M14D5121632A-2.5BG [ESMT]

8M x 16 Bit x 4 Banks DDR II SDRAM; 8M ×16位×4银行DDR II SDRAM
M14D5121632A-2.5BG
元器件型号: M14D5121632A-2.5BG
生产厂家: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
描述和应用:

8M x 16 Bit x 4 Banks DDR II SDRAM
8M ×16位×4银行DDR II SDRAM

动态存储器 双倍数据速率
PDF文件: 总59页 (文件大小:975K)
下载文档:  下载PDF数据表文档文件
型号参数:M14D5121632A-2.5BG参数

M14D5121632A-2.5BG2A

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84

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1 ESMT

M14D5121632A-2.5BIG2H

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84

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0 ESMT

M14D5121632A-2.5BIG2K

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84

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0 ESMT

M14D5121632A-3BG

8M x 16 Bit x 4 Banks DDR II SDRAM

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29 ESMT

M14D5121632A-3BIG

8M x 16 Bit x 4 Banks DDR II SDRAM

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45 ESMT

M14D5121632A-3BIG2H

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84

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0 ESMT

M14-SERIES

Interface IC

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26 ETC

M1500

Mercury TM1500 Digital Output Encoder Systems Factory Set Resolution to 0.50μm

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30 MICROESYS

M1500P

Mercury TM1500P PCB-Mount Digital Encoders Factory Set Resolution to 0.50μm

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38 MICROESYS

M1502NC200

Rectifier Diode, 1 Phase, 1 Element, 1502A, 2000V V(RRM), Silicon,

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0 IXYS

M1502NC220

Rectifier Diode, 1 Phase, 1 Element, 1502A, 2200V V(RRM), Silicon,

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0 IXYS

M1502NC240

Rectifier Diode, 1 Phase, 1 Element, 1502A, 2400V V(RRM), Silicon,

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0 IXYS

M1502NC250

Rectifier Diode, 1 Phase, 1 Element, 1502A, 2500V V(RRM), Silicon,

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2 IXYS

M1502ND200

Rectifier Diode, 1 Phase, 1 Element, 1502A, 2000V V(RRM), Silicon,

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0 IXYS

M1502ND220

Rectifier Diode, 1 Phase, 1 Element, 1502A, 2200V V(RRM), Silicon,

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0 IXYS