PTF10120 [ERICSSON]

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor; 120瓦,1.8-2.0 GHz的GOLDMOS场效应晶体管
PTF10120
元器件型号: PTF10120
生产厂家: ERICSSON    ERICSSON
描述和应用:

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor
120瓦,1.8-2.0 GHz的GOLDMOS场效应晶体管

晶体 射频场效应晶体管 CD 局域网
PDF文件: 总6页 (文件大小:423K)
下载文档:  下载PDF数据表文档文件
型号参数:PTF10120参数

PTF10122

50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

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19 ERICSSON

PTF10125

135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

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20 ERICSSON

PTF10133

85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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29 ERICSSON

PTF10134

100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

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20 ERICSSON

PTF10135

5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

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45 ERICSSON

PTF10136

6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

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45 ERICSSON

PTF10136

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20244, 3 PIN

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0 INFINEON

PTF10137

12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

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46 ERICSSON

PTF10138

60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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39 ERICSSON

PTF10139

60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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38 ERICSSON

PTF10147

TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR

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53 ETC

PTF10149

70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor

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34 ERICSSON

PTF10149

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20252, 2 PIN

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0 INFINEON

PTF10153

60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

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18 ERICSSON

PTF10154

85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor

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17 ERICSSON