E522.31_16 [ELMOS]
CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER;
| 型号： | E522.31_16 |
| 厂家： | 
ELMOS SEMICONDUCTOR AG |
| 描述： | CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER |
| 文件： | 总20页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Features
General Description
E522.31 and E522.33 are part of a family of fixed fre-
quency switched-mode high voltage LED power sup-
plies and controllers with high efficiency. Integrated
high-side sensing allows topologies related to the sup-
ply input (Boost-to-Battery) or to GND (Boost-to-GND).
ÿ
ÿ
Switched-Mode, PWM LED Controller
5V to 55V input voltage range, up to 80V boosted
output voltage
ÿ
Boost-, SEPIC, Buck-Boost- or Buck Topology
supported
ÿ
ÿ
ÿ
Constant Current Regulation implemented
High-Precision Differential High-Side Sense up to 60V
High-Frequency PWM Dimming Capability for
constant LED Color
The device is suitable for operation in boost-, buck-
boost-, SEPIC- and buck-topologies, particularly in harsh
automotive environments.
ÿ
ÿ
ÿ
Analog 10:1 Dimming Capability for LED Binning
Integrated Softstart
Advanced Error Detection (e.g. Over-Voltage,
Open-Load Detection, different Shorts or GND Loss)
Integrated Automotive LDOs for 5V & 3.3V
AEC-Q100 Qualified
The constant switching frequency is adjustable up to
600kHz by an external resistor or can be synchronized
in Master-Slave configurations with other devices.
ÿ
ÿ
ÿ
Multiple control- and monitoring functions, e.g. short-
and open load detection, over-temperature shutdown
and under-voltage lockout are implemented.
Junction temperature range -40°C to +150°C
Applications
Ordering Information
ÿ
Automotive LED lighting Applications (daytime
running light, indicator, front- and rear light,
interior lighting etc.)
Oscillator
Spectrum
Softstart
Ramping
Ordering-No.
Package
E52231A61C
spread Slow Ramping (SR) QFN32L5
ÿ
ÿ
ÿ
General Indoor and Outdoor Lighting and -Signals
TFT Backlighting
General Current driven Applications
E52231A61CXFR spread Fast Ramping (FR) QFN32L5
E52233A61C narrow Slow Ramping (SR) QFN32L5
E52233A61CXFR narrow Fast Ramping (FR) QFN32L5
Typical Application Circuit
VSM
VSM
AGND
VIN
NC
VIN
FBL
FBL
ON
FBH
FBH
OSCIN
PWDIM
I.C.
OVPIN
OVP
OVPO
NC
µC
E522.31
DIM
LGATE
NC
NC
NC
VSM
VIN
OVP
FBH
FBL
DIM
“ Boost to GND Circuit ”
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
1/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Functional Diagram
LDO Reg
Main
VIN
VSM
Supply
Internal
Standby
Supply
UVLO &
Thermal
Protection
AGND
Power On
Reset
Driver
Protection
ON
DIM
LEB
DRVS
CGATE
PGND
Duty Max
Blanking
Sync-SW
RT
Oscillator
DRV
Slope
Gen
Reference
Unit
LGATE
ERRB
LDRV
AGND
SLOPE
IREF
VBG
PWM
Logic
Dimming
Logic
PWDIM
ON
Internal
3V3 LDO
V3V3
OSCIN
VSM
OVPIN
OVPO
Open Load
& Short
Detection
ON
DIM
HSAMP
DIM
FBH
FBL
GM
VILIM
CMP
LEB SLOPE
OFFSET
GAIN
CSP
CSN
Slope
&
LEB
Adim
Circuit
ADIM
CMP
ILP
IAMP
OFFSET
Soft
Start
LS & HZ
Buffer
Auxiliary
Supply
CMP
VSM
ILP
VDD
CLOCK
SI
Adjustment
Unit
DATA
SO
E522.31/33
Pin Configuration
Top View
ꢁottom Side
24 23 22 21 20 19 18 17
Eꢀꢀꢁ
25
26
27
28
29
30
31
32
16
15
14
13
12
11
10
9
Nꢂ
Nꢂ
ꢂMꢃ
ꢀꢄ
Nꢂ
Nꢂ
ꢃGND
DꢀꢆS
ꢂGAꢄE
ꢂSꢃ
Nꢂ
E522.31/33
ADꢅM
ꢆꢇꢆꢇ
ꢆSM
EP
ꢂSN
1
2
3
4
5
6
7
8
ꢃin 1
Note: Not to scale, EP Exposed die pad
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
2/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Pin Description
Pin Name
Type 1)
Description
Analog Ground. Ground pin for analog blocks. Make a short, low impedance con-
nection between this pin and GND.
1
2
3
AGND
VIN
S
HV_S
HV_A_I
High voltage supply input. Bypass with low ESR capacitance to GND.
Control input to activate/disable the IC. CMOS compatible logic input with high-
voltage capability and pulldown current.
ON
5V & 3.3V compatible input pin with pulldown current for synchronization to
external clock. Solder to GND to use RT defined internal oscillator.
If used, a resistor matching the applied input frequency has to be connected to
RT (see RT pin description).
4
OSCIN
D_I
D_I
PWM dimming input with pullup current to V3V3. For constant LED color, PWM
is used to control brightness. 5V CMOS compatible as well as open-drain com-
patible input. If not needed, solder this pin to V3V3 for continuous operation.
