SF12G [EIC]
GLASS PASSIVATED JUNCTION SUPER FAST RECTIFIER DIODES; 玻璃钝化结超快速整流二极管
| 型号： | SF12G |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | GLASS PASSIVATED JUNCTION SUPER FAST RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GLASS PASSIVATED JUNCTION
SUPER FAST RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High surge current capability
* High reliability
1.00 (25.4)
0.107 (2.7)
MIN.
0.080 (2.0)
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
* Pb / RoHS Free
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MECHANICAL DATA :
0.034 (0.86)
MIN.
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
0.028 (0.71)
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL SF11G SF12G SF13G SF14G SF15G SF16G SF17G SF18G SF19G UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
800 1000
560 700
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
800 1000
IF(AV)
1.0
A
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
IFSM
30
A
0.95
1.7
4.0
10
Maximum Peak Forward Voltage at IF = 1.0 A.
VF
IR
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
5.0
mA
Trr
CJ
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
35
50
ns
pf
TJ
- 65 to + 150
- 65 to + 150
°C
°C
Storage Temperature Range
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( SF11G - SF19G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
Trr
50 W
10 W
+ 0.5 A
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
- 0.25 A
50 Vdc
(approx)
OSCILLOSCOPE
( NOTE 1 )
1 W
- 1.0 A
SET TIME BASE FOR 15 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
24
18
12
6.0
1.0
0.8
8.3 ms SINGLE HALF SINE
Ta = 50 °C
0.6
0.4
0.2
0
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
100
10
SF11G- SF14G
SF15G - SF17G
TJ = 100 °C
1.0
SF18G - SF19G
0.1
1.0
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
Pulse Width = 300 ms
PERCENT OF RATED REVERSE
VOLTAGE, (%)
2% Duty Cycle
TJ = 25 °C
0.01
0
0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 7.2 8.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 25, 2005
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