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元器件品牌
PTF10137
[ERICSSON]
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor; 12瓦， 1.0 GHz的GOLDMOS场效应晶体管
元器件型号：
PTF10137
生产厂家：
ERICSSON
描述和应用：
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
12瓦， 1.0 GHz的GOLDMOS场效应晶体管
晶体 晶体管 场效应晶体管
PDF文件：
总6页 (文件大小：178K)
下载文档：
下载PDF数据表文档文件
型号参数：PTF10137参数
查看货源
PTF10138
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
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156
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ERICSSON
PTF10139
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
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156
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ERICSSON
PTF10147
TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
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on line
156
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53
ETC
PTF10149
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
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156
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34
ERICSSON
PTF10149
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20252, 2 PIN
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on line
156
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0
INFINEON
PTF10153
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor
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156
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18
ERICSSON
PTF10154
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor
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on line
156
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17
ERICSSON
PTF10160
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
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: Undefined variable $rtag in
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on line
156
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47
ERICSSON
PTF10161
165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
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on line
156
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108
ERICSSON
PTF10162
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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22
ERICSSON
PTF10193
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
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on line
156
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28
ERICSSON
PTF10195
125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
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156
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29
ERICSSON
PTF102002
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20248, 2 PIN
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156
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0
INFINEON
PTF102002
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20267, 3 PIN
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156
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0
ERICSSON
PTF102003
TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-494A
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156
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32
ETC
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