W01 [EIC]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
W01
型号: W01
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON BRIDGE RECTIFIERS  
WOB  
W005 - W10  
PRV : 50 - 1000 Volts  
Io : 1.5 Ampere  
0.39 (10.0)  
0.31 (7.87)  
0.22 (5.59)  
FEATURES :  
0.18 (4.57)  
AC  
+
-
1.00 (25.4)  
MIN.  
* High case dielectric strength  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
0.034 (0.86)  
0.028 (0.71)  
* Ideal for printed circuit board  
* Pb / RoHS Free  
MECHANICAL DATA :  
-
AC  
+
0.22 (5.59)  
0.18 (4.57)  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated leads solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
AC  
0.22 (5.59)  
0.18 (4.57)  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
W005 W01  
W02  
W04  
W06  
W08  
W10  
RATING  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Current  
0.375" (9.5 mm) lead length  
IF(AV)  
1.5  
50  
A
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Rating for fusing ( t < 8.3 ms. )  
IFSM  
A
I2t  
VF  
IR  
A2S  
V
10  
1.0  
10  
Maximum Forward Voltage per Diode at IF = 1.0 A  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
mA  
IR(H)  
CJ  
1.0  
14  
mA  
pf  
Ta = 100 °C  
Typical Junction Capacitance per Diode (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
36  
°C/W  
RqJA  
TJ  
- 50 to + 150  
- 50 to + 150  
C
°
TSTG  
°C  
Notes :  
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( W005 - W10 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
50  
1.5  
1.2  
PC Board  
0.375(9.5mm)  
40  
30  
20  
TJ = 55 °C  
Copper Pads  
0.22" x 0.22" (5.5 x5.5mm)  
0.9  
0.6  
SINGLE HALF SINE WAVE  
(JEDEC METHOD)  
0.3  
0
10  
0
60 Hz, Resistive or Inductive load.  
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, ( C)  
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
20  
10  
10  
1.0  
TJ = 100 °C  
1
TJ = 25 °C  
0.1  
0.1  
TJ = 25 °C  
Pulse W idth = 300 ms  
1 % Duty Cycle  
0.01  
0.01  
0
20  
40  
60  
80  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
100  
120  
140  
FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
Page 2 of 2  
Rev. 02 : March 25, 2005  

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