  

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