EL5210C [ELANTEC]
30MHz Rail-to-Rail Input-Output Op Amps; 30MHz的轨至轨输入输出运算放大器
| 型号： | EL5210C |
| 厂家： | 
ELANTEC SEMICONDUCTOR |
| 描述： | 30MHz Rail-to-Rail Input-Output Op Amps |
| 文件： | 总14页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Features
General Description
• 30MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier)
= 2.5mA
• High slew rate = 33V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
The EL5210C and EL5410C are low power, high voltage rail-to-rail
input-output amplifiers. The EL5210C contains two amplifiers in one
package and the EL5410C contains four amplifiers. Operating on sup-
plies ranging from 5V to 15V, while consuming only 2.5mA per
amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz --
(-3dB). They also provide common mode input ability beyond the sup-
ply rails, as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply voltage.
The EL5410C and EL5210C also feature fast slewing and settling
times, as well as a high output drive capability of 30mA (sink and
source). These features make these amplifiers ideal for high speed fil-
tering and signal conditioning application. Other applications include
battery power, portable devices, and anywhere low power consump-
tion is important.
• Available in both standard and
space-saving fine pitch packages
Applications
• Driver for A-to-D Converters
• Data Acquisition
The EL5410C is available in a space-saving 14-Pin TSSOP package,
as well as the industry-standard 14-Pin SOIC. The EL5210C is avail-
able in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a
standard operational amplifier pin out. These amplifiers operate over a
temperature range of -40°C to +85°C.
• Video Processing
• Audio Processing
• Active Filters
• Test Equipment
• Battery Powered Applications
• Portable Equipment
Connection Diagram
Ordering Information
Part No.
Package
8-Pin SOIC
8-Pin SOIC
8-Pin MSOP
8-Pin MSOP
8-Pin MSOP
14-Pin SOIC
14-Pin SOIC
14-Pin TSSOP
Tape & Reel
Outline #
MDP0027
MDP0027
MDP0043
MDP0043
MDP0043
MDP0027
MDP0027
MDP0044
MDP0044
EL5210CS
-
13”
-
VOUTA
VINA-
VOUTD
VIND-
1
2
3
4
5
6
7
14
13
12
EL5210CS-T13
EL5210CY
EL5210CY-T7
EL5210CY-T13
EL5410CS
7”
13”
-
VOUTA
VINA-
VINA+
VS-
1
2
3
4
8
7
6
5
VS+
-
-
VINA+
VIND+
+
+
-
VOUTB
VINB-
VINB+
EL5410CS-T13
EL5410CR
13”
-
+
VS+
11 VS-
-
EL5410CR-T13 14-Pin TSSOP
13”
+
VINB+
VINC+
10
9
+
-
+
-
VINB-
VINC-
EL5210C (MSOP-8, SOIC-8)
VOUTB
VOUTC
8
EL5410C (TSSOP-14, SOIC-14)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2000 Elantec Semiconductor, Inc.
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Absolute Maximum Ratings (T = 25°C)
A
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied.
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
Supply Voltage between VS+ and VS-
Input Voltage
+18V
VS- - 0.5V, VS +0.5V
30mA
ESD Voltage
2kV
Maximum Continuous Output Current
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS - = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
15
Unit
Input Characteristics
VOS
Input Offset Voltage
Average Offset Voltage Drift [1]
VCM = 0V
VCM = 0V
3
7
2
1
2
mV
µV/°C
nA
TCVOS
IB
Input Bias Current
60
RIN
Input Impedance
GΩ
pF
CIN
Input Capacitance
CMIR
CMRR
AVOL
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-5.5
50
+5.5
-4.8
V
for VIN from -5.5V to 5.5V
70
80
dB
-4.5V ≤ VOUT ≤ 4.5V
65
dB
Output Characteristics
VOL
VOH
ISC
Output Swing Low
IL = -5mA
IL = 5mA
-4.9
4.9
120
30
V
V
Output Swing High
Short Circuit Current
Output Current
4.8
60
mA
mA
IOUT
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
VS is moved from 2.25V to 7.75V
No Load
80
dB
2.5
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
-4.0V ≤ VOUT ≤ 4.0V, 20% o 80%
33
140
