E1922E20_技术文档

COVER

DATA SHEET

4G bits DDR3L SDRAM

EDJ4204EFBG (1024M words × 4 bits)

EDJ4208EFBG (512M words × 8 bits)

EDJ4216EFBG (256M words × 16 bits)

Specifications

Features

• Density: 4G bits

• Organization

• Double-data-rate architecture: two data transfers per

clock cycle

• The high-speed data transfer is realized by the 8 bits

prefetch pipelined architecture

• Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

— 128M words × 4 bits × 8 banks (EDJ4204EFBG)

— 64M words × 8 bits × 8 banks (EDJ4208EFBG)

— 32M words × 16 bits × 8 banks (EDJ4216EFBG)

• Package

— 78-ball FBGA (EDJ4204EFBG, EDJ4208EFBG)

— 96-ball FBGA (EDJ4216EFBG)

— Lead-free (RoHS compliant) and Halogen-free

• Power supply: 1.35V (typ)

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK transitions

— VDD = 1.283V to 1.45V

— Backward compatible for VDD, VDDQ

= 1.5V 0.075V

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Data mask (DM) for write data

• Data rate

— 1600Mbps/1333Mbps (max)

• 1KB page size

• Posted /CAS by programmable additive latency for

better command and data bus efficiency

• On-Die Termination (ODT) for better signal quality

— Synchronous ODT

— Row address: A0 to A15

— Column address: A0 to A9, A11 (EDJ4204EFBG)

A0 to A9 (EDJ4208EFBG)

— Dynamic ODT

— Asynchronous ODT

• Multi Purpose Register (MPR) for pre-defined pattern

read out

• 2KB page size (EDJ4216EFBG)

— Row address: A0 to A14

• ZQ calibration for DQ drive and ODT

• Programmable Partial Array Self-Refresh (PASR)

• /RESET pin for Power-up sequence and reset function

• SRT range:

— Normal/extended

• Programmable Output driver impedance control

— Column address: A0 to A9

• Eight internal banks for concurrent operation

• Burst length (BL): 8 and 4 with Burst Chop (BC)

• Burst type (BT):

— Sequential (8, 4 with BC)

— Interleave (8, 4 with BC)

• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11

• /CAS Write Latency (CWL): 5, 6, 7, 8

• Precharge: auto precharge option for each burst

access

• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)

• Refresh: auto-refresh, self-refresh

• Refresh cycles

— Average refresh period

7.8μs at 0°C ≤ TC ≤ +85°C

3.9μs at +85°C < TC ≤ +95°C

• Operating case temperature range

— TC = 0°C to +95°C

Document. No. E1922E20 (Ver. 2.0)

Date Published May 2013 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2012-2013

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Ordering Information

Die

revision

Organization

(words × bits)

Internal

banks

JEDEC speed bin

(CL-tRCD-tRP)

Part number

Package

EDJ4204EFBG-GN-F

EDJ4204EFBG-DJ-F

DDR3L-1600K (11-11-11)

DDR3L-1333H (9-9-9)

78-ball FBGA

F

1024M × 4

512M × 8

256M × 16

8

EDJ4208EFBG-GN-F

EDJ4208EFBG-DJ-F

DDR3L-1600K (11-11-11)

DDR3L-1333H (9-9-9)

78-ball FBGA

96-ball FBGA

EDJ4216EFBG-GN-F

EDJ4216EFBG-DJ-F

DDR3L-1600K (11-11-11)

DDR3L-1333H (9-9-9)

Note: 1. Please refer to the EDJ4204BFBG, EDJ4208BFBG, EDJ4216BFBG datasheet (E1923E) when using this device at 1.5V

operation, unless stated otherwise.

Part Number

E D J 42 04 E F BG - GN - F

Environment code

Elpida Memory

F: Lead Free (RoHS compliant)

and Halogen Free

Type

D: Packaged Device

Product Family

J: DDR3

Speed

GN: DDR3L-1600K (11-11-11)

DJ: DDR3L-1333H (9-9-9)

Density / Bank

42: 4Gb / 8-bank

Organization

04: x4

Package

BG: FBGA

08: x8

16: x16

Revision

Power Supply

E: 1.35V

Detailed Information

For detailed electrical specification and further information, please refer to the DDR3L SDRAM General Functionality

and Electrical Condition data sheet (E1927E).

Data Sheet E1922E20 (Ver. 2.0)

2

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Pin Configurations

Pin Configurations (×4/×8 configuration)

/xxx indicates active low signal.

78-ball FBGA (×4 configuration)

78-ball FBGA (×8 configuration)

1

2

3

7

8

9

1

2

3

7

8

9

A

B

A

B

VSS

VDD

NC

VSS

VDD

VSS

VDD

NC

NU/(/TDQS) VSS

VDD

VSS VSSQ DQ0

DM VSSQ VDDQ

VSS VSSQ DQ0

VDDQ

DM/TDQS VSSQ VDDQ

C

D

C

D

VDDQ

VSSQ

DQ2 DQS

NC /DQS

DQ1

VDD

NC

DQ3 VSSQ

VSSQ

NC VDDQ

NC

VDD CKE

DQ2 DQS

DQ1

VDD

DQ7

DQ3 VSSQ

VSSQ

VSS

VSSQ DQ6 /DQS

VSS

DQ5

E

F

G

H

J

E

F

G

H

J

DQ4

VREFDQ VDDQ NC

NC VSS /RAS

ODT VDD /CAS

VREFDQ VDDQ

VDDQ

NC

CK

/CK

VSS

NC

VSS /RAS

CK

/CK

VSS

ODT VDD /CAS

VDD CKE

A10(AP)

ZQ

NC

ZQ

NC

/CS

BA0

A3

/WE

BA2

A0

NC

/CS

/WE

VSS

VDD

VSS

VDD

VSS

VDD

BA0

A3

BA2

A0

A15 VREFCA VSS

K

L

K

L

A12(/BC) BA1

VDD

VSS

VDD

VSS

A12(/BC) BA1

VDD

VSS

VDD

VSS

A5

A2

A1

A4

A6

A8

VSS

VDD

VSS

A5

A7

A2

A9

A1

A4

A6

A8

M

N

M

N

A7

A9

A11

A14

A11

A14

/RESET A13

(Top view)

Pin name

Function

Pin name

Function

Address inputs

A0 to A15*³

A10(AP): Auto precharge

A12(/BC): Burst chop

/RESET*³

Active low asynchronous reset

BA0 to BA2*³

DQ0 to DQ7

DQS, /DQS

TDQS, /TDQS

/CS*³

Bank select

VDD

Supply voltage for internal circuit

Ground for internal circuit

Supply voltage for DQ circuit

Ground for DQ circuit

Data input/output

Differential data strobe

Termination data strobe

Chip select

VSS

VDDQ

VSSQ

VREFDQ

VREFCA

ZQ

NC*¹

NU*²

Reference voltage for DQ

Reference voltage for CA

Reference pin for ZQ calibration

No connection

/RAS, /CAS, /WE*³

CKE*³

Command input

Clock enable

CK, /CK

Differential clock input

Write data mask

ODT control

DM

ODT*³

Not usable

Notes: 1. Not internally connected with die.

