W10 [EIC]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
W10
型号: W10
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:21K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON BRIDGE RECTIFIERS  
WOB  
W005 - W10  
PRV : 50 - 1000 Volts  
Io : 1.5 Ampere  
0.39 (10.0)  
0.31 (7.87)  
0.22 (5.59)  
FEATURES :  
0.18 (4.57)  
AC  
+
-
1.00 (25.4)  
MIN.  
* Glass passivated chip  
* High case dielectric strength  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA :  
-
AC  
0.22 (5.59)  
0.18 (4.57)  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated leads solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
AC  
+
0.22 (5.59)  
0.18 (4.57)  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
°
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL W005 W01  
W02  
W04  
W06  
W08  
W10 UNIT  
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 Volts  
RMS  
V
700  
Volts  
Maximum DC Blocking Voltage  
VDC  
100  
1000 Volts  
Maximum Average Forward Current  
0.375" (9.5 mm) lead length  
F(AV)  
I
1.5  
Amps.  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Rating for fusing ( t < 8.3 ms. )  
IFSM  
I2t  
50  
10  
1.0  
10  
1.0  
14  
36  
Amps.  
A2S  
Maximum Forward Voltage per Diode at IF = 1.0 Amp.  
VF  
Volts  
°
R
m
A
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 C  
I
°
R(H)  
I
Ta = 100 C  
mA  
pf  
Typical Junction Capacitance per Diode (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
CJ  
°
q
R JA  
C/W  
°
TJ  
- 50 to + 150  
- 50 to + 150  
C
STG  
°
C
T
Notes :  
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.  
UPDATE : JANUARY 24, 2000  
RATING AND CHARACTERISTIC CURVES ( W005 - W10 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
50  
40  
30  
20  
10  
1.5  
1.2  
PC Board  
0.375(9.5mm)  
J
°
C
T
= 55  
Copper Pads  
0.22" x 0.22" (5.5 x5.5mm)  
0.9  
0.6  
SINGLE HALF SINE WAVE  
(JEDEC METHOD)  
0.3  
0
60 Hz, Resistive or Inductive load.  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
°
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, ( C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
20  
10  
10  
J
°
C
T
= 100  
1.0  
1
°
TJ = 25  
C
0.1  
0.1  
J
°
C
T
= 25  
m
s
Pulse Width = 300  
1 % Duty Cycle  
0.01  
0.01  
0
20  
40  
60  
80  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
100  
120  
140  
FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  

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