SEOE [EIC]
SURFACE MOUNT HIGH EFFICIENT RECTIFIERS; 表面装载高效整流二极管
| 型号： | SEOE |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SURFACE MOUNT HIGH EFFICIENT RECTIFIERS |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SURFACE MOUNT
HIGH EFFICIENT RECTIFIERS
SMA (DO-214AC)
SEOA - SEOM
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
1.1 ± 0.3
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.2 ± 0.07
1.2 ± 0.2
2.1 ± 0.2
2.6 ± 0.15
2.0 ± 0.2
MECHANICAL DATA :
* Case : SMA Molded plastic
Dimensions in millimeter
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL SEOA SEOB SEOD SEOE SEOG SEOJ SEOK SEOM UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100 200 300 400 600 800 1000
70 140 210 280 420 560 700
V
V
V
A
Maximum DC Blocking Voltage
100 200 300 400 600 800 1000
1.5
IF(AV)
Maximum Average Forward Current Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
60
A
Maximum Forward Voltage at IF = 1.5 A
VF
IR
1.1
50
1.7
75
V
5
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
mA
ns
pf
IR(H)
Trr
50
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
CJ
50
TJ
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002
RATING AND CHARACTERISTIC CURVES ( SEOA - SEOM )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
+
- 0.25
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
RECTIFIED CURRENT
75
1.5
1.2
8.3 ms SINGLE HALF SINE
Ta = 50 °C
60
45
30
15
0.9
0.6
0.3
60Hz RESISTIVE OR INDUCTIVE LOAD
25 50 75 100 125
0
0
0
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
10
Pulse Width = 300ms
TJ = 100 °C
2% Duty Cycle
TJ = 25 °C
1.0
10
1.0
SEOA - SEOG
0.1
TJ = 25 °C
SEOJ - SEOM
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : April 2, 2002
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