2. Don't connect. Internally connected.

3. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.

Data Sheet E1922E20 (Ver. 2.0)

3

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Pin Configurations (× 16 configuration)

/xxx indicates active low signal.

96-ball FBGA

3

1

2

7

8

9

A

B

C

D

E

VDDQ DQU5 DQU7

VSSQ VDD VSS

DQU4 VDDQ VSS

/DQSU DQU6 VSSQ

DQSU DQU2 VDDQ

DQU0 VSSQ VDD

VDDQ

DQU3 DQU1

VSSQ VDDQ DMU

VSS VSSQ DQL0

DML VSSQ VDDQ

DQL1 DQL3 VSSQ

F

G

H

J

VDDQ DQL2 DQSL

VSSQ DQL6 /DQSL

VREFDQ VDDQ DQL4

VDD

VSS VSSQ

DQL7 DQL5 VDDQ

NC

VSS /RAS

CK

VSS

VDD

NC

CKE

NC

K

L

/CK

ODT VDD /CAS

NC

/CS

/WE

BA2

A10(AP) ZQ

M

N

P

R

T

VSS

BA0

NC VREFCA VSS

VDD

VSS

VDD

A3

A5

A7

A0

A2

A9

A12(/BC) BA1

VDD

VSS

VDD

VSS

A1

A4

A6

A8

A11

A14

VSS /RESET A13

(Top view)

Pin name

Function

Address inputs

Pin name

Function

A0 to A14*²

BA0 to BA2*²

A10(AP): Auto precharge

A12(/BC): Burst chop

/RESET*²

Active low asynchronous reset

Bank select

VDD

VSS

Supply voltage for internal circuit

Ground for internal circuit

DQU0 to DQU7

DQL0 to DQL7

Data input/output

DQSU, /DQSU

DQSL, /DQSL

Differential data strobe

VDDQ

Supply voltage for DQ circuit

/CS*²

/RAS, /CAS, /WE*²

CKE*²

Chip select

VSSQ

VREFDQ

VREFCA

ZQ

Ground for DQ circuit

Command input

Clock enable

Reference voltage for DQ

Reference voltage for CA

Reference pin for ZQ calibration

No connection

CK, /CK

Differential clock input

Write data mask

ODT control

DMU, DML

ODT*²

NC*¹

Notes: 1. Not internally connected with die.

2. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.

Data Sheet E1922E20 (Ver. 2.0)

4

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

CONTENTS

Specifications ........................................................................................................................................ 1

Features ................................................................................................................................................ 1

Ordering Information ............................................................................................................................. 2

Part Number .......................................................................................................................................... 2

Detailed Information .............................................................................................................................. 2

Pin Configurations ................................................................................................................................. 3

1. Electrical Conditions ...................................................................................................................... 6

1.1

1.2

1.3

1.4

Absolute Maximum Ratings ..............................................................................................................6

Operating Temperature Condition ....................................................................................................6

Recommended DC Operating Conditions ........................................................................................7

IDD and IDDQ Measurement Conditions ..........................................................................................8

2. Electrical Specifications ............................................................................................................... 19

2.1

2.2

2.3

DC Characteristics ..........................................................................................................................19

Pin Capacitance ..............................................................................................................................20

Standard Speed Bins ......................................................................................................................21

3. Package Drawing ......................................................................................................................... 25

3.1

3.2

78-ball FBGA ..................................................................................................................................25

96-ball FBGA ..................................................................................................................................26

4. Recommended Soldering Conditions .......................................................................................... 27

Data Sheet E1922E20 (Ver. 2.0)

5

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

1. Electrical Conditions

• All voltages are referenced to VSS (GND)

• Execute power-up and Initialization sequence before proper device operation is achieved.

1.1 Absolute Maximum Ratings

Table 1: Absolute Maximum Ratings

Parameter

Symbol

VDD

Rating

Unit

V

Notes

Power supply voltage

Power supply voltage for output

Input voltage

−0.4 to +1.975

−0.4 to 0.6 × VDD

−0.4 to 0.6 × VDDQ

−55 to +100

1.0

1, 3

1

VDDQ

VIN

V

Output voltage

VOUT

VREFCA

VREFDQ

Tstg

V

1

Reference voltage

Reference voltage for DQ

Storage temperature

Power dissipation

V

3

V

3

°C

W

mA

1, 2

1

PD

Short circuit output current

IOUT

50

1

Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. Storage temperature is the case surface temperature on the center/top side of the DRAM.

3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than 0.6 × VDDQ, When

VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.

Caution: Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

1.2 Operating Temperature Condition

Table 2: Operating Temperature Condition

Parameter

Symbol

Rating

Unit

Notes

Operating case temperature

TC

0 to +95

°C

1, 2, 3

Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During

operation, the DRAM case temperature must be maintained between 0°C to +85°C under all operating conditions.

3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C and +95°C case

temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:

a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9μs. (This double

refresh requirement may not apply for some devices.)

b) If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual

Self-Refresh mode with Extended Temperature Range capability (MR2 bit [A6, A7] = [0, 1]) or enable the optional Auto

Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).

Data Sheet E1922E20 (Ver. 2.0)

6

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

1.3 Recommended DC Operating Conditions

Table 3: Recommended DC Operating Conditions (TC = 0°C to +85°C), DDR3L Operation

Parameter

Symbol

VDD

min.

typ.

1.35

max.

1.45

Unit

V

Notes

Supply voltage

Supply voltage for DQ

1.283

1, 2, 3, 4

VDDQ

V

Notes: 1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t) over a very

long period of time (e.g. 1 sec).

2. If maximum limit is exceeded, input levels shall be governed by DDR3 specifications.

3. Under these supply voltages, the device operates to this DDR3L specifcation.

4. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while

5. VDD and VDDQ are changed for DDR3 operation shown as following timing wave form.

Table 4: Recommended DC Operating Conditions (TC = 0°C to +85°C), DDR3 Operation

Parameter

Symbol

VDD

min

typ

1.5

max

Unit

V

Notes

1, 2, 3

Supply voltage

Supply voltage for DQ

1.425

1.575

VDDQ

V

Notes: 1. If minimum limit is exceeded, input levels shall be governed by DDR3L specifications.

2. Under 1.5V operation, this DDR3L device operates to the DDR3 specifcations under the same speedtimings as defined

for this device.

