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元器件品牌
M53D128168A-7.5BAIG
[ESMT]
2M x 16 Bit x 4 Banks Mobile DDR SDRAM; 2M ×16位×4银行移动DDR SDRAM
元器件型号：
M53D128168A-7.5BAIG
生产厂家：
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
描述和应用：
2M x 16 Bit x 4 Banks Mobile DDR SDRAM
2M ×16位×4银行移动DDR SDRAM
存储 内存集成电路 动态存储器 双倍数据速率
PDF文件：
总46页 (文件大小：1076K)
下载文档：
下载PDF数据表文档文件
型号参数：M53D128168A-7.5BAIG参数
查看货源
M53D128168A-7.5BG
2M x 16 Bit x 4 Banks Mobile DDR SDRAM
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ESMT
M53D128168A-7.5BG2E
DDR DRAM, 8MX16, 6ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60
Warning
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0
ESMT
M53D128168A-7.5BIG2E
DDR DRAM, 8MX16, 6ns, CMOS, PBGA60, BGA-60
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1
ESMT
M53D128324A-7.5BG2E
DDR DRAM, 4MX32, 6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144
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0
ESMT
M53D256328A-5BG2F
DDR DRAM, 8MX32, 5ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144
Warning
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1
ESMT
M53D256328A-6BG2F
DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144
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8
ESMT
M53D256328A-7.5BG2F
DDR DRAM, 8MX32, 6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144
Warning
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0
ESMT
M53D5123216A-7.5BG
DDR DRAM, 16MX32, 6ns, CMOS, PBGA144, FBGA-144
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156
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3
ESMT
M53T
Double Balanced Mixer
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156
-
8
SPECTRUM
M53T28-19.680-2.0/-40+85
Oscillator
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2
MERCURY
M53T3-19.680-0.5/0+50
Oscillator
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5
MERCURY
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
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26
MA-COM
M-5400
Easy scrolling with PowerWheel
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156
-
0
CHERRY
M5400SL001
Wire And Cable,
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156
-
0
ALPHAWIRE
M5401
Mini size of Discrete semiconductor elements
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95
ETC
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