75NF75 [ESTEK]
HEXFET㈢ POWER MOSFET; HEXFET㈢功率MOSFET
| 型号： | 75NF75 |
| 厂家： | 
Estek Electronics Co. Ltd |
| 描述： | HEXFET㈢ POWER MOSFET |
| 文件： | 总2页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
75NF75
HEXFET® Power MOSFET
z
z
z
z
z
Dynamic dv/dt Rating
175°C Operating Temperature
Fast switching
VDSS = 75V
ID25 = 75A
Ease of Paralleling
Simple Drive Requirements
RDS(ON) = 13.0 mΩ
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
Max.
75 ①
Units
A
ID@TC=25°C Continuous Drain Current, VGS@10V
ID@TC=100°C Continuous Drain Current, VGS@10V
60
300
200
1.5
±20
23
IDM
Pulsed Drain Current ②
PD@TC=25°C Power Dissipation
Linear Derating Factor
W
W/°C
V
VGS
EAR
dv/dt
TJ
Gate-to-Source Voltage
Single Pulse Avalanche Energy ③
Peak Diode Recovery dv/dt ④
Operating Junction and
mJ
5.9
V/ns
–55 to +175
TSTG
Storage Temperature Range
°ْ C
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
300(1.6mm from case)
10 Ibf . in(1.1N . m)
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
0.65
—
Units
RθJC
RθCS
RθJA
Junction-to-case
°ْ C /W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
—
0.50
—
—
62
1
75NF75
HEXFET® Power MOSFET
Electrical Characteristics @TJ=25 ْ°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
75
Test Conditions
VGS=0V,ID=250uA
V(BR)DSS
△V(BR)DSS/
△TJ
Drain-to-Source Breakdown Voltage
—
—
V
Breakdown Voltage Temp. Coefficient — 0.074 — V/°C Reference to 25°C,ID=1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-resistance —
—
13.0
4.0
—
VGS=10V,ID=40A ⑤
VDS=VGS, ID=250μA
VDS=25V,ID=40A ⑤
VDS=75V,VGS=0V
VDS=60V,VGS=0V,TJ=150°C
VGS=20V
mΩ
V
Gate Threshold Voltage
2.0 —
Forward Transconductance
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
64
49
48
S
gfs
25
IDSS
Drain-to-Source Leakage current
μA
250
100
-100
160
29
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
IGSS
nA
VGS=-20V
Qg
ID=40A
VDS=60V
nC
nS
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain ("Miller") charge
Turn-on Delay Time
VGS=10V See Fig.6 and 13⑤
55
—
VDD=38V
ID=40A
Rise Time
—
RG=2.5Ωꢀ
VGS=10V See Figure 10⑤
Turn-Off Delay Time
Fall Time
—
td(off)
tf
—
Between lead,
6mm(0.25in.)
LD
LS
Internal Drain Inductance
Internal Source Inductance
—
—
4.5
7.5
—
—
nH from package
and center of
die contact
Ciss
Coss
Crss
Input Capacitance
—
—
—
3820 —
VGS=0V
VDS=25V
pF
Output Capacitance
610
130
—
—
f=1.0MHZ See Figure 5
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current .
(Body Diode)
Min.
Typ.
Max.
Units
A
Test Conditions
MOSFET symbol
showing the
IS
—
—
75
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
.
ISM
—
—
300
②
VSD Diode Forward Voltage
—
—
—
—
1.3
150
610
V
TJ=25°C,IS=40A,VGS=0V ⑤
trr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
100
410
nS TJ=25°C,IF=40A
di/dt=100A/μs ⑤
nC
Qrr
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
ton
Notes:
①
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)
③
Starting TJ = 25°C, L = 370mH, RG = 25Ω, IAS = 40A,
VGS=10V (See Figure 12)
ISD ≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS,TJ ≤ 175°C
④
⑤
②
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
相关型号：
©2020 ICPDF网 联系我们和版权申明