3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is in reset while VDD and VDDQ

are changed for DDR3L operation shown as below.

Ta

Tb

Tc

Td

Te

Tf

Tg

Th

Ti

Tj

Tk

CK, /CK

tCKSRX

T(min) = 10ns

VDD, VDDQ (DDR3)

VDD, VDDQ (DDR3L)

T(min) = 10ns

T(min) = 200μs

T = 500μs

/RESET

CKE

tIS

T(min) = 10ns

Valid

tDLLK

ZQCL

tXPR

tMRD

tMOD

tZQinit

*1

tIS

*1

MRS

MR2

MRS

MR3

MRS

MR1

MRS

MR0

Valid

Command

BA

ODT

RTT

tIS

Valid

Static low in case RTT_Nore is enabled at time Tg, otherwise static high or low

: VIH or VIL

Note: 1. From time point Td until Tk, NOP or DES commands must be applied between MRS and ZQCL commands.

Figure 1: VDD/VDDQ Voltage Switch between DDR3L and DDR3

Data Sheet E1922E20 (Ver. 2.0)

7

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

1.4 IDD and IDDQ Measurement Conditions

In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined.

The figure Measurement Setup and Test Load for IDD and IDDQ Measurements shows the setup and test load for IDD

and IDDQ measurements.

• IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W,

IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all VDD balls of the DDR3

SDRAM under test tied together. Any IDDQ current is not included in IDD currents.

• IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of

the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.

Note:IDDQ values cannot be directly used to calculate I/O power of the DDR3 SDRAM. They can be used to support

correlation of simulated I/O power to actual I/O power as outlined in correlation from simulated channel I/O

power to actual channel I/O power supported by IDDQ measurement.

For IDD and IDDQ measurements, the following definitions apply:

• L and 0: VIN ≤ VIL(AC)max

• H and 1: VIN ≥ VIH(AC)min

• MID-LEVEL: defined as inputs are VREF = VDDQ / 2

• FLOATING: don't care or floating around VREF.

• Timings used for IDD and IDDQ measurement-loop patterns are provided in Timings used for IDD and IDDQ

Measurement-Loop Patterns table.

• Basic IDD and IDDQ measurement conditions are described in Basic IDD and IDDQ Measurement Conditions

table.

Note:The IDD and IDDQ measurement-loop patterns need to be executed at least one time before actual IDD or

IDDQ measurement is started.

• Detailed IDD and IDDQ measurement-loop patterns are described in IDD0 Measurement-Loop Pattern table

through IDD7 Measurement-Loop Pattern table.

• IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting.

RON = RZQ/7 (34Ω in MR1);

Qoff = 0B (Output Buffer enabled in MR1);

RTT_Nom = RZQ/6 (40Ω in MR1);

RTT_WR = RZQ/2 (120Ω in MR2);

TDQS Feature disabled in MR1

• Define D = {/CS, /RAS, /CAS, /WE} : = {H, L, L, L}

• Define /D = {/CS, /RAS, /CAS, /WE} : = {H, H, H, H}

Data Sheet E1922E20 (Ver. 2.0)

8

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

IDD

IDDQ

VDD

VDDQ

/RESET

CK, /CK

DDR3

SDRAM

RTT = 25Ω

DQS, /DQS,

DQ, DM,

CKE

VDDQ/2

/CS

TDQS, /TDQS

/RAS, /CAS, /WE

Address, BA

ODT

ZQ

VSSQ

VSS

Figure 2: Measurement Setup and Test Load for IDD and IDDQ Measurements

Application specific

memory channel

environment

IDDQ

Test load

Channel

I/O power

simulation

IDDQ

measurement

IDDQ

simulation

Correlation

Correction

Channel I/O power

number

Figure 3: Correlation from Simulated Channel I/O Power to Actual Channel I/O Power

Supported by IDDQ Measurement

Data Sheet E1922E20 (Ver. 2.0)

9

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

1.4.1

Timings Used for IDD and IDDQ Measurement-Loop Patterns

Table 5: Timings Used for IDD and IDDQ Measurement-Loop Patterns

DDR3-800

DDR3-1066

DDR3-1333

DDR3-1600

Parameter

CL

6-6-6

6

7-7-7

7

9-9-9

9

11-11-11

11

Unit

nCK

ns

tCK(min)

2.5

6

1.875

7

1.5

9

1.25

11

nRCD(min)

nRC(min)

nCK

21

15

6

27

20

7

33

24

9

39

nRAS(min)

nRP(min)

28

11

nFAW (1KB)

nFAW (2KB, 4KB)

nRRD (1KB)

nRRD (2KB, 4KB)

nRFC (1Gb)

nRFC (2Gb)

nRFC (4Gb)

16

20

4

20

27

4

20

30

4

24

32

5

4

6

5

6

44

64

104

59

86

139

74

107

174

88

128

208

Data Sheet E1922E20 (Ver. 2.0)

10

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

1.4.2

Basic IDD and IDDQ Measurement Conditions

Table 6: Basic IDD and IDDQ Measurement Conditions

Parameter

Symbol

Description

CKE: H; External clock: on; tCK, nRC, nRAS, CL: see Table 5; BL: 8*¹; AL: 0; /CS: H

between ACT and PRE; Command, address, bank address inputs: partially toggling

according to Table 7; Data I/O: MID-LEVEL; DM: stable at 0;

Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 7);

Output buffer and RTT: enabled in MR*²; ODT signal: stable at 0; Pattern details: see

Table 7

Operating one bank

active precharge

current

IDD0

CKE: H; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 5; BL: 8*^1,*⁶; AL:

0; /CS: H between ACT, RD and PRE; Command, address, bank address inputs, data

I/O: partially toggling according to Table 8;

Operating one bank

active-read-precharge

current

IDD1

DM: stable at 0; Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,...

