EDR2518ABSE-AEP-E [ELPIDA]
288M bits Direct Rambus DRAM; 288M位直接Rambus的DRAM
| 型号： | EDR2518ABSE-AEP-E |
| 厂家： | 
ELPIDA MEMORY |
| 描述： | 288M bits Direct Rambus DRAM |
| 文件： | 总79页 (文件大小：1101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
288M bits Direct Rambus DRAM
EDR2518ABSE (512K words × 18 bits × 32s banks)
Description
Features
The EDR2518AB (Direct RDRAM ) is a general
purpose high-performance memory device suitable for
use in a broad range of applications including
computer memory, graphics, video, and any other
application where high bandwidth and low latency are
required.
• Highest sustained bandwidth per DRAM device
— 2.1 GB/s sustained data transfer rate
— Separate control and data buses for maximized
efficiency
— Separate row and column control buses for easy
scheduling and highest performance
The EDR2518AB is 1066MHz 288Mbits Direct Rambus
— 32 banks: four transactions can take place
DRAM (RDRAM ), organized as 16M words by 18 bits.
simultaneously at full bandwidth data rates
The use of Rambus Signaling Level (RSL) technology
permits 800MHz to 1066MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data
transfers at 0.9375ns per two bytes (7.5ns per sixteen
bytes).
• Low latency features
— Write buffer to reduce read latency
— 3 precharge mechanisms for controller flexibility
— Interleaved transactions
• Advanced power management:
— Multiple low power states allows flexibility in power
The architecture of the Direct RDRAM devices allows
the highest sustained bandwidth for multiple,
simultaneous randomly addressed memory
transactions.
consumption versus time to active state
— Power-down self-refresh
• Organization: 2K bytes pages and 32 banks, x 18
• Uses Rambus Signaling Level (RSL) for up to
The separate control and data buses with independent
row and column control yield over 95% bus efficiency.
The Direct RDRAM devices 32 banks support up to
four simultaneous transactions.
1066MHz operation
• FBGA (µBGA ) package is Sn-Pb or lead free
solder (Sn-Ag-Cu)
System oriented features for mobile, graphics and
large memory systems include power management,
byte masking.
It is offered in a CSP horizontal package suitable for
desktop as well as low-profile add-in card and mobile
applications. Direct RDRAM devices operate from a
2.5V supply.
Document No. E0260E40 (Ver. 4.0)
Date Published April 2003 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002-2003
EDR2518ABSE
Ordering Information
Organization*
words × bits × Internal
Banks
Clock frequency
MHz (max.)
1066
1066
1066
800
/RAS access
time (ns)
Part number
Package
80-ball FBGA (µBGA)
EDR2518ABSE-AEP
EDR2518ABSE-AE
EDR2518ABSE-AD
EDR2518ABSE-8C
512K x 18 x 32s
32 (-32P)
32 (-32)
35
40
EDR2518ABSE-AEP-E
EDR2518ABSE-AE-E
EDR2518ABSE-AD-E
EDR2518ABSE-8C-E
1066
1066
1066
800
32 (-32P)
32 (-32)
35
40
Note: The “32s” designation indicates that this RDRAM core is composed of 32 banks which use a “split” bank
architecture
Part Number
E D R 25 18 A B SE - AEP - E
Elpida Memory
Type
D: Monolithic Device
Environment Code
Blank: Sn-Pb Solder
E: Lead Free
Product Code
R: RDRAM
Speed
AEP: 1066MHz
Density & Bit Organization
2518: 288M (x18 bit)
Package
SE: FBGA
(tRAC= 32ns,
tDAC= 3clocks)
(µBGA with back cover)
AE: 1066MHz
(tRAC= 32ns)
AD: 1066MHz
Voltage, Interface
A: 2.5V, RSL
Die Rev.
(tRAC= 35ns)
8C: 800MHz
(tRAC= 40ns)
2
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Pin Configuration
80-ball FBGA (µBGA)
Top View
10
9
8
7
6
5
4
3
2
1
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
T
U
VDD
VDD
GND
CMD
GND
10
9
VDD
VDD
VDD
VDD
VDD
VDD
VDD
GND VCMOS
GND
GND GNDa GNDa
GND
GND
GND
GND
8
VDD
VDD
DQA8 DQA7 DQA5 DQA3 DQA1 CTMN CTM ROW2 ROW0 COL3 COL1 DQB1 DQB3 DQB5 DQB7 DQB8
7
6
5
GND
GND DQA6 DQA4 DQA2 DQA0
CFM CFMN ROW1 COL4 COL2 COL0 DQB0 DQB2 DQB4 DQB6 GND
GND
4
VDD
VDD
VDDa
VDD
VDD
VDD
GND
SCK VCMOS GND
GND
VREF
GND
GND
SIO0
SIO1
GND
3
GND
2
VDD
B
VDD
T
GND
GND
1
A
C
D
E
F
G
H
J
K
L
M
N
P
R
S
U
Note Some signals can be applied because this pin is not connected to the inside of the chip.
3
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Pin Description
Signal
Input / Output
Type
#pins
2
Description
SIO0, SIO1
Input / Output CMOSNote1
Serial input/output. Pins for reading from and writing to the control registers using
a serial access protocol. Also used for power management.
Command input. Pins used in conjunction with SIO0 and SIO1 for reading from
and writing to the control registers. Also used for power management.
Serial clock input. Clock source used for reading from and writing to the control
registers.
CMD
SCK
Input
Input
CMOSNote1
CMOSNote1
1
1
VDD
18
1
Supply voltage for the RDRAM core and interface logic.
VDDa
Supply voltage for the RDRAM analog circuitry.
Supply voltage for CMOS input/output pins.
Ground reference for RDRAM core and interface.
Ground reference for RDRAM analog circuitry.
VCMOS
GND
2
22
2
GNDa
DQA8..DQA0
Input / Output RSLNote2
9
Data byte A. Nine pins which carry a byte of read or write data between the
Channel and the RDRAM.
CFM
Input
Input
RSLNote2
RSLNote2
1
1
Clock from master. Interface clock used for receiving RSL signals from the
Channel. Positive polarity.
CFMN
Clock from master. Interface clock used for receiving RSL signals from the
Channel. Negative polarity.
VREF
1
1
Logic threshold reference voltage for RSL signals.
CTMN
Input
Input
Input
Input
RSLNote2
RSLNote2
RSLNote2
RSLNote2
Clock to master. Interface clock used for transmitting RSL signals to the Channel.
Negative polarity.
CTM
1
3
Clock to master. Interface clock used for transmitting RSL signals to the Channel.
Positive polarity.
ROW2..ROW0
COL4..COL0
DQB8..DQB0
Row access control. Three pins containing control and address information for
row accesses.
5
Column access control. Five pins containing control and address information for
column accesses.
Input / Output RSLNote2
9
Data byte B. Nine pins which carry a byte of read or write data between the
Channel and the RDRAM.
Total pin count per package
80
Notes 1.All CMOS signals are high-true ; a high voltage is a logic one and a low voltage is logic zero.
2.All RSL signals are low-true ; a low voltage is a logic one and a high voltage is logic zero.
4
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Block Diagram
RQ7..RQ5 or
ROW2..ROW0
3
RQ4..RQ0 or
COL4..COL0
5
DQB8..DQB0
9
CTM CTMN SCK, CMD SIO0, SIO1 CFM CFMN
DQA8..DQA0
9
2
2
RCLK
RCLK
1:8 Demux
1:8 Demux
TCLK
RCLK
6
Packet Decode
Packet Decode
COLC
Control Registers
Power Modes
ROWR
11
ROWA
COLX
5
COLM
5
5
9
5
5
7
5
5
8
8
ROP DR
AV
BR
R
XOP DX
M
BX COP DC
S
BC
C
MB
MA
REFR
DEVID
Match
DM
Mux
Match
Match
Write
Buffer
Row Decode
XOP Decode
PREX
PRER
ACT
Mux
Column Decode & Mask
PREC RD, WR
Mux
DRAM Core
64x72
Sense Amp
64x72
512x128x144
64x72
72
Internal DQA Data Path
Internal DQB Data Path
72
72
Bank 0
Bank 1
Bank 2
72
9
9
9
9
•
•
•
•
•
•
•
•
•
Bank 13
Bank 14
Bank 15
9
9
Bank 16
Bank 17
Bank 18
9
9
•
•
•
•
•
•
•
•
9
9
•
Bank 29
Bank 30
Bank 31
5
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
CONTENTS
1. General Description.................................................................................................................................................8
2. Packet Format........................................................................................................................................................10
3. Field Encoding Summary......................................................................................................................................12
4. DQ Packet Timing..................................................................................................................................................14
5. COLM Packet to D Packet Mapping .....................................................................................................................14
6. ROW-to-ROW Packet Interaction..........................................................................................................................16
7. ROW-to-COL Packet Interaction...........................................................................................................................18
8. COL-to-COL Packet Interaction............................................................................................................................19
9. COL-to-ROW Packet Interaction...........................................................................................................................20
10. ROW-to-ROW Examples......................................................................................................................................21
11. Row and Column Cycle Description ..................................................................................................................22
12. Precharge Mechanisms.......................................................................................................................................23
13. Read Transaction - Example...............................................................................................................................25
14. Write Transaction - Example...............................................................................................................................26
15. Write/Retire - Examples.......................................................................................................................................27
16. Interleaved Write - Example................................................................................................................................29
17. Interleaved Read - Example................................................................................................................................30
18. Interleaved RRWW - Example.............................................................................................................................31
19. Control Register Transactions ...........................................................................................................................32
20. Control Register Packets ....................................................................................................................................33
21. Initialization..........................................................................................................................................................34
22. Control Register Summary .................................................................................................................................38
23. Power State Management ...................................................................................................................................47
24. Refresh .................................................................................................................................................................52
25. Current and Temperature Control......................................................................................................................54
26. Electrical Conditions...........................................................................................................................................55
27. Timing Conditions ...............................................................................................................................................56
28. Electrical Characteristics....................................................................................................................................58
29. Timing Characteristics........................................................................................................................................58
30. RSL Clocking .......................................................................................................................................................59
31. RSL - Receive Timing..........................................................................................................................................60
32. RSL - Transmit Timing.........................................................................................................................................61
33. CMOS - Receive Timing.......................................................................................................................................62
34. CMOS - Transmit Timing.....................................................................................................................................64
35. RSL - Domain Crossing Window........................................................................................................................65
36. Timing Parameters ..............................................................................................................................................66
37. Absolute Maximum Ratings................................................................................................................................67
6
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
38. IDD - Supply Current Profile .................................................................................................................................67
39. Capacitance and Inductance ..............................................................................................................................68
40. Interleaved Device Mode.....................................................................................................................................70
41. Glossary of Terms ...............................................................................................................................................74
42. Package Drawing.................................................................................................................................................76
43. Recommended Soldering Conditions................................................................................................................77
7
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
1. General Description
The figure on page 5 is a block diagram of the EDR2518ABSE. It consists of two major blocks : a “core” block built
from banks and sense amps similar to those found in other types of DRAM, and a Direct Rambus interface block
which permits an external controller to access this core at up to 2.1 GB/s.
Control Registers: The CMD, SCK, SIO0, and SIO1 pins appear in the upper center of the block diagram. They are
used to write and read a block of control registers. These registers supply the RDRAM device configuration
information to a controller and they select the operating modes of the device. The nine bit REFR value is used for
tracking the last refreshed row. Most importantly, the five bits DEVID specifies the device address of the RDRAM
device on the Channel.
Clocking: The CTM and CTMN pins (Clock-To-Master) generate TCLK (Transmit Clock), the internal clock used to
transmit read data. The CFM and CFMN pins (Clock-From-Master) generate RCLK (Receive Clock), the internal
clock signal used to receive write data and to receive the ROW and COL pins.
DQA, DQB Pins: These 18 pins carry read (Q) and write (D) data across the Channel. They are multiplexed / de-
multiplexed from / to two 72-bit data paths (running at one-eighth the data frequency) inside the RDRAM device.
Banks: The 32 Mbyte core of the RDRAM device is divided into 32 one-Mbyte banks, each organized as 512 rows,
with each row containing 128 dualocts (2K bytes), and each dualoct containing 16 bytes. A dualoct is the smallest
unit of data that can be addressed.
Sense Amps: The RDRAM device contains 34 sense amps. Each sense amp consists of 1,024 bytes of fast storage
(512 for DQA and 512 for DQB) and can hold one-half of one row of one bank of the RDRAM device. The sense amp
may hold any of the 512 half-rows of an associated bank. However, each sense amp is shared between two
adjacent banks of the RDRAM device. This introduces the restriction that adjacent banks may not be simultaneously
accessed.
RQ Pins: These pins carry control and address information. They are broken into two groups. RQ7..RQ5 are also
called ROW2..ROW0, and are used primarily for controlling row accesses. RQ4..RQ0 are also called COL4..COL0,
and are used primarily for controlling column accesses.
ROW Pins: The principle use of these three pins is to manage the transfer of data between the banks and the sense
amps of the RDRAM device. These pins are de-multiplexed into a 24-bit ROWA (row-activate) or ROWR (row-
operation) packet.
COL Pins: The principle use of these five pins is to manage the transfer of data between the DQA/DQB pins and the
sense amps of the RDRAM device. These pins are de-multiplexed into a 23-bit COLC (column-operation) packet and
either a 17-bit COLM (mask) packet or a 17-bit COLX (extended-operation) packet.
ACT Command: An ACT (activate) command from an ROWA packet causes one of the 512 rows of the selected
bank to be loaded to its associated sense amps (two 512 byte sense amps for DQA and two for DQB).
PRER Command: A PRER (precharge) command from an ROWR packet causes the selected bank to release its
two associated sense amps, permitting a different row in that bank to be activated, or permitting adjacent banks to be
activated.
8
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
RD Command: The RD (read) command causes one of the 128 dualocts of one of the sense amps to be transmitted
on the DQA/DQB pins of the Channel.
WR Command: The WR (write) command causes a dualoct received from the DQA/DQB data pins of the Channel to
be loaded into the write buffer. There is also space in the write buffer for the BC bank address and C column
address information. The data in the write buffer is automatically retired (written with optional bytemask) to one of the
128 dualocts of one of the sense amps during a subsequent COP command. A retire can take place during a RD,
WR, or NOCOP to another device, or during a WR or NOCOP to the same device. The write buffer will not retire
during a RD to the same device. The write buffer reduces the delay needed for the internal DQA/DQB data path turn-
around.
PREC Precharge: The PREC, RDA and WRA commands are similar to NOCOP, RD and WR, except that a precharge
operation is performed at the end of the column operation. These commands provide a second mechanism for
performing precharge.
PREX Precharge: After a RD command, or after a WR command with no byte masking (M=0), a COLX packet may
be used to specify an extended operation (XOP). The most important XOP command is PREX. This command
provides a third mechanism for performing precharge.
9
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
2. Packet Format
Figure 2-1 shows the formats of the ROWA and ROWR packets on the ROW pins. Table 2-1 describes the fields
which comprise these packets. DR4T and DR4F bits are encoded to contain both the DR4 device address bit and a
framing bit which allows the ROWA or ROWR packet to be recognized by the RDRAM device.
The AV (ROWA/ROWR packet selection) bit distinguishes between the two packet types. Both the ROWA and
ROWR packet provide a five bit device address and a four bit bank address. An ROWA packet uses the remaining
bits to specify a nine bit row address, and the ROWR packet uses the remaining bits for an eleven bit opcode field.
Note the use of the “RsvX” notation to reserve bits for future address field extension.
Figure 2-1 also shows the formats of the COLC, COLM, and COLX packets on the COL pins. Table 2-2 describes
the fields which comprise these packets.
The COLC packet uses the S (Start) bit for framing. A COLM or COLX packet is aligned with this COLC packet, and
is also framed by the S bit.
The 23 bit COLC packet has a five bit device address, a four bit bank address, a six bit column address, and a four
bit opcode. The COLC packet specifies a read or write command, as well as some power management commands.
The remaining 17 bits are interpreted as a COLM (M=1) or COLX (M=0) packet. A COLM packet is used for a
COLC write command which needs bytemask control. The COLM packet is associated with the COLC packet from a
time tRTR earlier. An COLX packet may be used to specify an independent precharge command. It contains a five bit
device address, a four bit bank address, and a five bit opcode. The COLX packet may also be used to specify some
housekeeping and power management commands. The COLX packet is framed within a COLC packet but is not
otherwise associated with any other packet.
Table 2-1 Field Description for ROWA Packet and ROWR Packet
Field
Description
DR4T, DR4F
DR3..DR0
BR4..BR0
AV
Bits for framing (recognizing) a ROWA or ROWR packet. Also encodes highest device address bit.
Device address for ROWA or ROWR packet.
Bank address for ROWA or ROWR packet. RsvB denotes bits ignored by the RDRAM device.
Selects between ROWA packet (AV=1) and ROWR packet (AV=0).
Row address for ROWA packet. RsvR denotes bits reserved for future row address extension.
Opcode field for ROWR packet. Specifies precharge, refresh, and power management functions.
R8..R0
ROP10..ROP0
Table 2-2 Field Description for COLC Packet, COLM Packet, and COLX Packet
Field
Description
S
Bit for framing (recognizing) a COLC packet, and indirectly for framing COLM and COLX packets.
Device address for COLC packet.
DC4..DC0
BC4..BC0
C6..C0
Bank address for COLC packet. RsvB denotes bits reserved for future extension (controller drivers 0's).
Column address for COLC packet.
COP3..COP0
M
Opcode field for COLC packet. Specifies read, write, precharge, and power management functions.
Selects between COLM packet (M=1) and COLX packet (M=0).
MA7..MA0
MB7..MB0
DX4..DX0
BX4..BX0
XOP4..XOP0
Bytemask write control bits. 1=write, 0=no-write. MA0 controls the earliest byte on DQA8..0.
Bytemask write control bits. 1=write, 0=no-write. MB0 controls the earliest byte on DQB8..0.
Device address for COLX packet.
Bank address for COLX packet. RsvB denotes bits reserved for future extension (controller drivers 0's).
Opcode field for COLX packet. Specifies precharge, IOL control, and power management functions.
10
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 2-1 Packet Formats
T
T
T
T
T
T
T
T
11
0
1
2
3
8
9
10
CTM/CFM
CTM/CFM
DR2 BR0 BR3 RsvR R8
DR1 BR1 BR4 RsvR R7
DR0 BR2 RsvB AV=1 R6
R5
R4
R3
R2
R1
R0
DR2 BR0 BR3 ROP10ROP8ROP5ROP2
DR1 BR1 BR4 ROP9ROP7ROP4ROP1
DR0 BR2 RsvB AV=0 ROP6ROP3ROP0
ROW2 DR4T
ROW1
ROW0 DR3
ROW2 DR4T
ROW1
ROW0 DR3
DR4F
DR4F
ROWA Packet
ROWR Packet
T
T
T
T
3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11T12 T13 T14 T15
0
1
2
CTM/CFM
CTM/CFM
ROW2
..ROW0
S=1
C6
C5
C4
C3
ACT a0
WR b1
PRER c0
DC4
DC3
DC2
DC1
DC0
COL4
COL3
COL2
COL1
COL0
tPACKET
COL4
..COL0
MSK (b1) PREX d0
COP1
COP0
COP2
RsvB BC2 C2
BC4 BC1 C1
DQA8..0
DQB8..0
COP3 BC3 BC0 C0
COLC Packet
T
T
T
T
T
T
T
T
15
8
9
10
11
12
13
14
CTM/CFM
CTM/CFM
Note1
Note2
MA7 MA5 MA3 MA1
DX4 XOP4 RsvB BX1
COL4
COL3
COL2
COL1
COL0
COL4
COL3
COL2
COL1
COL0
S=1
S=1
M=1 MA6 MA4 MA2 MA0
MB7 MB4 MB1
MB6 MB3 MB0
MB5 MB2
M=0 DX3 XOP3 BX4 BX0
DX2 XOP2 BX3
DX1 XOP1 BX2
DX0 XOP0
COLM Packet
COLX Packet
Notes 1. The COLM is associated with a previous COLC, and is aligned with the present COLC, indicated
by the Start bit (S=1) position.
2. The COLX is aligned with the present COLC, indicates by the Start bit (S=1) position.
11
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
3. Field Encoding Summary
Table 3-1 shows how the six device address bits are decoded for the ROWA and ROWR packets. The DR4T and
DR4F encoding merges a fifth device bit with a framing bit. When neither bit is asserted, the device is not selected.
Note that a broadcast operation is indicated when both bits are set. Broadcast operation would typically be used for
refresh and power management commands. If the device is selected, the DM (DeviceMatch) signal is asserted and
an ACT or ROP command is performed.
Table 3-1 Device Field Encodings for ROWA Packet and ROWR Packet
DR4T
DR4F
Device Selection
Device Match signal (DM)
1
0
1
0
1
1
0
0
All devices (broadcast) DM is set to 1
One device selected
One device selected
No packet present
DM is set to 1 if {DEVID4..DEVID0} == {0, DR3..DR0} else DM is set to 0
DM is set to 1 if {DEVID4..DEVID0} == {1, DR3..DR0} else DM is set to 0
DM is set to 0
Table 3-2 shows the encodings of the remaining fields of the ROWA and ROWR packets. An ROWA packet is
specified by asserting the AV bit. This causes the specified row of the specified bank of this device to be loaded into
the associated sense amps.
An ROWR packet is specified when AV is not asserted. An 11 bit opcode field encodes a command for one of the
banks of this device. The PRER command causes a bank and its two associated sense amps to precharge, so
another row or an adjacent bank may be activated.
The REFA (refresh-activate) command is similar to the ACT command, except the row address comes from an
internal register REFR, and REFR is incremented at the largest bank address. The REFP (refresh-precharge)
command is identical to a PRER command.
The NAPR, NAPRC, PDNR, ATTN, and RLXR commands are used for managing the power dissipation of the
RDRAM and are described in more detail in “23. Power State Management”. The TCEN and TCAL commands are
used to adjust the output driver slew rate and they are described in more detail in “25. Current and Temperature
Control”.
Table 3-2 ROWA Packet and ROWR Packet Field Encodings
DM AV
ROP10..ROP0 Field
Name
Command Description
Note1
10
—
9
8
7
6
5
4
3
2 :0
0
1
—
1
—
—
—
—
—
— — ---
—
No operation.
Row address
ACT
Activate row R8..R0 of bank BR4..BR0 of device and move device to
ATTNNote2
.
Note3
1
1
0
0
1
0
1
0
0
0
0
1
0
1
x
x
x
x
000 PRER
000 REFA
Precharge bank BR4..BR0 of this device.
0
0
Refresh (activate) row REFR8..REFR0 of bank BR3..BR0 of device.
Increment REFR if BR4..BR0=11111 (see Figure 24-1).
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
x
x
x
x
x
0
0
0
0
x
x
x
x
x
0
0
0
1
0
0
0
x
x
0
0
0
0
0
0
0
x
x
0
0
0
1
0
0
0
x
x
0
0
0
0
0
1
1
x
x
0
0
0
0
1
0
1
x
x
0
0
0
x
x
x
x
0
1
x
x
0
000 REFP
000 PDNR
000 NAPR
000 NAPRC
Precharge bank BR4..BR0 of this device after REFA (see Figure 24-1).