30
V/µs
ns
tS
Settling to +0.1% (AV = +1)
-3dB Bandwidth
(AV = +1), VO = 2V Step
BW
GBWP
PM
CS
MHz
MHz
°
Gain-Bandwidth Product
Phase Margin
20
50
Channel Separation
Differential Gain [3]
Differential Phase[3]
f = 5MHz
110
0.12
0.17
dB
%
dG
RF = RG = 1kΩ and VOUT = 1.4V
RF = RG = 1kΩ and VOUT = 1.4V
dP
°
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
2
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
15
Unit
Input Characteristics
VOS
Input Offset Voltage
Average Offset Voltage Drift [1]
VCM = 2.5V
VCM = 2.5V
3
7
2
1
2
mV
µV/°C
nA
TCVOS
IB
Input Bias Current
60
RIN
Input Impedance
GΩ
pF
CIN
Input Capacitance
CMIR
CMRR
AVOL
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
45
+5.5
200
V
for VIN from -0.5V to 5.5V
66
80
dB
0.5V ≤ VOUT ≤ 4.5V
65
dB
Output Characteristics
VOL
VOH
ISC
Output Swing Low
IL = -5mA
IL = 5mA
100
4.9
120
30
mV
V
Output Swing High
Short Circuit Current
Output Current
4.8
60
mA
mA
IOUT
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
VS is moved from 4.5V to 15.5V
80
dB
No Load
2.5
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
1V ≤ VOUT ≤ 4V, 20% o 80%
33
140
30
V/µs
ns
tS
Settling to +0.1% (AV = +1)
-3dB Bandwidth
(AV = +1), VO = 2V Step
BW
GBWP
PM
CS
MHz
MHz
°
Gain-Bandwidth Product
Phase Margin
20
50
Channel Separation
Differential Gain [3]
Differential Phase[3]
f = 5MHz
110
0.30
0.66
dB
%
dG
RF = RG = 1kΩ and VOUT = 1.4V
RF = RG = 1kΩ and VOUT = 1.4V
dP
°
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
3
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
15
Unit
Input Characteristics
VOS
Input Offset Voltage
Average Offset Voltage Drift [1]
VCM = 7.5V
VCM = 7.5V
3
7
2
1
2
mV
µV/°C
nA
TCVOS
IB
Input Bias Current
60
RIN
Input Impedance
GΩ
pF
CIN
Input Capacitance
CMIR
CMRR
AVOL
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
53
+15.5
350
V
for VIN from -0.5V to 15.5V
72
80
dB
0.5V ≤ VOUT ≤ 14.5V
65
dB
Output Characteristics
VOL
VOH
ISC
Output Swing Low
IL = -7.5mA
IL = 7.5mA
170
14.83
120
mV
V
Output Swing High
Short Circuit Current
Output Current
14.65
60
mA
mA
IOUT
30
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
V
S is moved from 4.5V to 15.5V
80
dB
No Load
2.5
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
1V ≤ VOUT ≤ 14V, 20% o 80%
33
140
30
V/µs
ns
tS
Settling to +0.1% (AV = +1)
-3dB Bandwidth
(AV = +1), VO = 2V Step
BW
GBWP
PM
CS
MHz
MHz
°
Gain-Bandwidth Product
Phase Margin
20
50
Channel Separation
Differential Gain [3]
Differential Phase[3]
f = 5MHz
110
0.10
0.11
dB
%
dG
RF = RG = 1kΩ and VOUT = 1.4V
RF = RG = 1kΩ and VOUT = 1.4V
dP
°
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
4
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
EL5410C Input Offset Voltage Drift
EL5410C Input Offset Voltage Distribution
25
500
V =±5V
S
Typical
Production
Distortion
Typical
Production
Distortion
V =±5V
T =25°C
A
S
20
15
10
5
400
300
200
100
0
0
Input Offset Voltage Drift, TCV (µV/°C)
OS
Input Offset Voltage (mV)
Input Offset Voltage vs Temperature
Input Bias Current vs Temperature
0.008
0.004
0
5
4
3
2
1
0
V =±5V
S
-0.004
-0.008
-0.012
-50
-10
30
70
110
150
-50
-10
30
70
110
150
Temperature (°C)
Temperature (°C)
Output Low Voltage vs Temperature
Output High Voltage vs Temperature
-4.85
-4.87
-4.89
-4.91
-4.93
-4.95
4.96
4.95
4.94
4.93
4.92
4.91
V =±5V
S
=5mA
OUT
V =±5V
S
I
I
=5mA
OUT
-50
-10
30
70
110
150
-50
-10
30
70
110
150
Temperature (°C)
Temperature (°C)
5
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Open-Loop Gain vs Temperature
Slew Rate vs Temperature
33.85
33.80
33.75
33.70
33.65
33.60
33.55
90
V =±5V
S
V =±5V
S
R =1kΩ
L
85
80
75
70
-40
0
40
80
120
160
150
10
-50
-10
30
70
110
150
Temperature (°C)
Temperature (°C)