(see Table 8); Output buffer and RTT: enabled in MR*²; ODT Signal: stable at 0;

Pattern details: see Table 8

CKE: H; External clock: on; tCK, CL: see Table 5 BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address Inputs: partially toggling according to Table 9;

data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer

and RTT: enabled in mode registers*²; ODT signal: stable at 0; pattern details: see

Table 9

Precharge standby

current

IDD2N

CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address Inputs: partially toggling according to Table 10;

data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer

and RTT: enabled in MR*²; ODT signal: toggling according to Table 10; pattern

details: see Table 10

Precharge standby

ODT current

IDD2NT

Precharge standby

ODT IDDQ current

Same definition like for IDD2NT, however measuring IDDQ current instead of IDD

current

CKE: L; External clock: on; tCK, CL: see Table 5; BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL; DM:

stable at 0; bank activity: all banks closed; output buffer and RTT: EMR*²; ODT

signal: stable at 0; precharge power down mode: slow exit*³

IDDQ2NT

IDD2P0

Precharge power-down

current slow exit

CKE: L; External clock: on; tCK, CL: see Table 6; BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;

DM:stable at 0; bank activity: all banks closed; output buffer and RTT: enabled in

MR*²; ODT signal: stable at 0; precharge power down mode: fast exit*³

CKE: H; External clock: On; tCK, CL: see Table 5; BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;

DM: stable at 0;bank activity: all banks closed; output buffer and RTT: enabled in

MR*²; ODT signal: stable at 0

Precharge power-down

current fast exit

IDD2P1

IDD2Q

Precharge quiet

standby current

CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address Inputs: partially toggling according to Table 9;

data I/O: MID-LEVEL; DM: stable at 0;

bank activity: all banks open; output buffer and RTT: enabled in MR*²;

ODT signal: stable at 0; pattern details: see Table 9

CKE: L; External clock: on; tCK, CL: see Table 5; BL: 8*¹; AL: 0; /CS: stable at 1;

Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL;

DM:stable at 0; bank activity: all banks open; output buffer and RTT:

enabled in MR*²; ODT signal: stable at 0

Active standby current

IDD3N

IDD3P

Active power-down

current

CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*^1,*⁶; AL: 0; /CS: H between

RD; Command, address, bank address Inputs: partially toggling according to

Table 11; data I/O: seamless read

Operating burst read

current

data burst with different data between one burst and the next one according to

Table 11; DM: stable at 0;

IDD4R

bank activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...

(see Table 11); Output buffer and RTT: enabled in MR*²; ODT signal: stable at 0;

pattern details: see Table 11

Operating burst read

IDDQ current

Same definition like for IDD4R, however measuring IDDQ current instead of IDD

current

IDDQ4R

Data Sheet E1922E20 (Ver. 2.0)

11

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 6: Basic IDD and IDDQ Measurement Conditions (cont’d)

Parameter

Symbol

Description

CKE: H; External clock: on; tCK, CL: see Table 5; BL: 8*¹; AL: 0; /CS: H between WR;

command, address, bank address inputs: partially toggling according to Table 12;

data I/O: seamless write data burst with different data between one burst and the next

one according to IDD4W Measurement-Loop Pattern table; DM: stable at 0; bank

activity: all banks open,

Operating burst write current IDD4W

WR commands cycling through banks: 0,0,1,1,2,2,.. (see Table 12); Output buffer

and RTT: enabled in MR*²; ODT signal: stable

at H; pattern details: see Table 12

CKE: H; External clock: on; tCK, CL, nRFC: see Table 5; BL: 8*¹; AL: 0; /CS: H

between REF;

Command, address, bank address Inputs: partially toggling according to Table 13;

data I/O: MID-LEVEL; DM: stable at 0;

Burst refresh current

IDD5B

IDD6

bank activity: REF command every nRFC (Table 13); output buffer and RTT: enabled

in MR*²; ODT signal: stable at 0; pattern

details: see Table 13

TC: 0 to 85°C; ASR: disabled*⁴; SRT:

Normal*⁵; CKE: L; External clock: off; CK and /CK: L; CL: see Table 5; BL: 8*¹;

AL: 0; /CS, command, address, bank address, data I/O: MID-LEVEL; DM: stable

at 0; bank activity: Self-refresh operation; output buffer and RTT: enabled in MR*²;

ODT signal: MID-LEVEL

Self-refresh current: normal

temperature range

TC: 0 to 95°C; ASR: Disabled*⁴; SRT: Extended*⁵; CKE: L; External clock: off; CK

and /CK: L; CL: Table 5; BL: 8*¹; AL: 0; /CS, command, address, bank address, data

I/O: MID-LEVEL;

Self-refresh current: extended

temperature range

IDD6ET

IDD6TC

DM: stable at 0; bank activity: Extended temperature self-refresh operation; output

buffer and RTT: enabled in MR*²; ODT signal: MID-LEVEL

TC: 0 to 95°C; ASR: Enabled*⁴; SRT: Normal*⁵; CKE: L; External clock: off;

CK and /CK: L; CL: Table 5; BL: 8*¹; AL: 0; /CS, command, address, bank address,

data I/O: MID-LEVEL; DM: stable at 0; bank activity: Auto self-refresh operation;

output buffer and RTT: enabled in MR*²; ODT signal: MID-LEVEL

Auto self-refresh current

(Optional)

CKE: H; External clock: on; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 5;

BL: 8*^1,*⁶; AL: CL-1; /CS: H between ACT and RDA; Command, address, bank

address Inputs: partially toggling according to Table 14; data I/O: read data bursts

with different data between one burst and the next one according to Table 14; DM:

stable at 0; bank activity: two times interleaved cycling through banks (0, 1, …7) with

different addressing, see Table 14; output buffer and RTT: enabled in MR*²; ODT

signal: stable at 0; pattern details: see Table 14

Operating bank interleave

read current

IDD7

IDD8

/RESET: low; External clock: off; CK and /CK: low; CKE: FLOATING; /CS, command,

address, bank address, Data IO: FLOATING; ODT signal: FLOATING

RESET low current reading is valid once power is stable and /RESET has been low

for at least 1ms.

RESET low current

Notes: 1. Burst Length: BL8 fixed by MRS: MR0 bits [1,0] = [0,0].

2. MR: Mode Register

Output buffer enable: set MR1 bit A12 = 1 and MR1 bits [5, 1] = [0,1];

RTT_Nom enable: set MR1 bits [9, 6, 2] = [0, 1, 1]; RTT_WR enable: set MR2 bits [10, 9] = [1,0].

3. Precharge power down mode: set MR0 bit A12= 0 for Slow Exit or MR0 bit A12 = 1 for fast exit.

4. Auto self-refresh (ASR): set MR2 bit A6 = 0 to disable or 1 to enable feature.

5. Self-refresh temperature range (SRT): set MR0 bit A7= 0 for normal or 1 for extended temperature range.

6. Read burst type: nibble sequential, set MR0 bit A3 = 0

Data Sheet E1922E20 (Ver. 2.0)

12

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 7: IDD0 Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7