5
PWDIM
6
7
8
9
IC
Reserved for factory use. Connect to AGND in application
Dimming output for regulation circuit. Low Side Gate driver output to conrol N-
channel MOSFET types. If not needed leave this pin open.
LGATE
NC
D_O
Not connected
Negative low-side converter current sense input. The negative biased shunt re-
sistor terminal is connected to this pin.
CSN
A_I
Positive low-side converter current sense input. The positive biased shunt resis-
tor terminal is connected to this pin.
10
11
CSP
A_I
Low-Side switch gate driver output. Connect the gate of the external logic level
N-channel MOSFET to this pin.
CGATE
D_O
Gate driver supply voltage. Connect a low ESR ceramic capacitor between this
pin and PGND. Connect either VSM via a decoupling resistor or an external volt-
age source to this pin.
12
13
DRVS
S
S
Power Ground. Ground pin for CGATE high power drivers. Make a short, low-im-
pedance connection to GND
PGND
14
15
16
17
18
19
NC
NC
NC
NC
NC
NC
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Over voltage protection output. Connect the low-side resistor of over-voltage
protection feedback to this pin.
20
21
OVPO
OVPIN
A_IO
Over voltage protection input. Connect the high side of an external resistor di-
vider for over voltage protection to this pin.
HV_A_I
Positive high-side feedback input for regulation circuit. Connect the positive ter-
22
23
FBH
FBL
HV_A_I minal of sensing shunt resistor to this pin. For good regulation, keep the connec-
tion to the shunt as short as possible.
Negative high-side feedback input for regulation circuit. Connect the negative
HV_A_I terminal of sensing shunt resistor to this pin. For good regulation, keep the con-
nection to the shunt as short as possible.
24
25
26
NC
Not connected.
Open-drain error output. Low-impedant in case of Open Load, short circuit or
over-temperature events.
ERRB
NC
D_O
Not connected.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
3/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Pin Name
Type 1)
Description
27
28
29
30
31
32
-
CMP
A_IO
Error amplifier compensation. Connect the compensation circuit to this pin.
Oscillator control. For free-running operation, connect a resistor between this
pin and AGND. If an external synchronization clock is applied to OSCIN, the ac-
cording resistor must be applied at RT.
RT
A_IO
NC
Not connected.
Analog dimming input. The input voltage at this pin controls the LED current
sensing at FBH and FBL.
To use internal reference voltage solder to V3V3.
ADIM
V3V3
VSM
EP
A_I
S
3.3V regulator output. Connect to AGND with a ceramic capacitance of typ. 1µF.
Internal 5V low drop regulator output. Bypass this pin to AGND with a ceramic
capacitance of typ. 1µF. Additionally, the VSM voltage can be connected to DRVS
via a decoupling resistor so supply the CGATEx drivers.
S
S
Exposed Die Pad Connect to AGND
1) A = Analog, D = Digital, S = Supply, I = Input, O = Output, B = Bidirectional, HV = High Voltage
ESD:
More details according this topic are described in the "ESD" chapter.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
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Data Sheet
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1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
1 Absolute Maximum Ratings
Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress rat-
ings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages
with respect to ground. Currents flowing into terminals are positive, those drawn out of a terminal are negative.
Description
Condition
Symbol
VVIN
Min
-0.3
-0.3
-0.3
-0.3
Max
55
Unit
V
High Voltage Supply Input VIN
High Voltage Supply Input VIN, transient tMAX = 500ms
Voltage at pin FBH
VVIN,TRAN
VFBH
60
V
60
V
Voltage at pin FBL
VFBL
60
V
Differential Voltage between
t
MAX < 1h 1)
VFBH-FBL,MAX
-60
60
V
Feedback Pins FBH & FBL
Voltage at pin OVPIN
Voltage at pin OVPO
Voltage at pin ADIM
Voltage at pin PWDIM
Voltage at pin RT
VOVPIN
VOVPO
VADIM
VPWDIM
VRT
-0.3
-0.3
-0.3
-0.3
-0.3
-2
80
V
VV3V3
VV3V3
VVSM
VV3V3
2
V
V
V
V
Input current at pin RT
Voltage at pin ON
IRT
mA
V
VON
-0.3
-0.3
55
Voltage at pin VSM
VVSM
5.5
V
V
> 5.5V
OVNIN= '1'
Output current at pin VSM
IVSM
-65
0
mA
Voltage at pin OSCIN
VOSCIN
ICGATE,AVG
ILGATE,AVG
VERRB
IERRB
-0.3
VVSM
40
2
V
Averaged Output Current at pin CGATE
Average Output Current at pin LGATE
Voltage at pin ERRB
mA
mA
V
-0.3
0
7.5
5
Input Current at pin ERRB
Voltage at pin CSN and CSP
Voltage at pin V3V3
mA
V
VCS
-0.3
-0.3
-25
-0.3
-0.3
-0.3
-2
VV3V3
3.6
0
VV3V3
IV3V3
V
Current at pin V3V3
V
VSM = 5V
mA
V
Voltage at pin DRVS
VDRVS
VCMPX
VPGND
VESD
7.5
VV3V3
0.3
2
Voltage at pin CMP
V
PGND to AGND
V
ESD Protection at all pins
AECQ-100 HBM
kV
Thermal resistance (junction to case)
QFN32L5
RT_J-C
TJ
packaged devices TA
5
K/W
Junction temperature
-40
-40
-40
150
125
150
°C
°C
°C
Ambient temperature
Storage temperature, soldered
soldered device
TS1
un-soldered
device
Storage temperature, unsoldered
Total Power Dissipation
TS2
-40
125
°C
PTOT
1500
mW
1) Absolute maximum ratings VFBH and VFBL must not be exceeded
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
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1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
2 ESD Protection
Description
Condition
HBM 1)
CDM 2)
Symbol
VPINS-ALL
Min
Max
Unit
kV
ESD HBM
2
-
-
-
ESD CDM at corner pins
ESD CDM at all other pins
VPINS EDGE
VPINS-OTHER
0.75
0.5
kV
2)
CDM
kV
Note: Test point defined as tested pin to supply.
