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150GT120DN2 [ETC]

IGBT Module ; IGBT模块\n
150GT120DN2
型号： 150GT120DN2
厂家： ETC    ETC
描述：

IGBT Module
IGBT模块\n

双极性晶体管
文件： 总9页 (文件大小：303K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BSM 150 GT 120 DN2  
IGBT Power Module  
• Solderable Power module  
• 3-phase full-bridge  
• Including fast free-wheel diodes  
• Package with insulated metal base plate  
Type  
V
I
Package  
Ordering Code  
CE  
C
BSM 150 GT 120 DN2  
1200V 200A TRIPACK  
C67070-A2518-A67  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
1200  
V
CE  
V
CGR  
R
= 20 kΩ  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
A
C
T = 25 °C  
200  
150  
C
T = 80 °C  
C
Pulsed collector current, t = 1 ms  
I
p
Cpuls  
T = 25 °C  
400  
300  
C
T = 80 °C  
C
Power dissipation per IGBT  
P
W
tot  
T = 25 °C  
1250  
C
Chip temperature  
T
T
+ 150  
°C  
j
Storage temperature  
-40 ... + 125  
stg  
≤
≤
Thermal resistance, chip case  
Diode thermal resistance, chip case  
Insulation test voltage, t = 1min.  
Creepage distance  
R
R
0.12  
0.28  
K/W  
thJC  
thJC  
is  
D
V
-
2500  
Vac  
mm  
16  
Clearance  
-
11  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
F
sec  
-
40 / 125 / 56  
1
Nov-24-1997  
BSM 150 GT 120 DN2  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Static Characteristics  
Gate threshold voltage  
V
V
V
GE(th)  
V
= V  
I = 6 mA  
4.5  
5.5  
6.5  
GE  
CE, C  
Collector-emitter saturation voltage  
CE(sat)  
V
V
= 15 V, I = 150 A, T = 25 °C  
-
-
2.5  
3.1  
3
GE  
GE  
C
j
= 15 V, I = 150 A, T = 125 °C  
3.7  
C
j
Zero gate voltage collector current  
I
mA  
nA  
CES  
V
V
= 1200 V, V = 0 V, T = 25 °C  
-
-
2
8
2.8  
-
CE  
CE  
GE  
j
= 1200 V, V = 0 V, T = 125 °C  
GE  
j
Gate-emitter leakage current  
= 20 V, V = 0 V  
I
GES  
V
-
-
320  
GE  
CE  
AC Characteristics  
Transconductance  
g
S
fs  
V
= 20 V, I = 150 A  
62  
-
-
-
-
-
CE  
C
Input capacitance  
= 25 V, V = 0 V, f = 1 MHz  
C
nF  
iss  
V
-
-
-
10  
1.5  
0.8  
CE  
GE  
Output capacitance  
= 25 V, V = 0 V, f = 1 MHz  
C
C
oss  
rss  
V
CE  
GE  
Reverse transfer capacitance  
= 25 V, V = 0 V, f = 1 MHz  
V
CE  
GE  
2
Nov-24-1997  
BSM 150 GT 120 DN2  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Switching Characteristics, Inductive Load at T = 125 °C  
j
Turn-on delay time  
= 600 V, V = 15 V, I = 150 A  
t
ns  
d(on)  
V
CC  
GE  
C
Ω
R
= 5.6  
-
-
-
-
200  
100  
600  
70  
400  
200  
900  
100  
Gon  
Rise time  
= 600 V, V = 15 V, I = 150 A  
t
r
V
CC  
GE  
C
Ω
= 5.6  
R
Gon  
Turn-off delay time  
= 600 V, V = -15 V, I = 150 A  
t
d(off)  
V
CC  
GE  
C
Ω
= 5.6  
R
Goff  
Fall time  
= 600 V, V = -15 V, I = 150 A  
t
f
V
CC  
GE  
C
R
= 5.6 Ω  
Goff  
Free-Wheel Diode  
Diode forward voltage  
V
V
F
I = 150 A, V = 0 V, T = 25 °C  
-
-
2.3  
1.8  
2.8  
-
F
GE  
j
I = 150 A, V = 0 V, T = 125 °C  
F
GE  
j
Reverse recovery time  
I = 150 A, V = -600 V, V = 0 V  
t
µs  
µC  
rr  
F
R
GE  
di /dt = -1500 A/µs, T = 125 °C  
-
0.4  
-
F
j
Reverse recovery charge  
I = 150 A, V = -600 V, V = 0 V  
Q
rr  
F
R
GE  
di /dt = -1500 A/µs  
F
T = 25 °C  
-
-
8
-
-
j
T = 125 °C  
22  
j
3
Nov-24-1997  
BSM 150 GT 120 DN2  
Power dissipation  
Safe operating area  
ƒ
ƒ
P
= (T )  
I = (V  
)
CE  
tot  
C
C
≤
≤
parameter: D = 0, T = 25°C , T 150 °C  
C j  
parameter: T 150 °C  
j
10 3  
1300  
W
t
= 18.0µs  
p
A
1100  
Ptot  
IC  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
10 2  
10 1  
10 0  
100 µs  
1 ms  
10 ms  
100  
0
3
10 0  
10 1  
10 2  
V
DC  
10  
0
20  
40  
