S1J [EIC]
SURFACE MOUNT RECTIFIERS; 表面贴装整流器
| 型号： | S1J |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SURFACE MOUNT RECTIFIERS |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Certificate TH97/10561QM
Certificate TW00/17276EM
SURFACE MOUNT RECTIFIERS
S1A ~ S1M
SMA
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
1.3 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
1.8 ± 0.2
2.3 ± 0.2
2.7 ± 0.2
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
1.8 ± 0.2
Dimensions in millimeters
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
IF
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800 1000
560 700
V
V
V
A
Maximum DC Blocking Voltage
100
800 1000
Maximum Average Forward Current (See fig. 1)
Peak Forward Surge Current
IFSM
40
30
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method) TL = 110 °C
Maximum Instantaneous Forward Voltage at IF = 1.0 A.
VF
IR
1.1
V
μA
1.0
5.0
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25 °C
IR(H)
Trr
50
Ta = 125 °C
μA
Typical Reverse Recovery Time (Note 1)
1.8
μs
75
27
85
30
°C/W
°C/W
pF
RθJA
RθJL
CJ
Typical thermal resistance (Note 2)
Typical Junction Capacitance at 4.0V, 1 MHz
Junction Temperature Range
12
TJ
- 55 to + 150
- 55 to + 150
°C
Storage Temperature Range
TSTG
°C
Notes :
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Page 1 of 2
Rev. 04 : October 26, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( S1A - S1M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
40
30
20
1.0
0.8
S1A - S1J
S1K - S1M
TL = 110°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.6
0.4
S1A - S1J
S1K - S1M
0.2
0
10
0
0.2 x 0.2" (5.0 x 5.0mm)
Thick Copper Pad Areas
0
25
50
75
100
125
150
175
1
2
4
6
10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
10
Ta = 125 °C
1.0
0.1
1.0
0.1
Pulse Width = 300 μs
2% Duty Cycle
TJ = 25 °C
Ta = 25 °C
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
40
60
80
100
120
0
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
100
10
1
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
0.01
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Page 2 of 2
Rev. 04 : October 26, 2006
相关型号：
S1J-7-F
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
DIODES
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