1) According to AEC-Q 100-002, Human Body Model, 1.5kΩ resistance, 100pF capacitance.
2) According to AEC-Q 100-011, Charged Device Model, pulse rise time (10% to 90%) <400ps, 1Ω resistance.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
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1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
3 Recommended Operating Conditions
Parameters are guaranteed within the range of recommended operating conditions unless otherwise specified.
All voltages are referred to ground (0V). Typical Parameters are given for VVIN= 14V and TJ = +25 °C.
Currents flowing into the circuit have positive values.
The first electrical potential connected to the IC must be GND to avoid excessive current flow in other pins.
Description
Condition
Symbol
VIN
Min
5.5
4
Typ
Max
55
Unit
V
Supply voltage VIN
Voltage at pin FBL
14
VFBL
56
V
VFBL
+
VFBL+
400m
Voltage at pin FBH
VFBH
VFBL
V
200m
Voltage at pin OVPIN
VOVPIN
80
V
Voltage at pin OVPO
VOVPO
3
V
Resistance from OVPO to GND
External Reference at pin ADIM
ROVPO
10
20
33
kΩ
V
VADIM,EXREF
0.24
2.4
Voltage at pin ADIM for internal
Reference Voltage
V
-
0.V235V3
VADIM,INTREF
VPWDIM
VV3V3
V
V
Voltage at Dimming Inputs PW-
DIM
0
VVSM
RT Current to define fOSC
Resistance from RT to GND
Voltage at pin ON
IRT
-24
50
0
-10
120
55
3
µA
kΩ
V
RRT
VON
Resistor to supply DRVS using VSM
RVSM,DRVS
1
Ω
Sink impedance of external open
drain at PWDIM
ZPWDIM
2
kΩ
SMPS Frequency
x ext. Gatecharge
driven
Average Output Current at pin
CGATE
ICGATE
25
mA
Average Output Current at pin
LGATE
Dimming Frequency x
Gatecharge at LGATE
ILGATE
IERRB
2
mA
mA
kHz
Input Current at pin ERRB
0
3
External Synchronization Frequen-
cy applied to pin OSCIN
fOSCIN
225
0
650
400
Voltage at pin CSP
VCSP
VCSN
VDRVS
TJ
mV
mV
V
1)
Voltage at pin CSN to AGND
Voltage at pin DRVS
0
4.75
-40
-40
0.8
47
VVSM
7.5
Junction temperature
+150
+125
2
°C
Ambient temperature
TA
°C
Capacitance at VSM to AGND
Capacitance at pin VIN to GND
ESR < 0.6Ω
ESR < 0.1Ω
CVSM
CVIN
CV3V3
1
µF
µF
µF
120
1
Capacitance from pin V3V3 to AGND ESR < 0.6Ω
0.8
2
ESR < 0.1Ω
Capacitance from DRVS to PGND
ESL < 5 nH
CDRVS
1
2.2
µF
Maximum Total Capacitance at
pins OVPIN and OVPO
COVP
20
pF
V
1)
PGND to AGND
VPGND
0
1) Pins must be soldered to PCB GND potential
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
7/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
4 Electrical Characteristics
(VVIN = +5.5V to +55V, TAMB = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = +14V and TAMB
+25°C. Positive currents flow into the device pins.)