EL5410C Supply Current per Amplifier vs Supply
Voltage
EL5410C Supply Current per Amplifier vs
Temperature
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
2.7
2.65
2.6
T =25°C
A
V =±5V
S
2.55
2.5
2.45
2.4
4
8
12
16
20
-50
-10
30
70
110
Supply Voltage (V)
Temperature (°C)
Differential Gain and Phase
Harmonic Distortion vs V
OP-P
0.25
0.15
0.05
-0.05
-30
-40
-50
-60
-70
-80
V =±5V
S
A =2
R =1kΩ
V
V =±5V
S
HD3
L
A =1
V
R =1k
L
F
IN
= 1MHz
0
100
200
HD2
0.20
0.10
0
-0.10
0
100
IRE
200
0
2
4
6
8
V
(V)
OP-P
6
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Open Loop Gain and Phase vs Frequency
Frequency Response for Various R
L
250
150
50
140
5
3
Phase
10kΩ
1kΩ
100
60
1
0
560Ω
-50
20
-1
Gain
V =±5V
S
A =1
V
T =25°C
V =±5V
C =12pF
L
A
S
-150
-250
-20
-3
-5
150Ω
R =1kΩ to GND
L
C =12pF to GND
L
-60
10
100
1k
10k
100k
1M
10M 100M
1M
100M
10M 30M
10M 30M
100k
10M
Frequency (Hz)
Frequency (Hz)
Frequency Response for Various C
Closed Loop Output Impedance vs Frequency
L
20
10
200
160
120
80
100pF
47pF
10pF
A =1
V
1000pF
V =±5V
S
T =25°C
A
0
-10
-20
-30
R =1kΩ
L
A =1
V
40
V =±5V
S
0
10k
100k
1M
1M
100M
100k
10M
Frequency (Hz)
Frequency (Hz)
Maximum Output Swing vs Frequency
CMRR vs Frequency
80
70
60
50
40
30
10
8
6
V =±5V
S
T =25°C
A
4
A =1
V
V =±5V
S
T =25°C
A
R =1kΩ
L
C =12pF
L
2
Distortion <1%
0
10k
10
100
1k
10k
100k
1M
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
7
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Input Voltage Noise Spectral Density vs
Frequency
PSRR vs Frequency
80
1000
100
10
PSRR+
PSRR-
60
40
V =±5V
S
20
0
T =25°C
A
1
1k
10k
100k
100
1k
10k
100k
1M
10M
100M
100
1M
10M
Frequency (Hz)
Frequency (Hz)
Total Harmonic Distortion + Noise vs Frequency
Channel Separation vs Frequency Response
-60
-80
0.010
0.008
0.006
0.004
0.002
0
Dual measured Channel A to B
Quad measured Channel A to D or B to C
Other combinations yield improved rejection
-100
-120
-140
-160
V =±5V
S
V =±5V
S
R =1kΩ
L
R =1kΩ
L
A =1
V
A =1
V
V =0.5V
IN
RMS
V =110mV
IN
RMS
1k
10k
100k
1M
10M 30M
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Small-Signal Overshoot vs Load Capacitance
Settling Time vs Step Size
5
100
80
60
40
20
0
V =±5V
S
V =±5V
S
4
3
A =1
V
A =1
V
R =1k
L
0.1%
R =1kΩ
L
C =12pF
L
V =±50mV
IN
2
T =25°C
A
T =25°C
A
1
0
-1
-2
-3
-4
-5
0.1%
210
70
90
110
130
150
170
190
230
10
100
1000
Load Capacitance (pF)
Settling Time (ns)
8
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Large Signal Transient Response
Small Signal Transient Response
1V
200ns
50mV
100nS
V =±5V
S
T =25°C
A
A =1
V
R =1kΩ
L
L
V =±5V
T =25°C
A
S
C =12pF
A =1
V
R =1kΩ
L
C =12pF
L
9
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Pin Descriptions
EL5210C
EL5410C
Name
Function
Amplifier A Output
Equivalent Circuit
1
1
VOUTA
V
S+
V
S-
GND
Circuit 1
2
2
VINA-
Amplifier A Inverting Input
V
S+
V
S-
Circuit 2
3
8
5
6
7
3
4
VINA+
VS+
Amplifier A Non-Inverting Input
Positive Power Supply
(Reference Circuit 2)
5
VINB+
VINB-
VOUTB
VOUTC
VINC-
VINC+
VS-
Amplifier B Non-Inverting Input
Amplifier B Inverting Input
Amplifier B Output
(Reference Circuit 2)
(Reference Circuit 2)
(Reference Circuit 1)
(Reference Circuit 1)
(Reference Circuit 2)
(Reference Circuit 2)
6
7
8
Amplifier C Output
9
Amplifier C Inverting Input
Amplifier C Non-Inverting Input
Negative Power Supply
10
11
12
13
14
4
VIND+
VIND-
Amplifier D Non-Inverting Input
Amplifier D Inverting Input
(Reference Circuit 2)
(Reference Circuit 2)
(Reference Circuit 1)
VOUTD Amplifier D Output
10
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Applications Information
connected to GND. The input is a 10Vp-p sinusoid. The
Product Description
output voltage is approximately 9.8VP-P
.