Move this device into the powerdown (PDN) power state (see figure 23-3).
Move this device into the nap (NAP) power state (see Figure 23-3).
Move this device into the nap (NAP) power state conditionally.
000 ATTNNote2 Move this device into the attention (ATTN) power state (see Figure 23-1).
000 RLXR
001 TCAL
010 TCEN
000 NOROP
Move this device into the standby (STBY) power state (see Figure 23-2).
Temperature calibrate this device (see figure 25-2).
Temperature calibrate/enable this device (see Figure 25-2).
No operation.
Notes 1. The DM (Device Match signal) value is determined by the DR4T, DR4F, DR3..DR0 field of the ROWA and ROWR packets.
See Table 3-1.
2. The ATTN command does not cause a RLX-to-ATTN transition for a broadcast operation (DR4T/DR4F=1/1).
3. An “x” entry indicates which commands may be combined. For instance, the three commands PRER/NAPRC/RLXR may
be specified in one ROP value (011000111000).
12
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Table 3-3 shows the COP field encoding. The device must be in the ATTN power state in order to receive COLC
packets. The COLC packet is used primarily to specify RD (read) and WR (write) commands. Retire operations
(moving data from the write buffer to a sense amp) happen automatically. See Figure 15-1 for a more detailed
description.
The COLC packet can also specify a PREC command, which precharges a bank and its associated sense amps.
The RDA/WRA commands are equivalent to a combining RD/WR with a PREC. RLXC (relax) performs a power mode
transition. See 23. Power State Management.
Table 3-3 COLC Packet Field Encodings
S
DC4..DC0
(select device)Note1
COP3..0
Name
Command Description
0
1
1
1
- - - -
- - - - -
- - - - -
x000Note2
x001
—
No operation.
/= (DEVID4..0)
== (DEVID4..0)
== (DEVID4..0)
—
Retire write buffer of this device.
NOCOP
WR
Retire write buffer of this device.
Retire write buffer of this device, then write column C6..C0 of bank
BC4..BC0 to write buffer.
1
1
1
== (DEVID4..0)
== (DEVID4..0)
== (DEVID4..0)
x010
x011
x100
RSRV
RD
Reserved, no operation.
Read column C6..C0 of bank BC4..BC0 of this device.
Retire write buffer of this device, then precharge bank BC4..BC0 (see
Figure 12-2).
PREC
1
== (DEVID4..0)
x101
WRA
Same as WR, but precharge bank BC4..BC0 after write buffer (with new
data) is retired.
1
1
1
== (DEVID4..0)
== (DEVID4..0)
== (DEVID4..0)
x110
x111
1xxx
RSRV
RDA
Reserved, no operation.
Same as RD, but precharge bank BC4..BC0 afterward.
Move this device into the standby (STBY) power state (see Figure 23-2).
RLXC
Notes 1. “/=” means not equal, “==” means equal.
2. An “x” entry indicates which commands may be combined. For instance, the two commands WR/RLXC
may be specified in one COP value(1001).
Table 3-4 shows the COLM and COLX field encodings. The M bit is asserted to specify a COLM packet with two 8
bit bytemask fields MA and MB. If the M bit is not asserted, an COLX is specified. It has device and bank address
fields, and an opcode field. The primary use of the COLX packet is to permit an independent PREX (precharge)
command to be specified without consuming control bandwidth on the ROW pins. It is also used for the CAL
(calibrate) and SAM (sample) current control commands (see 25. Current and Temperature Control), and for the
RLXX power mode command (see 23. Power State Management).
Table 3-4 COLM Packet and COLX Packet Field Encodings
M
DX4..DX0
XOP4..0 Name
Command Description
(select device)
1
0
0
0
0
0
0
0
- - - -
-
-
MSK
—
MB/MA bytemasks used by WR/WRA.
No operation.
/= (DEVID4..0)
== (DEVID4..0) 00000
== (DEVID4..0) 1xxx0Note PREX
NOXOP
No operation.
Precharge bank BX4..BX0 of this device (see Figure 12-2).
Calibrate (drive) IOL current for this device (see Figure 25-1).
== (DEVID4..0) x10x0
== (DEVID4..0) x11x0
== (DEVID4..0) xxx10
== (DEVID4..0) xxxx1
CAL
CAL / SAM Calibrate (drive) and Sample (update) IOL current for this device (see Figure 25-1).
RLXX
RSRV
Move this device into the standby (STBY) power state (see Figure 23-2).
Reserved, no operation.
Note An “x” entry indicates which commands may be combined. For instance, the two commands PREX/RLXX
may be specified in one XOP value (10010).
13
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
4. DQ Packet Timing
Figure 4-1 shows the timing relationship of COLC packets with D and Q data packets. This document uses a
specific convention for measuring time intervals between packets: all packets on the ROW and COL pins (ROWA,
ROWR, COLC, COLM, COLX) use the trailing edge of the packet as a reference point, and all packets on the
DQA/DQB pins (D and Q) use the leading edge of the packet as a reference point.
An RD or RDA command will transmit a dualoct of read data Q a time tCAC later. This time includes one to five
cycles of round-trip propagation delay on the Channel. The tCAC parameter may be programmed to a one of a range
of values (8, 9, 10, 11, or 12 tCYCLE). The value chosen depends upon the number of RDRAM devices on the Channel
and the RDRAM device timing bin. See Figure 22-1(5/7) “TPARM Register” for more information.
A WR or WRA command will receive a dualoct of write data D a time tCWD later. This time does not need to include
the round-trip propagation time of the Channel since the COLC and D packets are traveling in the same direction.
When a Q packet follows a D packet (shown in the left half of the figure), a gap (tCAC-tCWD) will automatically appear
between them because the tCWD value is always less than the tCAC value. There will be no gap between the two COLC
packets with the WR and RD commands which schedule the D and Q packets.
When a D packet follows a Q packet (shown in the right half of the figure), no gap is needed between them because
the tCWD value is less than the tCAC value. However, a gap of tCAC - tCWD or greater must be inserted between the
COLC packets with the RD WR commands by the controller so the Q and D packets do not overlap.
Figure 4-1 Read (Q) and Write (D) Data Packet - Timing for tCAC = 8,9,10,11 or 12 tCYCLE
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T
T
T
T
19 T
T
T
T
T
T
27T
T
T
T
31 T
T
T
T
35 T
T
T
T
39 T
T
T
T
43T
T T T
45 46 47
44
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
0
4
8
12
16
20
24
28
32
36
40
CTM/CFM
This gap on the DQA/DQB pins appears automatically
This gap on the COL pins must be inserted by the controller
ROW2
..ROW0
tCAC -tCWD
tCAC -tCWD
WR d1
•••
tCWD
•••
tCWD
COL4
WR a1
RD b1
RD c1
..COL0
Q (c1)
D (d1)
Q (b1)
D (a1)
DQA8..0
DQB8..0
tCAC
•••
•••
tCAC
5. COLM Packet to D Packet Mapping
Figure 5-1 shows a write operation initiated by a WR command in a COLC packet. If a subset of the 16 bytes of
write data are to be written, then a COLM packet is transmitted on the COL pins a time tRTR after the COLC packet
containing the WR command. The M bit of the COLM packet is set to indicate that it contains the MA and MB mask
fields. Note that this COLM packet is aligned with the COLC packet which causes the write buffer to be retired. See
Figure 15-1 for more details.
If all 16 bytes of the D data packet are to be written, then no further control information is required. The packet slot
that would have been used by the COLM packet (tRTR after the COLC packet) is available to be used as an COLX
packet. This could be used for a PREX precharge command or for a housekeeping command (this case is not
shown). The M bit is not asserted in an COLX packet and causes all 16 bytes of the previous WR to be written
unconditionally. Note that a RD command will never need a COLM packet, and will always be able to use the COLX
packet option (a read operation has no need for the byte-write-enable control bits).
The figure 5-1 also shows the mapping between the MA and MB fields of the COLM packet and bytes of the D
packet on the DQA and DQB pins. Each mask bit controls whether a byte of data is written (=1) or not written (=0).
14
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 5-1 Mapping between COLM Packet and D Packet for WR Command
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T
T
T
T
19 T
T
T
T
23 T
T
T
T
27T
T
T
T
31 T
T
T
T
35 T
T
T
T
39 T
T
T
T
43T
T T T
45 46 47
44
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
0
4
8
12
16
20
24
28
32
36
40
CTM/CFM
ROW2
ACT a0
PRER a2
ACT b0
..ROW0
tRTR
COL4
..COL0
WR a1
retire (a1)
MSK (a1)
tCWD
D (a1)
DQA8..0
DQB8..0
Transaction a: WR
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a3 = {Da,Ba}
COLM Packet
D Packet
T
T
T
T
20
T
T
T
T
22
17
18
19
19
20
21
CTM/CFM
CTM/CFM
MA7 MA5 MA3 MA1
COL4
COL3
COL2
COL1
COL0
DB17 DB26 DB35 DB45 DB53 DB62 DB71
DB16 DB25 DB34 DB44 DB52 DB61 DB70
DQB8
DQB7
DB8
DB7
M=1 MA6 MA4 MA2 MA0
MB7 MB4 MB1
MB6 MB3 MB0
MB5 MB2
•
•
•
DQB1
DB10 DB19 DB28 DB37 DB46 DB55 DB64
DB9 DB18 DB27 DB36 DB45 DB54 DB63
DB1
DB0
DQB0
MB0 MB1 MB2 MB3 MB4 MB5 MB6 MB7
Each bit of the MB7..MB0 field
controls writing (=1) or no writing
(=0) of the indicated DB bits when
the M bit of the COLM packet is one.
When M=1, the MA and MB
fields control writing of
individual data bytes.
When M=0, all data bytes are
written unconditionally.
DA17 DA26 DA35 DA45 DA53 DA62 DA71
DA8
DQA8
DQA7
DA16 DA25 DA34 DA44 DA52 DA61 DA70
DA7
•
•
•
DQA1
DA10 DA19 DA28 DA37 DA46 DA55 DA64
DA9 DA18 DA27 DA36 DA45 DA54 DA63
DA1
DA0
Each bit of the MA7..MA0 field
controls writing (=1) or no writing
(=0) of the indicated DA bits when
the M bit of the COLM packet is one.
DQA0
MA0 MA1 MA2 MA3 MA4 MA5 MA6 MA7
15
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
6. ROW-to-ROW Packet Interaction
Figure 6-1 shows two packets on the ROW pins separated by an interval tRRDELAY which depends upon the packet
contents. No other ROW packets are sent to banks {Ba, Ba+1, Ba-1} between packet “a” and packet “b” unless
noted otherwise.
Figure 6-1 ROW-to-ROW Packet Interaction - Timing
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11T12T13 T14 T15 T16T17 T18 T19
CTM/CFM
tRRDELAY
ROW2
ROPa a0
ROPb b0
..ROW0
COL4
..COL0
DQA8..0
DQB8..0
Transaction a: ROPa
Transaction b: ROPb
a0 = {Da,Ba,Ra}
b0= {Db,Bb,Rb}
Table 6-1 summarizes the tRRDELAY values for all possible cases.
Cases RR1 through RR4 show two successive ACT commands. In case RR1, there is no restriction since the ACT
commands are to different devices. In case RR2, the tRR restriction applies to the same device with non-adjacent
banks. Cases RR3 and RR4 are illegal (as shown) since bank Ba needs to be precharged. If a PRER to Ba, Ba+1,
or Ba-1 is inserted, tRRDELAY is tRC (tRAS to the PRER command, and tRP to the next ACT).
Cases RR5 through RR8 show an ACT command followed by a PRER command. In cases RR5 and RR6, there are
no restrictions since the commands are to different devices or to non-adjacent banks of the same device. In cases
RR7 and RR8, the tRAS restriction means the activated bank must wait before it can be precharged.
Cases RR9 through RR12 show a PRER command followed by an ACT command. In cases RR9 and RR10, there
are essentially no restrictions since the commands are to different devices or to non-adjacent banks of the same
device. RR10a and RR10b depend upon whether a bracketed bank (Ba+-1) is precharged or activated. In cases
RR11 and RR12, the same and adjacent banks must all wait tRP for the sense amp and bank to precharge before
being activated.
Cases RR13 through RR16 summarize the combinations of two successive PRER commands. In case RR13 there
is no restriction since two devices are addressed. In RR14, tPP applies, since the same device is addressed. In
RR15 and RR16, the same bank or an adjacent bank may be given repeated PRER commands with only the tPP
restriction.
Two adjacent banks can’t be activate simultaneously. A precharge command to one bank will thus affect the state of
the adjacent banks (and sense amps). If bank Ba is activate and a PRER is directed to Ba, then bank Ba will be
precharged along with sense amps Ba-1/Ba and Ba/Ba+1. If bank Ba+1 is activate and a PRER is directed to Ba,
then bank Ba+1 will be precharged along with sense amps Ba/Ba+1 and Ba+1/Ba+2. If bank Ba-1 is activate and a
PRER is directed to Ba, then bank Ba-1 will be precharged along with sense amps Ba/Ba-1 and Ba-1/Ba-2.
A ROW packet may contain commands other than ACT or PRER. The REFA and REFP commands are equivalent
to ACT and PRER for interaction analysis purposes. The interaction rules of the NAPR, NAPRC, PDNR, RLXR,
ATTN, TCAL, and TCEN commands are discussed in later section (see Table 3-2 for cross-ref).
16
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Table 6-1 ROW-to-ROW Packet Interaction - Rules
Case # ROPa Da Ba Ra ROPb Db
Bb
Rb
tRRDELAY
Example
RR1
RR2
RR3
RR4
RR5
RR6
RR7
RR8
RR9
RR10
ACT Da Ba Ra ACT /= Da xxxx
x..x tPACKET
x..x tRR
Figure 10-2
Figure 10-2
ACT Da Ba Ra ACT == Da /= {Ba, Ba+1, Ba-1}
ACT Da Ba Ra ACT == Da == {Ba+1, Ba-1}
ACT Da Ba Ra ACT == Da == {Ba}
ACT Da Ba Ra PRER /= Da xxxx
x..x tRC - illegal unless PRER to Ba / Ba+1 / Ba-1 Figure 10-1
x..x tRC - illegal unless PRER to Ba / Ba+1 / Ba-1 Figure 10-1
x..x tPACKET
x..x tPACKET
x..x tRAS
Figure 10-2
Figure 10-2
Figure 10-1
Figure 13-1
Figure 10-3
Figure 10-3
ACT Da Ba Ra PRER == Da /= {Ba, Ba+1, Ba-1}
ACT Da Ba Ra PRER == Da == {Ba+1, Ba-1}
ACT Da Ba Ra PRER == Da == {Ba}
PRER Da Ba Ra ACT /= Da xxxx
x..x tRAS
x..x tPACKET
PRER Da Ba Ra ACT == Da /= {Ba, Ba+-1, Ba+-2} x..x tPACKET
RR10a PRER Da Ba Ra ACT == Da == {Ba+2}
RR10b PRER Da Ba Ra ACT == Da == {Ba-2}
x..x tPACKET/tRP if Ba+1 is precharged/activated.
x..x tPACKET/tRP if Ba-1 is precharged/activated.
RR11
RR12
RR13
RR14
RR15
RR16
PRER Da Ba Ra ACT == Da == {Ba+1, Ba-1}
PRER Da Ba Ra ACT == Da == {Ba}
PRER Da Ba Ra PRER /= Da xxxx
x..x tRP
x..x tRP
x..x tPACKET
x..x tPP
x..x tPP
x..x tPP
Figure 10-1
Figure 10-1
Figure 10-3
Figure 10-3
Figure 10-3
Figure 10-3
PRER Da Ba Ra PRER == Da /= {Ba, Ba+1, Ba-1}
PRER Da Ba Ra PRER == Da == {Ba+1, Ba-1}
PRER Da Ba Ra PRER == Da == {Ba}
17
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
7. ROW-to-COL Packet Interaction
Figure 7-1 shows two packets on the ROW and COL pins. They must be separated by an interval tRCDELAY which
depends upon the packet contents.
Figure 7-1 ROW-to-COL Packet Interaction- Timing
T
T
T
T
T
T
T
T
T8
T
T
T
11T
T
T
T
15 T T
16
T
T19
1
2
3
5
6
7
9
10
13 14
17 18
0
4
12
CTM/CFM
tRCDELAY
ROW2
ROPa a0
..ROW0
COL4
COPb b1
..COL0
DQA8..0
DQB8..0
Transaction a: ROPa
Transaction b: COPb
a0 = {Da,Ba,Ra}
b1= {Db,Bb,Cb1}
Table 7-1 summarizes the tRCDELAY values for all possible cases. Note that if the COL packet is earlier than the
ROW packet, it is considered a COL-to-ROW packet interaction.
Cases RC1 through RC5 summarize the rules when the ROW packet has an ACT command. Figure 13-1 and
Figure 14-1 show examples of RC5 - an activation followed by a read or write. RC4 is an illegal situation, since a
read or write of a precharged banks is being attempted (remember that for a bank to be activated, adjacent banks
must be precharged). In cases RC1, RC2, and RC3, there is no interaction of the ROW and COL packets.
Cases RC6 through RC8 summarize the rules when the ROW packet has a PRER command. There is either no
interaction (RC6 through RC9) or an illegal situation with a read or write of a precharged bank (RC9).
The COL pins can also schedule a precharge operation with a RDA, WRA, or PREC command in a COLC packet or
a PREX command in a COLX packet. The constraints of these precharge operations may be converted to equivalent
PRER command constraints using the rules summarized in Figure 12-2.
Table 7-1 ROW-to-COL Packet Interaction - Rules
Case # ROPa Da
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ra
Ra
Ra
Ra
Ra
Ra
Ra
Ra
Ra
Ra
COPb
Db
Bb
Cb1
x..x
x..x
x..x
x..x
x..x
x..x
x..x
x..x
x..x
tRCDELAY Example
RC1
RC2
RC3
RC4
RC5
RC6
RC7
RC8
RC9
ACT Da
ACT Da
ACT Da
ACT Da
ACT Da
PRER Da
PRER Da
PRER Da
PRER Da
NOCOP, RD, retire /= Da
xxxx
0
NOCOP
== Da
== Da
== Da
== Da
xxxx
0
RD, retire
RD, retire
RD, retire
/= {Ba, Ba+1, Ba-1}
== {Ba+1, Ba-1}
== {Ba}
0
Illegal
tRCD
Figure 13-1
NOCOP, RD, retire /= Da
xxxx
0
NOCOP
== Da
== Da
== Da
xxxx
0
RD, retire
RD, retire
/= {Ba, Ba+1, Ba-1}
== {Ba+1, Ba-1}
0
Illegal
18
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
8. COL-to-COL Packet Interaction
Figure 8-1 COL-to-COL Packet Interaction- Timing
Figure 8-1 shows three arbitrary packets on the
COL pins. Packets “b” and “c” must be separated by
an interval tCCDELAY which depends upon the
command and address values in all three packets.
Table 8-1 summarizes the tCCDELAY values for all
possible cases.
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T T
16
T
T19
1
2
3
5
6
7
9
10
13 14
17 18
0
4
8
12
CTM/CFM
ROW2
..ROW0
Cases CC1 through CC5 summarize the rules for
every situation other than the case when COPb is a
WR command and COPc is a RD command. In
CC3, when a RD command is followed by a WR
command, a gap of tCAC - tCWD must be inserted
between the two COL packets. See Figure 4-1 for
more explanation of why this gap is needed. For
cases CC1, CC2, CC4, and CC5, there is no
restriction (tCCDELAY is tCC).
tCCDELAY
COL4
..COL0
COPa a1 COPb b1
COPc c1
DQA8..0
DQB8..0
Transaction a: COPa
Transaction b: COPb
Transaction c: COPc
a1 = {Da,Ba,Ca1}
b1 = {Db,Bb,Cb1}
c1 = {Dc,Bc,Cc1}
In cases CC6 through CC10, COPb is a WR command and COPc is a RD command. The tCCDELAY value needed
between these two packets depends upon the command and address in the packet with COPa. In particular, in case
CC6 when there is WR-WR-RD command sequence directed to the same device, a gap will be needed between the
packets with COPb and COPc. The gap will need a COLC packet with a NOCOP command directed to any device in
order to force an automatic retire to take place. Figure 15-2 (right) provides a more detailed explanation of this case.
Cases CC7, CC8, CC9 and CC10 have no restriction (tCCDELAY is tCC).
For the purposes of analyzing COL-to-ROW interactions, the PREC, WRA, and RDA commands of the COLC
packet are equivalent to the NOCOP, WR, and RD commands. These commands also cause a precharge operation
PREC to take place. This precharge may be converted to an equivalent PRER command on the ROW pins using the
rules summarized in Figure 12-2.
Table 8-1 COL-to-COL Packet Interaction - Rules
Case # COPa Da
Ba Ca1 COPb
Db Bb Cb1 COPc
Dc
Bc Cc1 tCCDELAY
x..x x..x tCC
x..x x..x tCC
x..x x..x tCC +tCAC -tCWD
x..x x..x tCC
Example
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
CC9
CC10
xxxx
xxxx
xxxx
xxxx
xxxx
WR
xxxxx x..x x..x NOCOP Db Bb Cb1 xxxx
xxxxx
xxxxx x..x x..x RD, WR Db Bb Cb1 NOCOP xxxxx
xxxxx x..x x..x RD
xxxxx x..x x..x RD
xxxxx x..x x..x WR
Db Bb Cb1 WR
Db Bb Cb1 RD
Db Bb Cb1 WR
Db Bb Cb1 RD
Db Bb Cb1 RD
Db Bb Cb1 RD
Db Bb Cb1 RD
Db Bb Cb1 RD
xxxxx
xxxxx
xxxxx
== Db
/= Db
== Db
== Db
== Db
Figure 4-1
Figure 13-1
Figure 14-1
Figure 15-1
x..x x..x tCC
x..x x..x tRTR
x..x x..x tCC
== Db
== Db
/= Db
x
x
x
x
x
x..x WR
x..x WR
x..x WR
x..x WR
x..x WR
WR
WR
x..x x..x tCC
x..x x..x tCC
x..x x..x tCC
NOCOP == Db
RD == Db
19
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
9. COL-to-ROW Packet Interaction
Figure 9-1 COL-to-ROW Packet Interaction- Timing
Figure 9-1 shows arbitrary packets on the COL
and ROW pins. They must be separated by an
interval tCRDELAY which depends upon the
command and address values in the packets.
Table 9-1 summarizes the tCRDELAY value for all
possible cases.
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
T
T
15 T16
T
T
T19
1
2
3
5
6
7
9
10
13 14
17 18
CTM/CFM
tCRDELAY
ROW2
ROPb b0
..ROW0
Cases CR1, CR2, CR3, and CR9 show no
interaction between the COL and ROW packets,
either because one of the commands is a NOP or
because the packets are directed to different
devices or to non-adjacent banks.
COL4
COPa a1
..COL0
DQA8..0
DQB8..0
Case CR4 is illegal because an already-activated
bank is to be re-activated without being
precharged. Case CR5 is illegal because an
adjacent bank can’t be activated or precharged
until bank Ba is precharged first.
Transaction a: COPa
Transaction b: ROPb
a1= {Da,Ba,Ca1}
b0= {Db,Bb,Rb}
In case CR6, the COLC packet contains a RD command, and the ROW packet contains a PRER command for the
same bank. The tRDP parameter specifies the required spacing.