=
Description
Condition
Symbol
Min
Typ
Max
Unit
Supply
Supply voltage at VIN
VIN
5.5
14
8
55
V
ON = '0'
TJV=IN25°C
Sleep Mode Current Consumption
V
=14V
IVIN,SLEEP
µA
ON = '1'
Active VIN Supply Current
Nominal Output voltage at VSM
Low-Drop Voltage of VSM
IVIN,ACTIVE
VVSM,NOM
VVSM,LDO
VVSM,RESH
IVSM,EXT
2.2
5
3.7
mA
V
no switching
ON = '1'
VVIN = 14V
4.75
4.7
5.25
VVIN=5.2V
V
IVSM=50mA 1)
Reset Threshold relative to nomi-
nal VVSM
VVSM,
NOM
VVSM rising
0.925
ON = High,
VVIN = 6 ... 55V
External VSM Current 2)
External V3V3 Current 2)
-40
-15
65
mA
mA
mA
V
ON='1'
VVSM > 4.75V
IV3V3,EXT
Short Current Limitation of VSM
Regulator
VVIN = 14V
VVSM= 0V
IVSM,SHORT
VV3V3,NOM
VV3V3,RESH
IV3V3,SHORT
VDRVS,RESH
VDRVS,RESL
110
3.3
ON = '1'
VVSM > 4.75V
V3V3 Voltage Regulator Output
3.13
3.47
Reset Threshold relative to
nominal VV3V3
VV3V3,
NOM
VV3V3 rising
0.925
55
Short Current Limitation V3V3
Regulator
VVSM>4.7V
VV3V3 = 0V
20
mA
Reset threshold of DRVS input,
relative to VSM
VVSM>VVSM,RESH
VDRVS rising
0.92
0.85
VVSM
VVSM
Reset threshold of DRVS input,
relative to VSM
VVSM>VVSM,RESH
VDRVS falling
Enable Threshold at pin ON
Disable Hysteresis at pin ON
VVIN=14V
VON,ENA
VON,HYST
1.4
5
1.5
18
1.6
V
V
VIN=14V
mV
VVIN = 14V
VON = 1.5V
Pulldown Current at pin ON
ION,PD
10
µA
Thermal Shutdown Junction
Temperature
TJ rising
TJ,OFF
160
25
°C
°C
Hysteresis of Thermal Shutdown
TJ falling 3)
TJ,OFF,HYST
Oscillator
Upper Oscillator Frequency Setting RRT = 50kΩ
Lower Oscillator Frequency Setting RRT = 120kΩ
fOSC,INT,H
fOSC,INT,L
564
235
600
250
636
265
kHz
kHz
1) Overall current at VSM voltage regulator, including IC current consumption
2) The sum of external currents at voltage regulators must not exceed 40mA
3) Not production tested
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
8/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Electrical Characteristics (continued)
(VVIN = +5.5V to +55V, TAMB = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = +14V and TAMB
+25°C. Positive currents flow into the device pins.)
=
Description
Condition
Symbol
RRT,INT
Min
50
Typ
Max
120
650
Unit
kΩ
RT Resistor Range for Internal
fOSCIN = 0 Hz
Oscillator Operation 1)
OSCIN External Frequency Range 2)
fOSCIN,EXT
225
kHz
ns
Minimum High or Low Pulsewidth
at OSCIN for Synchronization
TPULSE,MIN,OSCIN 660
RT Resistor Range for external
Clock Synchronization
225kHz ≤ fOSC,IN ≤ 650kHz RRT,EXT
47
-5
137
5
kΩ
%
Tracking between RRT and OSCIN
frequency for external Oscillator
Synchronization
2)
RRT,OSCIN
f
OSCIN = 0 Hz
Typical Range for Spread Spectrum
Modulation of internal Oscillator
fSPREAD
-40
40
kHz
only valid for E522.31
Digital Dimming Logic
Minimum PWDIM Pulse Width
PWDIM Frequency
3)
TPWDIM,MIN
fPWDIM
2
µs
Hz
20
400
64
2000
Timeout for CMP and Softstart
Reset
PWDIM = '0'
TPWM,TIMEOUT
RON,LGATEH
RON,LGATEL
ILGATE,AVG
ms
Ω
I
LGATE = -5mA
LGATE Pullup Resistance
LGATE Pulldown Resistance
Average Current in LGATE
30
18
TJ = 25°C
I
LGATE = 5mA
Ω
TJ = 25°C
I
LGATE,AVG = fPWDIM
x
2
mA
QGATECHARGE + ILGATE,DC
Pullup Current at PWDIM to V3V3 VPWDIM = 1V
IPWDIM,PU
VPWDIM,H
VPWDIM,L
-100
-80
2.1
1.2
-60
µA
V
High Threshold at PWDIM
Low Threshold at PWDIM
VPWDIM rising
VPWDIM falling
V
PWDIM = '1'
Typical Delay by Internal Softstart
Ramp (standard setting)
(E52231A61C,
tSOFTSTART
7.5
ms
E52233A61C) 4) 5)
PWDIM = '1'
Rising Voltage Slope at CMP during
Softstart (standard setting)
dV/
mV /
ms
(E52231A61C,
200
3.75
400
dtCMP,START1
E52233A61C) 5)
PWDIM = '1'
Typical Delay by Internal Softstart
Ramp (fast setting)
(E52231A61CXFR,
tSOFTSTART,FAST
ms
E52233A61CXFR) 4) 5)
PWDIM = '1'
Rising Voltage Slope at CMP during
Softstart (fast setting)
dV/
dtCMP,START2
mV /
ms
(E52231A61CXFR,
E52233A61CXFR) 5)
1) E522.31 drives typical 1.2V to the RT node
2) The external input frequency must be matched to the frequency given by RRT to detect a valid OSCIN signal
3) Note that the delays in external dimming circuit or magnetic components may limit the dimming pulse width above the
E522.3x limit
4) The time given is the typical delay that is necessary to reach a sufficiently high CMP voltage to regulate a typical application.
May vary depending on implementation details
5) Not production tested
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
9/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Electrical Characteristics (continued)
(VVIN = +5.5V to +55V, TAMB = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = +14V and TAMB
+25°C. Positive currents flow into the device pins.)
