FM6BD4G2GXA-1.8BL [ESMT]

Memory Circuit, 64MX32, CMOS, PBGA162, BGA-162;


型号：	FM6BD4G2GXA-1.8BL
厂家：	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
描述：	Memory Circuit, 64MX32, CMOS, PBGA162, BGA-162
文件：	总1页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCP\4G+2G (NAND Flash + mobile DDR)

4G+2G (NAND Flash + mobile DDR)

TOP

Speed (NAND/Mobile SDRAM,

MobileDDR)

Part Number

Description

BGA Package

10.5x13 (mm) 137 ball

11.5x13 (mm) 162 ball

Sample MP

1.8V 4Gb NAND Flash (256Mbx16) + 1.8V 2Gb mobile DDR

SDRAM (64Mbx32)

FM67D4G2GA-5BH (2C)

FM6AD4G2GA-5BH (2C)

FM68D4G2GA-2.5BL

45ns/ 200MHz

NOW

1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb mobile DDR

SDRAM (64Mbx32)

45ns/ 200MHz

1.8V 4Gb NAND Flash (256Mbx16) + 1.8V 2Gb mobile DDRII

SDRAM (64Mbx32)

45ns/ 400MHz

1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb mobile DDRII

SDRAM (64Mbx32)

FM6BD4G2GA-1.8/2.5BL

45ns/ 533 or 400 MHz

45ns, 533/400 MHz

FM6BD4G2GXA-

1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb mobile DDRII

SDRAM (64Mbx32)

8x10.5 (mm) 162 ball; 11.5x13

(mm) 162 ball

1.8/2.5BL/BLC (2K)

FM6BD4G2GXA-1.8/2.5BLC 1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb mobile DDRII

(2C) SDRAM (64Mbx32)

FM68D4G2GXA-1.8/2.5BLC 1.8V 4Gb NAND Flash (256Mbx16) + 1.8V 2Gb mobile DDRII

(2C) SDRAM (64Mbx32)

FM6BD4G2GWA-1.8/2.5BLC 1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb mobile DDRII

8x10.5 (mm) 162 ball

162 Ball

(2S)

SDRAM (64Mbx32)

1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb mobile DDRII

SDRAM (64Mbx32)

FM6BD4G2GCA-1.8/2.5BLC

162 Ball

相关型号：

FM6K62010L

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WSMINI6-F1-B, SC-113DA, 6 PIN

PANASONIC