Likewise, in case CR7, the COLC packet causes an automatic retire to take place, and the ROW packet contains a
PRER command for the same bank. The tRTP parameter specifies the required spacing.
Case CR8 is labeled “Hazardous” because a WR command should always be followed by an automatic retire before
a precharge is scheduled. Figure 15-3 shows an example of what can happen when the retire is not able to happen
before the precharge.
For the purposes of analyzing COL-to-ROW interactions, the PREC, WRA, and RDA commands of the COLC
packet are equivalent to the NOCOP, WR, and RD commands. These commands also cause a precharge operation
to take place. This precharge may converted to an equivalent PRER command on the ROW pins using the rules
summarized in Figure 12-2.
A ROW packet may contain commands other than ACT or PRER. The REFA and REFP commands are equivalent
to ACT and PRER for interaction analysis purposes. The interaction rules of the NAPR, PDNR, and RLXR
commands are discussed in a later section.
Table 9-1 COL-to-ROW Packet Interaction - Rules
Case # COPa
Da
Da
Da
Da
Da
Da
Da
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ba
Ca1
Ca1
Ca1
Ca1
Ca1
Ca1
Ca1
Ca1
Ca1
Ca1
ROPb Db
Bb
Rb
tCRDELAY Example
CR1
CR2
CR3
CR4
CR5
CR6
CR7
CR8
CR9
NOCOP
x..x
x..x
xxxxx
xxxxx
xxxxx
x..x
x..x
0
RD/WR
RD/WR
RD/WR
RD/WR
RD
retire Note 1 Da
WRNote 2
/= Da
== Da
== Da
== Da
0
x..x
/= {Ba, Ba+1, Ba-1} x..x
0
ACT
ACT
== {Ba}
x..x
x..x
Illegal
Illegal
== {Ba+1, Ba-1}
PRER == Da
PRER == Da
PRER == Da
NOROP xxxxx
== {Ba, Ba+1, Ba-1} x..x
== {Ba, Ba+1, Ba-1} x..x
== {Ba, Ba+1, Ba-1} x..x
tRDP
tRTP
0
Figure 13-1
Figure 14-1
Figure 15-3
Da
Da
xxxx
xxxxx
x..x
0
Notes 1. This is any command which permits the write buffer of device Da to retire (see Table 3-3). “Ba” is the bank
address in the write buffer.
2. This situation is hazardous because the write buffer will be left unretired while the targeted bank is
precharged. See Figure 15-3.
20
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
10. ROW-to-ROW Examples
Figure 10-1 shows examples of some of the ROW-to-ROW packet spacings from Table 6-1. A complete sequence
of activate and precharge commands is directed to a bank. The RR8 and RR12 rules apply to this sequence. In
addition to satisfying the tRAS and tRP timing parameters, the separation between ACT commands to the same bank
must also satisfy the tRC timing parameter (RR4).
When a bank is activated, it is necessary for adjacent banks to remain precharged. As a result, the adjacent banks
will also satisfy parallel timing constraints; in the example, the RR11 and RR3 rules are analogous to the RR12 and
RR4 rules.
Figure 10-1 Row Packet Example
a0 = {Da,Ba,Ra}
a1 = {Da,Ba+1}
b0 = {Da,Ba+1,Rb}
b0 = {Da,Ba,Rb}
b0 = {Da,Ba+1,Rb}
b0 = {Da,Ba,Rb}
Same Device
Same Device
Same Device
Same Device
Same Device
Adjacent Bank
Adjacent Bank
Same Bank
Adjacent Bank
Same Bank
RR7
RR3
RR4
RR11
RR12
T
T1 T2 T3
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
T
T25 T26 T27
24
T
T29 T30 T31
28
T
T33 T34 T35
32
T
T37 T38 T39
36
T
T41 T42 T43
40
T
T45 T46 T47
44
0
4
CTM/CFM
ROW2
ACT a0
PRER a1
ACT b0
..ROW0
COL4
..COL0
tRAS
tRP
DQA8..0
DQB8..0
tRC
Figure 10-2 shows examples of the ACT-to-ACT (RR1, RR2) and ACT-to-PRER (RR5, RR6) command spacings
from Table 6-1. In general, the commands in ROW packets may be spaced an interval tPACKET apart unless they are
directed to the same or adjacent banks or unless they are a similar command type (both PRER or both ACT)
directed to the same device.
Figure 10-2 Row Packet Example
a0 = {Da,Ba,Ra}
Different Device
Same Device
Different Device
Same Device
Any Bank
Non-adjacent Bank RR2
Any Bank RR5
Non-adjacent Bank RR6
RR1
b0 = {Db,Bb,Rb}
c0 = {Da,Bc,Rc}
b0 = {Db,Bb,Rb}
c0 = {Da,Bc,Rc}
T0
T
T
T
T4
T
T
T
T8
T
11T12
T
T
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
27T28
T
T
T
31 T32
T
T
T
35 T36
T
39 T40
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
13 14
17 18
21 22
29 30
33 34
41 42
CTM/CFM
ROW2
ACT a0
ACT b0
ACT a0
ACT c0
ACT a0 PRER b0
ACT a0
PRER c0
..ROW0
tPACKET
tPACKET
tRR
tPACKET
COL4
..COL0
DQA8..0
DQB8..0
21
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 10-3 shows examples of the PRER-to-PRER (RR13, RR14) and PRER-to-ACT (RR9, RR10) command
spacings from Table 6-1. The RR15 and RR16 cases (PRER-to-PRER to same or adjacent banks) are not shown,
but are similar to RR14. In general, the commands in ROW packets may be spaced an interval tPACKET apart unless
they are directed to the same or adjacent banks or unless they are a similar command type (both PRER or both ACT)
directed to the same device.
Figure 10-3 Row Packet Example
a0 = {Da,Ba,Ra}
RR13 b0 = {Db,Bb,Rb}
Non-adjacent Bank RR14 c0 = {Da,Bc,Rc}
Different Device
Same Device
Any Bank
Same Device
Same Device
Different Device
Same Device
Ajacent Bank
Same Bank
Any Bank
RR15 c0 = {Da,Ba,Rc}
RR16 c0 = {Da,Ba+1Rc}
RR9
b0 = {Db,Bb,Rb}
Non-adjacent Bank RR10 c0 = {Da,Bc,Rc}
T0 T1 T2 T3 T4 T5 T6 T7 T8 T11T12T13 T14 T15 T16T17 T18 T19 T20T21 T22 T23 T24T27T28T29 T30 T31 T32T33 T34 T35 T36T39 T40T41 T42 T43T44T45 T46 T47
CTM/CFM
ROW2
PRER a0 PRER b0
PRER a0
PRER c0
PRER a0 ACT b0
PRER a0 ACT c0
..ROW0
tPACKET
tPACKET
tPACKET
tPP
COL4
..COL0
DQA8..0
DQB8..0
11. Row and Column Cycle Description
Activate: A row cycle begins with the activate (ACT) operation. The activation process is destructive; the act of
sensing the value of a bit in a bank’s storage cell transfers the bit to the sense amp, but leaves the original bit in the
storage cell with an incorrect value.
Restore: Because the activation process is destructive, a hidden operation called restore is automatically performed.
The restore operation rewrites the bits in the sense amp back into the storage cells of the activated row of the bank.
Read/Write: While the restore operation takes place, the sense amp may be read (RD) and written (WR) using
column operations. If new data is written into the sense amp, it is automatically forwarded to the storage cells of the
bank so the data in the activated row and the data in the sense amp remain identical.
Precharge: When both the restore operation and the column operations are completed, the sense amp and bank are
precharged (PRE). This leaves them in the proper state to begin another activate operation.
Intervals: The activate operation requires the interval tRCD,MIN to complete. The hidden restore operation requires the
interval tRAS,MIN - tRCD,MIN to complete. Column read and write operations are also performed during the tRAS,MIN -
tRCD,MIN interval (if more than about four column operations are performed, this interval must be increased). The
precharge operation requires the interval tRP,MIN to complete.
Adjacent Banks: An RDRAM device with a “s” designation (512K x 18 x 32s) indicates it contains “split banks”. This
means the sense amps are shared between two adjacent banks. When a row in a bank is activated, the two adjacent
sense amps are connected to (associated with) that bank and are not available for use by the two adjacent banks.
These two adjacent banks must remain precharged while the selected bank goes through its activate, restore,
read/write, and precharge operations.
For example (referring to the block diagram), if bank 5 is accessed, sense amp 4/5 and sense amp 5/6 will both be
loaded with one of the 512 rows (with 1,024 bytes loaded into each sense amp from the 2K byte row – 512 bytes to
the DQA side and 512 bytes to the DQB side). While this row from bank 5 is being accessed, no rows may be
accessed in banks 4 or 6 because of the sense amp sharing.
22
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
12. Precharge Mechanisms
Figure 12-1 shows an example of precharge with the ROWR packet mechanism. The PRER command must occur
a time tRAS after the ACT command, and a time tRP before the next ACT command. This timing will serve as a
baseline against which the other precharge mechanisms can be compared.
Figure 12-1 Precharge via PRER Command in ROWR Packet
a0 = {Da,Ba,Ra}
a5 = {Da,Ba}
b0 = {Da,Ba,Rb}
T
T1 T2 T3
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
T
T25 T26 T27
24
T
T29 T30 T31
28
T
T33 T34 T35
32
T
T37 T38 T39
36
T
T41 T42 T43
40
T
T45 T46 T47
44
0
4
CTM/CFM
ROW2
ACT a0
PRER a5
ACT b0
..ROW0
COL4
..COL0
tRAS
tRP
DQA8..0
DQB8..0
tRC
Figure 12-2 (top) shows an example of precharge with a RDA command. A bank is activated with an ROWA packet
on the ROW pins. Then, a series of four dualocts are read with RD commands in COLC packets on the COL pins.
The fourth of these commands is a RDA, which causes the bank to automatically precharge when the final read has
finished. The timing of this automatic precharge is equivalent to a PRER command in an ROWR packet on the ROW
pins that is offset a time tOFFP from the COLC packet with the RDA command. The RDA command should be treated
as a RD command in a COLC packet as well as a simultaneous (but offset) PRER command in an ROWR packet
when analyzing interactions with other packets.
Figure 12-2 (middle) shows an example of precharge with a WRA command. As in the RDA example, a bank is
activated with an ROWA packet on the ROW pins. Then, two dualocts are written with WR commands in COLC
packets on the COL pins. The second of these commands is a WRA, which causes the bank to automatically
precharge when the final write has been retired. The timing of this automatic precharge is equivalent to a PRER
command in an ROWR packet on the ROW pins that is offset a time tOFFP from the COLC packet that causes the
automatic retire. The WRA command should be treated as a WR command in a COLC packet as well as a
simultaneous (but offset) PRER command in an ROWR packet when analyzing interactions with other packets. Note
that the automatic retire is triggered by a COLC packet a time tRTR after the COLC packet with the WR command
unless the second COLC contains a RD command to the same device. This is described in more detail in Figure 15-
1.
Figure 12-2 (bottom) shows an example of precharge with a PREX command in an COLX packet. A bank is
activated with an ROWA packet on the ROW pins. Then, a series of four dualocts are read with RD commands in
COLC packets on the COL pins. The fourth of these COLC packets includes an COLX packet with a PREX
command. This causes the bank to precharge with timing equivalent to a PRER command in an ROWR packet on
the ROW pins that is offset a time tOFFP from the COLX packet with the PREX command.
23
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 12-2 Offsets for Alternate Precharge Mechanisms
COLC Packet: RDA Precharge Offset
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
T
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
T
T
27T28
T
T
T
31 T32
T
T
T
35 T36
T
T
T
39 T40
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
CTM/CFM
The RDA precharge is equivalent to a PRER command here
ACT a0 PRER a5
ROW2
ACT b0
..ROW0
tOFFP
COL4
..COL0
RD a1
RD a2
RD a3
RDA a4
Q (a1)
Q (a2)
Q (a3)
Q (a4)
DQA8..0
DQB8..0
Transaction a: RD
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a3 = {Da,Ba,Ca3}
a2 = {Da,Ba,Ca2}
a4 = {Da,Ba,Ca4}
a5 = {Da,Ba}
COLC Packet: WDA Precharge Offset
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
T
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
T
T
27T28
T
T
T
31 T32
T
T
T
35 T36
T
T
T
39 T40
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
CTM/CFM
The WRA precharge (triggered by the automatic retire) is equivalent to a PRER command here
ROW2
ACT a0
PRER a5
ACT b0
..ROW0
tRTR
tOFFP
COL4
..COL0
WR a1
WRA a2 retire (a1) retire (a2)
MSK (a1) MSK (a2)
D (a1)
D (a2)
DQA8..0
DQB8..0
Transaction a: WR
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a5 = {Da,Ba}
COLX Packet: PREX Precharge Offset
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
T
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
T
T
27T28
T
T
T
31 T32
T
T
T
35 T36
T
T
T
39 T40
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
CTM/CFM
The PREX precharge command is equivalent to a PRER command here
ACT a0 PRER a5
ROW2
ACT b0
..ROW0
tOFFP
COL4
..COL0
RD a1
RD a2
RD a3
RD a4
PREX a5
Q (a1)
Q (a2)
Q (a3)
Q (a4)
DQA8..0
DQB8..0
Transaction a: RD
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a3 = {Da,Ba,Ca3}
a2 = {Da,Ba,Ca2}
a4 = {Da,Ba,Ca4}
a5 = {Da,Ba}
24
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
13. Read Transaction - Example
Figure 13-1 shows an example of a read transaction. It begins by activating a bank with an ACT a0 command in an
ROWA packet. A time tRCD later a RD a1 command is issued in a COLC packet. Note that the ACT command
includes the device, bank, and row address (abbreviated as a0) while the RD command includes device, bank, and
column address (abbreviated as a1). A time tCAC after the RD command the read data dualoct Q (a1) is returned by
the device. Note that the packets on the ROW and COL pins use the end of the packet as a timing reference point,
while the packets on the DQA/DQB pins use the beginning of the packet as a timing reference point.
A time tCC after the first COLC packet on the COL pins a second is issued. It contains a RD a2 command. The a2
address has the same device and bank address as the a1 address (and a0 address), but a different column address.
A time tCAC after the second RD command a second read data dualoct Q(a2) is returned by the device.
Next, a PRER a3 command is issued in an ROWR packet on the ROW pins. This causes the bank to precharge so
that a different row may be activated in a subsequent transaction or so that an adjacent bank may be activated. The
a3 address includes the same device and bank address as the a0, a1, and a2 addresses. The PRER command
must occur a time tRAS or more after the original ACT command (the activation operation in any DRAM is destructive,
and the contents of the selected row must be restored from the two associated sense amps of the bank during the
tRAS interval). The PRER command must also occur a time tRDP or more after the last RD command. Note that the
tRDP value shown is greater than the tRDP,MIN specification in “36.Timing Parameters”. This transaction example reads
two dualocts, but there is actually enough time to read three dualocts before tRDP becomes the limiting parameter
rather than tRAS. If four dualocts were read, the packet with PRER would need to shift right (be delayed) by one tCYCLE
(note-this case is not shown).
Finally, an ACT b0 command is issued in an ROWR packet on the ROW pins. The second ACT command must
occur a time tRC or more after the first ACT command and a time tRP or more after the PRER command. This ensures
that the bank and its associated sense amps are precharged. This example assumes that the second transaction
has the same device and bank address as the first transaction, but a different row address. Transaction b may not
be started until transaction a has finished. However, transactions to other banks or other devices may be issued
during transaction a.
Figure 13-1 Read Transaction Example
T
T1 T2 T3
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
T
T25 T26 T27
24
T
T29 T30 T31
28
T
T33 T34 T35
32
T
T37 T38 T39
36
T
T41 T42 T43
40
T
T45 T46 T47
44
0
4
CTM/CFM
tRC
ROW2
ACT a0
PRER a3
ACT b0
..ROW0
tRAS
tRP
COL4
RD a1
RD a2
..COL0
tRCD
tCC
tRDP
Q (a1)
Q (a2)
DQA8..0
DQB8..0
tCAC
tCAC
Transaction a: RD
Transaction b: xx
a0 = {Da,Ba,Ra}
b0 = {Da,Ba,Rb}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a3 = {Da,Ba}
25
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
14. Write Transaction - Example
Figure 14-1 shows an example of a write transaction. It begins by activating a bank with an ACT a0 command in an
ROWA packet. A time tRCD - tRTR later a WR a1 command is issued in a COLC packet (note that the tRCD interval is
measured to the end of the COLC packet with the first retire command). Note that the ACT command includes the
device, bank, and row address (abbreviated as a0) while the WR command includes device, bank, and column
address (abbreviated as a1). A time tCWD after the WR command the write data dualoct D(a1) is issued. Note that
the packets on the ROW and COL pins use the end of the packet as a timing reference point, while the packets on
the DQA/DQB pins use the beginning of the packet as a timing reference point.
A time tCC after the first COLC packet on the COL pins a second COLC packet is issued. It contains a WR a2
command. The a2 address has the same device and bank address as the a1 address (and a0 address), but a
different column address. A time tCWD after the second WR command a second write data dualoct D(a2) is issued.
A time tRTR after each WR command an optional COLM packet MSK (a1) is issued, and at the same time a COLC
packet is issued causing the write buffer to automatically retire. See Figure 15-1 for more detail on the write/retire
mechanism. If a COLM packet is not used, all data bytes are unconditionally written. If the COLC packet which
causes the write buffer to retire is delayed, then the COLM packet (if used) must also be delayed.
Next, a PRER a3 command is issued in an ROWR packet on the ROW pins. This causes the bank to precharge so
that a different row may be activated in a subsequent transaction or so that an adjacent bank may be activated. The
a3 address includes the same device and bank address as the a0, a1, and a2 addresses. The PRER command
must occur a time tRAS or more after the original ACT command (the activation operation in any DRAM is destructive,
and the contents of the selected row must be restored from the two associated sense amps of the bank during the
tRAS interval).
A PRER a3 command is issued in an ROWR packet on the ROW pins. The PRER command must occur a time tRTP
or more after the last COLC which causes an automatic retire.
Finally, an ACT b0 command is issued in an ROWR packet on the ROW pins. The second ACT command must
occur a time tRC or more after the first ACT command and a time tRP or more after the PRER command. This ensures
that the bank and its associated sense amps are precharged. This example assumes that the second transaction
has the same device and bank address as the first transaction, but a different row address. Transaction b may not
be started until transaction a has finished. However, transactions to other banks or other devices may be issued
during transaction a.
Figure 14-1 Write Transaction Example
T
T1 T2 T3
T
T5 T6 T7
T
T9 T10 T11T T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
T
T25 T26 T27
24
T
T29 T30 T31
28
T
T33 T34 T35
32
T
T37 T38 T39
36
T
T41 T42 T43
40
T
T45 T46 T47
44
0
4
8
CTM/CFM
t
RC
ROW2
..ROW0
ACT a0
PRER a3
ACT b0
t
RCD
t
t
RAS
RP
COL4
..COL0
WR a1
WR a2 retire (a1) retire (a2)
MSK (a1) MSK (a2)
t
RTP
t
RTR
t
RTR
D (a1)
D (a2)
DQA8..0
DQB8..0
t
t
CC
CWD
t
CWD
a0 = {Da,Ba,Ra}
b0 = {Da,Ba,Rb}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a3 = {Da,Ba}
Transaction a: WR
Transaction b: xx
26
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
15. Write/Retire - Examples
The process of writing a dualoct into a sense amp of an RDRAM bank occurs in two steps. The first step consists of
transporting the write command, write address, and write data into the write buffer. The second step happens when
the RDRAM device automatically retires the write buffer (with an optional bytemask) into the sense amp. This two-
step write process reduces the natural turn-around delay due to the internal bidirectional data pins.
Figure 15-1 (left) shows an example of this two step process. The first COLC packet contains the WR command
and an address specifying device, bank and column. The write data dualoct follows a time tCWD later. This
information is loaded into the write buffer of the specified device. The COLC packet which follows a time tRTR later
will retire the write buffer. The retire will happen automatically unless (1) a COLC packet is not framed (no COLC
packet is present and the S bit is zero), or (2) the COLC packet contains a RD command to the same device. If the
retire does not take place at time tRTR after the original WR command, then the device continues to frame COLC
packets, looking for the first that is not a RD directed to itself. A bytemask MSK(a1) may be supplied in a COLM
packet aligned with the COLC that retires the write buffer at time tRTR after the WR command.
The memory controller must be aware of this two-step write/retire process. Controller performance can be
improved, but only if the controller design accounts for several side effects.
Figure 15-1 (right) shows the first of these side effects. The first COLC packet has a WR command which loads the
address and data into the write buffer. The third COLC causes an automatic retire of the write buffer to the sense
amp. The second and fourth COLC packets (which bracket the retire packet) contain RD commands with the same
device, bank and column address as the original WR command. In other words, the same dualoct address that is
written is read both before and after it is actually retired. The first RD returns the old dualoct value from the sense
amp before it is overwritten. The second RD returns the new dualoct value that was just written.
Figure 15-1 Normal Retire (left) and Retire/Read Ordering (right)
T
T1 T2 T3
T
T5 T6 T7
T
T9 T10 T11
T
T13 T14 T1
12
TT1 T2 T3
0
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
0
4
8
4
CTM/CFM
CTM/CFM
Retire is automatic here unless:
(1) No COLC packet (S=0) or
(2) COLC packet is RD to device Da
This RD gets the old data
This RD gets the new data
ROW2
..ROW0
ROW2
..ROW0
tCAC
tCAC
COL4
..COL0
WR a1
COL4
..COL0
retire (a1)
MSK (a1)
WR a1
RD b1
retire (a1)
MSK (a1)
RD c1
tRTR
tRTR
D (a1)
Q (b1)
DQA8..0
DQB8..0
D (a1)
Q (
DQA8..0
DQB8..0
tCWD
tCWD
Transaction a: WR
a1= {Da,Ba,Ca1}
Transaction a: WR
Transaction b: RD
Transaction c: RD
a1= {Da,Ba,Ca1}
b1= {Da,Ba,Ca1}
c1= {Da,Ba,Ca1}
Figure 15-2 (left) shows the result of performing a RD command to the same device in the same COLC packet slot
that would normally be used for the retire operation. The read may be to any bank and column address; all that
matters is that it is to the same device as the WR command. The retire operation and MSK(a1) will be delayed by a
time tPACKET as a result. If the RD command used the same bank and column address as the WR command, the old
data from the sense amp would be returned. If many RD commands to the same device were issued instead of the
single one that is shown, then the retire operation would be held off an arbitrarily long time. However, once a RD to
another device or a WR or NOCOP to any device is issued, the retire will take place. Figure 15-2 (right) illustrates a
situation in which the controller wants to issue a WR-WR-RD COLC packet sequence, with all commands addressed
to the same device, but addressed to any combination of banks and columns.
The RD will prevent a retire of the first WR from automatically happening. But the first dualoct D(a1) in the write
27
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
buffer will be overwritten by the second WR dualoct D(b1) if the RD command is issued in the third COLC packet.
Therefore, it is required in this situation that the controller issue a NOCOP command in the third COLC packet,
delaying the RD command by a time of tPACKET. This situation is explicitly shown in Table 8-1 for the cases in which
tCCDELAY is equal to tRTR.