A3

A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

ACT

D, D

/D, /D

0

1

0

1

0

1

0

1

0

1, 2

3, 4

…

Repeat pattern 1…4 until nRAS − 1, truncate if necessary

PRE

Repeat pattern 1...4 until nRC − 1, truncate if necessary

nRAS

…

0

1

0

1 × nRC

+ 0

ACT

D, D

/D, /D

0

1

0

1

0

1

0

1

0

F

0

1 × nRC

+1, 2

1 × nRC

+ 3, 4

Toggling Static H

…

Repeat pattern nRC + 1,...,4 until 1 × nRC + nRAS − 1, truncate if necessary

PRE

Repeat nRC + 1,...,4 until 2 × nRC − 1, truncate if necessary

1 × nRC

+ nRAS

0

1

0

F

0

…

1

2

3

4

5

6

7

2 × nRC Repeat Sub-Loop 0, use BA= 1 instead

4 × nRC Repeat Sub-Loop 0, use BA= 2 instead

6 × nRC Repeat Sub-Loop 0, use BA= 3 instead

8 × nRC Repeat Sub-Loop 0, use BA= 4 instead

10 × nRC Repeat Sub-Loop 0, use BA= 5 instead

12 × nRC Repeat Sub-Loop 0, use BA= 6 instead

14 × nRC Repeat Sub-Loop 0, use BA= 7 instead

Notes: 1. DM must be driven low all the time. DQS, /DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Data Sheet E1922E20 (Ver. 2.0)

13

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 8: IDD1 Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7 A3 A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

ACT

D, D

/D, /D

0

1

0

1

0

1

0

1

0

⎯

1, 2

3, 4

…

Repeat pattern 1...4 until nRCD − 1, truncate if necessary

RD

Repeat pattern 1...4 until nRAS − 1, truncate if necessary

PRE

Repeat pattern 1...4 until nRC − 1, truncate if necessary

nRCD

…

0

1

0

1

0

00000000

nRAS

…

0

1

0

⎯

1 × nRC

+ 0

ACT

D, D

/D, /D

0

1

0

1

0

1

0

1

0

F

0

⎯

0

1 × nRC

+ 1, 2

1 × nRC

+ 3, 4

Toggling Static H

…

Repeat pattern nRC + 1,..., 4 until nRC + nRCD − 1, truncate if necessary

RD

Repeat pattern nRC + 1,..., 4 until nRC +nRAS − 1, truncate if necessary

PRE

Repeat pattern nRC + 1,..., 4 until 2 × nRC − 1, truncate if necessary

1 × nRC

+ nRCD

0

1

0

1

0

F

0

00110011

…

1 × nRC

+ nRAS

0

1

0

F

⎯

…

1

2

3

4

5

6

7

2 × nRC Repeat Sub-Loop 0, use BA= 1 instead

4 × nRC Repeat Sub-Loop 0, use BA= 2 instead

6 × nRC Repeat Sub-Loop 0, use BA= 3 instead

8 × nRC Repeat Sub-Loop 0, use BA= 4 instead

10 × nRC Repeat Sub-Loop 0, use BA= 5 instead

12 × nRC Repeat Sub-Loop 0, use BA= 6 instead

14 × nRC Repeat Sub-Loop 0, use BA= 7 instead

Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.

2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Data Sheet E1922E20 (Ver. 2.0)

14

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 9: IDD2N and IDD3N Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7

A3

A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

D

1

0

1

0

1

0

1

0

F

0

1

D

0

1

2

/D

3

4 to 7

8 to 11

Repeat Sub-Loop 0, use BA= 1 instead

Repeat Sub-Loop 0, use BA= 2 instead

Toggling Static H 2

3

4

5

6

7

12 to 15 Repeat Sub-Loop 0, use BA= 3 instead

16 to 19 Repeat Sub-Loop 0, use BA= 4 instead

20 to 23 Repeat Sub-Loop 0, use BA= 5 instead

24 to 27 Repeat Sub-Loop 0, use BA= 6 instead

28 to 31 Repeat Sub-Loop 0, use BA= 7 instead

Notes: 1. DM must be driven low all the time. DQS, /DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Table 10: IDD2NT and IDDQ2NT Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7

A3

A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

D

1

0

1

0

1

0

1

0

F

0

1

D

0

2

/D

3

1

4 to 7

8 to 11

Repeat Sub-Loop 0, but ODT = 0 and BA= 1

Repeat Sub-Loop 0, but ODT = 1 and BA= 2

Toggling Static H 2

3

4

5

6

7

12 to 15 Repeat Sub-Loop 0, but ODT = 1 and BA= 3

16 to 19 Repeat Sub-Loop 0, but ODT = 0 and BA= 4

20 to 23 Repeat Sub-Loop 0, but ODT = 0 and BA= 5

24 to 27 Repeat Sub-Loop 0, but ODT = 1 and BA= 6

28 to 31 Repeat Sub-Loop 0, but ODT = 1 and BA= 7

Notes: 1. DM must be driven low all the time. DQS, /DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Data Sheet E1922E20 (Ver. 2.0)

15

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 11: IDD4R and IDDQ4R Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7 A3 A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

RD

D

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

F

0

00000000

1

⎯

2,3

/D, /D

RD

D

⎯

0

4

00110011

5

⎯

6,7

/D, /D

Toggling Static H 1

8 to 15

Repeat Sub-Loop 0, but BA= 1

2

3

4

5

6

7

16 to 23 Repeat Sub-Loop 0, but BA= 2

24 to 31 Repeat Sub-Loop 0, but BA= 3

32 to 39 Repeat Sub-Loop 0, but BA= 4

40 to 47 Repeat Sub-Loop 0, but BA= 5

48 to 55 Repeat Sub-Loop 0, but BA= 6

56 to 63 Repeat Sub-Loop 0, but BA= 7

Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.

2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Data Sheet E1922E20 (Ver. 2.0)

16

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 12: IDD4W Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7 A3 A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

WR

D

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

F

0

00000000

1

⎯

2,3

/D, /D

WR

D

⎯

0

4

00110011

5

⎯

6,7

/D, /D

Toggling Static H 1

8 to 15

Repeat Sub-Loop 0, but BA= 1

2

3

4

5

6

7

16 to 23 Repeat Sub-Loop 0, but BA= 2

24 to 31 Repeat Sub-Loop 0, but BA= 3

32 to 39 Repeat Sub-Loop 0, but BA= 4

40 to 47 Repeat Sub-Loop 0, but BA= 5

48 to 55 Repeat Sub-Loop 0, but BA= 6

56 to 63 Repeat Sub-Loop 0, but BA= 7

Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to write commands, otherwise MID-LEVEL.