60  
80  
100 120 °C  
160  
TC  
VCE  
Collector current  
Transient thermal impedance IGBT  
ƒ
ƒ
I = (T )  
Z
= (t )  
C
C
th JC  
p
≥
≤
parameter: V  
15 V , T 150 °C  
parameter: D = t / T  
GE  
j
p
10 0  
220  
A
K/W  
180  
IC  
ZthJC  
10 -1  
160  
140  
120  
100  
80  
10 -2  
D = 0.50  
0.20  
0.10  
0.05  
10 -3  
60  
0.02  
40  
0.01  
single pulse  
20  
0
10 -4  
10 -5  
0
20  
40  
60  
80  
100 120 °C  
160  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
TC  
tp  
4
Nov-24-1997  
BSM 150 GT 120 DN2  
Typ. output characteristics  
Typ. output characteristics  
I = f (V  
I = f (V  
)
)
CE  
C
CE  
C
parameter: t = 80 µs, T = 25 °C  
parameter: t = 80 µs, T = 125 °C  
p j  
p
j
300  
A
300  
A
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
17V  
15V  
13V  
11V  
9V  
17V  
15V  
13V  
11V  
9V  
IC  
IC  
7V  
7V  
60  
60  
40  
40  
20  
0
20  
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE  
VCE  
Typ. transfer characteristics  
I = f (V  
)
GE  
C
parameter: t = 80 µs, V = 20 V  
p
CE  
300  
A
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
IC  
60  
40  
20  
0
0
2
4
6
8
10  
V
14  
VGE  
5
Nov-24-1997  
BSM 150 GT 120 DN2  
Typ. capacitances  
Typ. gate charge  
ƒ
C = f (V )  
V
= (Q  
)
CE  
GE  
Gate  
parameter: I  
= 150 A  
parameter: V = 0 V, f = 1 MHz  
C puls  
GE  
10 2  
20  
V
nF  
16  
VGE  
C
600 V  
800 V  
14  
12  
10  
8
10 1  
Ciss  
Coss  
Crss  
10 0  
6
4
2
0
0
10 -1  
200  
400  
600  
800  
1100  
0
5
10  
15  
20  
25  
30  
V
40  
VCE  
QGate  
Reverse biased safe operating area  
= f(V T = 150°C  
Short circuit safe operating area  
I = f(V ) , T = 150°C  
Csc  
I
)
,
Cpuls  
CE  
j
CE  
j
parameter: VGE = 15 V  
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH  
2.5  
12  
ICpuls/IC  
ICsc/IC  
8
6
4
1.5  
1.0  
0.5  
0.0  
2
0
0
200 400 600 800 1000 1200  
V
1600  
0
200 400 600 800 1000 1200  
V
1600  
VCE  
VCE  
6
Nov-24-1997  
BSM 150 GT 120 DN2  
Typ. switching time  
Typ. switching time  
I = f (I ) , inductive load , T = 125°C  
t = f (R ) , inductive load , T = 125°C  
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 5.6  
par.: V = 600 V, V = ± 15 V, I = 150 A  
Ω
CE  
10 4  
GE  
G
CE  
10 4  
GE  
C
ns  
ns  
t
t
tdoff  
10 3  
10 3  
tdoff  
tdon  
tr  
tdon  
tr  
10 2  
10 2  
tf  
tf  
10 1  
10 1  
0
50  
100 150 200 250 300  
A
IC  
400  
0
10  
20  
30  
40  
60  
Ω
RG  
Typ. switching losses  
E = f (I ) , inductive load , T = 125°C  
Typ. switching losses  
E = f (R ) , inductive load , T = 125°C  
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 5.6 Ω  
par.: V = 600V, V = ± 15 V, I = 150 A  
CE  
GE  
G
CE  
GE  
C
120  
120  
mWs  
80  
mWs  
80  
Eon  
E
E
Eon  
60  
60  
40  
40  
Eoff  
Eoff  
20  
0
20  
0
0
50  
100 150 200 250 300  
A
IC  
400  
0
10  
20  
30  
40  
60  
Ω
RG  
7
Nov-24-1997  
BSM 150 GT 120 DN2  
Forward characteristics of fast recovery  
Transient thermal impedance Diode  
reverse diode  
ƒ
I = f(V )  
Z
= (t )  
F
F
th JC  
p
parameter: D = t / T  
parameter: T  
p
j
10 0  
300  
A
K/W  
260  
240  
ZthJC  
IF  
10 -1  
220  
200  
180  
160  
140  
120  
100  
80  
Tj=125°C  
Tj=25°C  
10 -2  
D = 0.50  
0.20  
0.10  
0.05  
10 -3  
0.02  
60  
single pulse  
0.01  
40  
20  
0
10 -4  
0.0  
0.5  
1.0  
1.5  
2.0  
V
3.0  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
VF  
tp  
8
Nov-24-1997  
BSM 150 GT 120 DN2  
Circuit Diagram  
Package Outlines  
Dimensions in mm  
Weight: 300 g  
9
Nov-24-1997  

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