Figure 15-2 Retire Held Off by Read (left) and Controller Forces WWR Gap (right)
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T
T
T
T
19 T
T
T
T
T
T
T
T
T
T
T8
T
T
T
11T
T
T
T
15 T
T
T T19 T
17 18
20
1
2
3
5
6
7
9
10
13 14
17 18
2
1
2
3
5
6
7
9
10
13 14
0
4
8
12
16
20
0
4
12
16
CTM/CFM
CTM/CFM
The retire operation for a write can be
held off by a read to the same device
The controller must insert a NOCOP to retire (a1)
to make room for the data (b1) in the write buffer
ROW2
ROW2
..ROW0
..ROW0
tCAC
tCAC
COL4
..COL0
COL4
..COL0
WR a1
RD b1
retire (a1)
MSK (a1)
WR a1
WR b1 retire (a1) RD c1
MSK (a1)
tRTR + tPACKET
tRTR
Q
D (b1)
DQA8..0
DQB8..0
D (a1)
DQA8..0
D (a1)
DQB8..0
tCWD
tCWD
Transaction a: WR
Transaction b: RD
a1= {Da,Ba,Ca1}
b1= {Da,Bb,Cb1}
Transaction a: WR
Transaction b: WR
Transaction c: RD
a1= {Da,Ba,Ca1}
b1= {Da,Bb,Cb1}
c1= {Da,Bc,Cc1}
Figure 15-3 shows a possible result when a retire is held off for a long time (an extended version of Figure 15-2-left).
After a WR command, a series of six RD commands are issued to the same device (but to any combination of bank
and column addresses). In the meantime, the bank Ba to which the WR command was originally directed is
precharged, and a different row Rc is activated. When the retire is automatically performed, it is made to this new
row, since the write buffer only contains the bank and column address, not the row address. The controller can
insure that this doesn’t happen by never precharging a bank with an unretired write buffer. Note that in a system with
more than one RDRAM device, there will never be more than two RDRAM devices with unretired write buffers. This
is because a WR command issued to one device automatically retires the write buffers of all other devices written a
time tRTR before or earlier.
Figure 15-3 Retire Held Off by Reads to Same Device, Write Buffer Retired to New Row
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T
T
T
T
19 T
T
T
T
23 T
T
T
T
27T
T
T
T
31 T
T
T
T
35 T
T
T
T
39 T
T
T
T
43T
T T T
45 46 47
44
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
0
4
8
12
16
20
24
28
32
36
40
CTM/CFM
The retire operation puts the
write data in the new row
tRC
ROW2
ACT a0
PRER a2
ACT c0
..ROW0
tRAS
tRP
COL4
..COL0
WR a1
RD b1
RD b2
RD b3
RD b4
RD b5
RD b6
retire (a1)
MSK (a1)
tRCD
tRTR
D (a1)
Q (b1)
Q (b2)
Q (b3)
Q (b4)
Q (b5)
DQA8..0
DQB8..0
tCWD
tCAC
WARNING
This sequence is hazardous
and must be used with caution
Transaction a: WR a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
b2 = {Da,Bb,Cb2}
b5 = {Da,Bb,Cb5}
a2 = {Da,Ba}
b3= {Da,Bb,Cb3}
b6 = {Da,Bb,Cb6}
Transaction b: RD
b1 = {Da,Bb,Cb1}
b4 = {Da,Bb,Cb4}
c0 = {Da,Ba,Rc}
Transaction c: WR
28
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
16. Interleaved Write - Example
Figure 16-1 shows an example of an interleaved write transaction. Transactions similar to the one presented in
Figure 14-1 are directed to non-adjacent banks of a single RDRAM device. This allows a new transaction to be
issued once every tRR interval rather than once every tRC interval (four times more often). The DQ data pin efficiency
is 100% with this sequence.
With two dualocts of data written per transaction, the COL, DQA, and DQB pins are fully utilized. Banks are
precharged using the WRA autoprecharge option rather than the PRER command in an ROWR packet on the ROW
pins.
In this example, the first transaction is directed to device Da and bank Ba. The next three transactions are directed
to the same device Da, but need to use different, non-adjacent banks Bb, Bc, Bd so there is no bank conflict. The
fifth transaction could be redirected back to bank Ba without interference, since the first transaction would have
completed by then (tRC has elapsed). Each transaction may use any value of row address (Ra, Rb, ...) and column
address (Ca1, Ca2, Cb1, Cb2, ...).
Figure 16-1 Interleaved Write Transaction with Two Dualoct Data Length
T
T1 T2 T3
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
T
T25 T26 T27
24
T
T29 T30 T31
28
T
T33 T34 T35
32
T
T37 T38 T39
36
T
T41 T42 T43
40
T
T45 T46 T47
44
0
4
CTM/CFM
Transaction e can use the
same bank as transaction a
tRC
ACT c0
ROW2
ACT a0
ACT b0
ACT d0
ACT e0
ACT f0
..ROW0
tRCD
tRR
COL4
..COL0
WR z1
WRA z2
WR a1
WRA a2
WR b1
WRA b2
WR c1
WRA c2
WR d1
WR d2
WR e1
WR e2
MSK (y1) MSK (y2) MSK (z1) MSK (z2) MSK (a1) MSK (a2) MSK (b1) MSK (b2) MSK (c1) MSK (c2) MSK (d1) MSK (d2
tCWD
D (x2)
D (y1)
D (y2)
D (z1)
D (z2)
D (a1)
D (a2)
D (b1)
D (b2)
D(c1)
D (c2)
D (d1)
Q
DQA8..0
DQB8..0
Transaction y: WR
Transaction z: WR
Transaction a: WR
Transaction b: WR
Transaction c: WR
Transaction d: WR
Transaction e: WR
Transaction f: WR
y0 = {Da,Ba+4,Ry}
z0 = {Da,Ba+6,Rz}
a0 = {Da,Ba,Ra}
b0 = {Da,Ba+2,Rb}
c0 = {Da,Ba+4,Rc}
d0 = {Da,Ba+6,Rd}
e0 = {Da,Ba,Re}
y1 = {Da,Ba+4,Cy1} y2= {Da,Ba+4,Cy2}
z1 = {Da,Ba+6,Cz1} z2= {Da,Ba+6,Cz2}
y3 = {Da,Ba+4}
z3 = {Da,Ba+6}
a3 = {Da,Ba}
b3 = {Da,Ba+2}
c3 = {Da,Ba+4}
d3 = {Da,Ba+6}
e3 = {Da,Ba}
a1 = {Da,Ba,Ca1}
a2= {Da,Ba,Ca2}
b1 = {Da,Ba+2,Cb1} b2= {Da,Ba+2,Cb2}
c1 = {Da,Ba+4,Cc1} c2= {Da,Ba+4,Cc2}
d1 = {Da,Ba+6,Cd1} d2= {Da,Ba+6,Cd2}
e1 = {Da,Ba,Ce1}
f1 = {Da,Ba+2,Cf1}
e2= {Da,Ba,Ce2}
f2= {Da,Ba+2,Cf2}
f0 = {Da,Ba+2,Rf}
f3 = {Da,Ba+2}
29
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
17. Interleaved Read - Example
Figure 17-1 shows an example of interleaved read transactions. Transactions similar to the one presented in Figure
13-1 are directed to non-adjacent banks of a single RDRAM device. The address sequence is identical to the one
used in the previous write example. The DQ data pins efficiency is also 100%. The only difference with the write
example (aside from the use of the RD command rather than the WR command) is the use of the PREX command in
a COLX packet to precharge the banks rather than the RDA command. This is done because the PREX is available
for a read transaction but is not available for a masked write transaction.
Figure 17-1 Interleaved Read Transaction with Two Dualoct Data Length
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
T
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
T
T
27T28
T
T
T
31 T32
T
T
T
35 T36
T
T
T
39 T40
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37 38
41 42
CTM/CFM
Transaction e can use the
same bank as transaction a
tRC
ROW2
ACT a0
ACT b0
ACT c0
ACT d0
ACT e0
ACT f0
..ROW0
tRCD
tRR
COL4
..COL0
RD z1
Q (x2)
RD z2
PREX y3
RD a1
RD a2
PREX z3
RD b1
RD b2
PREX a3
RD c1
RD c2
PREX b3
RD d1
RDd2
PREX c3
RD e1
Q (c2)
RD e2
PREX d
tCAC
Q (z1)
Q (y1)
Q (y2)
Q (z2)
Q (a1)
Q (a2)
Q (b1)
Q (b2)
Q (c1)
Q (d1)
DQA8..0
DQB8..0
Transaction y: RD
Transaction z: RD
Transaction a: RD
Transaction b: RD
Transaction c: RD
Transaction d: RD
Transaction e: RD
Transaction f: RD
y0 = {Da,Ba+4,Ry}
z0 = {Da,Ba+6,Rz}
a0 = {Da,Ba,Ra}
b0 = {Da,Ba+2,Rb}
c0 = {Da,Ba+4,Rc}
d0 = {Da,Ba+6,Rd}
e0 = {Da,Ba,Re}
y1 = {Da,Ba+4,Cy1} y2= {Da,Ba+4,Cy2}
z1 = {Da,Ba+6,Cz1} z2= {Da,Ba+6,Cz2}
y3 = {Da,Ba+4}
z3 = {Da,Ba+6}
a3 = {Da,Ba}
b3 = {Da,Ba+2}
c3 = {Da,Ba+4}
d3 = {Da,Ba+6}
e3 = {Da,Ba}
a1 = {Da,Ba,Ca1}
a2= {Da,Ba,Ca2}
b1 = {Da,Ba+2,Cb1} b2= {Da,Ba+2,Cb2}
c1 = {Da,Ba+4,Cc1} c2= {Da,Ba+4,Cc2}
d1 = {Da,Ba+6,Cd1} d2= {Da,Ba+6,Cd2}
e1 = {Da,Ba,Ce1}
f1 = {Da,Ba+2,Cf1}
e2= {Da,Ba,Ce2}
f2= {Da,Ba+2,Cf2}
f0 = {Da,Ba+2,Rf}
f3 = {Da,Ba+2}
30
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
18. Interleaved RRWW - Example
Figure 18-1 shows a steady-state sequence of 2-dualoct RD/RD/WR/WR.. transactions directed to non-adjacent
banks of a single RDRAM device. This is similar to the interleaved write and read examples in Figure 16-1 and
Figure 17-1 except that bubble cycles need to be inserted by the controller at read/write boundaries. The DQ data
pin efficiency for the example in Figure 18-1 is 32/42 or 76%. If there were more RDRAM devices on the Channel,
the DQ pin efficiency would approach 32/34 or 94% for the two-dualoct RRWW sequence (this case is not shown).
In Figure 18-1, the first bubble type tCBUB1 is inserted by the controller between a RD and WR command on the COL
pins. This bubble accounts for the round-trip propagation delay that is seen by read data, and is explained in detail in
Figure 4-1. This bubble appears on the DQA and DQB pins as tDBUB1 between a write data dualoct D and read data
dualoct Q. This bubble also appears on the ROW pins as tRBUB1.
The second bubble type tCBUB2 is inserted (as a NOCOP command) by the controller between a WR and RD
command on the COL pins when there is a WR-WR-RD sequence to the same device. This bubble enables write
data to be retired from the write buffer without being lost, and is explained in detail in Figure 15-2. There would be no
bubble if address c0 and address d0 were directed to different devices. This bubble appears on the DQA and DQB
pins as tDBUB2 between a write data dualoct D and read data dualoct Q. This bubble also appears on the ROW pins
as tRBUB2.
Figure 18-1 Interleaved RRWW Sequence with Two Dualoct Data Length
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11T12T13 T14 T15 T16T17 T18 T19 T20T21 T22 T23 T24T25 T26 T27T28T29 T30 T31 T32T33 T34 T35 T36T37 T38 T39 T40T41 T42 T43T44T45 T46 T47
CTM/CFM
Transaction e can use the
same bank as transaction a
tRBUB2
tRBUB1
ROW2
ACT a0
ACT d0
ACT e0
ACT b0
ACT c0
..ROW0
tCBUB2
tCBUB1
tCBUB2
COL4
..COL0
RD z1
RD z2
RD a1
RD a2
PREX z3
WR b1
WRA b2
WR c1
WRA c2
NOCOP
MSK (c2)
RDd0
NOCOP
MSK (y2) PREX a3 MSK (b1) MSK (b2) MSK (c1)
tDBUB2
tDBUB1
tDBUB1
D (y2)
Q (z1)
Q (z2)
DQA8..0
DQB8..0
Q (a1)
Q (a2)
D (b1)
D (b2)
D (c1)
D (c2)
Transaction y: WR
Transaction z: RD
Transaction a: RD
Transaction b: WR
Transaction c: WR
Transaction d: RD
Transaction e: RD
Transaction f: WR
y0 = {Da,Ba+4,Ry} y1 = {Da,Ba+4,Cy1}
z0 = {Da,Ba+6,Rz} z1 = {Da,Ba+6,Cz1}
y2= {Da,Ba+4,Cy2}
z2= {Da,Ba+6,Cz2}
a2= {Da,Ba,Ca2}
b2= {Da,Ba+2,Cb2}
c2= {Da,Ba+4,Cc2}
d2= {Da,Ba+6,Cd2}
e2= {Da,Ba,Ce2}
f2= {Da,Ba+2,Cf2}
y3 = {Da,Ba+4}
z3 = {Da,Ba+6}
a3 = {Da,Ba}
b3 = {Da,Ba+2}
c3 = {Da,Ba+4}
d3 = {Da,Ba+6}
e3 = {Da,Ba}
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
b0 = {Da,Ba+2,Rb} b1 = {Da,Ba+2,Cb1}
c0 = {Da,Ba+4,Rc} c1 = {Da,Ba+4,Cc1}
d0 = {Da,Ba+6,Rd} d1 = {Da,Ba+6,Cd1}
e0 = {Da,Ba,Re}
f0 = {Da,Ba+2,Rf}
e1 = {Da,Ba,Ce1}
f1 = {Da,Ba+2,Cf1}
f3 = {Da,Ba+2}
31
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
19. Control Register Transactions
The RDRAM device has two CMOS input pins SCK and CMD and two CMOS input/output pins SIO0 and SIO1.
These provide serial access to a set of control registers in the device. These control registers provide configuration
information to the controller during the initialization process. They also allow an application to select the appropriate
operating mode of the device. SCK (serial clock) and CMD (command) are driven by the controller to all devices in
parallel. SIO0 and SIO1 are connected (in a daisy chain fashion) from one device to the next. In normal operation,
the data on SIO0 is repeated on SIO1, which connects to SIO0 of the next device (the data is repeated from SIO1 to
SIO0 for a read data packet). The controller connects to SIO0 of the first device.
Write and read transactions are each composed of four packets, as shown in Figure 19-1 and Figure 19-2. Each
packet consists of 16 bits, as summarized in Table 20-1 and Table 20-2. The packet bits are sampled on the falling
edge of SCK. A transaction begins with a SRQ (Serial Request) packet. This packet is framed with a 11110000
pattern on the CMD input (note that the CMD bits are sampled on both the falling edge and the rising edge of SCK).
The SRQ packet contains the SOP3..SOP0 (Serial Opcode) field, which selects the transaction type. The
SDEV5..SDEV0 (Serial Device address) selects one of the 32 devices. If SBC (Serial Broadcast) is set, then all
devices are selected. The SA (Serial Address) packet contains a 12 bit address for selecting a control register.
A write transaction has a SD (Serial Data) packet next. This contains 16 bits of data that is written into the selected
control register. A SINT (Serial Interval) packet is last, providing some delay for any side-effects to take place. A
read transaction has a SINT packet, then a SD packet. This provides delay for the selected device to access the
control register. The SD read data packet travels in the opposite direction (towards the controller) from the other
packet types. Because the device drives data on the falling SCK edge, the read data transmit window is offset
tSCYCLE/2 relative to the other packet types. The SCK cycle time will accommodate the total propagation delay.
Figure 19-1 Serial Write (SWR) Transaction to Control Register
T
T
T
T
68
T
20
36
52
4
SCK
1
0
1
0
1
0
1
0
CMD
next transaction
11110000
00000000...00000000
SRQ - SWR command
00000000...00000000
SA
00000000...00000000
00000000...00000000
1111
SIO0
SIO1
SD
SD
SINT
SINT
Each packet is repeated
from SIO0 to SIO1
SRQ - SWR command
SA
Figure 19-2 Serial Read (SRD) Transaction Control Register
T
T
T
T
68
T
20
36
52
4
SCK
1
0
1
0
1
0
1
0
CMD
next transaction
00000000...00000000
11110000
00000000...00000000
SRQ - SRD command
00000000...00000000
SA
00000000...00000000
1111
controller drives
0 on SIO0
addressed RDRAM devices
0/SD15..SD0/0 on SIO0
SIO
SIO
0
1
0
0
SINT
SD
0
non addressed RDRAMs pass
First 3 packets are repeated
from SIO0 to SIO1
0/SD15..SD0/0 from SIO1 to SIO0
0
SRQ - SRD command
SA
SINT
SD
32
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
20. Control Register Packets
Figure 20-1 SETR, CLRR, SETF Transaction
Table 20-1 summarizes the formats of the four packet
types for control register transactions. Table 20-2
summarizes the fields that are used within the packets.
Figure 20-1 shows the transaction format for the SETR,
CLRR, and SETF commands. These transactions consist
of a single SRQ packet, rather than four packets like the
SWR and SRD commands. The same framing sequence
on the CMD input is used, however.
T
T
20
4
1
0
1
0
1
0
1
0
SCK
CMD
SIO0
SIO1
1111 0000
00000000...00000000
SRQ packet - SETR/CLRR/SETF
The packet is repeated
from SIO0 to SIO1
SRQ packet - SETR/CLRR/SETF
Table 20-1 Control Register Packet Formats
SCK
SIO0 or
SIO1
SIO0 or
SIO1
SIO0 or
SIO1
SIO0 or
SIO1
SCK
SIO0 or
SIO1
SIO0 or
SIO1
SIO0 or
SIO1
SIO0 or
Cycle
Cycle
SIO1
for SRQ
for SA
for SINT
for SD
for SRQ
for SA
for SINT
for SD
0
1
2
3
4
5
6
7
rsrv
rsrv
0
0
0
0
0
0
0
0
SD15
SD14
SD13
SD12
SD11
SD10
SD9
8
SOP1
SA7
SA6
SA5
SA4
SA3
SA2
SA1
SA0
0
0
0
0
0
0
0
0
SD7
SD6
SD5
SD4
SD3
SD2
SD1
SD0
rsrv
rsrv
9
SOP0
rsrv
rsrv
10
11
12
13
14
15
SBC
rsrv
rsrv
SDEV4
SDEV3
SDEV2
SDEV1
SDEV0
rsrv
SA11
SA10
SA9
SA8
SDEV5
SOP3
SOP2
SD8
Table 20-2 Field Description for Control Register Packets
Field
rsrv
Description
Reserved. Should be driven as “0” by controller.
SOP3..SOP0
0000 - SRD. Serial read of control register {SA11..SA0} of RDRAM device {SDEV5..SDEV0}.
0001 - SWR. Serial write of control register {SA11..SA0} of RDRAM device {SDEV5..SDEV0}.
0010 - SETR. Set Reset bit, all control registers assume their reset values. Note1 16 tSCYCLE delay
until CLRRNote2 command.
0100 - SETF. Set fast (normal) clock mode. 4 tSCYCLE delay until next command.
1011 - CLRR. Clear Reset bit, all control registers retain their reset values. Note1 4 tSCYCLE delay until next
command.
1111 - NOP. No serial operation.
0011, 0101 – 1010, 1100 – 1110 – RSRV. Reserved encodings.
SDEV5..SDEV0
Serial device. Compared to SDEVID5..SDEVID0 field of INIT control register field to select the RDRAM
device to which the transaction is directed.
SBC
Serial broadcast. When set, RDRAM devices ignore {SDEV5..SDEV0} for RDRAM device selection.
Serial address. Selects which control register of the selected RDRAM device is read or written.
SA11..SA0
SD15..SD0
Serial data. The 16 bits of data written to or read from the selected control register of the selected RDRAM
device.
Notes 1 The SETR and CLRR commands must always be applied in two successive transactions to RDRAM devices; i.e. they
may not be used in isolation. This is called “SETR/CLRR Reset”.
2 A minimum gap equal to the larger of (16•tSCYCLE, 2816•tCYCLE) must be inserted between a SETR/CLRR command pair.
33
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
21. Initialization
Figure 21-1 SIO Pin Reset Sequence
T
T
16
0
1
0
1
0
1
0
1
0
SCK
CMD
SIO0
SIO1
00001100
00000000...00000000
0000000000000000
The packet is repeated
from SIO0 to SIO1
0000000000000000
Initialization refers to the process that a controller must go through after power is applied to the system or the system
is reset. The controller prepares the RDRAM sub-system for normal Channel operation by (primarily) using a
sequence of control register transactions on the serial CMOS pins. The following steps outline the sequence seen by
the various memory subsystem components (including the RDRAM components) during initialization. This sequence
is available in the form of reference code. Contact Rambus Inc. for more information.
1.0 Start Clocks
This step calculates the proper clock frequencies for PClk (controller logic), SynClk (RAC block), RefClk (DRCG
component), CTM (RDRAM component), and SCK (SIO block).
2.0 RAC Initialization
This step causes the INIT block to generate a sequence of pulses which resets the RAC, performs RAC
maintainance operations, and measures timing intervals in order to ensure clock stability.
3.0 RDRAM device Initialization
This stage performs most of the steps needed to initialize the RDRAM devices. The rest are performed in stages
5.0, 6.0, and 7.0. All of the steps in 3.0 are carried out through the SIO block interface.
3.1/3.2 SIO Reset
This reset operation is performed before any SIO control register read or write transactions. It clears six
registers (TEST34, CCA, CCB, SKIP, TEST78, and TEST79) and places the INIT register into a special state
(all bits cleared except SKP and SDEVID fields are set to ones). SCK must be held low until SIO Reset.
3.3 Write TEST77 Register
The TEST77 register must be explicitly written with zeros before any other registers are read or written.
3.4 Write TCYCLE Register
The TCYCLE register is written with the cycle time tCYCLE of the CTM clock (for Channel and RDRAM devices)
in units of 64ps. The tCYCLE value is determined in stage 1.0.
3.5 Write SDEVID Register
The SDEVID (serial device identification) register of each RDRAM device is written with a unique address
value so that directed SIO read and write transactions can be performed. This address value increases from 0
to 31 according to the distance an RDRAM device is from the ASIC component on the SIO bus (the closest
RDRAM device is address 0).
34
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
3.6 Write DEVID Register
The DEVID (device identification) register of the RDRAM device is written with a unique address value so that
directed memory read and write transactions can be performed. This address value increases from 0 to 31.
The DEVID value is not necessarily the same as the SDEVID value. RDRAM devices are sorted into regions
of the same core configuration (number of bank, row, and column address bits and core type).
3.7 Write PDNX, PDNXA Registers
The PDNX and PDNXA registers are written with values that are used to measure the timing intervals
connected with an exit from the PDN (powerdown) power state.