The EL5210C and EL5410C voltage feedback amplifi-
ers are fabricated using a high voltage CMOS process.
They exhibit Rail-to-Rail input and output capability,
are unity gain stable and have low power consumption
(2.5mA per amplifier). These features make the
EL5210C and EL5410C ideal for a wide range of gen-
eral-purpose applications. Connected in voltage follower
mode and driving a load of 1kΩ and 12pF, the EL5210C
and EL5410C have a -3dB bandwidth of 30MHz while
maintaining a 33V/µS slew rate. The EL5210C is a dual
amplifier while the EL5410C is a quad amplifier.
5V
10µS
V =±5V
S
T =25°C
A
A =1
V
V =10V
IN
P-P
5V
Operating Voltage, Input, and Output
The EL5210C and EL5410C are specified with a single
nominal supply voltage from 5V to 15V or a split supply
with its total range from 5V to 15V. Correct operation is
guaranteed for a supply range of 4.5V to 16.5V. Most
EL5210C and EL5410C specifications are stable over
both the full supply range and operating temperatures of
-40 °C to +85 °C. Parameter variations with operating
voltage and/or temperature are shown in the typical per-
formance curves.
Figure 1. Operation with Rail-to-Rail Input and
Output
Short Circuit Current Limit
The EL5210C and EL5410C will limit the short circuit
current to +/-120mA if the output is directly shorted to
the positive or the negative supply. If an output is
shorted indefinitely, the power dissipation could easily
increase such that the device may be damaged. Maxi-
mum reliability is maintained if the output continuous
current never exceeds +/-30mA. This limit is set by the
design of the internal metal interconnects.
The input common-mode voltage range of the EL5210C
and EL5410C extends 500mV beyond the supply rails.
The output swings of the EL5210C and EL5410C typi-
cally extend to within 100mV of positive and negative
supply rails with load currents of 5mA. Decreasing load
currents will extend the output voltage range even closer
to the supply rails. Figure 1 shows the input and output
waveforms for the device in the unity-gain configura-
tion. Operation is from +/-5V supply with a 1kΩ load
Output Phase Reversal
The EL5210C and EL5410C are immune to phase rever-
sal as long as the input voltage is limited from VS- -
0.5V to VS+ +0.5V. Figure 2 shows a photo of the out-
put of the device with the input voltage driven beyond
the supply rails. Although the device's output will not
change phase, the input's overvoltage should be avoided.
If an input voltage exceeds supply voltage by more than
0.6V, electrostatic protection diodes placed in the input
11
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
stage of the device begin to conduct and overvoltage
damage could occur.
power supply voltage, plus the power in the IC due to the
loads, or:
P
= Σi[V × I
+ (V + – V
i) × I
i]
LOAD
DMAX
S
SMAX
S
OUT
1V
10µS
when sourcing, and
P
= Σi[V × I
+ (V
i – V -) × I
i ]
LOAD
DMAX
S
SMAX
OUT
S
V =±2.5V
S
when sinking.
Where:
T =25°C
A
A =1
V
V =6V
IN
P-P
i = 1 to 2 for Dual and 1 to 4 for Quad
VS = Total Supply Voltage
1V
I
SMAX = Maximum Supply Current Per Amplifier
Figure 2. Operation with Beyond-the-Rails
Input
V
OUTi = Maximum Output Voltage of the
Application
Power Dissipation
ILOADi = Load current
With the high-output drive capability of the EL5210C
and EL5410C amplifiers, it is possible to exceed the
125°C 'absolute-maximum junction temperature' under
certain load current conditions. Therefore, it is important
to calculate the maximum junction temperature for the
application to determine if load conditions need to be
modified for the amplifier to remain in the safe operating
area.