2. Burst sequence driven on each DQ signal by write command. Outside burst operation, DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Table 13: IDD5B Measurement-Loop Pattern

CK,

/CK

Sub

Cycle

Com-

A11

A7 A3 A0

CKE

-Loop number mand /CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

REF

D

0

1

0

1

0

1

0

1

0

F

0

⎯

0

1, 2

3,4

/D, /D

5 to 8

9 to 12

Repeat cycles 1...4, but BA= 1

Repeat cycles 1...4, but BA= 2

13 to 16 Repeat cycles 1...4, but BA= 3

17 to 20 Repeat cycles 1...4, but BA= 4

21 to 24 Repeat cycles 1...4, but BA= 5

25 to 28 Repeat cycles 1...4, but BA= 6

29 to 32 Repeat cycles 1...4, but BA= 7

33 to

Toggling Static H

1

2

Repeat Sub-Loop 1, until nRFC − 1. Truncate, if necessary.

nRFC − 1

Notes: 1. DM must be driven low all the time. DQS, /DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Data Sheet E1922E20 (Ver. 2.0)

17

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 14: IDD7 Measurement-Loop Pattern

CK,

/CK

Sub

-Loop number

Cycle

Com-

mand

A11

A7 A3 A0

CKE

/CS /RAS /CAS /WE ODT BA*³-Am A10 -A9 -A6 -A2 Data*²

0

ACT

RDA

D

0

1

0

1

0

1

0

1

0

1

0

⎯

1

00000000

0

2

⎯

…

Repeat above D Command until nRRD − 1

nRRD

ACT

0

1

0

1

0

1

0

1

0

1

0

1

0

F

0

⎯

nRRD + 1 RDA

00110011

1

nRRD + 2

…

D

⎯

Repeat above D Command until 2 × nRRD − 1

2

3

2 × nRRD Repeat Sub-Loop 0, but BA= 2

3 × nRRD Repeat Sub-Loop 1, but BA= 3

D

1

0

3

0

F

0

⎯

4

5

6

4 × nRRD

Assert and repeat above D Command until nFAW − 1, if necessary

Repeat Sub-Loop 0, but BA= 4

nFAW

Repeat Sub-Loop 1, but BA= 5

Repeat Sub-Loop 0, but BA= 6

Repeat Sub-Loop 1, but BA= 7

+ nRRD

nFAW

7

8

9

+ 2 × nRRD

nFAW

+ 3 × nRRD

D

1

0

7

0

F

0

⎯

nFAW

+ 4 × nRRD

Assert and repeat above D Command until 2 × nFAW − 1, if necessary

2 × nFAW

+ 0

ACT

0

1

0

F

2 × nFAW

+ 1

Toggling Static H

RDA

D

0

1

0

1

0

1

0

F

0

00110011

10

11

⎯

2 × nFAW

+ 2

Repeat above D Command until 2 × nFAW + nRRD − 1

2 × nFAW

+ nRRD

ACT

0

1

0

1

0

⎯

2 × nFAW

+ nRRD + 1

RDA

D

0

1

0

1

0

1

0

1

0

00000000

⎯

2 × nFAW

+ nRRD + 2

Repeat above D Command until 2 × nFAW + 2 × nRRD − 1

2 × nFAW

+2 × nRRD

2 × nFAW

+ 3 × nRRD

12

13

Repeat Sub-Loop 10, but BA= 2

Repeat Sub-Loop 11, but BA= 3

D

1

0

3

0

⎯

2 × nFAW

+ 4 × nRRD

14

15

16

Assert and repeat above D Command until 3 × nFAW − 1, if necessary

3 × nFAW Repeat Sub-Loop 10, but BA= 4

3 × nFAW

Repeat Sub-Loop 11, but BA= 5

+nRRD

3 × nFAW

17

18

19

Repeat Sub-Loop 10, but BA= 6

+ 2 × nRRD

3 × nFAW

Repeat Sub-Loop 11, but BA= 7

+ 3 × nRRD

D

1

0

7

0

⎯

3 × nFAW

+ 4 × nRRD

Assert and repeat above D Command until 4 × nFAW − 1, if necessary

Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.

2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.

3. BA: BA0 to BA2.

4. Am: m means Most Significant Bit (MSB) of Row address.

Data Sheet E1922E20 (Ver. 2.0)

18

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

2. Electrical Specifications

2.1 DC Characteristics

Table 15: DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)

Data rate × 4

× 8

× 16

Parameter

Symbol

(Mbps)

max

Unit

Notes

1333

1600

40

45

40

45

50

55

Operating current

(ACT-PRE)

IDD0

mA

1333

1600

55

60

55

60

70

75

Operating current

(ACT-RD-PRE)

IDD1

mA

1333

1600

17

18

17

18

17

18

IDD2P1

IDD2P0

Fast PD Exit

Slow PD Exit

Precharge power-down

standby current

1333

1600

12

1333

1600

25

Precharge standby current IDD2N

1333

1600

30

Precharge standby

IDD2NT

ODT current

1333

1600

25

Precharge quiet standby

IDD2Q

current

1333

1600

20

22

Active power-down current

IDD3P

(Always fast exit)

1333

1600

30

32

Active standby current

IDD3N

IDD4R

IDD4W

IDD5B

1333

1600

80

90

120

135

Operating current

(Burst read operating)

100

1333

1600

85

95

135

150

Operating current

(Burst write operating)

105

1333

1600

160

Burst refresh current

1333

1600

145

150

145

150

175

195

All bank interleave read

current

IDD7

IDD8

mA

RESET low current

12

Table 16: Self-Refresh Current (TC = 0°C to +85°C, VDD, VDDQ = 1.283V to 1.45V)

Parameter

Symbol

max

Unit

Notes

Self-refresh current

normal temperature range

IDD6

12

mA

Self-refresh current

extended temperature range

IDD6ET

IDD6TC

17

mA

Auto self-refresh current

(Optional)

⎯

Data Sheet E1922E20 (Ver. 2.0)

19

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

2.2 Pin Capacitance

Table 17: Pin Capacitance [DDR3-800 to 1600] (TC = 25°C, VDD, VDDQ = 1.283V to 1.45V)

DDR3L-800

DDR3L-1066

DDR3L-1333

DDR3L-1600

Parameter

Symbol

Min

Max

Min

Max

Min

Max

Min

Max

Units Notes

Input/outputcapacitance CIO

1.4

2.5

1.4

2.5

1.4

2.3

1.4

2.2

pF

1, 2

2

Input capacitance,

CCK

0.8

0

1.6

0.8

0

1.6

0.8

0

1.4

0.8

0

1.4

CK and /CK

Input capacitance delta,

CK and /CK

CDCK

0.15

2, 3

Input/outputcapacitance

delta,

DQS and /DQS

CDDQS

CI

0

0.2

1.3

0

0.2

1.3

0

0.15

1.3

0

0.15

1.2

pF

2, 4

2, 5

Input capacitance,

(control, address,

command, input-only

pins)

0.75

Input capacitance delta,

(All control input-only

pins)

CDI_CTRL −0.5

0.3

0.5

−0.5

0.3

0.5

−0.4

0.2

0.4

−0.4

0.2

0.4

pF

2, 6, 7

2, 8, 9

Input capacitance delta,

(All addres/command

input-only pins)

CDI_ADD_

−0.5

CMD

Input/outputcapacitance

delta, DQ,DM, DQS,

/DQS, TDQS, /TDQS

CDIO

−0.5

0.3

3

−0.5

0.3

3

−0.5

0.3

3

−0.5

0.3

3

pF

2, 10

2, 11

Input/outputcapacitance

of ZQ pin

CZQ

⎯

Notes: 1. Although the DM, TDQS and /TDQS pins have different functions, the loading matches DQ and DQS.