=
Description
Condition
Symbol
Min
Typ
Max
Unit
Analog Dimming and Highside Sense
External voltage refer-
ence applied
ADIM Input Voltage Range
VADIM,EXT
VADIM,INT
0.24
192
2.4
V
Internal Reference Voltage for
FBH,FBL
VADIM = VV3V3
200
208
mV
ADIM Pull-Down Current to AGND VADIM = 1V
Under-voltage Threshold for ADIM
Gain from ADIM to FBH/FBL
IADIM,PD
0.75
160
1/6
µA
VADIM,ERR
AADIM,FB
mV
Linearity Error of ADIM to FBH/FBL
0.6V ≤ VADIM ≤ 2.4V 1)
VIN = 14V
VVIN = 14V
LADIM,FB
3
%
Gain
Input voltage at FBL pin
Input voltage at FBH input
V
VFBL
4
56
V
V
VFBH
VFBL
VFBL+0.4
Highside Feedback Amplifier Input
Currents
IFB = IFBH+IFBL
IFB
125
3.8
16
µA
V
VFBH = VFBL = 14V
Undervoltage Detection at FBL
and FBH
3)
VFB,UV
tERR,DIM
VERR,DIM
4
Error detection delay after falling
edge at PWDIM
Evaluation of VFBH -
VFBL during dimming
14
µs
mV
Error Detection Threshold Voltage Evaluation of VFBH-VFBL
after falling edge at PWDIM
50
during dimming
Inner Current Regulation Loop
Voltage VCSP referred to
GND
Positive low-side Shunt Sense
Input Voltage
VCSP
400
-5
mV
Average Pull-Up Current at CSP
Pull-Down Current at CSN
VCSP = 0V
ICSP,PU
ICSN,PD
-20
5
µA
µA
Over-Current Protection Threshold
at CSP
VCSP,OCP
425
mV
V
DRVS = 5V
Pull-Up On-Resistance of CGATE
ICGATE = -100mA
TJ = 25°C
RON,CGATEH
1.6
Ω
V
DRVS = 5V
Pull-Down On-Resistance of CGATE ICGATE = 100mA
TJ = 25°C
RON,CGATEL
1.2
Ω
ICGATE,AVG = fOSC
QGATECHARGE
x
Average Current in CGATE
ICGATE,AVG
IDRVS,MIN
TOFF
25
mA
µA
ns
2)
Minimum current consumption at
DRVS
V
= 0V
TJC=GA2TE5°C
7
15
CGATE On-Pulse Width during
Over-Current Condition
VCSP ≥ 500 mV 4)
130
89
VCMP= VV3V3
Maximum CGATE Dutycycle
DCCGATE,MAX
%
Softstart finished
1) For reference voltages at ADIMx below 0.6V the linearity error may scale to higher values
2) Value limited to avoid excessive current flow in VSM regulator, see also „1 Absolute Maximum Ratings“
3) Consider this parameters espesially for SEPIC or Flyback topologies
4) Not production tested
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
10/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Electrical Characteristics (continued)
(VVIN = +5.5V to +55V, TAMB = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = +14V and TAMB
+25°C. Positive currents flow into the device pins.)
=
Description
Condition
Symbol
Min
Typ
Max
Unit
Outer Regulation Loop
Transconductance differential
Voltage VFBH-FBL to CMP
TJ = 25°C
GM
4000
85
µS
dB
µA
Openloop DC Gain from VFBH-FBL to
CMP
3)
ADC
TJ = 25°C
VCMP = 1.5V
Maximum Input / Output Current
at CMP
ICMP,MAX
40
V
PWDIM = 0V
Leakage Current at CMP during
Dimming
TJ ≤ 85°C
VCMP = 1.5V
ICMP,LEAK
1
30
nA
3)
Under-voltage protection at CMP
Over-Voltage Protection
VOVERDR,CMP
160
mV
Input Voltage at OVPIN pin
Input voltage at OVPO pin
VOVPIN
80
V
V
V
VOVPO
VV3V3
1.24
1)
Over-Voltage Protection Threshold
VOVPO,OFF
1.16
1.20
V
OVPIN = 5 ... 80V,
TJ = 25°C
VON=0V or VPWDIM=0
Sleep / Dimming Leakage Current
at OVPIN
ILEAK,OVPIN
0.1
µA
I
ACTIVE,OVPIN = VOUT/
Active Current Flow into OVPIN
IACTIVE,OVPIN
tOVP,DETECT
130
25
µA
µs
2)
(ROVPIN+ROVPO
)
PWDIM = '1'
ON = '1'
Over-Voltage Detection Delay
ERRB Output
10
3)
I
ERRB = 3mA
Output Voltage of active ERRB
VERRB,L
200
400
5
mV
Error detected
TJ < 150°C
No Error detected
Error detected
ERRB Leakage Current
IERRB,Z
µA
ms
Minimum ERRB Low Pulse Width
tERRB,ON
0.8
1
1) Hysteresis is provided by internal minimum pulse width of ERRB signal of typ. 1ms
2) The parameter VOUT describes the output voltage of the converter in a typical application
3) Not production tested
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
11/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
5 Functional Description
5.1 General
The E522.3x family is a versatile high voltage controller For further reduction of electromagnetic emission
family for LED drivers. They can be configured for buck E522.31/32 are running with spread spectrum local os-
from battery, buck-boost, SEPIC or boost topologies, ei- cillator. The spread spectrum is only applied if there is
ther to VIN or GND.
no input frequency at OSCIN.
This flexibility combined with the high supply voltage The internal low-drop regulators VSM and V3V3 can be
of 55V, the very large output voltage range and the used to supply external low-power components with a
possibility to drive high power LED arrays makes the total current consumption up to 15mA(E522.32/34)and
E522.3x family ideal for
40mA(E522.31/33) at 5V (VSM) and 3.3V (V3V3) supply.
