EDL1216BASA-75-E [ELPIDA]
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54;
| 型号： | EDL1216BASA-75-E |
| 厂家： | 
ELPIDA MEMORY |
| 描述： | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54 时钟 动态存储器 内存集成电路 |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Mobile RAM
http://www.elpida.com
Description
Elpida Memory has unveiled a new family of synchronous DRAM, “Mobile RAM”.
Mobile RAM achieves low power consumption via three special low power functions, and extends the battery
life in mobile applications. Additional advantages of Mobile RAM are that it saves space in the system by the
adoption of a 54-ball FBGA (Fine-pitch Ball Grid Array) package, and that it offers a high-speed data transfer
rate using pipeline architecture.
Mobile RAM contributes to a better environment by adopting lead-free solder balls.
Suitable Applications
Pin Configuration (54-ball FBGA)
Top View
• Mobile cellular handset
• PDA, wireless PDA
• Handheld PC
1
2
3
4
5
6
7
8
9
A0 to A11
BA0, BA1
: Address inputs
: Bank select
A
B
C
D
E
F
VSS DQ15 VSSQ
DQ14 DQ13 VDDQ
DQ12 DQ11 VSSQ
DQ10 DQ9 VDDQ
VDDQ DQ0 VDD
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
VSSQ DQ6 DQ5
VDD LDQM DQ7
/CAS /RAS /WE
BA0 BA1 /CS
DQ0 to DQ15 : Data inputs/outputs
CLK
: Clock input
CKE
: Clock enable
• Digital still camera
• Digital camcorder
and more…
/CS
: Chip select
/RAS
/CAS
/WE
: Row address strobe
: Column address strobe
: Write enable
DQ8 NC
VSS
UDQM
LDQM
VDD
VSS
: Upper DQ mask enable
: Lower DQ mask enable
: Supply voltage
: Ground
UDQM CLK CKE
G
H
J
NC
A8
A11
A7
A9
A6
A4
VDDQ
VSSQ
NC
: Supply voltage for DQ
: Ground for DQ
: No connect
A0
A3
A1
A10
VSS
A5
A2 VDD
8.0mm
Product Lineup and Production Status
Self
Refresh
Current
Supply
Voltage
for DQ
(V)
Maximum
Clock
Frequency
(MHz)
Supply
Voltage
(V)
Density
(bits) (words × bits × banks)
Organization
Sample
Status
Part Number
(µA (MAX.))
2.5 ± 0.2
2.5 ± 0.2
1.8 ± 0.15
1.8 ± 0.15
2.5 ± 0.2
1.8 ± 0.15
133
133
100
EDL1216AASA-75-E
EDL1216BASA-75-E
EDL1216CASA-75-E
Now
128M
2M × 16 × 4
350
available
Document No. E0188E40 (Ver.4.0)
Date Published June 2002 (K) Japan
© Elpida Memory, Inc. 2001-2002
Features
1. Low Power-Supply Voltage:
Mobile RAM
2.5V ± 0.2V
1.8V ± 0.15V 2.5V ± 0.2V
Standard SDRAM
Supply Voltage (VDD)
1.8V ± 0.15V
1.8V ± 0.15V
3.3V
3.3V
Input/output Voltage (VDDQ)
2. Low Power Operation:
2-1. Normal self refresh current
Mobile RAM
350µA
Standard SDRAM
2,000µA
Self Refresh Current (IDD6) (MAX.)
2-2. Mobile RAM-specific function for low power consumption
• Partial Array Self Refresh:
Refreshes only a certain portion of the memory cell array to reduce the self-refresh current.
• Temperature Compensated Self Refresh:
Adjusts the refresh frequency in response to changes in temperature to reduce the self-refresh current.
• Deep Power Down:
Cuts internal voltage supply to achieve maximum power reduction.
3. High-Speed Operation:
• 100MHz at CAS Latency 3 (CL = 3) (VDD = 1.8V)
• 133MHz at CAS Latency 3 (CL = 3) (VDD = 2.5V)
4. Wide Temperature Range:
Mobile RAM
-25 to +85 °C
Standard SDRAM
0 to 70 °C
Operating Temperature
5. Organization: 16-bit organization
6. Small Package:
54-ball FBGA (Fine-pitch Ball Grid Array) 8.0mm × 8.0mm × 1.0mm, 0.8mm ball pitch
7. Lead Free (Su − Ag − Cu)
8. Fully compatible with JEDEC Low Power SDRAM
Document No. E0188E40 (Ver.4.0)
The information in this document is subject to change without notice.
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