SD101C [EIC]
SCHOTTKY BARRIER DIODES; 肖特基势垒二极管
| 型号： | SD101C |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SCHOTTKY BARRIER DIODES |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCHOTTKY BARRIER DIODES
SD101A - SD101C
DO - 35 Glass
(DO-204AH)
FEATURES :
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• These diodes are also available in the MiniMELF case
with type designations LL101A thru LL101C.
• Pb / RoHS Free
1.00 (25.4)
0.079(2.0 )max.
min.
0.150 (3.8)
Cathode
max.
Mark
1.00 (25.4)
0.020 (0.52)max.
min.
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
SD101A
SD101B
SD101C
60
50
VRRM
Repetitive Peak Reverse Voltage
V
40
2
IFSM
PD
Maximum Single Cycle Surge 10ms Square Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
A
mW
°C/mW
°C
400(1)
0.3(1)
Rq
JA
125(1)
TJ
TS
-55 to + 150 (1)
Storage temperature range
°C
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Test Condition
Min
Typ
Max
Unit
Parameter
Symbol
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
60
50
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V(BR)R
IR = 10 mA
Reverse Breakdown Voltage
V
VR = 50 V
VR = 40 V
VR = 30 V
200
200
200
0.41
0.4
0.39
1.0
0.95
0.9
IR
Reverse Current
nA
IF = 1mA
VF
Forward Voltage Drop
V
IF = 15mA
-
-
IF = IR = 5mA ,
recover to 0.1IR
Reverse Recovery Time
Trr
-
-
1
ns
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( SD101A - SD101C )
Typical variation of forward current
and forward voltage for primary conduction
through the schottky barrier
Typical forward conduction curve
of combination Schottky barrier
and PN junction guard ring
10
100
80
SD101C
SD101A
SD101B
5
SD101A
SD101B
2
SD101C
1
60
40
20
0.5
0.2
0.1
0.05
0.02
0.01
0
0
0.5
Forward Voltage , VF (V)
1
0
0.5
1
Forward Voltage , VF (V)
Typical capacitance curve as a
function of reverse Voltage
Typical variation of reverse current
at various temperatures
100
50
2
1
0
Tj = 25°C
20
10
5
Ta = 125°C
2
SD101B
SD101C
1
0.5
SD101A
0.2
Ta = 25°C
0.1
0.05
0.02
0.01
0
10
20
30
40
50
0
10
20
30
40
50
Reverse Voltage , VR (V)
Reverse Voltage , VR (V)
Page 2 of 2
Rev. 02 : March 24, 2005
相关型号：
SD101C-AP
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
SD101C/D7
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
VISHAY
SD101C/D8
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明