RM2B [EIC]

SILICON RECTIFIER DIODES; 硅整流二极管
RM2B
型号: RM2B
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON RECTIFIER DIODES  
RM2 - RM2Z  
D2A  
PRV : 200 - 1000 Volts  
Io : 1.2 Amperes  
FEATURES :  
1.00 (25.4)  
* High current capability  
* High surge current capability  
* High reliability  
0.161 (4.1)  
MIN.  
0.154 (3.9)  
* Low reverse current  
* Low forward voltage drop  
0.284 (7.2)  
0.268 (6.8)  
1.00 (25.4)  
0.040 (1.02)  
MIN.  
0.0385 (0.98)  
MECHANICAL DATA :  
* Case : D2A Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.645 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherw ise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL RM2Z  
RM2  
RM2A  
RM2B  
RM2C  
UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
1000  
0.375"(9.5mm) Lead Length Ta = 70 C  
IF  
1.2  
Amps.  
°
Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
100  
Amps.  
Volts  
Maximum Forward Voltage at IF = 1.5 Amps.  
0.91  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 C  
IR  
10  
A
m
°
Ta = 100 C  
IR(H)  
CJ  
50  
30  
A
m
°
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
R JA  
q
50  
C/W  
°
T
J
- 65 to + 175  
- 65 to + 175  
C
°
Storage Temperature Range  
TSTG  
C
°
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : MAY 27, 1998  
RATING AND CHARACTERISTIC CURVES ( RM2 - RM2Z )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
100  
80  
60  
40  
20  
1.5  
1.2  
8.3 ms SINGLE HALF SINE WAVE  
0.9  
0.6  
0.3  
60 Hz RESISTIVE OR INDUCTIVE LOAD  
0
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( C)  
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
100  
TJ = 100  
C
°
1.0  
0.1  
10  
1.0  
TJ = 25  
C
°
Pulse Width = 300  
2% Duty Cycle  
s
m
0.01  
0
20  
40  
60  
80  
100  
120  
140  
0.1  
TJ = 25  
C
°
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
0.01  
0.4  
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
FORWARD VOLTAGE, VOLTS  

相关型号:

RM2BV3

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN

RM2BV4

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN

RM2BW

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN

RM2BWK

暂无描述
SANKEN

RM2BWS

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN

RM2BZ

PLASTIC SILICON RECTIFIER
BL Galaxy Ele

RM2C

SILICON RECTIFIER DIODES
EIC

RM2C

PLASTIC SILICON RECTIFIER
BL Galaxy Ele

RM2C

Rectifier Diodes
SANKEN

RM2CV1

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN

RM2CV3

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN

RM2CVO

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
SANKEN