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元器件品牌
PTF10193
[ERICSSON]
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor; 12瓦, 860-960兆赫GOLDMOS⑩场效应晶体管
元器件型号:
PTF10193
生产厂家:
ERICSSON
描述和应用:
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
12瓦, 860-960兆赫GOLDMOS⑩场效应晶体管
晶体 射频场效应晶体管 CD 放大器
PDF文件:
总6页 (文件大小:334K)
下载文档:
下载PDF数据表文档文件
型号参数:PTF10193参数
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PTF102003
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ETC
PTF102003
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
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PEAK
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Transistor
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ERICSSON
PTF102015
TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391VAR
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ETC
PTF102022
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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156
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PTF102027
40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor
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ERICSSON
PTF102028
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
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ERICSSON
PTF-102-03-L-D
Board Connector, 4 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Terminal, Locking, Black Insulator, Socket, ROHS COMPLIANT
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SAMTEC
PTF-102-03-L-D
Board Connector, 4 Contact(s), 2 Row(s), Female, Straight, 0.079 inch Pitch, Press Fit Terminal, Locking, Black Insulator, Socket, ROHS COMPLIANT
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156
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PTF102079
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20265, 2 PIN
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INFINEON
PTF102079
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ERICSSON
PTF102093
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20260, 2 PIN
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INFINEON
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