2. VDD, VDDQ, VSS, VSSQ applied and all other pins floating (except the pin under test, CKE, /RESET and ODT as

necessary). VDD = VDDQ = 1.35V, VBIAS=VDD/2 and ondie termination off.

3. Absolute value of CCK-C/CK.

4. Absolute value of CIO(DQS)-CIO(/DQS).

5. CI applies to ODT, /CS, CKE, A0-A15, BA0-BA2, /RAS, /CAS and /WE.

6. CDI_CTRL applies to ODT, /CS and CKE.

7. CDI_CTRL = CI(CTRL) − 0.5 × (CI(CK)+CI(/CK)).

8. CDI_ADD_CMD applies to A0-A15, BA0-BA2, /RAS, /CAS and /WE.

9. CDI_ADD_CMD = CI(ADD_CMD) − 0.5 × (CI(CK)+CI(/CK)).

10. CDIO=CIO(DQ,DM) − 0.5 × (CIO(DQS)+CIO(/DQS)).

11. Maximum external load capacitance on ZQ pin: 5pF.

Data Sheet E1922E20 (Ver. 2.0)

20

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

2.3 Standard Speed Bins

Table 18: DDR3-800 Speed Bins

Speed Bin

DDR3-800E

6-6-6

CL-tRCD-tRP

Symbol

/CAS write latency

min

15

max

20

Unit

ns

Notes

tAA

9

tRCD

15

⎯

ns

9

tRP

15

⎯

ns

9

tRC

52.5

37.5

3.0

2.5

⎯

ns

9

tRAS

9 × tREFI

3.3

ns

8

tCK(avg) @CL=5

tCK(avg) @CL=6

Supported CL settings

Supported CWL settings

CWL = 5

ns

1, 2, 3, 10

3.3

ns

5, 6

nCK

5

Table 19: DDR3-1066 Speed Bins

Speed Bin

DDR3-1066F

7-7-7

CL-tRCD-tRP

Symbol

/CAS write latency

min

max

Unit

ns

Notes

tAA

13.125

50.625

37.5

20

9

tRCD

⎯

ns

9

tRP

⎯

ns

9

tRC

⎯

ns

9

tRAS

9 × tREFI

3.3

ns

8

tCK(avg) @CL=5

CWL = 5

CWL = 6

CWL = 5

CWL = 6

CWL = 5

CWL = 6

CWL = 5

CWL = 6

3.0

ns

1, 2, 3, 4, 5, 10

Reserved

2.5

Reserved

3.3

ns

4

tCK(avg) @CL=6

tCK(avg) @CL=7

tCK(avg) @CL=8

ns

1, 2, 3, 5

Reserved

1.875

Reserved

< 2.5

ns

4

ns

4

ns

1, 2, 3, 4

4

Reserved

1.875

Reserved

< 2.5

ns

1, 2, 3

Supported CL settings

Supported CWL settings

5, 6, 7, 8

5, 6

nCK

Data Sheet E1922E20 (Ver. 2.0)

21

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 20: DDR3-1333 Speed Bins

Speed Bin

DDR3-1333H

9-9-9

CL-tRCD-tRP

Symbol

/CAS write latency

min

max

Unit

Notes

13.5

tAA

20

ns

9

(13.125)

13.5

tRCD

tRP

⎯

ns

9

(13.125)

13.5

(13.125)

49.5

tRC

(49.125)

tRAS

36

9 × tREFI

3.3

ns

nCK

8

tCK(avg) @CL=5

CWL = 5

CWL = 6, 7

CWL = 5

CWL = 6

CWL = 7

CWL = 5

CWL = 6

CWL = 7

CWL = 5

CWL = 6

CWL = 7

CWL = 5, 6

CWL= 7

3.0

1, 2, 3, 4, 6, 10

Reserved

2.5

Reserved

3.3

4

tCK(avg) @CL=6

tCK(avg) @CL=7

tCK(avg) @CL=8

1, 2, 3, 6

Reserved

1.875

Reserved

< 2.5

4

1, 2, 3, 4, 6

Reserved

1.875

Reserved

< 2.5

4

1, 2, 3, 6

Reserved

1.5

Reserved

< 1.875

Reserved

< 1.875

4

tCK(avg) @CL=9

tCK(avg) @CL=10

4

1, 2, 3, 4

4

CWL = 5, 6

CWL= 7

Reserved

1.5

1, 2, 3

Supported CL settings

Supported CWL settings

5, 6, 7, 8, 9, 10

5, 6, 7

Data Sheet E1922E20 (Ver. 2.0)

22

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Table 21: DDR3-1600 Speed Bins

Speed Bin

DDR3-1600K

11-11-11

CL-tRCD-tRP

Symbol

/CAS write latency

min

max

Unit

Notes

13.75

tAA

20

ns

9

(13.125)

13.75

tRCD

tRP

⎯

ns

9

(13.125)

13.75

(13.125)

48.75

tRC

(48.125)

tRAS

35

9 × tREFI

3.3

ns

nCK

8

tCK(avg) @CL=5

CWL = 5

CWL = 6, 7, 8

CWL = 5

CWL = 6

CWL = 7, 8

CWL = 5

CWL = 6

CWL = 7

CWL = 8

CWL = 5

CWL = 6

CWL = 7

CWL = 8

CWL = 5, 6

CWL= 7

3.0

1, 2, 3, 4, 7, 10

Reserved

2.5

Reserved

3.3

4

tCK(avg) @CL=6

tCK(avg) @CL=7

1, 2, 3, 7

Reserved

1.875

Reserved

< 2.5

4

1, 2, 3, 4, 7

Reserved

1.875

Reserved

< 2.5

4

tCK(avg) @CL=8

4

1, 2, 3, 7

Reserved

1.5

Reserved

< 1.875

4

tCK(avg) @CL=9

tCK(avg) @CL=10

tCK(avg) @CL=11

4

1, 2, 3, 4, 7

CWL= 8

Reserved

1.5

Reserved

< 1.875

4

CWL = 5, 6

CWL= 7

4

1, 2, 3, 7

CWL= 8

Reserved

1.25

Reserved

< 1.5

4

CWL = 5, 6, 7

CWL= 8

4

1, 2, 3

Supported CL settings

Supported CWL settings

5, 6, 7, 8, 9, 10, 11

5, 6, 7, 8

Data Sheet E1922E20 (Ver. 2.0)

23

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

Notes: 1. The CL setting and CWL setting result in tCK(avg)min and tCK(avg)max requirements. When making a selection of

tCK(avg), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting.