3.8 Write NAPX Register
The NAPX register is written with values that are used to measure the timing intervals connected with an exit
from the NAP power state.
3.9 Write TPARM Register
The TPARM register is written with values which determine the time interval between a COL packet with a
memory read command and the Q packet with the read data on the Channel. The values written set the
RDRAM to the minimum value permitted for the system. This will be adjusted later in stage 6.0.
3.10 Write TCDLY1 Register
The TCDLY1 register is written with values which determine the time interval between a COL packet with a
memory read command and the Q packet with the read data on the Channel. The values written set the
RDRAM to the minimum value permitted for the system. This will be adjusted later in stage 6.0.
3.11 Write TFRM Register
The TFRM register is written with a value that is related to the tRCD parameter for the system. The tRCD
parameter is the time interval between a ROW packet with an activate command and the COL packet with a
read or write command.
3.12 SETR/CLRR
Each RDRAM device is given a SETR command and a CLRR command through the SIO block. This
sequence performs a second reset operation on the RDRAM devices.
3.13 Write CCA and CCB Registers
These registers are written with a value halfway between their minimum and maximum values. This shortens
the time needed for the RDRAM devices to reach their steady-state current control values in stage 5.0.
3.14 Powerdown Exit
The RDRAM devices are in the PDN power state at this point. A broadcast PDNExit command is performed
by the SIO block to place the RDRAM devices in the RLX (relax) power state in which they are ready to
receive ROW packets.
3.15 SETF
Each RDRAM device is given a SETF command through the SIO block. One of the operations performed by
this step is to generate a value for the AS (autoskip) bit in the SKIP register and fix the RDRAM device to a
particular read domain.
35
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
4.0 Controller Configuration
This stage initializes the controller block. Each step of this stage will set a field of the ConfigRMC[63:0] bus to the
appropriate value. Other controller implementations will have similar initialization requirements, and this stage
may be used as a guide.
4.1 Initial Read Data Offset
The ConfigRMC bus is written with a value which determines the time interval between a COL packet with a
memory read command and the Q packet with the read data on the Channel. The value written sets RMC.d1
to the minimum value permitted for the system. This will be adjusted later in stage 6.0.
4.2 Configure Row/Column Timing
This step determines the values of the tRAS,MIN , tRP,MIN , tRC,MIN , tRCD,MIN , tRR,MIN , and tPP,MIN RDRAM timing
parameters that are present in the system. The ConfigRMC bus is written with values that will be compatible
with all RDRAM devices that are present.
4.3 Set Refresh Interval
This step determines the values of the tREF,MAX RDRAM timing parameter that are present in the system. The
ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.
4.4 Set Current Control Interval
This step determines the values of the tCCTRL,MAX RDRAM timing parameter that are present in the system.
The ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.
4.5 Set Slew Rate Control Interval
This step determines the values of the tTEMP,MAX RDRAM timing parameter that are present in the system. The
ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.
4.6 Set Bank/Row/Col Address Bits
This step determines the number of RDRAM bank, row, and column address bits that are present in the
system. It also determines the RDRAM core types (independent, doubled, or split) that are present. The
ConfigRMC bus is written with a value that will be compatible with all RDRAM devices that are present.
5.0 RDRAM Current Control
This step causes the INIT block to generate a sequence of pulses which performs RDRAM maintenance
operations.
6.0 RDRAM Core, Read Domain Initialization
This stage completes the RDRAM device initialization
6.1 RDRAM Core Initialization
A sequence of 192 memory refresh transactions is performed in order to place the cores of all RDRAM
devises into the proper operating state.
6.2 RDRAM Read Domain Initialization
A memory write and memory read transaction is performed to each RDRAM device to determine which read
domain each RDRAM device occupies. The programmed delay of each RDRAM device is then adjusted so
the total RDRAM read delay (propagation delay plus programmed delay) is constant. The TPARM and
TCDLY1 registers of each RDRAM device are rewritten with the appropriate read delay values. The
ConfigRMC bus are also rewritten with an updated value.
36
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
7.0 Other RDRAM Register Fields
This stage rewrites the INIT register with the final values of the LSR, NSR, and PSR fields.
In essence, the controller must read all the read-only configuration registers of all RDRAM devices (or it must
read the SPD device present on each RIMM), it must process this information, and then it must write all the read-
write registers to place the RDRAM devices into the proper operating mode.
Initialization Note :
1. During the initialization process, it is necessary for the controller to perform 128 current control operations
(3xCAL, 1xCAL/SAM) and one temperature calibrate operation (TCEN/TCAL) after reset or after powerdown
(PDN) exit.
2. The behavior of EDR2518ABSE at initialization is as follows. It is distinguished by the "S28IECO" bit in the
SPD.
S28IECO=1: Upon powerup, the device enters PDN state. The serial operations SETR, CLRR, and SETF
require a SDEVID match.
See the document detailing the reference initialization procedure for more information on how to handle this in
a system.
3. After the step of equalizing the total read delay of the RDRAM device has been completed (i.e. after the
TCDLY0 and TCDLY1 fields have been written for the final time), a single final memory read transaction
should be made to the RDRAM device in order to ensure that the output pipeline stages have been cleared.
4. The SETF command (in the serial SRQ packet) should only be issued once during the Initialization process,
as should the SETR and CLRR commands.
5. The CLRR command (in the serial SRQ packet) leaves some of the contents of the memory core in an
indeterminate state.
37
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
22. Control Register Summary
Table 22-1 summarizes the RDRAM control registers. Detail is provided for each control register in Figure 22-1.
Read-only bits which are shaded gray are unused and return zero. Read-write bits which are shaded gray are
reserved and should always be written with zero. The RIMM SPD Application Note (DL-0054) of Rambus Inc.
describes additional read-only configuration registers which are present on Direct RIMMs.
The state of the register fields are potentially affected by the IO Reset operation or the SETR/CLRR operation. This
is indicated in the text accompanying each register diagram.
Table 22-1 Control Register Summary (1/2)
SA11..SA0 Register
Field
SDEVID
PSX
read-write/ read-only
read-write, 6 bits
read-write, 1 bit
read-write, 1 bit
read-write, 1 bit
read-write, 1 bit
read-write, 1 bit
read-only, 1 bit
read-write, 1 bit
read-write, 1 bit
read-write, 16 bits
read-only, 3 bits
read-only, 1 bit
read-only, 6 bits
read-only, 6 bits
read-only, 1 bit
Description
02116
INIT
Serial device ID. Device address for control register read/write.
Power select exit. PDN/NAP exit with device addr on DQA5..0.
SIO repeater. Used to initialize RDRAM devices.
NAP self-refresh. Enables self-refresh in NAP mode.
PDN self-refresh. Enables self-refresh in PDN mode.
Low power self-refresh. Enables low power self-refresh.
Output undefined
SRP
NSR
PSR
LSR
X
DIS
RDRAM device disable.
IDM
Interleaved Device Mode enable. IDM = 0 for version 3 device.
Test register.
02216
02316
TEST34
CNFGA
TEST34
REFBIT
DBL
Refresh bank bits. Used for multi-bank refresh.
Double. Specifies doubled-bank architecture.
Manufacturer version. Manufacturer identification number.
Protocol version. Specifies version of Direct protocol supported.
Byte. Specifies an 8-bit or 9-bit byte size.
MVER
PVER
BYT
02416
CNFGB
DEVTYP read-only, 3 bits
Device type. Device can be RDRAM device or some other device
category.
read-only, 1 bit
read-only, 6 bits
read-only, 6 bits
read-write, 5 bits
read-write, 4 bits
read-write, 9 bits
read-write, 7 bits
read-write, 2 bits
read-write, 7 bits
read-write, 2 bits
read-write, 5 bits
read-write, 5 bits
read-write, 1 bit
read-write, 13 bits
Split-core. Each core half is an individual dependent core.
SPT
Core organization. Bank, row, column address field sizes.
Stepping version. Mask version number.
CORG
SVER
DEVID
REFB
REFR
CCA
04016
04116
04216
04316
DEVID
REFB
REFR
CCA
Device ID. Device address for memory read/write.
Refresh bank. Next bank to be refreshed by self-refresh.
Refresh row. Next row to be refreshed by REFA, self-refresh.
Current control A. Controls IOL output current for DQA.
Asymmetry control. Controls asymmetry of VOL/VOH swing for DQA.
Current control B. Controls IOL output current for DQB.
Asymmetry control. Controls asymmetry of VOL/VOH swing for DQB.
NAP exit. Specifies length of NAP exit phase A.
ASYMA
CCB
04416
04516
CCB
ASYMB
NAPXA
NAPX
DQS
NAPX
NAP exit. Specifies length of NAP exit phase A + phase B.
DQ select. Selects CMD framing for NAP/PDN exit.
PDN exit. Specifies length of PDN exit phase A.
04616
PDNXA
PDNXA
38
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Table 22-1 Control Register Summary (2/2)
SA11..SA0 Register
Field
PDNX
read-write/ read-only
read-write, 13 bits
read-write, 2 bits
read-write, 2 bits
Description
PDN exit. Specifies length of PDN exit phase A + phase B.
04716
04816
PDNX
TPARM TCAS
TCLS
tCAS-C core parameter. Determines tOFFP datasheet parameter.
tCLS-C core parameter. Determines tCAC and tOFFP parameters.
tCDLY0-C core parameter. Programmable delay for read data.
tFRM-C core parameter. Determines ROW - COL packet framing interval.
TCDLY0 read-write, 3 bits
TFRM read-write, 4 bits
04916
04a16
04c16
04b16
TFRM
t
CDLY-1 core parameter. Programmable delay for read data.
TCDLY1 TCDLY1 read-write, 3 bits
TCYCLE TCYCLE read-write, 14 bits
tCYCLE datasheet parameter. Specifies cycle time in 64ps units.
Autoskip value established by the SETF command.
Manual skip enable. Allows the MS value to override the AS value.
Manual skip value.
SKIP
AS
read-only, 1 bit
MSE
MS
read-write, 1 bit
read-write, 1 bit
read-write, 16 bits
read-write, 16 bits
read-write, 16 bits
read-write, 2bits
04d16-
04e16-
04f16-
05516
TEST77 TEST77
TEST78 TEST78
TEST79 TEST79
Test register. Write with zero after SIO reset.
Test register. Do not read or write after SIO reset.
Test register. Do not read or write after SIO reset.
tCPS-C core parameter. Determines tOFFP parameters. (Version 3 only)
Vendor-specific test registers. Do not read or write after SIO reset.
TCPS
TCPS
08016-Off16 reserved reserved vendor-specific
39
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (1/7)
Control Register : INIT
Address : 02116
15
14
13
12
11
0
10
9
8
7
6
5
0
4
3
2
1
0
SDE
VID5
IDM
DIS
XNote
LSR
PSR
NSR
SRP
PSX
SDEVID4..0
Read/write register.
Reset values are undefined except as affected by SIO Reset as noted below. SETR/CLRR Reset does not affect this register.
Note Read-only bit. Output undefined.
Reset
value
Field
Description
Interleaved Device Mode enable. IDM = 0 for version 3 device.
IDM
Serial Device Identification. Compared to SDEVID5..0 serial address field of serial request packet for register
read/write transactions. This determines which RDRAM device is selected for the register read or write
operation.
SDEVID5..0
3f16
RDRAM disable. DIS=1 causes RDRAM device to ignore NAP/PDN exit sequence, DIS=0 permit normal
operation. This mechanism disables an RDRAM device.
DIS
0
Low Power Self-Refresh. This function is not supported. LSR value must be 0.
LSR
PSR
NSR
SRP
PSX
0
0
0
1
PDN Self-Refresh. PSR=1 enables self-refresh in PDN mode. PSR can’t be set while in PDN mode.
NAP Self-Refresh. NSR=1 enables self-refresh in NAP mode. NSR can’t be set while in NAP mode.
SIO Repeater. Controls value on SIO1; SIO1=SIO0 if SRP=1, SIO1=1 if SRP=0.
Power Exit Select. PDN and NAP are exited with (=0) or without (=1) a device address on the DQA5..0 pins.
PDEV5 (on DQA5) selectes broadcast (1) or directed (0) exit. For a dircted exit, PDEV4..0 (on DQA4..0) is
compared to DEVID4..0 to select a device.
Control Register : CNFGA
Address : 02316
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PVER5..0=000001
MVER5..0=mmmmmm
DBL1
REFBIT2..0=101
Read only register.
Field
Description
Protocol Version. Specifies the Direct Protocol version used by this device:
0 – Reserved
PVER5..0
1 – Version 1
2 – Version 2 (version 1 + IDM)
3 – Version 3 (version 1 + programmable tCPS)
MVER5..0 Manufacturer Version. Specifies the manufacturer identification number.
Doubled-Bank. DBL=1 means the device uses a doubled-bank architecture with adjacent-bank dependency. DBL=0
means no dependency.
DBL
Refresh Bank Bits. Specifies the number of bank address bits used by REFA and REFP commands.
Permits multi-bank refresh in future RDRAM devices.
REFBIT2..0
Caution In RDRAM devices with protocol version 1 PVER[5:0] =000001, the range of the PDNX field (PDNX[2:0] in the
PDNX register) may not be large enough to specify the location of the restricted interval in Figure 23-3. In this
case, the effective tS4 parameter must increase and no row or column packets may overlap the restricted interval.
See Figure 23-3 and Timing conditions table.
40
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (2/7)
Control Register : CNFGB
Address : 02416
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
SVER5..0=ssssss
CORG4..0=01000
SPT0
DEVTYP2..0=000
BYTB
Read only register.
Field
Description
Stepping version. Specifies the mask version number of this device.
SVER5..0
CORG4..0
SPT
Core organization. This field specifies the number of bank (5 bits), row (9 bits), and column (7 bits) address bits.
Split-core. SPT=1 means the core is split, SPT=0 means it is not.
DEVTYP2..0 Device type. DEVTYP=000 means that this device is an RDRAM device.
BYT Byte width. B=1 means the device reads and writes 9-bit memory bytes.B=0 means 8 bits.
Control Register : TEST34
Address : 02216
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
Write only register.
Reset values of TEST34 is zero (from SIO Reset).
This register are used for testing purposes. It must not be read or written after SIO Reset.
Control Register : DEVID
Address : 04016
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
3
2
1
0
DEVID4..0
Read/write register.
Reset value is undefined.
Field
Description
Device Identification register. DEVID4..DEVID0 is compared to DR4..DR0, DC4..DC0, and DX4..DX0 fields for all
memory read or write transactions. This determines which RDRAM device is selected for the memory read or write
transaction.
DEVID4..0
41
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (3/7)
Control Register : REFB
Address : 04116
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
3
2
1
0
REFB4..0
Read/write register.
Reset
value
Field
Description
Reset value is zero (from SETR/CLRR). Refresh Bank Register. REFB4..REFB0 is the bank that will be
refreshed next during self-refresh. REFB4..0 is incremented after each self-refresh activate and precharge
operation pair.
0
REFB4..0
Control Register : REFR
Address : 04216
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
7
6
5
4
3
2
1
0
REFR8..0
Read/write register.
Reset
value
Field
Description
Reset value is zero (from SETR/CLRR). Refresh Row register. REFR8..REFR0 is the row that will be
refreshed next by the REFA command or by self-refresh. REFR8..0 is incremented when BR4..0=11111 for
the REFA command. REFR8..0 is incremented when REFB4..0=11111 for self-refresh.
0
REFR8..0
Control Register : CCA
Address : 04316
15
14
13
12
11
10
9
0
8
7
6
5
4
3
2
1
0
ASYM
A0
0
0
0
0
0
0
0
CCA6..0
Read/write register.
Reset value is zero (from SETR/CLRR or SIO Reset).
Reset
value
Field
Description
ASYMA0 control the asymmetry of the VOL/VOH voltage swing about the VREF reference voltage for the
DQA8..0 pins.
0
ASYMA0
Current Control A. Controls the IOL output current for the DQA8..DQA0 pins.
CCA6..0
Control Register : CCB
Address : 04416
15
14
13
12
11
10
9
0
8
7
6
5
4
3
2
1
0
ASYM
B0
0
0
0
0
0
0
0
CCB6..0
Read/write register.
Reset value is zero (from SETR/CLRR or SIO Reset).
Reset
value
Field
Description
ASYMB0 control the asymmetry of the VOL/VOH voltage swing about the VREF reference voltage for the
DQB8..0 pins.
0
ASYMB0
CCB6..0
Current Control B. Controls the IOL output current for the DQB8..DQB0 pins.
42
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (4/7)
Control Register : NAPX
Address : 04516
15
0
14
0
13
0
12
0
11
0
10
9
8
7
6
5
4
3
2
1
0
DQS
NAPX4..0
NAPXA4..0
Read/write register.
Reset value is 052516 (SIOReset).
Note tSCYCLE is tCYCLE1 (SCK cycle time).
Field Description
DQS
DQ Select. This field specifies the number of SCK cycles (0 ≥ 0.5 cycles, 1 ≥ 1.5 cycles) between the CMD pin
framing sequence and the device selection on DQ5..0. see Figure 23-4. This field must be written with a ”1” for this
RDRAM.
Nap Exit Phase A plus B. This field specifies the number of SCK cycles during the first plus second phases for exiting
NAPX4..0
NAP mode. It must satisfy:
NAPX•tSCYCLE ≥ NAPXA•tSCYCLE+tNAPXB,MAX
Do not set this field to zero.
Nap Exit Phase A. This field specifies the number of SCK cycles during the first phase for exiting NAP mode. It must
NAPXA4..0
satisfy:
NAPXA•tSCYCLE ≥ tNAPXA,MAX
Do not set this field to zero.
Control Register : PDNXA
Address : 04616
15
0
14
0
13
0
12
11
10
9
8
7
6
5
4
3
2
1
0
PDNXA12..0
Read/write register.
Reset value is 000816 (SIOReset).
Field
Description
PDN Exit Phase A. This field specifies the number of (64•SCK cycle) units during the first phase for exiting PDN
PDNXA4..0
mode. It must satisfy:
PDNXA•64•tSCYCLE ≥ tPDNXA,MAX
Do not set this field to zero.
Note – only PDNXA4..0 are implemented.
Note – tSCYCLE is tCYCLE1 (SCK cycle time).
Control Register : PDNX
Address : 04716
15
0
14
0
13
0
12
11
10
9
8
7
6
5
4
3
2
1
0
PDNX12..0
Read/write register.
Reset value is 000716 (SIOReset).
Field
Description
PDN Exit Phase A puls B. This field specifies the number of (256•SCK cycle) units during the first plus second phases
for exiting PDN mode. It should satisfy:
PDNX2..0
PDNX•256•tSCYCLE ≥ PDNXA•64•tSCYCLE+tPDNXB,MAX
It this equation can’t be satisfied, then the maximum PDNX value should be written, and the tS4 / tH4 timing window will
be modified (see Figure 23-4).
Do not set this field to zero.
Note – only PDNX2..0 are implemented.
Note – tSCYCLE is tCYCLE1 (SCK cycle time).
43
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (5/7)
Control Register : TPARM
Address : 04816
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
5
4
3
2
1
0
TCDLY0
TCLS
TCAL
Read/write register.
Reset value is undefined.
Field
Description
Specifies the tCDLY0-C core parameter in tCYCLE units. This adds a programmable delay to Q (read data) packets,
permitting round trip read delay to all device to be equalized. This field may be written with the values “011” (3•tCYCLE)
through “101” (5•tCYCLE).
TCDLY0
Specifies the tCLS-C core parameter in tCYCLE units. Should be “10” (2•tCYCLE).
TCLS1..0
TCAS1..0
Specifies the tCAS-C core parameter in tCYCLE units. This should be “10” (2•tCYCLE).
The equations relating the core parameters to the datasheet parameters follow:
tCAS-C=2•tCYCLE
tCLS-C=2•tCYCLE
tCPS-C=1•tCYCLE
tOFFP=tCPS-C + tCAS-C + tCLS-C - 1•tCYCLE
=4•tCYCLE
tRCD=tRCD-C + 1•tCYCLE – tCLS-C
=tRCD-C - 1•tCYCLE
tCAC=3•tCYCLE + tCLS-C + tCDLY0-C + tCDLY1-C (see table below programming ranges)
TCDLY0
011
tCDLY0-C
3•tCYCLE
3•tCYCLE
4•tCYCLE
3•tCYCLE
4•tCYCLE
4•tCYCLE
5•tCYCLE
TCDLY1
000
tCDLY1-C
0•tCYCLE
1•tCYCLE
0•tCYCLE
2•tCYCLE
1•tCYCLE
2•tCYCLE
2•tCYCLE
tCAC@tCYCLE=2.50 ns tCAC@tCYCLE=1.875 ns
8•tCYCLE
9•tCYCLE
9•tCYCLE
10•tCYCLE
10•tCYCLE
11•tCYCLE
12•tCYCLE
8•tCYCLENote
not allowed
9•tCYCLE
011
001
100
000
not allowed
10•tCYCLE
11•tCYCLE
12•tCYCLE
011
010
100
001
100
010
101
010
Note Used only for device bins that support tCAC = 8
Control Register : TFRM
Address : 04916
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
0
3
2
1
0
TFRM3..0
Read/write register.
Reset value is undefined.
Field
Description
Specifies the position of the framing point in tCYCLE units. This value must be greater than or equal to the tFRM,MIN
parameter. This is the minimum offset between a ROW packet (which places a device at ATTN) and the first COL
packet (directed to that device) which must be framed. This field may be written with the value “0111” (7•tCYCLE)
through “1010” (10•tCYCLE). TFRM is usually set to the value which matches the largest tRCD,MIN parameter (modulo
4•tCYCLE) that is present in an RDRAM device in the memory system. Thus, if an RDRAM device with
tRCD,MIN=11•tCYCLE were present, then TFRM would be programmed to 7•tCYCLE.
TFRM3..0
44
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (6/7)
Control Register : TCDLY1
Address : 04a16
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
1
0
TCDLY1
Read/write register.
Reset value is undefined.
Field
Description
Specifies the value of the tCDLY1-C core parameter in tCYCLE units. This adds a programmable delay to Q (read data)
packets, permitting round trip read to delay all devices to be equalized. This field may be written with the values “000”
(0•tCYCLE) through “010” (2•tCYCLE). Refer to TPARM Register for more details.
TCDLY1
Control Register : SKIP
Address : 04b16
15
0
14
13
0
12
11
10
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
0
AS
MSE
MS
Read/write register (except AS field).
Reset value is zero (SIO Reset).
Field
MS
Description
Manual skip (MS=1 corresponds to the early Q(a1) packet and AS=0 to the Q(a1) packet one tCYCLE later for the four
uncertain cases in Figure34-1.).
Manual skip enable (0=auto, 1=manual ).
MSE
AS
Autoskip. Read-only value determined by autoskip circuit and stored when SETF serial command is received by
RDRAM during initialization. In Figure34-1, AS=1 corresponds to the early Q(a1) packet and AS=0 to the Q(a1) packet
one tCYCLE later for the four uncertain cases.
Control Register : TCYCLE
Address : 04c16
15
0
14
0
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TCYCLE13..0
Read/write register.
Reset value is undefined.
Field
Description
Specifies the value of the tCYCLE datasheet parameter in 64ps units. For the tCYCLE,MIN of 2.50 ns (2500ps), this field
TCYCLE13..0
should be written with the value “0002716” (39•64ps).