LED lighting applications
Automotive environment, e.g. headlight control
Residential and outdoor lighting applications
The internal oscillator can be configured for free-run-
ning mode with fixed frequency, controlled by a resistor
at the RT pin, or synchronized by an external clock input
at OSCIN (Slave mode in a Master-Slave configuration).
The E522.3x family consists of E522.31/33 for one LED
chain and E522.32/34 for two LED chains. In all two The LED controllers support PWM dimming for LED
channel family members the Switch Mode Power Sup- brightness control without color change and analog
plies are 180° out of phase for reduced EMI. Digital dimming for adjusting the LED initial current. The PWM
PWM and analog dimming for each LED channel are in- of E522.3x dimming allows a wide dimming ratio of
dependent and can be adjusted separately.
>1000:1 at PWM frequencies up to 400Hz.
5.2 Supply
The supply generates all necessary voltages to oper- V3V3 voltage regulator is used to power most of the in-
ate E522.3x from VIN. Furthermore supervision of VVIN
VVSM, VV3V3 and device temperature are performed.
,
ternal analog circuitry. It may also be used to drive ex-
ternal components, but in this case the total external
current provided by VSM and V3V3 must not exceed
The VSM low-drop voltage regulator provides 5V for pe- 40mA. Use 1µF ceramic capacitance (X7R) to stabilize
ripheral structures and CGATE driver. It is controlled by V3V3.
the ON pin and the internal temperature supervision.
For proper stabilization use typ. 1µF ceramic capaci-
tance (X7R recommended).
5.3 Oscillator
The internal oscillator defines the operation frequency For synchronous operation to an external clock source,
of the device, adjustable from 250 to 600kHz by an ex- a frequency can be applied to OSCIN.
ternal resistor at pin RT. Any Frequency in this range can In case of external clock it is necessary to apply a resis-
be set by linear interpolation between the values given tor to RT with a value matching the synchronizing fre-
in the table above ( RRT=50kΩ*600kHz/frequency ). To quency. Tolerance between frequency set by RRT and fOS-
use the internal oscillator, solder OSCIN to AGND.
CIN is defined in RRT,OSCIN.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
12/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
5.4 Digital Dimming Logic
The PWM logic block controls the digital dimming of 0 the rising edge of VPWDIMx this check is disabled again.
to 100% at pin PWDIM. When PWM = '0' is applied to The PWM range of 0 to 100% with 0.1% resolution per-
pin PWDIM, E522.3x is set to hold state (high imped- mits LED brightness control of >1000:1 at a PWM fre-
ant) for the regulation signal at CMPx. LGATE outputs quency of 400Hz.
are set to match internal synchronization of PWM. Di- Note, that during dimming the current in the exter-
rect control of external dimming transistors is not rec- nal inductor must settle to provide proper regulation.
ommended.
Therefore the minimum dimming pulse width depends
At the falling edge of the PWM signal, dimming circuit is on the external circuitry, input voltages and external
checked for short circuit connections. To verify that the resonant frequencies, too.
external current is switched off, typ. 16µs after switch- Internal pull-up current to V3V3 makes the PWDIMx
ing LGATE '0', internal control circuitry for short detec- pins suitable for open-drain / open-collector control
tion in the external dimming circuit is enabled. The circuits. The voltage capability of VVSM makes this input
threshold for this detection is typ. 50mV VFBH-FBL. With 5V/3.3V compatible as well.
5.5 Analog Dimming and Highside Sense
The ADIM section provides LED current adjustment, in- any topology FBH must be connected to the positively
dependent of digital dimming feature (e.g. binning or biased shunt resistor terminal.
initial current setting).
Voltages below typ. 0.16V are considered an open pin, age to detect open pins or short-to-GND errors, disa-
disabling the converter. bling the converter in case of detection. The under-
Additionally, these pins are monitored for under-volt-
In the range of 0.24V to 2.4V the signal is accepted as voltage threshold may be superseded by the VSM reset
reference for regulation, divided by a factor of 6. To use generation.
the internal reference voltage of typical 1.2V ( = 200mV Note that for SEPIC or Flyback topologies the output
at VFBH-FBL) solder this pin to V3V3.
must be precharged above the undervoltage threshold
at FBx to allow startup. For example the VSM regulator
The high side feedback FBH & FBL provides precise is suitable to drive the output via a rectification device
measurement of the load current (e.g. LED current). In or circuit.
5.6 Inner Current Regulation Loop
The Low side feedback CSxP and CSxN provides induc- DRVS should be supplied by VSM (see chapter supply
tor current measurement to the inner regulation loop for details). If DRVS is supplied externally, an maximum
to control the pulse width of the CGATE output. Over- average current of 40mA in each CGATE is possible. Take
Current protection is provided if the voltage at CSxP pin additional power generated in E522.3x into account.
exceeds 425mV relative to AGND, turning the accord- E522.3x device provide internal slope compensation
ing CGATE driver off. For over-current limitation please ramp generation. The slope can be scaled to match the
note , that the slope compensation may decrease the external circuitry by applying a resistor RSLP between
actual current limitation for higher dutycycles.
the innerloop shunt RSHUNT and pin CSxP.
CGATE output is designed to drive the gate of an exter- For applications designed to work with higher dutycy-
nal true-logic-level N-channel FET with an average gate cles than 50%, RSLP should be choosen in the range from
current of 25mA at switching frequencies up to 660kHz typ. 330Ω to 2kΩ. Final resistor value should be defined
(in OSCIN synchronized operational mode).
during prototyping of the complete application.