2. tCK(avg)min limits: Since /CAS latency is not purely analog - data and strobe output are synchronized by the DLL - all

possible intermediate frequencies may not be guaranteed. An application should use the next smaller JEDEC standard

tCK(avg) value (3.0, 2.5, 1.875, 1.5, or 1.25ns) when calculating CL(nCK) = tAA(ns) / tCK(avg)(ns), rounding up to the

next ‘Supported CL’.

3. tCK(avg)max limits: Calculate tCK(avg) + tAA(max)/CL selected and round the resulting tCK(avg) down to the next valid

speed bin (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK(avg)max corresponding to CL selected.

4. Reserved’ settings are not allowed. User must program a different value.

5. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1066

Speed Bins which are not subject to production tests but verified by design/characterization.

6. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1333

Speed Bins which is not subject to production tests but verified by design/characterization.

7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1600

Speed Bins which is not subject to production tests but verified by design/characterization.

8. tREFI depends on operating case temperature (TC).

9. For devices supporting optional down binning to CL = 7 and CL = 9, tAA/tRCD/tRP(min) must be 13.125 ns or lower. SPD

settings must be programmed to match.

10. DDR3-800 AC timing apply if DRAM operates at lower than 800 MT/s data rate.

Data Sheet E1922E20 (Ver. 2.0)

24

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

3. Package Drawing

3.1 78-ball FBGA

Solder ball: Lead free (Sn-Ag-Cu)

Unit: mm

9.0  0.1

0.20 S B

INDEX MARK

0.20 S A

0.20 S

1.20 max.

S

0.35 0.05

0.10 S

M S A B

0.15

B

78-0.45 0.05

A

INDEX MARK

1.6 0.8

6.4

ECA-TS2-0421-01

Data Sheet E1922E20 (Ver. 2.0)

25

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

3.2 96-ball FBGA

Solder ball: Lead free (Sn-Ag-Cu)

Unit: mm

9.0  0.1

0.20 S B

INDEX MARK

0.20 S A

0.20 S

1.20 max.

S

0.35  0.05

0.10 S

B

M S A B

0.15

96-0.45  0.05

A

INDEX MARK

1.6 0.8

6.4

ECA-TS2-0422-01

Data Sheet E1922E20 (Ver. 2.0)

26

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

4. Recommended Soldering Conditions

Please consult with our sales offices for soldering conditions of the 4G bits DDR3 SDRAM.

Type of Surface Mount Device

EDJ4204EFBG, EDJ4208EFBG: 78-ball FBGA < Lead free (Sn-Ag-Cu) >

EDJ4216EFBG: 96-ball FBGA < Lead free (Sn-Ag-Cu) >

Data Sheet E1922E20 (Ver. 2.0)

27

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

NOTES FOR CMOS DEVICES

1

PRECAUTION AGAINST ESD FOR MOS DEVICES

Exposing the MOS devices to a strong electric field can cause destruction of the gate

oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop

generation of static electricity as much as possible, and quickly dissipate it, when once

it has occurred. Environmental control must be adequate. When it is dry, humidifier

should be used. It is recommended to avoid using insulators that easily build static

electricity. MOS devices must be stored and transported in an anti-static container,

static shielding bag or conductive material. All test and measurement tools including

work bench and floor should be grounded. The operator should be grounded using

wrist strap. MOS devices must not be touched with bare hands. Similar precautions

need to be taken for PW boards with semiconductor MOS devices on it.

2

HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES

No connection for CMOS devices input pins can be a cause of malfunction. If no

connection is provided to the input pins, it is possible that an internal input level may be

generated due to noise, etc., hence causing malfunction. CMOS devices behave

differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected

to V^DDor GND with a resistor, if it is considered to have a possibility of being an output

pin. The unused pins must be handled in accordance with the related specifications.

3

STATUS BEFORE INITIALIZATION OF MOS DEVICES

Power-on does not necessarily define initial status of MOS devices. Production process

of MOS does not define the initial operation status of the device. Immediately after the

power source is turned ON, the MOS devices with reset function have not yet been

initialized. Hence, power-on does not guarantee output pin levels, I/O settings or

contents of registers. MOS devices are not initialized until the reset signal is received.

Reset operation must be executed immediately after power-on for MOS devices having

reset function.

CME0107

Data Sheet E1922E20 (Ver. 2.0)

28

EDJ4204EFBG, EDJ4208EFBG, EDJ4216EFBG

The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.

No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of Elpida Memory, Inc.

Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights

(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or

third parties by or arising from the use of the products or information listed in this document. No license,

express, implied or otherwise, is granted under any patents, copyrights or other intellectual property

rights of Elpida Memory, Inc. or others.

Descriptions of circuits, software and other related information in this document are provided for

illustrative purposes in semiconductor product operation and application examples. The incorporation of

these circuits, software and information in the design of the customer's equipment shall be done under

the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses

incurred by customers or third parties arising from the use of these circuits, software and information.

[Product applications]

Be aware that this product is for use in typical electronic equipment for general-purpose applications.

Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.

However, this product is not intended for use in the product in aerospace, aeronautics, nuclear power,

combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other

such application in which especially high quality and reliability is demanded or where its failure or

malfunction may directly threaten human life or cause risk of bodily injury. Customers are instructed to

contact Elpida Memory's sales office before using this product for such applications.

[Product usage]

Design your application so that the product is used within the ranges and conditions guaranteed by

Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation

characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no

responsibility for failure or damage when the product is used beyond the guaranteed ranges and

conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure

rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so

that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other

consequential damage due to the operation of the Elpida Memory, Inc. product.

[Usage environment]

Usage in environments with special characteristics as listed below was not considered in the design.

Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in

environments with the special characteristics listed below.

Example:

1) Usage in liquids, including water, oils, chemicals and organic solvents.

2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.

3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL₂, H₂S, NH₃,

SO₂, and NO .

x

4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.

5) Usage in places where dew forms.

6) Usage in environments with mechanical vibration, impact, or stress.

7) Usage near heating elements, igniters, or flammable items.

If you export the products or technology described in this document that are controlled by the Foreign

Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance

with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by

U.S. export control regulations, or another country's export control laws or regulations, you must follow

the necessary procedures in accordance with such laws or regulations.

If these products/technology are sold, leased, or transferred to a third party, or a third party is granted

license to use these products, that third party must be made aware that they are responsible for

compliance with the relevant laws and regulations.

M01E1007

Data Sheet E1922E20 (Ver. 2.0)

29


型号：	E1922E20
厂家：	ELPIDA MEMORY
描述：	4G bits DDR3L SDRAM 4G位DDR3L SDRAM 动态存储器双倍数据速率
文件：	总29页 (文件大小：426K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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