45
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 22-1 Control Registers (7/7)
Control Register : TEST77
Control Register : TEST78
Control Register : TEST79
Address : 04d16
Address : 04e16
Address : 04f16
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
Read/write register.
These registers must only be used for testing purposes.
Reset
value
Field
Description
It must be written with zero after SIO reset.
TEST77
TEST78
TEST79
Reset value is zero (SIO Reset). Do not read or written after SIO reset.
Reset value is zero (SIO Reset). Do not read or written after SIO reset.
0
0
Control Register : TCPS
Address : 05516
15
0
14
0
13
0
12
0
11
0
10
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
1
0
TCPS
Read/write register
Reset value is 000116 (SETR/CLRR).
Field
Description
Specifies the value pf the tCPS-C core parameter in tCYCLE units. This adds a programmable delay to tOFFP. This field
TCPS
may be written with the values “01” (1•tCYCLE) through “11” (3•tCYCLE). Refer to the Figure 22-1 (5/7).
Note This register is implemented (as stated above) in a version 3 device and unimplemented in a version 1, 2
device.
46
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
23. Power State Management
Table 23-1 summarizes the power states available to an RDRAM device. In general, the lowest power states have
the longest operational latencies. For example, the relative power levels of PDN state and STBY state have a ratio of
about 1:110, and the relative access latencies to get read data have a ratio of about 250:1.
PDN state is the lowest power state available. The information in the RDRAM core is usually maintained with self-
refresh; an internal timer automatically refreshes all rows of all banks. PDN has a relatively long exit latency because
the TCLK/RCLK block must resynchronize itself to the external clock signal.
NAP state is another low-power state in which either self-refresh or REFA-refresh are used to maintain the core.
See 24. Refresh for a description of the two refresh mechanisms. NAP has a shorter exit latency than PDN because
the TCLK/RCLK block maintains its synchronization state relative to the external clock signal at the time of NAP
entry. This imposes a limit (tNLIMIT) on how long an RDRAM device may remain in NAP state before briefly returning
to STBY or ATTN to update this synchronization state.
Table 23-1 Power State Summary
Power State Description
Blocks consuming power Power state Description
Blocks consuming power
PDN
Powerdown state.
Self-refresh
NAP
Nap state. Similar to
PDN except lower
wake-up latency.
Attention state.
Self-refresh or
REFA-refresh
TCLK/RCLK-Nap
REFA-refresh
STBY
Standby state.
Ready for ROW
packets.
REFA-refresh
ATTN
TCLK/RCLK
Ready for ROW and
COL packets.
TCLK/RCLK
ROW demux receiver
ROW demux receiver
COL demux receiver
REFA-refresh
ATTNR
Attention read state.
Ready for ROW and
COL packets.
REFA-refresh
ATTNW
Attention write state.
Ready for ROW and
COL packets.
TCLK/RCLK
TCLK/RCLK
ROW demux receiver
ROW demux receiver
Sending Q (read data) COL demux receiver
Ready for D (write data) COL demux receiver
packets.
DQ mux transmitter
Core power
packets.
DQ demux receiver
Core power
47
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 23-1 summarizes the transition conditions needed for moving between the various power states.
Figure 23-1 Power State Transition Diagram
automatic
automatic
ATTNR
ATTN
ATTNW
t
NLIMIT
NAPR
NAPR
NAP
PDEV.CMD•SIO0
PDNR
PDNR
Notation:
SETR/CLRR - SETR/CLRR Reset sequence in SRQ packet
PDNR - PDNR command in ROWR packet
NAPR - NAPR command in ROWR packet
RLXR - RLX command in ROWR packet
RLX - RLX command in ROWR,COLC,COLX packets
SIO0 - SIO0 input value
PDN
PDEV.CMD•SIO0
PDEV.CMD - (PDEV=DEVID)•(CMD=01)
ATTN - ROWA packet(non-broadcast) or ROWR packet
(non-broadcast) with ATTN command
SETR/CLRR
STBY
At initialization, the SETR/CLRR Reset sequence will put the RDRAM device into PDN state. The PDN exit
sequence involves an optional PDEV specification and bits on the CMD and SIOIN pins.
Once the RDRAM device is in STBY, it will move to the ATTN/ATTNR/ATTNW states when it receives a non-
broadcast ROWA packet or non-broadcast ROWR packet with the ATTN command. The RDRAM device returns to
STBY from these three states when it receives a RLX command. Alternatively, it may enter NAP or PDN state from
ATTN or STBY states with a NAPR or PDNR command in an ROWR packet. The PDN or NAP exit sequence
involves an optional PDEV specification and bits on the CMD and SIO0 pins. The RDRAM device returns to the
STBY state it was originally in when it first entered NAP or PDN.
An RDRAM device may only remain in NAP state for a time tNLIMIT. It must periodically return to ATTN or STBY.
The NAPRC command causes a napdown operation if the RDRAM device’s NCBIT is set. The NCBIT is not directly
visible. It is undefined on reset. It is set by a NAPR command to the RDRAM device, and it is cleared by an ACT
command to the RDRAM device. It permits a controller to manage a set of RDRAM devices in a mixture of power
states.
STBY state is the normal idle state of the RDRAM device. In this state all banks and sense amps have usually been
left precharged and ROWA and ROWR packets on the ROW pins are being monitored. When a non-broadcast
ROWA packet or non-broadcast ROWR packet(with the ATTN command) packet addressed to the RDRAM device is
seen, the RDRAM device enters ATTN state (see the right side of Figure 23-2). This requires a time tSA during which
the RDRAM device activates the specified row of the specified bank. A time TFRM•tCYCLE after the ROW packet, the
RDRAM device will be able to frame COL packets (TFRM is a control register field – see Figure 22-1(5/7) “TFRM
Register”). Once in ATTN state, the RDRAM device will automatically transition to the ATTNW and ATTNR states as
it receives WR and RD commands.
48
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Once the RDRAM device is in ATTN, ATTNW, or ATTNR states, it will remain there until it is explicitly returned to
the STBY state with a RLX command. A RLX command may be given in an ROWR, COLC, or COLX packet (see the
left side of Figure 23-2). It is usually given after all banks of the RDRAM device have been precharged; if other
banks are still activated, then the RLX command would probably not be given.
If a broadcast ROWA packet or ROWR packet (with the ATTN command) is received, the RDRAM device’s power
state doesn’t change. If a broadcast ROWR packet with RLXR command is received, the RDRAM device goes to
STBY.
Figure 23-2 STBY Entry (left) and STBY Exit (right)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11T12T13 T14 T1
T0T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11T12T13 T14 T15 T16
CTM/CFM
CTM/CFM
ROP=non-broadcast
ROWA or ROWR/ATTN
a0={d0, b0, r0}
a1={d1, b1, c1}
ROW2
..ROW0
ROW2
..ROW0
RLXR
ROP a0
No COL packets may be
placed in the three
indicated positions; i.e. at
COP a1
COP a1
COP a1
COL4
..COL0
COL4
..COL0
RLXC
RLXX
COP a1
XOP a1
COP a0
XOP a0
(TFRM-{1,2,3})•tCYCLE
.
A COL packet to device d0
(or any other device) is okay at
(TFRM)•tCYCLE
TFRM•tCYCLE
DQA8..0
DQB8..0
DQA8..0
DQB8..0
or later.
A COL packet to another device
(d1!=d0) is okay at
(TFRM-4)•tCYCLE
tAS
tSA
Power
State
Power
State
ATTN
STBY
STBY
ATTN
or earlier.
Figure 23-3 shows the NAP entry sequence (left). NAP state is entered by sending a NAPR command in a ROW
packet. A time tASN is required to enter NAP state (this specification is provided for power calculation purposes). The
clock on CTM/CFM must remain stable for a time tCD after the NAPR command.
Figure 23-3 NAP Entry (left) and PDN Entry (right)
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
1
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
1
2
3
5
6
7
9
10
13 14
0
4
8
12
1
2
3
5
6
7
9
10
13 14
0
4
8
12
CTM/CFM
CTM/CFM
a0={d0, b0, r0, c0}
a1={d1, b1, c1, c1}
tCD
tCD
No ROW or COL packets directed
to device d0 may overlap the
restricted interval. No broadcast
ROW packets may overlap
the quiet interval.
ROW2
..ROW0
ROW2
..ROW0
ROP a0
(NAPR)
ROP a0
(PDNR)
ROP a1
ROP a1
restricted
restricted
tNPQ
tNPQ
COL4
..COL0
COL4
..COL0
COP a0 restricted COP a1
XOP a0 XOP a1
COP a0 restricted COP a1
XOP a0 XOP a1
ROW or COL packets to a device
other than d0 may overlap the
restricted interval.
DQA8..0
DQB8..0
DQA8..0
DQB8..0
ROW or COL packets directed
to device d0 after the restricted
interval will be ignored.
tASN
ATTN/STBYNote
tASP
ATTN/STBY Note
Power
State
Power
State
NAP
PDN
Note The(eventual) NAP/PDN exit will be to the same ATTN/STBY state the RDRAM was in prior to NAP/PDN entry
The RDRAM device may be in ATTN or STBY state when the NAPR command is issued. When NAP state is
exited, the RDRAM device will return to the STBY. After a NAP exit, the RDRAM device may consume power as if it
is in ATTN state until a RLX command is received.
Figure 23-3 also shows the PDN entry sequence (right). PDN state is entered by sending a PDNR command in a
ROW packet. A time tASP is required to enter PDN state (this specification is provided for power calculation
purposes). The clock on CTM/CFM must remain stable for a time tCD after the PDNR command.
49
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
The RDRAM device may be in ATTN or STBY state when the PDNR command is issued. When PDN state is
exited, the RDRAM device will return to the STBY. After a PDX exit, the RDRAM device may consume power as if it
is in ATTN state until a RLX command is received. Also, the current- and slew-rate-control levels are re-established.
The RDRAM device’s write buffer must be retired with the appropriate COP command before NAP or PDN are
entered. Also, all the RDRAM device’s banks must be precharged before NAP or PDN are entered. The exception to
this is if NAP is entered with the NSR bit of the INIT register cleared (disabling self-refresh in NAP). The commands
for relaxing, retiring, and precharging may be given to the RDRAM device as late as the ROPa0, COPa0, and XOPa0
packets in Figure 23-3. No broadcast packets nor packets directed to the RDRAM device entering NAP or PDN may
overlay the quiet window. This window extends for a time tNPQ after the packet with the NAPR or PDNR command.
Figure 23-4 shows the NAP and PDN exit sequences. These sequences are virtually identical; the minor
differences will be highlighted in the following description.
Before NAP or PDN exit, the CTM/CFM clock must be stable for a time tCE. Then, on a falling and rising edge of
SCK, if there is a “01” on the CMD input, NAP or PDN state will be exited. Also, on the falling SCK edge the SIO0
input must be at a 0 for NAP exit and 1 for PDN exit.
If the PSX bit of the INIT register is 0, then a device PDEV5..0 is specified for NAP or PDN exit on the DQA5..0 pins.
This value is driven on the rising SCK edge 0.5 or 1.5 SCK cycles after the original falling edge, depending upon the
value of the DQS bit of the NAPX register. If the PSX bit of the INIT register is 1, then the RDRAM device ignores the
PDEV5..0 address packet and exits NAP or PDN when the wake-up sequence is presented on the CMD wire. The
ROW and COL pins must be quiet at a time tS4 / tH4 around the indicated falling SCK edge(timed with the PDNX or
NAPX register fields). After that, ROW and COL packets may be directed to the RDRAM device which is now in
STBY state.
Figure 23-5 shows the constraints for entering and exiting NAP and PDN states. On the left side, an RDRAM device
exits NAP state at the end of cycle T3. This RDRAM device may not re-enter NAP or PDN state for an interval of tNU0.
The RDRAM device enters NAP state at the end of cycle T13. This RDRAM device may not re-exit NAP state for an
interval of tNU1. The equations for these two parameters depend upon a number of factors, and are shown at the
bottom of the figure. NAPX is the value in the NAPX field in the NAPX register.
On the right side of Figure23-4, an RDRAM device exits PDN state at the end of cycle T3. The RDRAM device may
not re-enter PDN or NAP state for an interval of tPU0. The RDRAM device enters PDN state at the end of cycle T13
and may not re-exit PDN state for an interval of tPU1. The equations for these two parameters depend upon a number
of factors, and are shown at the bottom of the figure. PDNX is the value in the PDNX field in the PDNX register.
50
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 23-4 NAP and PDN Exit
T
T1 T2 T3
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
T
T21 T22 T23
20
T
T25 T26 T27
24
T
T29 T30 T31
28
T34 T35
T
T37 T38 T39
36
T
T41 T42 T43
40
T
T45 T46 T47
44
0
4
CTM/CFM
If PSX=1 in Init register,
then NAP/PDN exit is
broadcast (no PDEV field).
ROW2
..ROW0
No ROW packets may overlap
the restricted interval
restricted
ROP
ROP
No COL packets may overlap
the restricted interval if device
PDEV is exiting the NAP or
PDN states
tH4
tS4
COL4
..COL0
COP
XOP
COP
XOP
restricted
tS3 tH3
tS3 tH3
tH4
tS4
Note 2
PDEV5..0
Note 2
PDEV5..0
DQA8..0
DQB8..0
tCE
DQS=0 Note 2,3
DQS=1Note 2
SCK
CMD
SIO0
SIO1
0
1
Effective hold becomes
Note 1
0/1
t
H4’ = tH4 +[PDNXA•64•tSCYCLE + tPDNXB,MAX] - [PDNX•256•tSCYCLE
]
if [PDNX•256•tSCYCLE] < [PDNXA•64•tSCYCLE + tPDNXB,MAX].
The packet is repeated
from SIO0 to SIO1
Note 1
0/1
(NAPX•tSCYCLE)/(256•PDNX•tSCYCLE
STBY/ATTN
)
Power
State
NAP/PDN
Note 2
Note 2
DQS=1
DQS=0
Notes 1. Use 0 for NAP exit, 1 for PDN exit
2. Device selection timing slot is selected by DQS field of NAPX register. The PSX field determines the start of NAP/PDN exit.
3. The DQS field must be written with “1” for this RDRAM.
Figure 23-5 NAP Entry/Exit Windows (left) and PDN Entry/Exit Windows (right)
T
T1 T2 T3
T
T5 T6 T7
T
T9 T10 T11
T
T13 T14 T15
12
T
T17 T18 T19
T
T1 T2 T3
T
T5 T6 T7
T T9 T10 T11
8
T
T13 T14 T15
12
T
T17 T18 T19
16
0
4
8
16
0
4
CTM/CFM
CTM/CFM
PDN entry
PDNR
NAP entry
NAPR
ROW2
..ROW0
ROW2
..ROW0
SCK
SCK
PDN exit
0
NAP exit
CMD
CMD
0
0
0
1
1
tNU0
no entry to NAP or PDN
tNU1
no exit
tPU0
no entry to NAP or PDN
tPU1
no exit
tPU0 =5•tCYCLE +(2+256•PDNX)•tSCYCLE
tNU0 =5•tCYCLE +(2+NAPX)•tSCYCLE
if PSR=0
if PSR=1
t PU1 =8•tCYCLE - (0.5•t SCYCLE
=23•tCYCLE
)
t NU1 =8•tCYCLE - (0.5•tSCYCLE
=23•tCYCLE
)
if NSR=0
if NSR=1
51
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
24. Refresh
RDRAM devices, like any other DRAM technology, use volatile storage cells which must be periodically refreshed.
This is accomplished with the REFA command. Figure 24-1 shows an example of this.
The REFA command in the transaction is typically a broadcast command (DR4T and DR4F are both set in the
ROWR packet), so that in all devices bank number Ba is activated with row number REFR, where REFR is a control
register in the RDRAM device. When the command is broadcast and ATTN is set, the power state of the RDRAM
devices (ATTN or STBY) will remain unchanged. The controller increments the bank address Ba for the next REFA
command. When Ba is equal to its maximum value, the RDRAM device automatically increments REFR for the next
REFA command.
On average, these REFA commands are sent once every tREF / 2BBIT+RBIT (where BBIT are the number of bank address
bits and RBIT are the number of row address bits) so that each row of each bank is refreshed once every tREF
interval.
The REFA command is equivalent to an ACT command, in terms of the way that it interacts with other packets (see
Table 6-1). In the example, an ACT command is sent after tRR to address b0, a different (non-adjacent) bank than the
REFA command.
A second ACT command can be sent after a time tRC to address c0, the same bank (or an adjacent bank) as the
REFA command.
Note that a broadcast REFP command is issued a time tRAS after the initial REFA command in order to precharge
the refreshed bank in all RDRAM devices. After a bank is given a REFA command, no other core operations(activate
or precharge) should be issued to it until it receives a REFP.
It is also possible to interleave refresh transactions (not shown). In the figure, the ACT b0 command would be
replaced by a REFA b0 command. The b0 address would be broadcast to all devices, and would be {Broadcast,
Ba+2,REFR}. Note that the bank address should skip by two to avoid adjacent bank interference. A possible bank
incrementing pattern would be: {12, 10, 5, 3, 0, 14, 9, 7, 4, 2, 13, 11, 8, 6, 1, 15, 28, 26, 21, 19, 16, 30, 25, 23, 20, 18,
29, 27, 24, 22, 17, 31}. Every time bank 31 is reached, a REFA command would automatically increment the REFR
register.
A second refresh mechanism is available for use in PDN and NAP power states. This mechanism is called self-
refresh mode. When the PDN power state is entered, or when NAP power state is entered with the NSR control
register bit set, then self-refresh is automatically started for the RDRAM device.
Self-refresh uses an internal time base reference in the RDRAM device. This causes an activate and precharge to
be carried out once in every tREF / 2BBIT+RBIT interval. The REFB and REFR control registers are used to keep track of
the bank and row being refreshed.
Before a controller places an RDRAM device into self-refresh mode, it should perform REFA/REFP refreshes until
the bank address is equal to the last value (this will be 31 for all sequence). This ensures that no rows are skipped.
Likewise, when a controller returns an RDRAM device to REFA/REFP refresh, it should start with the first bank
address value (12 for the example sequence).
Figure 24-2 illustrates the requirement imposed by the tBURST parameter. After PDN or NAP (when self-refresh is
enabled) power states are exited, the controller must refresh all banks of the RDRAM device once during the interval
tBURST after the restricted interval on the ROW and COL buses. This will ensure that regardless of the state of self-
refresh during PDN or NAP, the tREF, MAX parameter is met for all banks. During the tBURST interval, the banks may be
refreshed in a single burst, or they may be scattered throughout the interval. Note that the first and last banks to be
refreshed in the tBURST interval are numbers 12 and 31, in order to match the example refresh sequence.
52
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 24-1 REFA/REFP Refresh Transaction Example
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T
T
T
T
19 T
T
T
T
23 T
T
T
T
27T
T
T
T
31 T
T
T
T
35 T
T
T
T
T
43T
T T T
45 46 47
44
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37
41 42
0
4
8
12
16
20
24
28
32
36
0
CTM/CFM
tRC
ROW2
REFA a0
ACT b0
REFP a1
ACT c0
REFA d0
..ROW0
tRAS
tRP
COL4
..COL0
tRR
t
REF/2BBIT+RBIT
DQA8..0
DQB8..0
BBIT = #bank address bits
RBIT = #row address bits
REFB = REFB3..REFB0
REFR = REFR8..REFR0
Transaction a: REFA
Transaction b: xx
Transaction c: xx
a0 = {Broadcast,Ba,REFR}
b0 = {Db, /={Ba,Ba+1,Ba-1}, Rb}
c0 = {Dc, ==Ba, Rc}
a1 = {Broadcast,Ba}
Transaction d: REFA
d0 = {Broadcast,Ba+1,REFR}
Figure 24-2 NAP/PDN Exit - tBURST Requirement
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
T
T
27T28
T
T
T32
T
T
T
35 T36
T
T
T
39 T40
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
9
10
13
17 18
21 22
25 26
29
33 34
37 38
41 42
CTM/CFM
tBURST
ROW2
..ROW0
restricted
ROP
REFA b12
REFA b31
ROP
32 bank refresh sequence
t
t
S4 H4
COL4
..COL0
COP
XOP
COP
XOP
restricted
t
t
S4 H4
DQA8..0
DQB8..0
t
CE
SCK
CMD
SIO0
SIO1
0
1
Note 1
0/1
The packet is repeated
from SIO0 to SIO1
Note 1
0/1
(NAPX•tSCYCLE)/(256•PDNX•tSCYCLE
STBY
)
Power
State
NAP/PDN
Note 2
Note 2
DQS=1
Notes 1. Use 0 for NAP exit, 1 for PDN exit
2. Device selection timing slot is selected by DQS field of NAPX register
DQS=0
53
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
25. Current and Temperature Control
Figure 25-1 shows an example of a transaction which performs current control calibration. It is necessary to
perform this operation once to every RDRAM device in every tCCTRL interval in order to keep the IOL output current in
its proper range.
This example uses four COLX packets with a CAL command. These cause the RDRAM device to drive four
calibration packets Q(a0) a time tCAC later. An offset of tRDTOCC must be placed between the Q(a0) packet and read
data Q(a1) from the same device. These calibration packets are driven on the DQA4..3 and DQB4..3 wires. During
current calibration the valu of DQA5 is undefined. The remaining DQA and DQB wires are not used during these
calibration packets. The last COLX packet also contains a SAM command (concatenated with the CAL command).
The RDRAM device samples the last calibration packet and adjusts its IOL current value.
Unlike REF commands, CAL and SAM commands cannot be broadcast. This is because the calibration packets
from different devices would interfere. Therefore, a current control transaction must be sent every tCCTRL /N, where N
is the number of RDRAM devices on the Channel. The device field Da of the address a0 in the CAL/SAM command
should be incremented after each transaction.
Figure 25-2 shows an example of a temperature calibration sequence to the RDRAM device. This sequence is
broadcast once every tTEMP interval to all the RDRAM devices on the Channel. The TCEN and TCAL are ROP
commands, and cause the slew rate of the output drivers to adjust for temperature drift. During the quiet interval
tTCQUIET the devices being calibrated can’t be read, but they can be written.
Figure 25-1 Current Control CAL/SAM Transaction Example
T0
T
T
T
T4
T
T
T
T8
T
T
T
11T12
T
T
T
15 T16
T
T
T
19 T20
T
T
T
23 T24
T
T
T
27T28
T
T
T
31 T32
T
T
T
35 T36
T
0
T
T
T
43T44T T T
45 46 47
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
29 30
33 34
37
41 42
CTM/CFM
Read data from the same
device from an earlier RD
command must be at this
packet position or earier.
Read data from the same
device from a later RD
command must be at this
packet position or later.
Read data from a different
device from an earlier RD
command can be anywhere
prior to the Q(a0) packet.
Read data from a different
device from a later RD
command can be anywhere
after to the Q(a0) packet.
ROW2
..ROW0
t
CCTRL
COL4
..COL0
CAL a0
CAL a0
CAL a0
CAL/SAM a0
CAL a2
t
t
CCSAMTOREAD
CAC
Q (a0)
Q (a1)
DQA8..0
DQB8..0
Q (a1)
t
DQA5 of the first calibrate packet has the inverted TSQ bit of INIT
control register; i.e. logic 0 or high voltage means hot temperature.
