PTF10193 [ERICSSON]

12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor; 12瓦, 860-960兆赫GOLDMOS⑩场效应晶体管
PTF10193
元器件型号: PTF10193
生产厂家: ERICSSON    ERICSSON
描述和应用:

12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
12瓦, 860-960兆赫GOLDMOS⑩场效应晶体管

晶体 射频场效应晶体管 CD 放大器
PDF文件: 总6页 (文件大小:334K)
下载文档:  下载PDF数据表文档文件
型号参数:PTF10193参数

PTF10195

125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

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29 ERICSSON

PTF102002

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20248, 2 PIN

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0 INFINEON

PTF102002

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20267, 3 PIN

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0 ERICSSON

PTF102003

TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-494A

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32 ETC

PTF102003

120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET

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31 PEAK

PTF102005

Transistor

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1 ERICSSON

PTF102015

TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391VAR

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34 ETC

PTF102022

RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

PTF102027

40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor

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41 ERICSSON

PTF102028

18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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23 ERICSSON

PTF-102-03-L-D

Board Connector, 4 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Terminal, Locking, Black Insulator, Socket, ROHS COMPLIANT

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0 SAMTEC

PTF-102-03-L-D

Board Connector, 4 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Terminal, Locking, Black Insulator, Socket, ROHS COMPLIANT

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0 SAMTEC

PTF102079

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20265, 2 PIN

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0 INFINEON

PTF102079

Transistor

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0 ERICSSON

PTF102093

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20260, 2 PIN

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0 INFINEON