概述
数据手册0809LD30P 概述
30 WATT, 28V, 1 GHz LDMOS FET 30瓦， 28V ， 1 GHz的LDMOS FET
0809LD30P 数据手册
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PDF下载R.0.2P.991602-BEHRE
0809LD30P
30 WATT, 28V, 1 GHz
LDMOS FET
P R E L I M I N A R Y I S S U E
GENERAL DESCRIPTION
CASE OUTLINE
55QU
Common Source
0809LD30P
The
is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
°
Device Dissipation @25 C (Pd)
110 W
θ
°
Thermal Resistance (
)
JC
1.5 C/W
Voltage and Current
Drain-Source (VDSS
)
65V
±
20V
Gate-Source (VGS)
Temperatures
°
-65 to +200 C
Storage Temperature
Operating Junction Temperature
°
+200 C
ELECTRICAL CHARACTERISTICS @ 25 C
°
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Vgs = 0V, Id = 2ma
Drain-Source Leakage Current Vds = 28V, Vgs= 0V
MIN TYP MAX UNITS
Drain-Source Breakdown
65
70
V
Β
Vdss
Idss
1
1
5
A
Igss
Gate-Source Leakage Current
Vgs = 20V, Vds = 0V
A
Vgs(th)
Vds(on)
gFS
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Input Capacitance
Vds = 10V, Id = 10ma
Vgs = 10V, Id = 2A
2
4
V
1.0
1.4
60
2.5
32
V
S
pF
pF
pF
Vds = 10V, Id = 3A
Vds = 28V, Vgs = 0V, F = 1 MHz
Ciss
Crss
Coss
Reverse Transfer Capacitance Vds = 28V, Vgs = 0V, F = 1 MHz
Output Capacitance Vds = 28V, Vgs = 0V, F = 1 MHz
FUNCTIONAL CHARACTERISTICS @ 25 C
°
GPS
Common Source Power Gain
Vds = 28V, Idq = 0.15A,
F = 900MHz, Pout = 30W
Vds = 28V, Idq = 0.15A,
F = 900MHz, Pout = 30W
Vds = 28V, Idq = 0.3A,
Pout =30WPEP, F1 = 900 MHz,
F2 = 900.1 MHz
14
50
dB
%
Drain Efficiency
ηd
IMD3
Intermodulation Distortion,
3rd Order
-30
dBc
Load Mismatch
Vds = 28V, Idq = 0.15A,
F = 900MHz, Pout = 30W
10:1
Ψ
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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