When used for monitoring, it should be enabled with the DQA3
bit (current control one value) in case there is no RDRAM present:
READTOCC
a0 = {Da, Bx}
a1 = {Da, Bx}
a2 = {Da, Bx}
Transaction a0: CAL/SAM
Transaction a1: RD
Transaction a2: CAL/SAM
HotTemp = /DQA5•DQA3
Note that DQB3 could be used instead of DQA3.
Figure 25-2 Temperature Calibration (TCEN-TCAL) Transactions to RDRAM
T
T
T
T
T
T
T
T
T
T
T
T
11T
T
T
T
15 T
T
T
T
19 T
T
T
T
23 T
T
T
T
27T
T
T
T
T
35 T
T
T
T
T
43T
T T T
45 46 47
44
1
2
3
5
6
7
9
10
13 14
17 18
21 22
25 26
2
33 34
37 38
42
0
4
8
12
16
20
24
28
32
36
CTM/CFM
t
TEMP
ROW2
..ROW0
TCEN
TCAL
TCEN
t
TCAL
t
TCEN
t
TCQUIET
COL4
..COL0
Any ROW packet may be
placed in the gap between the
ROW packets with the
C
TCEN and TCAL commands.
No read data from devices
being calibrated
DQA8..0
DQB8..0
54
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
26. Electrical Conditions
Electrical Conditions
Symbol
Tj
Parameter and Conditions
MIN.
—
MAX.
100
Unit
°C
V
Junction temperature under bias
Supply voltage
VDD, VDDa
VDD,N,VDDa,N
2.50 – 0.13
—
2.50 + 0.13
2.0
Supply voltage droop (DC) during NAP interval
(tNLIMT)
%
VDD,N,VDDa,N
VCMOS Note1
Supply voltage ripple (AC) during NAP interval
(tNLIMT)
–2.0
+2.0
%
Supply voltage for CMOS pins (2.5V controllers)
2.50 – 0.13
1.80 – 0.1
1.80 – 0.1
1.40 – 0.2
VREF – 0.5
VREF – 0.5
VREF + 0.2
VREF + 0.15
0.67
2.50 + 0.25
1.80 + 0.2
1.80 + 0.1
1.40 + 0.2
VREF – 0.2
VREF – 0.15
VREF + 0.5
VREF + 0.5
1.00
V
V
V
V
V
V
V
V
V
Supply voltage for CMOS pins (1.8V controllers)
Termination voltage
VTERM
VREF
VDIL
Reference voltage
RSL data input - low voltage
tCYCLE=2.50ns
tCYCLE=1.875ns
tCYCLE=2.50ns
tCYCLE=1.875ns
VDIH
RSL data input - high voltageNote2
RDA
RSL input data asymmetry:
RDA = (VDIH – VREF) / (VREF – VDIL)
RSL clock input - common mode
VCM = (VCIH + VCIL ) / 2
VCM
1.3
0.35
0.225
1.8
V
V
V
VCIS, CTM
VCIS, CFM
RSL clock input swing :
1.00
1.00
VCIS = VCIH – VCIL (CTM, CTMN pins).
RSL clock input swing :
VCIS = VCIH – VCIL (CFM, CFMN pins).
CMOS input low voltage
VIL, CMOS
VIH, CMOS
– 0.3Note3
+ (VCMOS / 2– 0.25)
VCMOS + 0.3Note4
V
V
CMOS input high voltage
VCMOS / 2+0.25
Notes 1. VCMOS must remain on as long as VDD is applied and cannot be turned off.
2. VDIH is typically equal to VTERM (1.8V ± 0.1V) under DC conditions in a system.
3. Voltage undershoot is limited to −0.7V for a duration of less than 5ns.
4. Voltage overshoot is limited to VCMOS + 0.7V for a duration of less than 5ns.
55
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
27. Timing Conditions
Timing Conditions
Symbol
tCYCLE
Parameter
MIN.
2.50
1.875
0.2
MAX.
3.33
2.5
0.5
60%
1.0
1.0
+0.1
+0.1
0.65
0.45
—
Unit
ns
Figures
CTM and CFM cycle times
PC800
Figure 30-1
PC1066
tCR, tCF
tCH, tCL
tTR
CTM and CFM input rise and fall times
CTM and CFM high and low times
CTM-CFM differential
ns
Figure 30-1
Figure 30-1
Figure 22-1
Figure 30-1
Figure 30-1
Figure 35-1
Figure 31-1
40%
0.0
tCYCLE
(MSE/MS=0/0)
(MSE/MS=1/1)
(MSE/MS=1/0)
0.9
tCYCLE
–0.1
–0.1
0.2
tDCW
Domain crossing window
DQA/DQB/ROW/COL input rise/fall
times
tCYCLE
ns
tDR, tDF
tCYCLE=2.50ns
tCYCLE=1.875ns
tCYCLE=2.50ns
tCYCLE=1.875ns
0.2
ns
tS, tH
DQA/DQB/ROW/COL-to-CFM
setup/hold time
0.200 Note1,2
0.160 Note2
—
ns
Figure 31-1
—
ns
tDR1, tDF1
tDR2, tDF2
tCYCLE1
SIO0, SIO1 input rise and fall times
CMD,SCK input rise and fall times
5.0
2.0
—
ns
Figure 33-1
Figure 33-1
Figure 33-1
Figure 33-1
—
ns
SCK cycle time - Serial control register transactions
1,000
10
ns
SCK cycle time - Power transitions
tCYCLE=2.50ns
tCYCLE=1.875ns
tCYCLE=2.50ns
tCYCLE=1.875ns
—
ns
7.5
—
ns
tCH1, tCL1
SCK high and low times
4.25
3.5
—
ns
Figure 33-1
Figure 33-1
Figure 33-1
—
ns
tS1
CMD setup time to SCK rising or falling tCYCLE=2.50ns
edge Note3
tCYCLE=1.875ns
CMD hold time to SCK rising or falling tCYCLE=2.50ns
1.25
1.0
—
ns
—
ns
tH1
1.0
—
ns
edge Note3
tCYCLE=1.875ns
1.0
—
ns
tS2
SIO0 setup time to SCK falling edge
SIO0 hold time to SCK falling edge
40
—
ns
Figure 33-1
Figure 33-1
tH2
40
—
ns
tS3
PDEV setup time on DQA5..0 to SCK rising edge
PDEV hold time on DQA5..0 to SCK rising edge
ROW2..0, COL4..0 setup time for quiet window
ROW2..0, COL4..0 hold time for quiet windowNote4
Quiet on ROW / COL bits during NAP / PDN entry
Offset between read data and CC packets (same device)
0
—
ns
Figure 23-4, 33-2
Figure 23-4, 33-2
Figure 23-4
tH3
5.5
—
ns
tS4
–1
—
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tH4
5
—
Figure 23-4
tNPQ
tREADTOCC
4
—
Figure 23-3
12
—
Figure 25-1
tCCSAMTOREAD Offset between CC packet and read data (same device)
8
—
Figure 25-1
tCE
CTM/CFM stable before NAP/PDN exit
CTM/CFM stable after NAP/PDN entry
ROW packet to COL packet ATTN framing delay
Maximum time in NAP mode
2
—
Figure 23-4
tCD
100
7
—
Figure 23-3
tFRM
—
Figure 23-2
tNLIMIT
tREF
—
—
10
32
µs
ms
Figure 23-1
Figure 24-1
Figure 25-1
Figure 25-2
Figure 25-2
Figure 25-2
Figure 25-2
Figure 22-1
Figure 24-2
Refresh interval
tCCTRL
tTEMP
tTCEN
Current control interval
34 tCYCLE
—
100 ms
100
—
—
Temperature control interval
ms
TCE command to TCAL command
TCAL command to quiet window
Quiet window (no read data)
150
2
tCYCLE
tCYCLE
tCYCLE
µs
tTCAL
2
tTCQUIET
tPAUSE
tBURST
140
—
—
RDRAM delay (no RSL operations allowed)
200
200
Interval after PDN or NAP (with self-refresh) exit in which
all banks of the RDRAM must be refreshed at least once.
—
µs
56
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Notes 1. This parameter also applies to a PC1066 part when operated with tCYCLE = 2.50ns.
2. tS,MIN and tH,MIN for other tCYCLE values can be interpolated between or extrapolated from the timings at the 2
specified tCYCLE values.
3. With VIL,CMOS = 0.5 VCMOS − 0.4 V and VIH,CMOS = 0.5 VCMOS + 0.4 V
4. Effective hold becomes tH4’=tH4 + [PDNXA • 64 • tSCYCLE + tPDNXB,MAX ] − [PDNX • 256 • tSCYCLE ]
if [PDNX • 256 • tSCYCLE ] < [PDNXA • 64 • tSCYCLE + tPDNXB,MAX ]. See Figure 23-4.
57
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
28. Electrical Characteristics
Electrical Characteristics
Symbol
ΘJC
Parameter and Conditions
MIN.
—
MAX.
Unit
°C/Watt
µA
Junction-to-Case thermal resistance
VREF current @ VREF,MAX
0.5
+10
+10
90
IREF
–10
IOH
RSL output high current @ (0≤VOUT ≤VDD)
RSL IOL current @ VOL=0.9 V, VDD,MIN, Tj,MAX Note1
–10
µA
IALL
tCYCLE=2.50ns
tCYCLE=1.875ns
30.0
32.0
—
mA
mA
mA
Ω
90
∆IOL
RSL IOL current resolution step
Dynamic output impedance
2.0
rOUT
150
—
IOL, NOM
RSL IOL current @ VOL=1.0 VNote2, 3
tCYCLE=2.50ns
tCYCLE=1.875ns
26.6
27.1
–10.0
—
30.6
30.1
+10.0
0.3
mA
mA
µA
II,CMOS
CMOS input leakage current @ (0 ≤ VI,CMOS ≤ VCMOS)
CMOS output low voltage @ IOL,CMOS = 1.0 mA
CMOS output high voltage @ IOH,CMOS = – 0.25 mA
VOL,CMOS
VOH,CMOS
V
VCMOS – 0.3
—
V
Note 1. This measurement is made in manual current control mode with all output device legs sinking current.
2. This measurement is made in automatic current control mode after at least 64 current control calibration
operations to a device and after CCA and CCB are initialized to a value of 64. This value applies to all DQA
and DQB pins.
3. This measurement is made in automatic current control mode with the ASYMA and ASYMB register fields
set to 0.
29. Timing Characteristics
Timing Characteristics
Symbol
tQ
Parameter
MIN.
MAX.
Unit
ns
Figure(s)
CTM-to-DQA/DQB output time
tCYCLE = 2.50 ns
tCYCLE = 1.875 ns
tCYCLE = 2.50 ns
tCYCLE = 1.875 ns
–0.260Note1,2 +0.260Note1,2
–0.195Note2 +0.195Note2
Figure 32-1
tQR, tQF
DQA/DQB output rise and fall times
0.2
0.2
—
2
0.45
0.32
10
—
ns
Figure 32-1
tQ1
SCK-to-SIO0delay@CLOAD,MAX = 20 pF (SD read packet)
SCK(pos)-to-SIO0 delay @ CLOAD,MAX = 20pF (SD read data hold)
SIOOUT rise/fall @ CLOAD,MAX = 20 pF
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ CLOAD,MAX = 20 pF
NAP exit delay - phase A
ns
ns
Figure 34-1
Figure 34-1
Figure 34-1
Figure 34-1
Figure 23-4
Figure 23-4
Figure 23-4
Figure 23-4
Figure 23-2
Figure 23-2
Figure 23-3
Figure 23-3
tHR
tQR1, tQF1
tPROP1
tNAPXA
tNAPXB
tPDNXA
tPDNXB
tAS
—
—
—
—
—
—
—
—
—
—
12
20
50
40
4
ns
ns
ns
NAP exit delay - phase B
ns
PDN exit delay - phase A
µs
PDN exit delay - phase B
9,000
1
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
ATTN-to-STBY power state delay
tSA
STBY-to-ATTN power state delay
0
tASN
ATTN/STBY-to-NAP power state delay
ATTN/STBY-to-PDN power state delay
8
tASP
8
Notes 1. This parameter also applies to a PC1066 part when operated with tCYCLE =2.50 ns.
2. tQ,MIN and tQ,MAX for other tCYCLE values can be interpolated between or extrapolated from the timings at the
2 specified tCYCLE values.
58
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
30. RSL Clocking
Figure 30-1 is a timing diagram which shows the detailed requirements for the RSL clock signals on the Channel.
The CTM and CTMN are differential clock inputs used for transmitting information on the DQA and DQB, outputs.
Most timing is measured relative to the points where they cross. The tCYCLE parameter is measured from the falling
CTM edge to the falling CTM edge. The tCL and tCH parameters are measured from falling to rising and rising to falling
edges of CTM. The tCR and tCF rise-and fall-time parameters are measured at the 20 % and 80 % points.
The CFM and CFMN are differential clock outputs used for receiving information on the DQA, DQB, ROW and COL
outputs. Most timing is measured relative to the points where they cross. The tCYCLE parameter is measured from the
falling CFM edge to the falling CFM edge. The tCL and tCH parameters are measured from falling to rising and rising to
falling edges of CFM. The tCR and tCF rise- and fall-time parameters are measured at the 20 % and 80 % points. The
tTR parameters specifies the phase difference that may be tolerated with respect to the CTM and CFM differential
clock inputs (the CTM pair is always earlier).
Figure 30-1 RSL Timing - Clock Signals
t
CYCLE
t
t
CL
CH
t
CR
t
CR
CTM
V
CIH
80%
50%
20%
V
CM
V
CIL
t
CTMN
CFM
CF
t
CF
t
TR
t
t
CR
CR
V
CIH
80%
50%
20%
V
CM
V
CIL
CFMN
t
CF
t
CF
t
t
CL
CH
t
CYCLE
59
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
31. RSL - Receive Timing
Figure 31-1 is a timing diagram which shows the detailed requirements for the RSL input signals on the Channel.
The DQA, DQB, ROW, and COL signals are inputs which receive information transmitted by a Direct RAC on the
Channel. Each signal is sampled twice per tCYCLE interval. The set/hold window of the sample points is tS/tH. The
sample points are centered at the 0 % and 50 % points of a cycle, measured relative to the crossing points of the
falling CFM clock edge. The set and hold parameters are measured at the VREF voltage point of the input transition.
The tDR and tDF rise- and fall-time parameters are measured at the 20 % and 80 % points of the input transition.
Figure 31-1 RSL Timing - Data Signals for Receive
CFM
V
CIH
80%
50%
20%
VCM
V
CIL
CFMN
0.5•t
CYCLE
DQA
DQB
ROW
COL
t
t
t
H
t
t
S
S
H
DR
V
DIH
80%
odd
even
V
REF
20%
V
DIL
t
DF
60
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
32. RSL - Transmit Timing
Figure 32-1 is a timing diagram which shows the detailed requirements for the RSL output signals on the Channel.
The DQA and DQB signals are outputs to transmit information that is received by a Direct RAC on the Channel.
Each signal is driven twice per tCYCLE interval. The beginning and end of the even transmit window is at the 75 %
point of the previous cycle and at the 25 % point of the current cycle. The beginning and end of the odd transmit
window is at the 25 % point and at the 75 % point of the current cycle. These transmit points are measured relative to
the crossing points of the falling CTM clock edge. The size of the actual transmit window is less than the ideal
tCYCLE/2, as indicated by the non-zero valued of tQ,MIN and tQ,MAX. The tQ parameters are measured at the 50 % voltage
point of the output transition.
The tQR and tQF rise- and fall-time parameters are measured at the 20 % and 80 % points of the output transition.
Figure 32-1 RSL Timing - Data Signals for Transmit
CTM
V
CIH
80%
50%
20%
VCM
V
CIL
CTMN
0.75•t
t
0.75•t
CYCLE
CYCLE
0.25•t
t
CYCLE
DQA
DQB
t
t
Q,MIN
t
Q,MAX
QR
Q,MAX
Q,MIN
V
QH
80%
odd
even
50%
20%
V
QL
t
QF
61
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
33. CMOS - Receive Timing
Figure 33-1 is a timing diagram which shows the detailed requirements for the CMOS input signals.
The CMD and SIO0 signals are inputs which receive information transmitted by a controller (or by another RDRAM
DEVICE’Ss SIO1 output). SCK is the CMOS clock signal driven by the controller. All signals are high true.
The cycle time, high phase time, and low phase time of the SCK clock are tCYCLE1, tCH1 and tCL1, all measured at the
50 % level. The rise and fall times of SCK, CMD, and SIO0 are tDR1 and tDF1, measured at the 20 % and 80 % levels.
The CMD signal is sampled twice per tCYCLE1 interval, on the rising edge (odd data) and the falling edge (even data).
The set/hold window of the sample points is tS1/tH1. The SCK and CMD timing points are measured at the 50 % level.
The SIO0 signal is sampled once per tCYCLE1 interval on the falling edge. The set/hold window of the sample points
is tS2/tH2. The SCK and SIO0 timing points are measured at the 50 % level.
Figure 33-1 CMOS Timing - Data Signals for Receive
t
DR2
V
IH,CMOS
SCK
80%
50%
20%
t
CYCLE1
V
IL,CMOS
t
t
t
CL1
CH1
DF2
t
t
t
H1
t
t
H1
DR2
S1
S1
V
IH,CMOS
CMD
80%
50%
20%
odd
even
V
IL,CMOS
t
DF2
t
t
H2
t
S2
DR1
V
IH,CMOS
SIO0
80%
50%
20%
V
IL,CMOS
t
DF1
62
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
The SCK clock is also used for sampling data on RSL input in one situation. Figure23-4 shows the PDN and NAP
exit sequences. If the PSX field of the INIT register is one (Figure 22-1 control registers (1/7) “INIT Register”), then
the PDN and NAP exit sequences are broadcast; i.e. all RDRAM devices that are in PDN or NAP will perform the exit
sequence. If the PSX field of the INIT register is zero, then the PDN and NAP exit sequences are directed; i.e. only
one RDRAM that is in PDN or NAP will perform the exit sequence.
The address of that RDRAM is specified on the DQA[5:0] bus in the set hold window tS3/tH3 around the rising edge of
SCK. This is shown Figure 33-2. The SCK timing point is measured at the 50 % level, and the DQA [5:0] bus signals
are measured at the VREF level.
Figure 33-2 CMOS Timing - Device Address for NAP or PDN Exit
V
IH,CMOS
SCK
80%
50%
20%
V
IL,CMOS
t
t
S3
H3
V
DIH
DQA[5:0]
80%
PDEV
V
REF
20%
V
DIL
63
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
34. CMOS - Transmit Timing
Figure 34-1 is a timing diagram which shows the detailed requirements for the CMOS output signals. The SIO0
signal is driven once per tCYCLE1 interval on the falling edge. The clock-to-output window is tQ1,MIN /tQ1,MAX. The SCK
and SIO0 timing points are measured at the 50 % level. The rise and fall times of SIO0 are tQR1 and tQF1, measured at
the 20 % and 80 % levels.
Figure34-1 also shows the combinational path connecting SIO0 to SIO1 and the path connecting SIO1 to SIO0
(read data only). The tPROP1 parameter specified this propagation delay. The rise and fall times of SIO0 and SIO1
input must be tDR1 and tDF1, measured at the 20 % and 80 % levels. The rise and fall times of SIO0 and SIO1 outputs
are tQR1 and tQF1, measured at the 20 % and 80 % levels.
Figure 34-1 CMOS Timing - Data Signals for Transmit
V
IH,CMOS
SCK
80%
50%
20%
V
IL,CMOS
t
t
Q1,MAX
HR,MIN
t
QR1
V
OH,CMOS
SIO0
80%
50%
20%
V
OL,CMOS
t
QF1
t
DR1
V
IH,CMOS
SIO0
or
SIO1
80%
50%
20%
V
IL,CMOS
t
t
t
QR1
t
DF1
PROP1,MAX
PROP1,MIN
V
OH,CMOS
SIO0
or
80%
SIO1
50%
20%
V
OL,CMOS
t
QF1
64
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
35. RSL - Domain Crossing Window
When read data is returned by the RDRAM device, information must cross from the receive clock domain (CFM) to
the transmit clock domain (CTM). The tTR parameter permits the CFM to CTM phase to vary though an entire cycle ;
i.e. there is no restriction on the alignment of these two clocks. A second parameter tDCW is needed in order to
describe how the delay between a RD command packet and read data packet varies as a function of the tTR value.
Figure 35-1 shows this timing for five distinct values of tTR. Case A (tTR=0) is what has been used throughout this
document. The delay between the RD command and read data is tCAC. As tTR varies from zero to tCYCLE (cases A
through E), the command to data delay is (tCAC-tTR). When the tTR value is in the range 0 to tDCW,MAX, the command to
data delay can also be (tCAC-tTR-tCYCLE). This is shown as cases A’ and B’ (the gray packets). Similarly, when the tTR
value is in the range (tCYCLE+tDCW,MIN) to tCYCLE, the command to data delay can also be (tCAC-tTR+tCYCLE). This is shown
as cases D’ and E’ (the gray packets). The RDRAM device will work reliably with either the white or gray packet
timing. The delay value is selected at initialization, and remains fixed thereafter.
Figure 35-1 RSL Timing - Crossing Read Domains
CFM
COL
•••
•••
t
CYCLE
RDa1
CTM
t
t
-t
CAC TR
t
TR
Case A tTR=0
Case A' tTR=0
Q(a1)
DQA/B
DQA/B
-t -t
CAC TR CYCLE
Q(a1)
•••
CTM
t
TR
t
t
-t
CAC TR
Case B
t
=t
TR DCW,MAX
Q(a1)
DQA/B
DQA/B
-t -t
CAC TR CYCLE
Case B' t =t
DCW,MAX
TR
Q(a1)
•••
•••
CTM
t
t
-t
CAC TR
Case C
Case D
t
=0.5•t
TR
CYCLE
DQA/B
t
Q(a1)
TR
CTM
-t
t
CAC TR
TR
DQA/B
t
=t
+ t
+ t
Q(a1)
DCW,MIN
DCW,MIN
TR
CYCLE
CYCLE
Case D'
=t
tCAC-tTR+tCYCLE
DQA/B
t
TR
Q(a1)
•••
CTM
t
TR
t
t
-t
CAC TR
DQA/B
DQA/B
Case E
t
=t
TR
CYCLE
CYCLE
Q(a1)
-t +t
CAC TR CYCLE
Case E' t =t
TR
Q(a1)
65
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
36. Timing Parameters
Timing Parameters Summary
Para- Description
meter
MIN.
PC1066
MAX. Units Figures
PC800
-AEP
(-32P)
28
-AE
(-32)
28
-AD
(-35)
32
-8C
(-40)
28
Row Cycle time of RDRAM banks - the interval between
ROWA packets with ACT commands to the same bank.
—
tCYCLE Figure13-1
Figure14-1
tRC
RAS-asserted time of RDRAM bank - the interval between
ROWA packet with ACT command and next ROWR packet with
PRERNote 1 command to the same bank.
20
8
20
8
22
10
8
20
8
tCYCLE Figure13-1
Figure14-1
Note 2
tRAS
64µs
Row Precharge time of RDRAM banks - the interval between
ROWR packet with PRERNote 1 command and next ROWA packet
with ACT command to the same bank.
