13PD75-TO(GCA) [ETC]

Optoelectronic ; 光电\n


型号：	13PD75-TO(GCA)
厂家：	ETC
描述：	Optoelectronic 光电\n 光电
文件：	总1页 (文件大小：74K)
中文：	中文翻译
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High Speed InGaAs Pin Photodiode

13PD75-TO (GCA)

The planar 13PD75-TO series of InGaAs photodiodes is intended for high speed, low noise,

and high linearity applications. The diameter of the photosensitive region is sufficiently small to

enable very low dark current and low capacitance operation while offering efficient coupling to

multi-mode fibers. Devices are hermetically sealed in standard TO-46 headers with either ultra

flat or lensed window caps. High reliability is achieved through planar, dielectric-passivated

design, and 100% purge burn-in ( 200^oC, 15 hours, V_r= 20V ). Chips can also be attached

and wire bonded to customer-supplied or other specified packages.

Features

Planar Structure

Dielectric Passivation

100% Purge Burn-In

High Responsivity

Device Characteristics:

Parameters

Operating Voltage

Dark Current

Capacitance

Responsivity

Rise/Fall

Test Conditions

Min Typ Max

Units

-5V

1300nm

-20

Volts

0.2

0.90

0.95

1.5

0.5

A/W

GHz

Frequency Response

(-3dB)

Absolute Maximum Ratings

Reverse Voltage

30 Volts

Forward Current

Reverse Current

5 mA

Operating Temperature

Storage Temperature

Soldering Temperature

-40^oC to + 85^oC

250^oC

829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502