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M12L64164A-5TIG2Y [ESMT]

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54;

M12L64164A-5TIG2Y


元器件型号：	M12L64164A-5TIG2Y
生产厂家：	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
描述和应用：	Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 动态存储器光电二极管内存集成电路
PDF文件：	总45页 (文件大小：1257K)
下载文档：	下载PDF数据表文档文件
型号参数：M12L64164A-5TIG2Y参数

M12L64164A-6BG

1M x 16 Bit x 4 Banks Synchronous DRAM

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25 ESMT

M12L64164A-6BG

1M x 16 Bit x 4 Banks Synchronous DRAM

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18 ESMT

M12L64164A-6BG2C

Synchronous DRAM, 4MX16, CMOS, PBGA54, VBGA-54

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0 ESMT

M12L64164A-6BG2M

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54

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0 ESMT

M12L64164A-6BG2Y

1M x 16 Bit x 4 Banks

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9 ESMT

M12L64164A-6BIG

1M x 16 Bit x 4 Banks Synchronous DRAM

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12 ESMT

M12L64164A-6BIG2Y

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54

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1 ESMT

M12L64164A-6TA

1M x 16 Bit x 4 Banks Synchronous DRAM

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22 ESMT

M12L64164A-6TG

1M x 16 Bit x 4 Banks Synchronous DRAM

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13 ESMT

M12L64164A-6TG

1M x 16 Bit x 4 Banks Synchronous DRAM

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37 ESMT

M12L64164A-6TG

1M x 16 Bit x 4 Banks Synchronous DRAM

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19 ESMT

M12L64164A-6TG

1M x 16 Bit x 4 Banks Synchronous DRAM

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58 ETC

M12L64164A-6TG2C

暂无描述

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0 ESMT

M12L64164A-6TG2M

Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 ESMT

M12L64164A-6TG2Y

1M x 16 Bit x 4 Banks

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9 ESMT

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