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PTF10022 [ERICSSON]

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET;

PTF10022


元器件型号：	PTF10022
生产厂家：	ERICSSON
描述和应用：	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 局域网放大器 CD 晶体管
PDF文件：	总4页 (文件大小：146K)
下载文档：	下载PDF数据表文档文件
型号参数：PTF10022参数

PTF10027

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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0 ERICSSON

PTF10031

50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

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41 ERICSSON

PTF10036

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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24 ERICSSON

PTF10037

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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0 ERICSSON

PTF10041

TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR

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57 ETC

PTF10043

12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

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35 ERICSSON

PTF10045

30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor

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68 ERICSSON

PTF10048

30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

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29 ERICSSON

PTF10049

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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1 ERICSSON

PTF10052

35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

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30 ERICSSON

PTF10053

12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

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36 ERICSSON

PTF10065

30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

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17 ERICSSON

PTF10100

165 Watts, 860-900 MHz LDMOS Field Effect Transistor

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25 ERICSSON

PTF10107

5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

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47 ERICSSON

PTF10111

6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

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66 ERICSSON

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