The average current can be calculated by multiplication As a starting value for RSLP in Boost configuration use
of the operation frequency with the total gate charge
V
OUT⋅RSHUNT
of the external FET. For example, for a transistor of
40nC gate-charge the maximum operational frequency
RSLP
=
5e−4⋅f RT⋅L
is 625kHz. Higher gate-charge leads to lower maximum with fRT = operating frequency set at RT
operational frequency (e.g. 100nC transistors are possi- and L = inductance in Boost circuitry
ble at a maximum frequency of 250kHz).
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
13/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
5.7 Outer Regulation Loop
The outer regulation loop provides control of the con- Under-voltage detection at FBL, FBH and CMP are pro-
verter in combination with the differential high-side vided to detect external failures like short-connections.
feedback amplifier at FBL and FBH. The failure amplifier A soft-start mechanism is implemented to avoid exces-
(named GM) provides the inner regulation loop refer- sive input current flow. The soft-start startup time is
ence voltage derived from CMP.
typically 7.5ms with PWDIM='1' to fully release convert-
er output power. A faster setting for softstart length
A typical compensation network required for optimized can be ordered, which leads to 3.75ms for a typical im-
operation is a network consisting of a capacitor to ref- plementation. The voltage slopes applied at CMP are ei-
erence GND, parallel to a serial connection of a capaci- ther typ. 200mV/ms (standard) or typ. 400mV/ms (fast).
tor and a resistor (see typical application diagram). Dur-
ing prototyping the compensation has to be verified for Note that dimming at PWDIMx during softstart stretches this
the whole input voltage range, especially for the maxi- delay (by approximately 1/dutycycle applied).
mum duty cycle which occurs.
5.8 Over-Voltage Protection
The OVP (over voltage protection) Pins OVPIN and OVPO If E522.3x is turned off or is dimmed, the connection
provide a GND related output over-voltage protection.
between OVPIN and OVPO is switched off, providing
high impedance to reduce current flow in over-voltage
The absolute voltage level of protection is defined by protection. This feature also disconnects the DC path
the resistive divider with respect to the maximum volt- between VIN and GND to save energy in sleep mode.
age at pin OVPIN, connected from converter output Note, that during PWDIM='0' the over-voltage protec-
voltage to OVPIN and from OVPO to AGND. Recom- tion is not available.
mended resistive range is given in ROVPO.
5.9 ERRB Output
ERRB open-drain output is used to set an error flag for
peripheral components, e.g. microcontroller.
The output drives the ERRB flag to AGND, if a failure is
detected. The following failure states are handled:
•
•
•
•
•
•
•
•
•
•
•
Open ADIM connection
Differential feedback FBH-FBL over-voltage 2)
PWDIM time-out (e.g. caused by short to GND)
Short in external dimming transistors 3)
VSM or V3V3 under-voltage (e.g. short to GND)
Junction over-temperature
•
•
•
•
•
•
•
Over-voltage at OVPIN
Open-load (detected by over-voltage protection)
Open feedback connection at FBH or FBL
Open current feedback at CSP
FBH or FBL under-voltage detection
Reversed feedback VFBH - VFBL < typ. -50mV
Continuous innerloop current limitation for typ.
>64ms 1)
Open AGND or PGND connection
DRVS under-voltage (below reset-threshold)
ON voltage low (ON logically'0')
Open RT input or out-of-range OSCIN signal
Invalid frequency applied to OSCIN
1) Error Flag is set for typ. 1s after detection, restarting the device afterwards.
2) Differential overvoltage at FBH/FBL is detected by CMP undervoltage detection to avoid sensitivity to distortions.
3) Differential voltage across FBH/FBL during dimming is supervised for a typ. threshold of 50mV after a delay of typ. 16µs fol-
lowing the falling edge of the PWDIM signal.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
14/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
Operation
with fRT
Operation
with fOSCIN
No Operation
ERRBx set
No Operation
ERRBx set
0
0
0
fOSCIN
fOSCIN
fOSCIN
fRT
fRT
Wobbling disabled for proper
OSCIN Detection
f
fRT
Figure 1. OSCIN Failure Check
5.10 Short Circuit Monitoring for floating LED Loads
The circuitry shown in (Figure 2) can be used to detect gy can be used to partially compensate the temperatur
LED chain short circuit in floating output topologies (e.g. dependent characteristic of the load. With the connec-
boost-to-battery). The resistors RSC1,2 are used to adapt tion to ERRB of E522.3x, the combined feedback signal
the threshold for short circuit detection to a threshold includes all failures detected by E522.3x together with
of VSC,DETECT=U(BE)*(1+RSC1/RSC2), with U(BE) being the the short circuit (or under-voltage) information of the
base-emitter voltage of the bipolar transistor devices. highside load. An additional capacitor parallel to RSC2
Choose RSC1 value sufficiently high to prevent unintend- may be useful to implement debouncing of the feed-
ed discharge of the converter output during dimming back signal or to increase of EMI of the circuit.
cycles. The negative thermal coefficient of this topolo-
Dimming
(if used)
RSC1
Feedback
Channel
(incl. Pull-up)
ERRB
RSC2
Figure 2. Exemplary shown circuit monitoring in Boost-to-Battery application
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
15/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
6 List of Abbreviations
Term
ASSP
IC
Explanation
Application Specific Standard Product
Integrated Circuit
OVP
OCP
GM
Over Voltage Protection
Over Current Protection
Transconductance
OSC
PWM
REF
LDO
CS
Oscillator
Pulse Width Modulation
Reference, usually given as I (current) or V (voltage)
Low Drop Out Voltage Regulator
Current Sense
FB
Feedback
SMPS
EMI
EME
EMC
Switched-Mode Power Supply
Electromagnetic Immunity
Electromagnetic Emission
Electromagnetic Compatibility
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
16/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
7 Package Information
All devices are available in a Pb free, RoHs compliant QFN32L5 plastic package according to JEDEC MO-220 K, vari-
ant VHHD-4. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020 with a
soldering peak temperature of (260+5)°C.
