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NE7MAAH0-0-B [ETC]

N e u t r i k ® P a r t N u m b e r G u i d e;
NE7MAAH0-0-B
型号： NE7MAAH0-0-B
厂家： ETC    ETC
描述：

N e u t r i k ® P a r t N u m b e r G u i d e
文件： 总21页 (文件大小：801K)
中文：  中文翻译
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相关型号：

NE7MAH0-0-B

 N e u t r i k ® P a r t N u m b e r G u i d e

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ETC

NE800100

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800196

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800199

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800199

 RF SMALL SIGNAL, FET

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RENESAS

NE800200

 RF SMALL SIGNAL, FET

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RENESAS

NE800296

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800400

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800495-4

 RF SMALL SIGNAL, FET

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RENESAS

NE800495-4

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800495-5

 RF SMALL SIGNAL, FET

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RENESAS

NE800495-6

 RF SMALL SIGNAL, FET

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RENESAS

NE800495-6

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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-
CEL

NE800495-7

 RF SMALL SIGNAL, FET

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-
RENESAS

NE800495-7

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800495-8

 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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CEL

NE800898-4

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD

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ETC

NE800898-5

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD

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ETC

NE800898-5H

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD

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ETC

NE800898-6

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.8A I(DSS) | RFMOD

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ETC
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