If we set the two PDMAX equations equal to each other,
we can solve for RLOADi to avoid device overheat. Fig-
ure 3 and Figure 4 provide a convenient way to see if the
device will overheat. The maximum safe power dissipa-
tion can be found graphically, based on the package type
and the ambient temperature. By using the previous
equation, it is a simple matter to see if PDMAX exceeds
the device's power derating curves. To ensure proper
operation, it is important to observe the recommended
derating curves shown in Figure 3 and Figure 4.
The maximum power dissipation allowed in a package is
determined according to:
T
– T
AMAX
JMAX
P
= --------------------------------------------
DMAX
Θ
JA
Where:
TJMAX = Maximum Junction Temperature
AMAX= Maximum Ambient Temperature
JA = Thermal Resistance of the Package
T
Θ
PDMAX = Maximum Power Dissipation in the
Package.
The maximum power dissipation actually produced by
an IC is the total quiescent supply current times the total
12
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
lower. The inverting input should be directly connected
to the output and the non-inverting input tied to the
ground plane.
Packages Mounted on a JEDEC JESD51-7 High
Effective Thermal Conductivity Test Board
1200
1000
800
600
400
200
0
1.136W
MAX T =125°C
J
Driving Capacitive Loads
1.0W
909mW
The EL5210C and EL5410C can drive a wide range of
capacitive loads. As load capacitance increases, how-
ever, the -3dB bandwidth of the device will decrease and
the peaking increase. The amplifiers drive 10pF loads in
parallel with 1kΩ with just 1.2dB of peaking, and 100pF
with 6.5dB of peaking. If less peaking is desired in these
applications, a small series resistor (usually between 5Ω
and 50Ω) can be placed in series with the output. How-
ever, this will obviously reduce the gain slightly.
Another method of reducing peaking is to add a "snub-
ber" circuit at the output. A snubber is a shunt load
consisting of a resistor in series with a capacitor. Values
of 150Ω and 10nF are typical. The advantage of a snub-
ber is that it does not draw any DC load current or
reduce the gain
833mW
SO14
=88°C/W
SO8
=110°C/W
θ
JA
θ
JA
TSSOP14
=100°C/W
MSOP8
=115°C/W
JA
θ
JA
θ
0
25
50
75 85 100
125
150
Ambient Temperature (°C)
Figure 3. Package Power Dissipation vs
Ambient Temperature
Packages Mounted on a JEDEC JESD51-3 Low
Effective Thermal Conductivity Test Board
Power Supply Bypassing and Printed Circuit
Board Layout
1200
MAX T =125°C
J
1000
800
600
400
200
0
The EL5210C and EL5410C can provide gain at high
frequency. As with any high-frequency device, good
printed circuit board layout is necessary for optimum
performance. Ground plane construction is highly rec-
ommended, lead lengths should be as short as possible
and the power supply pins must be well bypassed to
reduce the risk of oscillation. For normal single supply
operation, where the VS- pin is connected to ground, a
0.1µF ceramic capacitor should be placed from VS+ to
pin to VS- pin. A 4.7µF tantalum capacitor should then
be connected in parallel, placed in the region of the
amplifier. One 4.7µF capacitor may be used for multiple
devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are
to be used.
SO14
=120°C/W
JA
θ
833mW
606mW
TSSOP14
=165°C/W
625mW
θ
JA
485mW
SO8
=160°C/W
θ
JA
MSOP8
=206°C/W
θ
JA
0
25
50
75 85 100
125
150
Ambient Temperature (°C)
Figure 4. Package Power Dissipation vs
Ambient Temperature
Unused Amplifiers
It is recommended that any unused amplifiers in a dual
and a quad package be configured as a unity gain fol-
13
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the cir-
cuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to sup-
port or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users con-
templating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elan-
tec, Inc.’s warranty is limited to replacement of defective
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax:
(408) 945-9305
components and does not cover injury to persons or property or
other consequential damages.
European Office: +44-118-977-6080
Japan Technical Center: +81-45-682-5820
Printed in U.S.A.
14
相关型号：
©2020 ICPDF网 联系我们和版权申明