SD103C [EIC]
SCHOTTKY BARRIER DIODES; 肖特基势垒二极管
| 型号： | SD103C |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SCHOTTKY BARRIER DIODES |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCHOTTKY BARRIER DIODES
SD103A - SD103C
DO - 35 Glass
(DO-204AH)
FEATURES :
• For general purpose applications
• The SD103 series is a Metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
1.00 (25.4)
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
0.079(2.0 )max.
min.
0.150 (3.8)
Cathode
max.
Mark
1.00 (25.4)
0.020 (0.52)max.
min.
• These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
SD103A
SD103B
SD103C
40
30
VRRM
Repetitive Peak Reverse Voltage
V
20
IFSM
PD
Single Cycle Surge 60 Hz Sine Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
15
A
mW
°C/mW
°C
400(1)
0.3(1)
125(1)
-55 to + 150 (1)
Rq
JA
TJ
TS
Storage temperature range
°C
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Test Condition
Min
Typ
Max
5
Unit
Parameter
Symbol
VR = 30 V
SD103A
SD103B
SD103C
-
-
-
-
-
-
-
-
IR
VR = 20 V
Reverse Current
mA
5
VR = 10 V
-
5
IF = 20mA
-
0.37
0.6
-
VF
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
V
IF = 200mA
-
VR = 0 V, f = 1MHz
IF = IR = 50mA to 200mA
recover to 0.1IR
Ctot
Trr
50
pF
ns
-
10
-
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( SD103A - SD103C )
Typical variation of forward current
and forward voltage for primary conduction
through the schottky barrier
Typical high current forward
conduction curve
tp = 300ms , duty cycle = 2%
103
5
4
3
2
1
102
10
1
10-1
10-2
0
0.5
Forward Voltage , VF (V)
0
0.5
1
0
1
1.5
Forward Voltage , VF (V)
Blocking voltage deration
versus temperature at various
average forward currents
Typical variation of reverse current
at various temperatures
50
103
Ta =125°C
40
102
100 mA
30
20
10
200 mA
IF=400 mA
10
1
25°C
10-1
0
0
10
20
30
40
50
0
100
200
Reverse Voltage , VR (V)
Ambient Temperature, Ta (°C)
Page 1 of 2
Rev. 02 : March 24, 2005
相关型号：
SD103C-B
Rectifier Diode, Schottky, 1 Element, 0.35A, 20V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
RECTRON
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