Description
Symbol
mm
typ
inch
typ
min
max
min
max
Package height
Stand off
A
A1
0.80
0.00
--
0.90
0.02
1.00
0.05
--
0.031
0.000
--
0.035
0.00079
0.0079 REF
0.010
0.039
0.002
--
Thickness of terminal leads, including lead finish
Width of terminal leads
A3
0.20 REF
0.25
b
0.18
--
0.30
--
0.007
--
0.012
--
Package length / width
5.00 BSC
3.65
D / E
0.197 BSC
0.144
3.80
--
0.138
--
0.150
--
Length / width of exposed pad
Lead pitch
D2 / E2 3.50
e
L
--
0.5 BSC
0.40
0.02 BSC
0.016
Length of terminal for soldering to substrate
Number of terminal positions
0.35
0.45
0.014
0.018
N
32
32
Note: the mm values are valid, the inch values contains rounding errors
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
17/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
8 Marking
8.1 Top Side
ÿ
ÿ
ÿ
Elmos (Logo)
52231A
XXUYWW
Signature
Explanation
52231
A
Y
WW
XXXX
U
Elmos project number
Elmos project revision code
Year of assembly (e.g. 2014)
Week of assembly
Production lot number (1 to 4 digits)
Assembler Code
9 Functional Safety
The development of this product is based on a process according to an ISO/TS 16949 certified quality management
system. Functional safety requirements according to ISO 26262 have not been submitted to Elmos and therefore
have not been considered for the development of this product.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
18/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
10 Record of Revision
Chapter
-
-
Revision
.00
.01
Change and Reason for Change
Initial revision
Page 1 -> new version with new ordering no. added
Date
Released Elmos
Mar 26, 2015 AMIL/ZOE
Jul 21, 2016 DHOE/ZOE
Page 9 -> Digital Dimming Logic -> Software param-
eter added
4
.01
Jul 21, 2016 DHOE/ZOE
5.7
9
.01
.01
Revised
Jul 21, 2016 DHOE/ZOE
Jul 21, 2016 DHOE/ZOE
New chapter with Functional Safety Hints
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
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Data Sheet
QM-No.: 25DS0085E.01
19/20
1 CHANNEL SWITCHED MODE CONSTANT CURRENT CONTROLLER
PRODUCTION DATA - JUL 21, 2016
E522.31/33
WARNING – Life Support Applications Policy
Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semicon-
ductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to
avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body
injury or damage to property. In the development of your design, please ensure that Elmos Semiconductor AG products are
used within specified operating ranges as set forth in the most recent product specifications.
General Disclaimer
Information furnished by Elmos Semiconductor AG is believed to be accurate and reliable. However, no responsibility is as-
sumed by Elmos Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Elmos Semiconductor
AG. Elmos Semiconductor AG reserves the right to make changes to this document or the products contained therein without
prior notice, to improve performance, reliability, or manufacturability.
Application Disclaimer
Circuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of
illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily
given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However,
no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semicon-
ductor devices described any license under the patent rights of Elmos Semiconductor AG or others.
Contact Information
Headquarters
Elmos Semiconductor AG
Heinrich-Hertz-Str. 1 • D-44227 Dortmund (Germany)
: +492317549100
: +12488653200
: sales-germany@elmos.com
: sales-usa@elmos.com
: www.elmos.com
Sales and Application Support Office North America
Elmos NA. Inc.
32255 Northwestern Highway • Suite 220 Farmington Hills
MI 48334 (USA)
Sales and Application Support Office China
Elmos Semiconductor Technology (Shanghai) Co., Ltd.
Unit 16B, 16F Zhao Feng World Trade Building,
No. 369 Jiang Su Road, Chang Ning District,
Shanghai, PR China, 200050
: +86216210 0908
: +82317141131
: sales-china@elmos.com
: sales-korea@elmos.com
Sales and Application Support Office Korea
Elmos Korea
B-1007, U-Space 2, #670 Daewangpangyo-ro,
Sampyoung-dong, Bunddang-gu, Sungnam-si
Kyounggi-do 463-400 Korea
Sales and Application Support Office Japan
Elmos Japan K.K.
BR Shibaura N Bldg. 7F
3-20-9 Shibaura, Minato-ku,
Tokyo 108-0023 Japan
: +81334517101
: +65 6908 1261
: sales-japan@elmos.com
Sales and Application Support Office Singapore
Elmos Semiconductor Singapore Pte Ltd.
3A International Business Park
#09-13 ICON@IBP • 609935 Singapore
: sales-singapore@elmos.com
© Elmos Semiconductor AG, 2016. Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited.
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet
QM-No.: 25DS0085E.01
20/20
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