—
—
—
—
tCYCLE Figure13-1
Figure14-1
tRP
Precharge-to-precharge time of RDRAM device - the interval
between successive ROWR packets with PRERNote 1
commands to any banks of the same device.
8
8
8
tCYCLE Figure10-3
tPP
RAS-to-RAS time of RDRAM device - the interval between
successive ROWA packets with ACT commands to any
banks of the same device.
8
8
8
8
tCYCLE Figure12-1
tRR
RAS-to-CAS Delay - the interval from ROWA packet with
ACT command to COLC packet with RD or WR command.
Note - the RAS-to-CAS delay seen by the RDRAM core (tRCD-
C) is equal to tRCD-C = 1 + tRCD because of differences in the row
and column paths through the RDRAM interface.
9
9
9
7
tCYCLE Figure13-1
Figure14-1
tRCD
CAS Access delay - the interval from RD command to Q read
data. The equation for tCAC is given in the TPARM register in
Figure 22-1(5/7).
8
9
9
8
12
tCYCLE Figure4-1
tCYCLE Figure4-1
tCAC
CAS Write Delay - interval from WR command to D write
data.
6
4
6
4
6
4
6
4
6
tCWD
tCC
tPACKET
CAS-to-CAS time of RDRAM bank - the interval between
successive COLC commands.
—
tCYCLE Figure13-1
Figure14-1
Length of ROWA, ROWR, COLC, COLM or COLX packet.
4
8
4
8
4
8
4
8
4
tCYCLE Figure2-1
tCYCLE Figure15-1
Interval from COLC packet with WR command to COLC
packet which causes retire, and to COLM packet with
bytemask.
—
tRTR
The interval (offset) from COLC packet with RDA command,
or from COLC packet with retire command (after WRA
automatic precharge), or from COLC packet with PREC
command, or from COLX packet with PREX command to the
equivalent ROWR packet with PRER. The equation for tOFFP
is given in the TPARM register in Figure 22-1(5/7).
4
4
4
4
4
tCYCLE Figure14-2
tOFFP
Interval from last COLC packet with RD command to ROWR
packet with PRER.
4
4
4
4
4
4
4
4
—
—
tCYCLE Figure13-1
tCYCLE Figure14-1
tRDP
tRTP
Interval from last COLC packet with automatic retire
command to ROWR packet with PRER.
Notes 1. Or equivalent PREC or PREX command. See Figure 12-2.
2. This is a constraint imposed by the core, and is therefore in units of ms rather than tCYCLE.
66
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
37. Absolute Maximum Ratings
Absolute Maximum Ratings
Symbol
Parameter
MIN.
–0.3
–0.5
–50
MAX.
Unit
V
VI,ABS
Voltage applied to any RSL or CMOS pin with respect to GND
Voltage on VDD and VDDa with respect to GND
Storage temperature
VDD +0.3
VDD +1.0
+100
VDD,ABS ,VDDa,ABS
TSTORE
V
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
38. IDD - Supply Current Profile
IDD - Supply Current Profile
RDRAM Power Stated Steady-State
@ tCYCLE
IDD value
IDD,PDN
Transaction RatesNote 1
MIN.
MAX.
6.0
Unit
mA
Device in PDN. self-refresh enabled and
INIT.LSR=0
2.50 ns/1.875 ns
IDD,NAP
Device in Nap.
2.50 ns/1.875 ns
2.50 ns
4.0
70
mA
mA
IDD,STBY
Device in STBY. This is the average for a
device in STBY with (1) no packets on the
channel, and (2) with packets sent to other
devices.
1.875 ns
2.50 ns
90
IDD,ATTN
Device in ATTN. This is the average for a
device in ATTN with (1) no packets on the
channel, and (2) with packets sent to other
devices.
mA
100
130
1.875 ns
IDD,ATTN-W
Device in ATTN. ACT command every 8•tCYCLE,
PRE command every 8•tCYCLE, WR command
every 4•tCYCLE and data is 1100..1100.
2.50 ns
1.875 ns
2.50 ns
530
680
520
660
mA
mA
IDD,ATTN-R
Device in ATTN. ACT command every 8•tCYCLE,
PRE command every 8•tCYCLE, RD command
every 4•tCYCLE and data is 1111..1111Note 2
.
1.875 ns
Notes 1. The CMOS interface consumes power in all power states.
2. This does not include the IOL sink current. The RDRAM device dissipates IOL•VOL in each output driver when
a logic one is driven.
67
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
39. Capacitance and Inductance
Figure 39-1 shows the equivalent load circuit of the RSL and CMOS pins. The circuit models the load that the
device presents to the Channel.
This circuit does not include pin coupling effects that are often present in the packaged device. Because coupling
effects make the effective single-pin inductance LI, and capacitance CI, a function of neighboring pins, these
parameters are intrinsically data-dependent. For purposes of specifying the device electrical loading on the Channel,
the effective LI and CI are defined as the worst-case values over all specified operating conditions.
LI is defined as the effective pin inductance based on the device pin assignment. Because the pad assignment
places each RSL signal adjacent to an AC ground (a GND or VDD pin), the effective inductance must be defined
based on this configuration. Therefore, LI assumes a loop with the RSL pin adjacent to an AC ground.
CI is defined as the effective pin capacitance based on the device pin assignment. It is the sum of the effective
package pin capacitance and the IO pad capacitance.
Figure 39-1 Equivalent Load Circuit for RSL Pins
Pad
L I
DQA,DQB,RQ Pin
C
I
RI
GND Pin
Pad
Pad
Pad
L I
CTM,CTMN,
CFM,CFMN Pin
C
I
RI
GND Pin
L I,CMOS
SCK,CMD Pin
C
I
GND Pin
L I,CMOS
SIO0,SIO1 Pin
C
I,CMOS,SIO
GND Pin
68
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
RSL Pin Parasitics
Symbol
LI
Parameter and Conditions - RSL pins
RSL effective input inductance
MIN.
–
MAX.
Unit
pF
1066 MHz
800 MHz
3.5
4.0
0.2
0.6
1.8
2.3
2.4
0.1
0.06
10
–
L12
Mutual inductance between any DQA or DQB RSL signals.
Mutual inductance between any ROW or COL RSL signals.
Difference in LI value between any RSL pins of a single device.
–
nH
nH
nH
pF
–
∆LI
–
RSL effective input capacitance Note
CI
1066 MHz
2.0
2.0
–
800 MHz
Mutual capacitance between any RSL signals.
C12
∆CI
RI
pF
pF
Ω
Difference in CI value between any RSL pins of a single device.
–
RSL effective input resistance
1066 MHz
800 MHz
4
4
15
Note This value is a combination of the device IO circuitry and package capacitances measured at VDD = 2.5 V and
f = 400 MHz with pin based at 1.4 V.
CMOS Pin Parasitics
Symbol
LI,CMOS
Parameter and Conditions - CMOS pins
CMOS effective input inductance
CMOS effective input capacitance (SCK,CMD) Note
CMOS effective input capacitance (SIO1,SIO0) Note
MIN.
–
MAX.
8.0
Unit
nH
pF
CI,CMOS
1.7
–
2.1
CI,CMOS,SIO
7.0
pF
Note This value is a combination of the device IO circuitry and package capacitances.
69
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
40. Interleaved Device Mode
Interleaved Device Mode permits a group of eight RDRAM devices on the Channel to collectively respond to
acommand. The purpose of this collective response is to limit the number of bits in each dualoct data packet which
are read from or written to a single RDRAM device device. This capability permits a memory controller to implement
hardware for fault detection and correction that can tolerate the complete internal failure of one RDRAM device on a
Channel.
The IDM bit of the INIT control register enables this fault tolerant operating mode. When it is set, the RDRAM device
will interpret the DR4..0 and DC4..0 fields of the ROW and COLC packets differently. Figure 40-1 shows the
differences using an example system with eight RDRAM devices.
The DEVID4..0 registers of these RDRAM devices are initial-ized to “00000” through “00111’. However, when the
IDM bit is set, only the upper two bits (DEVID4..3) will be compared to the DR4..3 and DC4..3 fields. This means that
ROW and COLC packets will be executed by groups of eight RDRAM devices, with a Channel containing from one to
four of these groups. The low-order DR2..0 bits are not used when IDM is set, and the low-order DC2..0 bits have a
modified function described below.
With IDM set, a directed ACT or PRE command in a ROW packet causes eight RDRAM devices to perform the
indicated operation. Likewise, when a RD or WR command is specified in a COLC command, the selected group of
eight RDRAM devices responds. When using IDM, devices must be added to the Channel in groups of eight. An
application will typically make the IDM bit setting the same for all RDRAM devices on a Channel.
The mechanism for indicating a broadcast ROW packet (DR4F and DR4T are both set to one) is not affected by the
setting of the IDM bit; i.e. IDM mode does not change the broadcast ROW packet mechanism.
Likewise, the COLX fields (DX4..0, XOP4..0, and BX5..0) are not changed by IDM mode - all COLX packets are
directed to a single device.
When the IDM bit is set, COLM packets should not be used (the M bit should be set to zero, selecting only COLX
packets). This is because the mapping of bytes to RDRAM device storage cells is changed by IDM mode.
Returning to Figure 40-1, the remaining fields of the ROW and COLC packets are interpreted in the same way
regardless of the setting of the IDM bit – IDM mode does not affect these fields. Specifically, the BR5..0 and BC5..0
fields of the ROW and COLC packets are used to select one of the banks just as when IDM is not set. The R8..0 field
of the ROW packet selects a row of the selected (BR5..0) bank to load into the bank’s sense amp. And the C6..0 field
selects one dualoct of the selected (BC5..0) bank’s sense amp.
The IDM bit affects what is done with this selected dualoct. When IDM is not set, the dualoct is driven onto the
Channel by the single selected RDRAM device. When IDM is set, each RDRAM device of the eight device group
selected by DC4..3 drives 16 or 24 bits (x18 device) of the 144-bit dualoct. The bits driven are a function of the
DEVID2..0 RDRAM register field, the DC2..0 COLC packet field, and the device width (x18). Figure 40-1 shows the
mapping that is appropriate for DC2..0=000.
Figure 40-2 and Figure 40-3 show the mapping for all eight values of DC2..0. There are eight mappings, which are
rotated among the eight devices using the following equation:
Pin = 7 - 4 • (DEVID2^DC2)
- 2 • (DEVID1^DC1) - 1 • (DEVID0^DC0) (Eq 1)
where “^” is the exclusive-or function. “Pin” is the pin number that is driven by the RDRAM device with the
DEVID2..0 value. For example, Pin=0 means the RDRAM drives DQA0 and DQB0, and so forth. The DQA8 pin is
always driven with DQA7, and DQB8 is always driven with DQB6 for x18 devices. For x16 devices, the DQA8 and
DQB8 pins are not used. For each of the eight mappings, the eight-RDRAM group supplies a complete dualoct. As
the application steps through eight values of DC2..0, all the bits of the eight underlying dualocts will be accessed.
Thus, an eight-RDRAM group appears to be a single RDRAM device with eight times the normal page size, with the
DC2..0 field providing the extra column addressing informa-tion (beyond what C6..0 provides).
70
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 40-1 ACT, PRE, RD, and WR Commands for Eight RDRAM System with IDM = 1
RDRAM 0
00000
RDRAM 1
00001
RDRAM 2
00010
RDRAM 3
00011
RDRAM 4
00100
RDRAM 5
00101
RDRAM 6
00110
RDRAM 7
00111
DEVID
4..0
compare to
DC4..3 DEVID4..3
DR4..3
access
device
bank array
•
BR5..0
BC5..0
•
•
access
bank
•
same as
device 0
same as
device 0
same as
device 0
same as
device 0
same as
device 0
same as
device 0
same as
device 0
one bank
•
•
R12..0
•
•
•
•
•
•
access
row
ACT
PRE
sense
amp.
C6..0
•
•
•
•
access
column
WR
RD
DC2..0
=000
form
dualoct
DQA7
DQB7
DQA8
DQA6
DQB6
DQB8
DQA5
DQB5
DQA4
DQB4
DQA3
DQB3
DQA2
DQB2
DQA1
DQB1
DQA0
DQB0
Channel
notation
DQA0
•
•
•
•
•
•
DQA8
DQB0
•
•
•
•
•
•
•
•
•
•
DQB8
device (2B banks)
bank (2R rows)
row (2C dualocts)
dualoct (144 bits)
one bit
CTM/CFM
71
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 40-2 Mapping from DEVID2..0 and DC2..0 Fields to DQ Packet with IDM = 1
DEVID2..0
011
000
001
010
100
101
110
111
DC2..0
000
Mapping for
previous figure
DQA7
DQB7
DQA8
DQA6
DQB6
DQB8
DQA5
DQB5
DQA4
DQB4
DQA3
DQB3
DQA2
DQB2
DQA1
DQB1
DQA0
DQB0
001
010
011
CTM/CFM
DQA0
DQA1
DQA2
DQA3
DQA4
DQA5
DQA6
DQA7
DQA8
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
DQA6
DQB6
DQB8
DQA7
DQB7
DQA8
DQA4
DQB4
DQA5
DQB5
DQA2
DQB2
DQA3
DQB3
DQA0
DQB0
DQA1
DQB1
DQA5
DQB5
DQA4
DQB4
DQA7
DQB7
DQA8
DQA6
DQB6
DQB8
DQA1
DQB1
DQA0
DQB0
DQA3
DQB3
DQA2
DQB2
DQA4
DQB4
DQA5
DQB5
DQA6
DQB6
DQB8
DQA7
DQB7
DQA8
DQA0
DQB0
DQA1
DQB1
DQA2
DQB2
DQA3
DQB3
72
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Figure 40-3 Mapping from DEVID2..0 and DC2..0 Fields to DQ Packet with IDM = 1 (continued)
DEVID2..0
011
000
001
010
100
101
110
111
DC2..0
100
DQA3
DQB3
DQA2
DQB2
DQA1
DQB1
DQA0
DQB0
DQA7
DQB7
DQA8
DQA6
DQB6
DQB8
DQA5
DQB5
DQA4
DQB4
101
110
111
CTM/CFM
DQA0
DQA1
DQA2
DQA3
DQA4
DQA5
DQA6
DQA7
DQA8
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
DQA2
DQB2
DQA3
DQB3
DQA0
DQB0
DQA1
DQB1
DQA6
DQB6
DQB8
DQA7
DQB7
DQA8
DQA4
DQB4
DQA5
DQB5
DQA1
DQB1
DQA0
DQB0
DQA3
DQB3
DQA2
DQB2
DQA5
DQB5
DQA4
DQB4
DQA7
DQB7
DQA8
DQA6
DQB6
DQB8
DQA0
DQB0
DQA1
DQB1
DQA2
DQB2
DQA3
DQB3
DQA4
DQB4
DQA5
DQB5
DQA6
DQB6
DQB8
DQA7
DQB7
DQA8
73
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
41. Glossary of Terms
ACT
Activate command from AV field.
D
Write data packet on DQ pins.
activate
activate
adjacent
To access a roe and place in sense amp.
To access a row and place in sense amp.
DBL
DC
CNFGB register field – doubled-bank.
Device address field in COLC packet.
An RDRAM on a Channel.
Two RDRAM banks which share sense amps
(also called doubled banks).
device
DEVID
Control register with device address that is
matched against DR, DC, and DX fields.
ASYM
ATTN
ATTNR
ATTNW
AV
CCA register field for RSL VOL / VOH.
Power state – ready for ROW / COL packets.
Power state – transmitting Q packets.
Power state – receiving D packets.
Opcode field in ROW packets.
DM
Device match for ROW packet decode.
RDRAM with shared sense amp.
DQA and DQB pins.
Doubled-bank
DQ
DQA
Pins for data byte A.
bank
A block of 2RBIT•2CBIT storage cells in the core
DQB
Pins for data byte B.
of the RDRAM.
DQS
NAPX register field – PDN/NAP exit.
BC
Bank address field in CLC packet.
DR,DR4T,DR4F Device address field and packet framing fields
in ROW and ROWE packets.
BBIT
CNFGA register field - # bank address bits.
broadcast
BR
An operation executed by all RDRAM devices. dualoct
16 bytes – the smallest addressable datum.
Device address field in COLX packet.
A collection of bits in a packet.
Bank address field in ROW packets.
DX
bubble
Idle cycle(s) on RDRAM pins needed because
of a resource constraint.
field
INIT
Control register with initialization fields.
BYT
CNFGB register field – 9 bits per byte.
Bank address field in COLX packet.
Column address field in COLC packet.
Calibrate (IOL) command in XOP field.
CNFGB register field - # column address bits.
Control register – current control A.
Control register – current control B.
Clock pins for receiving packets.
initialization
Configuring a Channel of RDRAM devices so
they are ready to respond to transactions.
BX
C
LSR
CNFGA register field – low-power self-refresh.
Mask opcode field (COLM/COLX packet).
Field in COLM packet for masking byte A.
Field in COLM packet for masking byte B.
Mask command in M field.
CAL
M
CBIT
MA
CCA
MB
CCB
MSK
CFM,CFMN
Channel
CLRR
CMD
MVER
NAP
Control register – manufacturer ID.
Power state – needs SCK/CMD wakeup.
Nap command in ROP field.
ROW / COL / DQ pins and external wires.
Clear reset command from SOP field.
CMOS pins for initialization / power control.
Control register with configuration fields.
Control register with configuration fields.
Pins for column-access control.
NAPR
NAPRC
NAPXA
NAPXB
NOCOP
NOROP
NOXOP
NSR
Conditional nap command in ROP field.
NAPX register field – NAP exit delay A.
NAPX register field – NAP exit delay B.
No-operation command in COP field.
No-operation command in ROP field.
No-operation command in XOP field.
INIT register field – NAP self-refresh.
A collection of bits carried on the Channel.
Power state – needs SCK/CMD wakeup.
Powerdown command in ROP field.
Control register – PDN exit delay A.
Control register – PDN exit delay B.
The fraction of non-idle cycles on a pin.
PREC, PRER, PREX precharge commands.
Precharge command in COP field.
CNFGA
CNFGB
COL
COLC
COLM
column
Column operation packet on COL pins.
Write mask packet on COL pins.
Rows in a bank or activated in sense amps
have 2CBTI dualocts column storage.
packet
PDN
Command
COLX
A decoded bit-combination from a field.
Extended operation packet on COL pins.
PDNR
PDNXA
PDNXB
pin efficiency
PRE
controller
A logic-device which drives the ROW / COL
/ DQ wires for a Channel of RDRAM devices.
COP
Column opcode field in COLC packet.
The banks and sense amps of an RDRAM.
Clock pins for transmitting packets.
core
CTM, CTMN
PREC
precharge
PRER
Current control Periodic operations to update the proper IOL
Value of RSL output drivers.
Prepares sense amp and bank for activate.
Precharge command in ROP field.
74
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
PREX
PSX
Precharge command in XOP field.
INIT register field – PDN/NAP exit.
INIT register field – PDN self-refresh.
CNFGB register field – protocol version.
Read data packet on DQ pins.
SETF
SETR
SINT
Set fast clock command from SOP field.
Set reset command from SOP field.
PSR
PVER
Q
Serial interval packet for control register
read/write transactions.
SIO0,SIO1
SOP
CMOS serial pins for control registers.
Serial opcode field in SRQ.
R
Row address field of ROWA packet.
CNFGB register field - #row address bits.
Read (/precharge) command in COP field.
Operation of accessing sense amp data.
RBIT
RD/RDA
read
SRD
Serial read opcode command from SOP.
INIT register field – Serial repeat bit.
SRP
SRQ
Serial request packet for control register
read/write transactions.
receive
Moving information from the Channel into the
RDRAM (a serial stream is demuxed).
STBY
Power state – ready for ROW packets.
Control register – stepping version.
Serial write opcode command from SOP.
TCLSCAS register field – tCAS core delay.
TCLSCAS register field – tCLS core delay.
Control register – tCAS and tCLS delay.
Control register – tCYCLE delay.
REFA
Refresh-activate command in ROP field.
Control register – next bank (self-refresh).
SVER
REFB
SWR
REFBIT
CNFGA register field – ignore bank bits (for
REFA and self-refresh).
TCAS
TCLS
REFP
REFR
refresh
retire
Refresh-precharge command in ROP field.
Control register – next row for REFA.
TCLSCAS
TCYCLE
TDAT
Periodic operations to restore storage cells.
Control register – tDAC delay.
The automatic operation that stores write
buffer into sense amp after WR command.
TEST77
TEST78
TRDLY
transaction
transmit
Control register – for test purposes.
Control register – for test purposes.
Control register – tRDLY delay.
RLX
RLXC, RLXR, RLXX relax commands.
Relax command in COP field.
RLXC
RLXR
RLXX
ROP
row
ROW, COL, DQ packets for memory access.
Relax command in ROP field.
Moving information from the RDRAM onto
the Channel (parallel word is muxed).
Relax command in XOP field.
Row-opcode field in ROWR packet.
2CBIT dualocts of cells (bank/sense amp).
Pins for row-access control
WR/WRA
write
Write (/precharge) command in COP field.
Operation of modifying sense amp data.
Extended opcode field in COLX packet.
ROW
ROW
ROWA
ROWR
RQ
XOP
ROWA or ROWR packets on ROW pins.
Activate packet on ROW pins.
Row operation packet on ROW pins.
Alternate name for ROW/COL pins.
Rambus Signal levels.
RSL
SAM
SA
Sample (IOL) command in XOP field.
Serial address packet for control register
transactions w/ SA address field.
SBC
SCK
SD
Serial broadcast field in SRQ.
CMOS clock pin.
Serial data packet for control register
transactions w/ SD data field.
SDEV
Serial device address in SRQ packet.
INIT register field – Serial device ID.
Refresh mode for PDN and NAP.
SDEVID
self-refresh
sense amp
Fast storage that holds copy of bank’s row.
75
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
42. Package Drawing
80-ball FBGA (µBGA)
EDR2518ABSE: Sn-Pb solder ball
EDR2518ABSE-E: Lead free solder ball (Sn-Ag-Cu)
Unit: mm
S
A
0.2
10.2 ± 0.1
S
B
0.2
INDEX MARK
17.16 ± 0.10
S
0.2
1.13 max.
S
S
0.35 ± 0.05
0.1
1.2
B
0.8
1.9
1.1
1.78
0.8
A
0.4
80-φ0.45 ± 0.05
M S A B
φ0.08
INDEX MARK
ECA-TS2-0089-01
76
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
43. Recommended Soldering Conditions
Please consult our sales office for soldering conditions of the EDR2518ABSE.
Type of Surface Mount Device
EDR2518ABSE: 80-ball FBGA (µBGA) < Sn-Pb >,
EDR2518ABSE-E: 80-ball FBGA (µBGA) < Lead free (Sn-Ag-Cu) >
77
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
NOTES FOR CMOS DEVICES
PRECAUTION AGAINST ESD FOR MOS DEVICES
1
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
78
Preliminary Data Sheet E0260E40 (Ver. 4.0)
EDR2518ABSE
Rambus, RDRAM and the Rambus logo are registered trademarks of Rambus Inc.
Direct Rambus, Direct RDRAM, RIMM, SO-RIMM and QRSL are trademarks of Rambus Inc.
µBGA is a registered trademark of Tessera, Inc.
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
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