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2MBI200J120 [ETC]

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) ; 晶体管| IGBT功率模块|半桥| 1.2KV V（ BR ） CES | 200A I（C ）\n

2MBI200J120


元器件型号：	2MBI200J120
生产厂家：	ETC
描述和应用：	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 200A I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV V（ BR ） CES \| 200A I（C ）\n 晶体晶体管双极性晶体管栅
PDF文件：	总4页 (文件大小：167K)
下载文档：	下载PDF数据表文档文件
型号参数：2MBI200J120参数

2MBI200L-060

IGBT MODULE(L series)

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87 FUJI

2MBI200L-060

IGBT mold type

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53 ETC

2MBI200L-060

IGBT mold type

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19 ETC

2MBI200L-120

IGBT MODULE ( L series)

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84 FUJI

2MBI200LB060

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)

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32 ETC

2MBI200LB-060

IGBT mold type

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19 ETC

2MBI200LB-060

IGBT MODULE

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33 FUJI

2MBI200LB-060

IGBT mold type

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12 ETC

2MBI200N-060

IGBT MODULE ( N series )

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317 FUJI

2MBI200N-060-03

600V / 200A 2 in one-package

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67 FUJI

2MBI200N-060-03A

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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0 FUJI

2MBI200N-060-03B

暂无描述

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0 FUJI

2MBI200N-060-03C

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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0 FUJI

2MBI200N-060-03C

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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0 FUJI

2MBI200N-060-03D

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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0 FUJI

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